公开(公告)号：USD980813S1

公开(公告)日：2023-03-14

申请号：US29782977

申请日：2021-05-11

Applicant: ASM IP Holding B.V.

Designer： JinHo Shin ,  JaeHyun Kim ,  JeongHo Lee ,  HyunSoo Jang

公开(公告)号：US11605528B2

公开(公告)日：2023-03-14

申请号：US16921866

申请日：2020-07-06

Applicant: ASM IP Holding B.V.

Inventor： Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01J37/32

Abstract: Examples of a plasma device includes a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts, a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap, and a conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap.

公开(公告)号：US20230069459A1

公开(公告)日：2023-03-02

申请号：US17897311

申请日：2022-08-29

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Eva E. Tois ,  Varun Sharma

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/52

Abstract: The present disclosure is directed to methods and systems for depositing a material within a gap of a substrate in a cyclic deposition process. The methods and systems utilize an inhibitor to preferentially blocks chemisorption of a subsequently introduced first precursor at a portion of available chemisorption sites in the gap to promote deeper penetration of the first precursor into the gap and/or more uniform chemisorption of the first precursor in the gap used in forming a desired material.

公开(公告)号：US20230069359A1

公开(公告)日：2023-03-02

申请号：US18045419

申请日：2022-10-10

Applicant: ASM IP HOLDING B.V.

Inventor： Shuyang Zheng ,  Jereld Lee Winkler ,  Ankit Kimtee ,  Eric James Shero ,  Mimoh Kwatra ,  Dinkar Nandwana ,  Todd Robert Dunn ,  Carl Louis White

IPC: C23C16/455

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. The manifold may further comprise an insulator cap disposed about the first block or the second block. The semiconductor processing device may comprise at least three valve blocks mounted to the second block so that a precursor backflow is prevented. Heater rod(s) can extend through the second block to a location adjacent the first block.

公开(公告)号：US20230064120A1

公开(公告)日：2023-03-02

申请号：US17822576

申请日：2022-08-26

Applicant: ASM IP Holding, B.V

Inventor： Timo Hatanpää ,  Anton Viheraara ,  Mikko Ritala

IPC: C23C16/455 ,  C23C16/08

Abstract: The present disclosure relates to methods for depositing an elemental metal or semimetal-containing material on a substrate by a cyclic deposition process, to an elemental metal or semimetal-containing layer, to a semiconductor structure and a device, and to deposition assemblies for depositing elemental metal or semimetal-containing material on a substrate. A method according to the current disclosure comprises providing a substrate in a reaction chamber, providing a metal or a semimetal precursor to the reaction chamber in a vapor phase, and providing a reducing agent into the reaction chamber in a vapor phase to form elemental metal or semimetal-containing material on the substrate. The reducing agent according to the method comprises a cyclohexadiene compound selected from compounds comprising a germanium-containing substituent.

公开(公告)号：US11594450B2

公开(公告)日：2023-02-28

申请号：US16995281

申请日：2020-08-17

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Steven van Aerde ,  Bert Jongbloed

IPC: H01L21/768 ,  H01L27/11556 ,  H01L27/11582 ,  G11C5/06 ,  H01L23/538 ,  G11C5/02

Abstract: A method for forming a structure with a hole on a substrate is disclosed. The method may comprise: depositing a first structure on the substrate; etching a first part of the hole in the first structure; depositing a plug fill in the first part of the hole; depositing a second structure on top of the first structure; etching a second part of the hole substantially aligned with the first part of the hole in the second structure; and, etching the plug fill of the first part of the hole and thereby opening up the hole by dry etching. In this way 3-D NAND device may be provided.

公开(公告)号：US20230054779A1

公开(公告)日：2023-02-23

申请号：US17887646

申请日：2022-08-15

Applicant: ASM IP Holding B.V.

Inventor： Eric Shero ,  Abhishek Mangoli ,  Harihara Krishnan Krishnamoorthy ,  Daniel Maurice ,  Julio Cesar Diaz ,  Massood Mostaghimi

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/66

Abstract: A reactor system with stuck lift pin detection. The system includes a reaction chamber, a susceptor for supporting wafers in an interior space of the reaction chamber, and an elevator for raising and lowering the susceptor in the interior space. Further, the system includes a lift pin supported by and extending vertically through the susceptor to travel between an up and a down position with movements of the susceptor by the elevator, and a landing pad is provided in the system for receiving a base of the lift pin when the lift pin is in the down position. Significantly, the system also includes a sensor assembly with a sensor positioned at least partially within the interior space of the reaction chamber. An output signal of the sensor is indicative of whether the lift pin is sticking or seizing during travel through the susceptor.

公开(公告)号：US11581220B2

公开(公告)日：2023-02-14

申请号：US17151435

申请日：2021-01-18

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/14 ,  C23C16/02 ,  H01L23/532 ,  C23C16/04 ,  C23C16/455

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

公开(公告)号：US11581186B2

公开(公告)日：2023-02-14

申请号：US15380909

申请日：2016-12-15

Applicant: ASM IP Holding B.V.

Inventor： Ivo Johannes Raaijmakers ,  Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/44 ,  C23C16/46 ,  C23C16/04 ,  C23C16/52 ,  H01L21/027 ,  H01L21/033 ,  G03F7/20 ,  H01L21/02

Abstract: The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

公开(公告)号：US20230017874A1

公开(公告)日：2023-01-19

申请号：US17845150

申请日：2022-06-21

Applicant: ASM IP Holding B.V.

Inventor： Trigagema Gama ,  Ryu Nakano

IPC: C23C16/40 ,  C23C16/458 ,  C23C16/455 ,  C23C16/56

Abstract: Methods and systems for depositing a layer comprising silicon oxide on the substrate are disclosed. Exemplary methods include cyclical deposition methods that include providing a first silicon precursor to the reaction chamber, providing a second silicon precursor, and using a reactant or a non-reactant gas forming silicon oxide on a surface of the substrate. Exemplary methods can further include a treatment step.