-
公开(公告)号：US09748334B1
公开(公告)日：2017-08-29
申请号：US15046723
申请日：2016-02-18
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Sarunya Bangsaruntip , Michael Engel , Shu-Jen Han
CPC classification number: H01L29/0669 , H01L21/02623 , H01L23/291 , H01L23/3171 , H01L29/0649 , H01L29/1606 , H01L29/42376 , H01L29/66045 , H01L29/66477 , H01L29/66553 , H01L29/778 , H01L29/78 , H01L51/0048 , H01L51/0541 , H01L51/057
Abstract: A field effect transistor including a dielectric layer on a substrate, a nano-structure material (NSM) layer on the dielectric layer, a source electrode and a drain electrode formed on the NSM layer, a gate dielectric formed on at least a portion of the NSM layer between the source electrode and the drain electrode, a T-shaped gate electrode formed between the source electrode and the drain electrode, where the NSM layer forms a channel of the FET, and a doping layer on the NSM layer extending at least from the sidewall of the source electrode to a first sidewall of the gate dielectric, and from a sidewall of the drain electrode to a second sidewall of the gate dielectric.
-
公开(公告)号：US20170237008A1
公开(公告)日：2017-08-17
申请号：US15585616
申请日：2017-05-03
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Shu-Jen Han
CPC classification number: H01L51/0023 , H01L51/0026 , H01L51/0048 , H01L51/0516 , H01L51/0541 , H01L51/055 , H01L51/0566 , H01L51/105 , H01L2251/301
Abstract: A method of fabricating a semiconductor device includes depositing a dielectric layer on a substrate and a nanomaterial on the dielectric layer. The method also includes depositing a thin metal layer on the nanomaterial and removing a portion of the thin metal layer from a gate area. The method also includes depositing a gate dielectric layer. The method also includes selectively removing the gate dielectric layer from a source contact region and a drain contact region. The method also includes patterning a gate electrode, a source electrode, and a drain electrode.
-
公开(公告)号：US20170194582A1
公开(公告)日：2017-07-06
申请号：US14983646
申请日：2015-12-30
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Shu-Jen Han
CPC classification number: H01L51/0023 , H01L51/0026 , H01L51/0048 , H01L51/0516 , H01L51/0541 , H01L51/055 , H01L51/0566 , H01L51/105 , H01L2251/301
Abstract: A method of fabricating a semiconductor device includes depositing a dielectric layer on a substrate and a nanomaterial on the dielectric layer. The method also includes depositing a thin metal layer on the nanomaterial and removing a portion of the thin metal layer from a gate area. The method also includes depositing a gate dielectric layer. The method also includes selectively removing the gate dielectric layer from a source contact region and a drain contact region. The method also includes patterning a gate electrode, a source electrode, and a drain electrode.
-
公开(公告)号：US09698363B1
公开(公告)日：2017-07-04
申请号：US14983646
申请日：2015-12-30
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Shu-Jen Han
CPC classification number: H01L51/0023 , H01L51/0026 , H01L51/0048 , H01L51/0516 , H01L51/0541 , H01L51/055 , H01L51/0566 , H01L51/105 , H01L2251/301
Abstract: A method of fabricating a semiconductor device includes depositing a dielectric layer on a substrate and a nanomaterial on the dielectric layer. The method also includes depositing a thin metal layer on the nanomaterial and removing a portion of the thin metal layer from a gate area. The method also includes depositing a gate dielectric layer. The method also includes selectively removing the gate dielectric layer from a source contact region and a drain contact region. The method also includes patterning a gate electrode, a source electrode, and a drain electrode.
-
公开(公告)号：US09691987B1
公开(公告)日：2017-06-27
申请号：US15298620
申请日：2016-10-20
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Shu-Jen Han , Bharat Kumar , George S. Tulevski
IPC: H01L51/00 , C07C259/06 , C07F9/38
CPC classification number: H01L51/0048 , C01B31/0226 , C01B31/0253 , C01B32/16 , C01B32/174 , C07F9/3808 , H01L21/02606 , H01L51/0003
Abstract: Structures and methods that include selective electrostatic placement based on a dipole-to-dipole interaction of electron-rich carbon nanotubes onto an electron-deficient pre-patterned surface. The structure includes a substrate with a first surface having a first isoelectric point and at least one additional surface having a second isoelectric point. A self-assembled monolayer is selectively formed on the first surface and includes an electron deficient compound including a deprotonated pendant hydroxamic acid or a pendant phosphonic acid group or a pendant catechol group bound to the first surface. An organic solvent can be used to deposit the electron rich carbon nanotubes on the self-assembled monolayer.
-
Patent Agency Ranking
公开(公告)号：US09647169B2
公开(公告)日：2017-05-09
申请号：US14538497
申请日：2014-11-11
Applicant: International Business Machines Corporation
Inventor： Dechao Guo , Shu-Jen Han , Keith Kwong Hon Wong , Jun Yuan
CPC classification number: H01L33/0041 , H01L33/26 , H01L33/34 , H01L33/40 , H01L51/0048 , H01L51/5203 , H01L51/5296
Abstract: Carbon-based light emitting diodes (LEDs) and techniques for the fabrication thereof are provided. In one aspect, a LED is provided. The LED includes a substrate; an insulator layer on the substrate; a first bottom gate and a second bottom gate embedded in the insulator layer; a gate dielectric on the first bottom gate and the second bottom gate; a carbon material on the gate dielectric over the first bottom gate and the second bottom gate, wherein the carbon material serves as a channel region of the LED; and metal source and drain contacts to the carbon material.
