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    Flash memory device and method of manufacturing the same
    181.
    发明授权
    Flash memory device and method of manufacturing the same 有权

    公开(公告)号：US07192833B2

    公开(公告)日：2007-03-20

    申请号：US11025279

    申请日：2004-12-29

    Applicant: Jae-Hwang Kim ,  Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Young-Sam Park

    Inventor： Jae-Hwang Kim ,  Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Young-Sam Park

    IPC: H01L21/336

    CPC classification number: H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42328

    Abstract: A flash memory device including a tunnel dielectric layer, a floating gate layer, an interlayer dielectric layer and at least two mold layers formed on a semiconductor substrate and a method of manufacturing the same are provided. By sequentially patterning the layers, a first mold layer pattern and a floating gate layer pattern aligned with each other are formed. Exposed portions of side surfaces of the first mold layer pattern are selectively lateral etched, thereby forming a first mold layer second pattern having grooves in its sidewalls. A gate dielectric layer is formed on the semiconductor substrate adjacent to the floating gate layer pattern. A control gate having a width that is determined by the grooves in the second mold layer pattern is formed on the gate dielectric layer. By removing the first mold layer second pattern, spacers are formed on sidewalls of the control gate. Exposed portions of the interlayer dielectric layer and the floating gate layer pattern are selectively etched, using the spacer as an etch mask to form a floating gate having a width defined by the widths of the groove and spacer.

    Home network system
    182.
    发明申请
    Home network system 有权
    家庭网络系统

    公开(公告)号：US20070025368A1

    公开(公告)日：2007-02-01

    申请号：US10558426

    申请日：2004-05-14

    Applicant: Sam-Chul Ha ,  Seung-Myan Baek ,  Koon-Seok Lee ,  Yong-tae Kim

    Inventor： Sam-Chul Ha ,  Seung-Myan Baek ,  Koon-Seok Lee ,  Yong-tae Kim

    IPC: H04L12/56

    CPC classification number: H04L43/00 ,  H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L43/0817 ,  H04L2012/2849

    Abstract: The present invention discloses a home network system using a living network control protocol. The home network system includes: at least one electric device; first and second networks based on a predetermined living network control protocol (LnCP); an LnCP access device connected to the electric device through the second network; and a network manager connected to the LnCP access device through the first network, for controlling and monitoring the electric device.

    Abstract translation: 本发明公开了一种使用生活网络控制协议的家庭网络系统。 家庭网络系统包括：至少一个电子设备; 基于预定的生活网络控制协议（LnCP）的第一和第二网络; 通过第二网络连接到电气设备的LnCP接入设备; 以及通过第一网络连接到LnCP接入设备的网络管理器，用于控制和监视电子设备。

    Multi-layered, UV-cured polymer electrolyte and lithium secondary battery comprising the same
    184.
    发明授权
    Multi-layered, UV-cured polymer electrolyte and lithium secondary battery comprising the same 有权
    多层，紫外线固化的聚合物电解质和包含其的锂二次电池

    公开(公告)号：US07135254B2

    公开(公告)日：2006-11-14

    申请号：US10275383

    申请日：2001-01-31

    Applicant: Kyung-Suk Yun ,  Byung-Won Cho ,  Won-Il Cho ,  Hyung-Sun Kim ,  Un-Sek Kim ,  Hee-Woo Rhee ,  Yong-Tae Kim

    Inventor： Kyung-Suk Yun ,  Byung-Won Cho ,  Won-Il Cho ,  Hyung-Sun Kim ,  Un-Sek Kim ,  Hee-Woo Rhee ,  Yong-Tae Kim

    IPC: H01M6/18

    CPC classification number: H01M10/0565 ,  H01M2/1653 ,  H01M2/1666 ,  H01M2/1686 ,  H01M6/164 ,  H01M6/168 ,  H01M10/052 ,  H01M2300/0085

    Abstract: The present invention relates to a multi-layered, UV-cured polymer electrolyte and lithium secondary battery comprising the same, wherein the polymer electrolyte comprises: A) a separator layer formed of polymer electrolyte, PP, PE, PVdF or non-woven fabric, wherein the separator layer having two surfaces; B) at least one gelled polymer electrolyte layer located on at least one surface of the separator layer comprising: a) polymer obtained by curing ethyleneglycoldi(meth)acrylate oligomer of the formula (I) by UV irradiation: CH2═CR1COO(CH2CH2O)nCOCR2═CH2 wherein, R1 and R2 are independently hydrogen or methyl group, and n is a integer of 3–20; and b) at least one polymer selected from the group consisting of PVdF-based polymer, PAN-based polymer, PMMA-based polymer and PVC-based polymer; and C) organic electrolyte solution in which lithium salt is dissolved in a solvent.

