公开(公告)号：US12082230B2

公开(公告)日：2024-09-03

申请号：US18465002

申请日：2023-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungnam Hong ,  Yeohun Yun ,  Taeyoung Kim ,  Jiyun Seol ,  Jongbu Lim

IPC: H04W72/541 ,  H04L1/1812 ,  H04L1/1867 ,  H04L5/00 ,  H04W16/14 ,  H04W88/08

CPC classification number: H04W72/541 ,  H04L1/1812 ,  H04L1/1896 ,  H04L5/0062 ,  H04L5/0091 ,  H04W16/14 ,  H04W88/08

Abstract: The present disclosure relates to a method and device for providing different services in a mobile communication system. In an embodiment, a base station sets interference influence information including information about interference of a second signal of a second system using a second TTI with regard to a first signal of a first system using a first transmission time interval (TTI). Also, the base station transmits the first signal of the first system to a terminal, and transmits the interference influence information to the terminal in a predetermined time. In a situation where different services coexist, an HARQ retransmission technique is provided for effectively overcoming a transmission failure caused by influence of interference between services.

公开(公告)号：US20240222694A1

公开(公告)日：2024-07-04

申请号：US18395936

申请日：2023-12-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heungchan Lee ,  Taeyoung Kim ,  Jonghoon Ka ,  Jeongkuk Shon ,  Sungjin Lim

IPC: H01M10/0562 ,  H01M4/75 ,  H01M10/6551 ,  H01M10/6555 ,  H01M50/434

CPC classification number: H01M10/0562 ,  H01M4/75 ,  H01M10/6551 ,  H01M10/6555 ,  H01M50/434

Abstract: A multilayer ceramic battery including a cell stack including a plurality of unit cells, a first external current collector layer disposed on a first side surface of the cell stack, a second external current collector layer disposed on a second side surface of the cell stack, a case surrounding the cell stack, the first external current collector layer, and second external current collector, and a heat dissipation layer configured to dissipate heat generated from the cell stack to the outside, wherein the heat dissipation layer is disposed in a region surrounded by the case.

公开(公告)号：US20240222631A1

公开(公告)日：2024-07-04

申请号：US18400003

申请日：2023-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungjin Lim ,  Hwiyeol Park ,  Jonghoon Ka ,  Taeyoung Kim ,  Heungchan Lee

IPC: H01M4/62 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/36 ,  H01M4/525 ,  H01M10/052 ,  H01M10/0562

CPC classification number: H01M4/62 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/366 ,  H01M4/525 ,  H01M10/052 ,  H01M10/0562 ,  H01M2004/028

Abstract: A cathode including a cathode active material layer including a composite cathode active material particle including a core, and a coating layer disposed on at least a portion of the core, wherein the core includes a lithium transition metal oxide, and the coating layer includes a first solid electrolyte, wherein the first solid electrolyte is a halogen-containing oxide solid electrolyte, and a matrix comprising a second solid electrolyte, wherein the second solid electrolyte is a halogen-free oxide solid electrolyte, and wherein the composite cathode active material particle is disposed in the second solid electrolyte, and wherein the first solid electrolyte and the second solid electrolyte each comprise silicon and boron.

公开(公告)号：US11909028B2

公开(公告)日：2024-02-20

申请号：US16852677

申请日：2020-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunpyo Lee ,  Mokwon Kim ,  Taeyoung Kim ,  Wonsung Choi

IPC: H01M4/131 ,  H01M4/04 ,  H01M4/134 ,  H01M4/505 ,  H01M4/525 ,  H01M4/58 ,  H01M4/62 ,  H01M4/66 ,  H01M10/0525 ,  H01M10/0569 ,  H01M4/02

CPC classification number: H01M4/131 ,  H01M4/0442 ,  H01M4/0471 ,  H01M4/134 ,  H01M4/505 ,  H01M4/525 ,  H01M4/58 ,  H01M4/621 ,  H01M4/663 ,  H01M4/667 ,  H01M10/0525 ,  H01M10/0569 ,  H01M2004/021

Abstract: A cathode for a metal-air battery, the cathode including a mixed conductor; and first pores having a size of about 1 micrometer (μm) or greater, wherein an amount of the first pores is about 30 volume percent (volume %) or greater, with respect to a total volume of pores in the cathode, and a total porosity of the cathode is about 50% or greater, based on a total volume of the cathode.

