公开(公告)号：US10439074B2

公开(公告)日：2019-10-08

申请号：US16034456

申请日：2018-07-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masashi Tsubuku ,  Satoru Saito ,  Noritaka Ishihara

IPC: H01L21/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L27/06 ,  H01L21/8258 ,  H01L27/088

Abstract: A semiconductor device with improved electrical characteristics is provided. A semiconductor device with improved field effect mobility is provided. A semiconductor device in which the field-effect mobility is not lowered even at high temperatures is provided. A semiconductor device which can be formed at low temperatures is provided. A semiconductor device with improved productivity can be provided. In the semiconductor device, there is a range of a gate voltage where the field-effect mobility increases as the temperature increases within a range of the gate voltage from 0 V to 10 V. For example, such a range of a gate voltage exists at temperatures ranging from a room temperature (25° C.) to 120° C. In the semiconductor device, the off-state current is kept extremely low (lower than or equal to the detection limit of a measurement device) within the above temperature range.

公开(公告)号：US10439068B2

公开(公告)日：2019-10-08

申请号：US15010045

申请日：2016-01-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yasumasa Yamane ,  Yuhei Sato ,  Shunpei Yamazaki

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04

Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

公开(公告)号：US10403760B2

公开(公告)日：2019-09-03

申请号：US15058330

申请日：2016-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Junichi Koezuka ,  Toshimitsu Obonai ,  Satoru Saito ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L29/34 ,  H01L29/66 ,  H01L29/49 ,  H01L27/12

Abstract: A novel oxide semiconductor film. An oxide semiconductor film with a small amount of defects. An oxide semiconductor film in which a peak value of the density of shallow defect states at an interface between the oxide semiconductor film and an insulating film is small. The oxide semiconductor film includes In, M (M is Al, Ga, Y, or Sn), Zn, and a region in which a peak value of a density of shallow defect states is less than 1E13 per square cm per volt.

公开(公告)号：US10228807B2

公开(公告)日：2019-03-12

申请号：US15698901

申请日：2017-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro Jinbo ,  Kenichi Okazaki

IPC: G06F3/044 ,  H01L27/32 ,  H01L51/52 ,  H01L31/0203 ,  H01L31/02 ,  H01L31/042 ,  G06F3/01 ,  H01L51/00

Abstract: A functional panel is provided. The functional panel includes a first substrate, a second substrate, a bonding layer, a functional element, a protective layer, and a terminal. The bonding layer is positioned between the first and second substrates. The functional element is surrounded by the first substrate, the second substrate, and the bonding layer. The terminal is electrically connected to the functional element and provided not to overlap with one of the first and second substrates. The protective layer is provided to be in contact with side surfaces of the first and second substrates and an exposed surface of the bonding layer. A surface of the terminal is partly exposed without being covered with the protective layer. The surface of the terminal partly includes a material having a lower ionization tendency than hydrogen.

公开(公告)号：US10168809B2

公开(公告)日：2019-01-01

申请号：US15066026

申请日：2016-03-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiharu Hirakata ,  Daisuke Kubota ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1333 ,  G06F3/041 ,  G06F3/044

Abstract: To provide a thin touch panel, a touch panel with high visibility, a lightweight touch panel, or a touch panel with low power consumption. A pair of conductive layers included in a capacitive touch sensor have a mesh shape including a plurality of openings. Furthermore, the pair of conductive layers included in the touch sensor are provided between a pair of substrates included in the touch panel, and a light-transmitting conductive layer capable of supplying a constant potential is provided between a circuit which drives a display element and the pair of conductive layers.

公开(公告)号：US10115742B2

公开(公告)日：2018-10-30

申请号：US15427695

申请日：2017-02-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masashi Tsubuku ,  Haruyuki Baba ,  Sachie Shigenobu ,  Emi Koezuka

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786

Abstract: In a transistor including an oxide semiconductor, a variation in electrical characteristics is suppressed and reliability is improved. A semiconductor device includes a transistor. The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, a second gate electrode over the second insulating film, and a third insulating film over the oxide semiconductor film and the second gate electrode. The oxide semiconductor film includes a channel region overlapping with the second gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The first gate electrode and the second gate electrode are electrically connected to each other. A difference between a minimum value and a maximum value of the field-effect mobility in the case where the field-effect mobility in a saturation region of the transistor is measured.

公开(公告)号：US10103274B2

公开(公告)日：2018-10-16

申请号：US15462229

申请日：2017-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Katayama ,  Chieko Misawa ,  Yuka Yokoyama ,  Hironobu Takahashi ,  Kenichi Okazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66 ,  G02F1/1368 ,  H01L27/12

Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.

公开(公告)号：US10096721B2

公开(公告)日：2018-10-09

申请号：US15609405

申请日：2017-05-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masataka Nakada ,  Masahiro Katayama

IPC: H01L29/786 ,  H01L27/12

Abstract: To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.

公开(公告)号：US10096719B2

公开(公告)日：2018-10-09

申请号：US15401460

申请日：2017-01-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L21/385 ,  H01L23/31 ,  H01L29/04 ,  H01L29/45

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

公开(公告)号：US10096684B2

公开(公告)日：2018-10-09

申请号：US15391186

申请日：2016-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  C04B35/453 ,  C04B35/622 ,  H01L29/786 ,  C03C17/245 ,  C04B35/01 ,  C23C14/08 ,  C23C14/58

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.