摘要:
In an oscillator of the present invention, each of field-effect transistors (12) and (13) contained as amplifier elements is a buried-channel transistor including: a body region formed on a semiconductor substrate, a source region and a drain region formed on the body region and having a different conductivity type from that of the body region, a buried channel layer formed between the source region and the drain region, and a gate electrode formed above the buried channel layer with a gate insulating film interposed therebetween, wherein body terminals (b12) and (b13) electrically connected to the body region are connected to a power supply wire to which a power supply potential (Vdd) is applied.
摘要:
A production method for a semiconductor device according to the present invention includes: step (A) of providing a substrate including a semiconductor layer having a principal face, the substrate having a device isolation structure (STI) formed in an isolation region 70 for partitioning the principal face into a plurality of device active regions 50, 60; step (B) of growing an epitaxial layer containing Si and Ge on selected device active regions 50 among the plurality of device active regions 50, 60 of the principal face of the semiconductor layer; and step (C) of forming a transistor in, among the plurality of device active regions 50, 60, each of the device active regions 50 on which the epitaxial layer is formed and each of the device active regions A2 on which the epitaxial layer is not formed. Step (A) includes step (a1) of forming, in the isolation region 70, a plurality of dummy regions 80 surrounded by the device isolation structure (STI), and step (B) includes step (b1) of growing a layer of the same material as that of the epitaxial layer on selected regions among the plurality of dummy regions 80.
摘要:
The present invention relates to a method for measuring the concentration of a particular component in a blood sample containing blood cells based on a variable correlated with the concentration of the particular component. In the present invention, a concentration (S) in blood plasma obtained by removing blood cell components from the blood sample, a concentration (DI) in the blood sample computed by a differential method and a concentration (EP) in the blood sample computed by an equilibrium point method are expressed by a relational expression which is unrelated to the proportion of the blood cell components in the blood sample, and the concentration of the particular component is computed by using the relational expression.
摘要:
A MISFET according to this invention includes: a substrate having a semiconductor layer; an active region formed in the semiconductor layer; a gate insulator formed on the active region; a gate formed on the gate insulator; and a source region and a drain region, wherein: the active region is formed, in plan view, to have a body portion and a projecting portion projecting from a periphery of the body portion; the gate is formed, in plan view, to intersect the body portion of the active region, cover a pair of connecting portions connecting a periphery of the projecting portion to the periphery of the body portion and allow a part of the projecting portion to project from a periphery of the gate; and the source region and the drain region are formed in regions of the body portion of the active region which are situated on opposite sides of the gate in plan view, respectively.
摘要:
A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film.
摘要:
A semiconductor integrated circuit including a plurality of bipolar transistors that are produced by forming, in a plurality of transistor-producing regions, a first conductive type emitter layer on the front surface side of a second conductive type base layer that is formed on the surface side of a first conductive collector layer and contains germanium, the first conductive type emitter layer being formed from a semiconductor material having a band gap larger than the base layer. The concentrations of impurities contained in the emitter layers vary among the plurality of transistor-producing regions, and the germanium concentrations differ in the base-emitter junction interfaces of at least two of the transistor-producing regions, such that the ON-state voltages required for turning the plurality of bipolar transistors into an ON state differ from each other. This semiconductor integrated circuit makes it possible to reduce power consumption while maintaining the excellent performance of a bipolar transistor.
摘要:
The present invention provides a semiconductor device comprising: a semiconductor layer (3); a gate electrode (11) formed on the semiconductor layer (3) via a gate insulation film (10); and a first insulation film (13) formed at one or more of sidewalls of the semiconductor layer (3), the gate insulation film (10) and the gate electrode (11); wherein the first insulation film (13) overlies a part of the gate insulation film (10) surface. According to the semiconductor device, leakage current at the isolation edge can be suppressed and thus reliability can be improved.
摘要:
A SiGe spacer layer 151, a graded SiGe base layer 152 including boron, and an Si-cap layer 153 are sequentially grown through epitaxial growth over a collector layer 102 on an Si substrate. A second deposited oxide film 112 having a base opening portion 118 and a P+ polysilicon layer 115 that will be made into an emitter connecting electrode filling the base opening portion are formed on the Si-cap layer 153, and an emitter diffusion layer 153a is formed by diffusing phosphorus into the Si-cap layer 153. When the Si-cap layer 153 is grown, by allowing the Si-cap layer 153 to include boron only at the upper part thereof by in-situ doping, the width of a depletion layer 154 is narrowed and a recombination current is reduced, thereby making it possible to improve the linearity of the current characteristics.
摘要:
An object is to accurately measure the Stokes parameters, without the occurrence of polarization fluctuations or PDL during the splitting of the incident light. When the incident light is made incident on a first-stage prism, the light is split into two first splitting light rays. Next, the first split light rays are respectively incident on a pair of prisms of a second stage. Each of the pair of first split light rays is split into two rays by a second-stage prism, to obtain four second split light rays.
摘要:
The invention provides an image forming apparatus including an image forming portion for forming an image, an image reading portion for reading an image, displaceable with respect to the image forming portion, and an open/closable member that can be opened or closed with respect to a main body of the image forming portion and displaced toward the image reading portion, wherein the displacement of the open/closable member is effected in relation to the displacement of the image reading portion. In this manner the open/closable member can be opened or closed by a simple operation, without increasing the dimension of the image forming apparatus.