    Abstract translation: 本发明涉及包含该聚合物电解质的多层紫外线固化的聚合物电解质和锂二次电池，其中所述聚合物电解质包括：A）由聚合物电解质，PP，PE，PVdF或无纺布形成的隔离层， 其中所述隔离层具有两个表面; B）位于分离器层的至少一个表面上的至少一个胶凝聚合物电解质层，包括：a）通过UV照射固化式（I）的乙二醇二（甲基）丙烯酸酯低聚物获得的聚合物：CH 2 CO 2（CH 2 CH 2 CH 2）n CO 2 CH 2 CO 2（CH 2 CH 2 CH 2） 其中，R 1和R 2各自独立地为氢或甲基，n为3-20的整数; 和b）至少一种选自PVdF基聚合物，PAN基聚合物，基于PMMA的聚合物和基于PVC的聚合物的聚合物; 和C）其中锂盐溶解在溶剂中的有机电解质溶液。

    Non-volatile memory device, methods of fabricating and operating the same
    185.
    发明申请
    Non-volatile memory device, methods of fabricating and operating the same 失效
    非易失性存储器件，其制造和操作方法

    公开(公告)号：US20060170028A1

    公开(公告)日：2006-08-03

    申请号：US11323355

    申请日：2005-12-30

    Applicant: Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

    Inventor： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

    IPC: H01L29/76

    CPC classification number: H01L27/11521 ,  G11C16/0425 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/42328

    Abstract: A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.

    Abstract translation: 非易失性存储器件包括形成在衬底上的栅极绝缘层之间的浮置栅极，形成在浮置栅极上的隧道绝缘层，通过栅极绝缘层引入电荷的选择栅极电极和控制栅电极 通过隧道绝缘层引起电荷隧穿。 选择栅电极与控制栅电极绝缘。 根据非易失性存储器件，在浮动栅极上形成选择栅电极和控制栅电极，从而向相应的栅电极施加电压以写入和擦除数据。

    Split gate type nonvolatile semiconductor memory device, and method of fabricating the same
    186.
    发明授权
    Split gate type nonvolatile semiconductor memory device, and method of fabricating the same 失效
    分路型非易失性半导体存储器件及其制造方法

    公开(公告)号：US07029974B2

    公开(公告)日：2006-04-18

    申请号：US11083130

    申请日：2005-03-17

    Applicant: Heeseog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim ,  Yong-suk Choi

    Inventor： Heeseog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim ,  Yong-suk Choi

    IPC: H01L21/336

    CPC classification number: H01L27/115 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/7881

    Abstract: A split gate type nonvolatile semiconductor memory device and a method of fabricating a split gate type nonvolatile semiconductor memory device are provided. A gate insulating layer and a floating-gate conductive layer are formed on a semiconductor substrate. A mask layer pattern is formed on the floating-gate conductive layer to define a first opening extending in a first direction. First sacrificial spacers having a predetermined width are formed on both sidewalls corresponding to the mask layer pattern. An inter-gate insulating layer is formed on the floating-gate conductive layer. The first sacrificial spacers are removed, and the floating-gate conductive layer is etched until the gate insulating layer is exposed. A tunneling insulating layer is formed on an exposed portion of the floating-gate conductive layer. A control-gate conductive layer is formed on a surface of the semiconductor substrate. Second sacrificial spacers having predetermined widths are formed on the control-gate conductive layer. A split control gate is formed in the first opening, by etching the exposed control-gate conductive layer. The remaining mask layer pattern and inter-gate insulating layer are etched until the floating-gate conductive layer is exposed. The exposed floating-gate conductive layer is etched to form a split floating gate in the first opening.