-
公开(公告)号：US20170063543A1
公开(公告)日：2017-03-02
申请号：US14749092
申请日：2015-06-24
Applicant: International Business Machines Corporation
Inventor： Wilfried Haensch , Shu-Jen Han , Keith A. Jenkins , Dirk Pfeiffer
IPC: H04L9/08
CPC classification number: H04L9/0861 , G09C1/00 , H04L9/0866 , H04L2209/12
Abstract: Techniques for use of carbon nanotubes as an anti-tampering feature and for use of randomly metallic or semiconducting carbon nanotubes in the generation of a physically unclonable cryptographic key generation are provided. In one aspect, a cryptographic key having an anti-tampering feature is provided which includes: an array of memory bits oriented along at least one bit line and at least one word line, wherein each of the memory bits comprises a memory cell, wherein the cryptographic key is stored in the memory cell, and wherein the memory cell is connected to the at least one bit line; and a metallic carbon nanotube interconnect which connects the memory cell to the at least one word line. A cryptographic key and method for processing the cryptographic key are also provided.
Abstract translation: 提供了使用碳纳米管作为防篡改特征的技术，并且在生成物理上不可克隆的密码密钥生成时使用随机金属或半导体碳纳米管。 一方面，提供了具有防篡改特征的密码密钥，其包括：沿至少一个位线和至少一个字线定向的存储器位阵列，其中每个存储器位包括存储器单元，其中， 加密密钥存储在存储器单元中，并且其中存储单元连接到至少一个位线; 以及将存储单元连接到至少一个字线的金属碳纳米管互连。 还提供了用于处理加密密钥的加密密钥和方法。
-
168.发明授权Carbon nanotube field-effect transistor with sidewall-protected metal contacts 有权具有侧壁保护金属触点的碳纳米管场效应晶体管公开(公告)号：US09577204B1
公开(公告)日：2017-02-21
申请号：US14929099
申请日：2015-10-30
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Shu-Jen Han , Jianshi Tang
CPC classification number: H01L51/105 , H01L51/002 , H01L51/0021 , H01L51/0023 , H01L51/0048 , H01L51/0545 , H01L51/0558 , H01L51/107 , H01L2251/301
Abstract: A field effect transistor includes a substrate and a gate dielectric formed on the substrate. A channel material is formed on the dielectric layer. The channel material includes carbon nanotubes. A patterned resist layer has openings formed therein. Metal contacts are formed on the channel material in the openings in the patterned resist layer and over portions of the patterned resist layer to protect sidewalls of the metal contacts to prevent degradation of the metal contacts.
Abstract translation: 场效应晶体管包括形成在衬底上的衬底和栅极电介质。 在电介质层上形成沟道材料。 通道材料包括碳纳米管。 图案化的抗蚀剂层具有形成在其中的开口。 金属触点形成在图案化抗蚀剂层的开口中的沟道材料上以及图案化抗蚀剂层的部分上，以保护金属触点的侧壁以防止金属触点的劣化。
-
公开(公告)号：US20160373256A1
公开(公告)日：2016-12-22
申请号：US14953695
申请日：2015-11-30
Applicant: International Business Machines Corporation
Inventor： Shu-Jen Han
CPC classification number: H04L9/321 , G06F21/44 , G06F21/602 , G06K7/10297 , G06K19/0723 , G09C1/00 , H01L21/8258 , H01L23/576 , H01L27/0688 , H01L27/283 , H01L51/0048 , H01L51/0558 , H04L9/0866 , H04L9/32 , H04L2209/805 , H04W12/02 , H04W12/04 , H04W12/06 , H04W12/10
Abstract: Embodiments relate to the authentication of a semiconductor. An identification circuit disposed within a package of an integrated circuit, and the identification circuit includes carbon-nanotube transistors configured to generate an encryption key.
-
公开(公告)号：US20160373255A1
公开(公告)日：2016-12-22
申请号：US14744241
申请日：2015-06-19
Applicant: International Business Machines Corporation
Inventor： Shu-Jen Han
CPC classification number: H04L9/321 , G06F21/44 , G06F21/602 , G06K7/10297 , G06K19/0723 , G09C1/00 , H01L21/8258 , H01L23/576 , H01L27/0688 , H01L27/283 , H01L51/0048 , H01L51/0558 , H04L9/0866 , H04L9/32 , H04L2209/805 , H04W12/02 , H04W12/04 , H04W12/06 , H04W12/10
Abstract: Embodiments relate to the authentication of a semiconductor. An identification circuit disposed within a package of an integrated circuit, and the identification circuit includes carbon-nanotube transistors configured to generate an encryption key.
Abstract translation: 实施例涉及半导体的认证。 一种设置在集成电路的封装内的识别电路，所述识别电路包括被配置为产生加密密钥的碳纳米管晶体管。
-
-
-
-
-
-
-
-
-
Search Results
239
records
(took 0.05 seconds)