公开(公告)号：US11894242B2

公开(公告)日：2024-02-06

申请号：US18174576

申请日：2023-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taeyoung Kim ,  Seokhong Kwon ,  Wonyoung Kim ,  Jinchan Ahn

IPC: H01L23/48 ,  H01L21/56 ,  H01L23/24 ,  H01L23/00

CPC classification number: H01L21/565 ,  H01L23/24 ,  H01L21/561 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/16227 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265

Abstract: A semiconductor package includes a package substrate, at least one semiconductor chip mounted on the package substrate, a molding member on the package substrate to cover at least a portion of the semiconductor chip, and a mechanical reinforcing member provided around the semiconductor chip within the molding member and extending in at least one direction.

公开(公告)号：US11882547B2

公开(公告)日：2024-01-23

申请号：US18108942

申请日：2023-02-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongok Kim ,  Saidhiraj Amuru ,  Chanhong Kim ,  Yeohun Yun ,  Jongbu Lim ,  Sungnam Hong ,  Taeyoung Kim

IPC: H04W72/04 ,  H04W76/27 ,  H04L1/00 ,  H04W56/00

CPC classification number: H04W72/04 ,  H04L1/0002 ,  H04W56/001 ,  H04W76/27

Abstract: The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services.

公开(公告)号：US20240006605A1

公开(公告)日：2024-01-04

申请号：US18252649

申请日：2021-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangbok Ma ,  Joonhee Kim ,  Sungjin Lim ,  Valentina LACIVITA ,  Yongwoo Shin ,  Taeyoung Kim

IPC: H01M4/525 ,  H01M10/0525 ,  H01M4/1315 ,  C01B25/168

CPC classification number: H01M4/525 ,  H01M10/0525 ,  H01M4/1315 ,  C01B25/168 ,  H01M2004/028

Abstract: A cathode active material represented by Formula 1 below:


A2+xMP2O7Zy  Formula 1

wherein in Formula 1, A is at least one element selected from Group 1 of the Periodic Table, M is at least one metal element selected from Groups 2 to 4, or 6 to 16 of the Periodic Table, and is a cation having a valence of at least two, Z is at least one element selected from Group 17 of the Periodic Table, 0

公开(公告)号：US20230399239A1

公开(公告)日：2023-12-14

申请号：US18250026

申请日：2021-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungjin Lim ,  Sangbok Ma ,  Jonghoon Ka ,  Taeyoung Kim ,  Youngjoon Bae

IPC: C01G53/00 ,  H01M10/0525

CPC classification number: C01G53/006 ,  H01M10/0525 ,  C01P2006/40 ,  C01P2002/72 ,  C01P2002/74

Abstract: An electrode active material including a compound represented by Formula 1:


Lix(Ni1-yMy)z(P2O7)4  



wherein in Formula 1, 5≤x≤7, 0.2≤y

公开(公告)号：US11743883B2

公开(公告)日：2023-08-29

申请号：US17475623

申请日：2021-09-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeohun Yun ,  Kyeongyeon Kim ,  Chanhong Kim ,  Jongbu Lim ,  Sungnam Hong ,  Taeyoung Kim

IPC: H04W72/12 ,  H04W72/0453 ,  H04W72/0446 ,  H04W72/23

CPC classification number: H04W72/1215 ,  H04W72/0446 ,  H04W72/0453 ,  H04W72/23

Abstract: A communication method and system for converging a fifth generation (5G) communication system for supporting higher data rates beyond a fourth generation (4G) system with a technology for Internet of things (IoT) are provided. The communication method and system may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services.

公开(公告)号：US20230269941A1

公开(公告)日：2023-08-24

申请号：US18095576

申请日：2023-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bongyong Lee ,  Yukio Hayakawa ,  Taeyoung Kim ,  Hyunmog Park ,  Siyeon Cho

IPC: H10B43/27 ,  H10B43/35 ,  H10B43/10 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  G11C16/14

CPC classification number: H10B43/27 ,  H10B43/35 ,  H10B43/10 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  G11C16/14

Abstract: A semiconductor device includes a source structure, gate electrodes spaced apart from each other and stacked in a first direction, perpendicular to an upper surface of the source structure, and a channel structure extending through the gate electrodes in the first direction, and including a dielectric layer, a charge storage layer, a tunneling layer, a channel layer, and a buried semiconductor layer. The dielectric layer is between the gate electrodes and the charge storage layer. The tunneling layer is between charge storage layer and the channel layer. The channel layer is between the tunneling layer and the buried semiconductor layer. An outer surface of a lower portion of the channel layer is in contact with the source structure, and the dielectric layer includes a ferroelectric material, the channel layer includes an oxide semiconductor material, and the buried semiconductor layer includes silicon (Si).