Abstract:
A layered solid element includes a ferroelectric layer of a crystalline material Li1−x(Nb1−yTay)1+xO3+2x−z which has X- or 33° Y-orientation with respect to a substrate of the layered solid element. The ferroelectric layer is grown epitaxially from a buffer layer having of one of the chemical formulae LkNirO1.5·(k+r)+w or Ln+1NinO3n+1+δ, where L is a lanthanide element. Such layered solid element may form a thin-film bulk acoustic resonator and be useful for integrated electronic circuits such as RF-filters, or guided optical devices such as integrated optical modulators.
Abstract:
The present invention provides a thin-film-transistor (TFT) array panel and manufacturing method of the same. The TFT array panel comprises a flexible baseplate, a buffer layer, and a display-element layer. The buffer layer is disposed on the flexible baseplate, a stress-elimination portion is disposed on the buffer layer, the stress-elimination portion is used to eliminate a stress of the flexible baseplate; the display-element layer is disposed on the buffer layer. The present invention is able to decrease the stress of the flexible baseplate, to prevent too large of a stress of the flexible baseplate.
Abstract:
The input devices described herein include force sensor electrodes that use capacitive sensing to measure the force with which an input object (e.g., a finger or stylus) presses down on the input device. To measure this force, the input device includes a compressible layer disposed between a backlight of a display in the input device and a cover window of the display. In one embodiment, the compressible layer is disposed between the backlight and a transparent thin-film transistor (TFT) layer in the display. In one embodiment, the compressible layer includes an air gap which has a thickness defined by adhesive material disposed on at least two edges of the display.
Abstract:
The present application discloses a mother substrate comprising a first region comprising a plurality of display substrate units; and a second region; the first region comprises a buffer layer on and in contact with a base substrate, the second region comprises a mat layer on and in contact with the base substrate for reducing segment difference between the first region and the second region.
Abstract:
There is provided a display device including a display cell (20); a surrounding member (30) provided around the display cell (20), a cover film (10) provided on front side of the display cell (20) and the surrounding member (30); a relay member (40) provided on rear side of the display cell (20) and the surrounding member (30), and facing a margin between the display cell (20) and the surrounding member (30); and an adhesive layer (50) provided between the display cell (20) and the relay member (40), and between he surrounding member (30) and the relay member (40).
Abstract:
The present invention provides a display substrate and a manufacturing method thereof, and a flexible display device having the display substrate, which belong to the field of display technology, and can solve the problem of poor reliability of display substrates due to the damage to thin film transistors when the existing display substrates are bent. In the display substrate provided by the present invention, by introducing stress absorption units made of resin material into the display substrate, the stress generated by the display substrate bent is released by the resin material, and thin film transistors on the display substrate are thus less likely to be damaged, so that the reliability of the whole display substrate is improved.
Abstract:
A method of manufacturing a liquid crystal display includes: forming a sacrificial layer by stacking a non-photosensitive resin; initiating formation of an etch stop layer on the sacrificial layer; forming a photoresist pattern; completing the etch stop layer using the photoresist pattern; ashing the photoresist pattern and the sacrificial layer by using the completed etch stop layer as a mask; forming a microcavity by removing the sacrificial layer; and forming a liquid crystal layer in the microcavity. The horizontal area occupied by the sacrificial layer is reduced by forming the common electrode or the etch stop layer at an upper side, thereby increasing the aperture ratio. Further, the vertical electric field is generated without distortion by horizontally forming the common electrode on the sacrificial layer and forming no common electrode on the sidewall thereof.
Abstract:
A display substrate includes a base substrate; a first metal pattern disposed on the base substrate and comprising a first signal line and a first electrode electrically connected to the first signal line; and a buffer pattern disposed at a corner between a sidewall surface of the first metal pattern and the base substrate.
Abstract:
In an electrophoretic display device comprising a plurality of pixels, each pixel having a cell area containing a plurality of charged pigment particles dispersed between two opposite electrodes, a semiconducting passivation layer is provided on one or both of the two opposite electrodes. The semiconducting passivation layer can be made of MOx/y, MSx/y, or MNx/y where M is a metal or semiconductor such as Al, Sn, Zn, Si, Ge, Ni, Ti or Cd; x is a positive integer; and y is independently a non-zero positive integer. The semiconducting passivation layer may have a doped Si, ZnOx/y, ZnSx/y, CdSx/y and TiOx/y or a III-V type semiconducting material. The semiconducting passivation layer can be doped with a dopant which can be an n-type doner or a p-type acceptor, the n-type doner is N, P, As or F; and the p-type acceptor is B, Al, Ga, In, Be, Mg or Ca.
Abstract translation:在包括多个像素的电泳显示装置中,每个像素具有包含分散在两个相对电极之间的多个带电颜料颗粒的单元区域,在两个相对电极中的一个或两个上设置半导体钝化层。 半导体钝化层可由MOx / y,MSx / y或MNx / y制成,其中M为金属或半导体,如Al,Sn,Zn,Si,Ge,Ni,Ti或Cd; x是正整数; y独立地为非零正整数。 半导体钝化层可以具有掺杂的Si,ZnO x / y,ZnS x / y,CdS x / y和TiO x / y或III-V型半导体材料。 半导体钝化层可以掺杂有可以是n型给体或p型受体的掺杂剂,n型引发剂是N,P,As或F; 并且p型受体是B,Al,Ga,In,Be,Mg或Ca。
Abstract:
A display device includes a substrate, a light emitting element layer that is on the substrate and that includes a light emitting element, an encapsulation thin film layer that is on the substrate and the light emitting element layer and that encapsulates the light emitting element layer, a buffer film on the encapsulation thin film layer and adhered to the encapsulation thin film layer, and an optical film on the buffer film and adhered to the buffer film