    Abstract translation: 提供一种分离栅极型非易失性半导体存储器件及其制造分离栅型非易失性半导体存储器件的方法。 在半导体衬底上形成栅绝缘层和浮栅导电层。 掩模层图案形成在浮栅导电层上以限定沿第一方向延伸的第一开口。 具有预定宽度的第一牺牲间隔物形成在对应于掩模层图案的两个侧壁上。 栅极间绝缘层形成在浮栅导电层上。 去除第一牺牲间隔物，并且蚀刻浮栅导电层，直到露出栅极绝缘层。 隧道绝缘层形成在浮栅导电层的露出部分上。 在半导体衬底的表面上形成控制栅导电层。 在控制栅极导电层上形成具有预定宽度的第二牺牲间隔物。 通过蚀刻暴露的控制栅极导电层，在第一开口中形成分裂控制栅极。 蚀刻剩余的掩模层图案和栅极间绝缘层，直到浮栅导电层露出。 蚀刻暴露的浮栅导电层，以在第一开口中形成分离浮栅。

    Self-aligned 1 bit local SONOS memory cell and method of fabricating the same
    187.
    发明申请
    Self-aligned 1 bit local SONOS memory cell and method of fabricating the same 失效
    自对准1位本地SONOS存储单元及其制造方法

    公开(公告)号：US20050029574A1

    公开(公告)日：2005-02-10

    申请号：US10912046

    申请日：2004-08-06

    Applicant: Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

    Inventor： Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

    IPC: H01L21/8247 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8246 ,  H01L27/112 ,  H01L27/115 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792

    CPC classification number: H01L27/11568 ,  H01L27/115

    Abstract: A self-aligned 1 bit silicon oxide nitride oxide silicon (SONOS) cell and a method of fabricating the same has high uniformity between adjacent SONOS cells, since the lengths of nitride layers do not vary due to misalignment when etching word lines of the 1 bit SONOS cells. An insulating layer pattern that forms a sidewall of a word line is formed on a semiconductor substrate, and a word line for a gate is formed on the sidewall thereof. Etching an ONO layer using a self-aligned etching spacer provides uniform adjacent SONOS cells.

    Abstract translation: 自对准1比特氧化硅氮氧化物硅（SONOS）单元及其制造方法在相邻SONOS单元之间具有高均匀性，因为当蚀刻1比特的字线时，氮化物层的长度不会由于未对准而变化 SONOS细胞。 在半导体衬底上形成形成字线侧壁的绝缘层图案，在其侧壁上形成用于栅极的字线。 使用自对准蚀刻间隔物蚀刻ONO层提供均匀的相邻SONOS电池。

    Linear compressor
    189.
    发明授权
    Linear compressor 有权
    线性压缩机

    公开(公告)号：US09217429B2

    公开(公告)日：2015-12-22

    申请号：US13561435

    申请日：2012-07-30

    Applicant: Jin Seok Hu ,  Shin Hyun Park ,  Yong Tae Kim ,  Hoon Bong Lee ,  Kye Lyong Kang

    Inventor： Jin Seok Hu ,  Shin Hyun Park ,  Yong Tae Kim ,  Hoon Bong Lee ,  Kye Lyong Kang

    IPC: F04B17/04 ,  F04B49/06 ,  F04B35/04 ,  H02P25/02 ,  F04B39/06

    CPC classification number: F04B49/06 ,  F04B35/04 ,  F04B35/045 ,  F04B39/06 ,  F04B2203/0401 ,  F04B2203/0402 ,  H02P25/032

    Abstract: A linear compressor which can perform the natural cooling capacity modulation, even if a capacitor connected to a motor is removed. The linear compressor includes a fixed member having a compression space therein, a movable member linearly reciprocated in the fixed member to compress a refrigerant sucked into the compression space, and one or more springs provided to elastically support the movable member in the motion direction of the movable member. The compressor also includes a motor connected to the movable member to linearly reciprocate the movable member in the axial direction, and a motor control unit performing the cooling capacity modulation by the reciprocation of the movable member according to a load, by controlling an AC voltage applied to the motor so that a stroke of the movable member can be proportional to the magnitude of the AC voltage applied to the motor.

    Abstract translation: 即使除去与电动机连接的电容器，也能够进行自然冷却能力调整的线性压缩机。 线性压缩机包括其中具有压缩空间的固定构件，可动构件，其在固定构件中线性地往复运动，以压缩被吸入压缩空间的制冷剂;以及一个或多个弹簧，其设置成沿着运动方向弹性地支撑可动构件 活动件。 压缩机还包括连接到可移动部件的电动机，以沿着轴向线性地往复运动的部件;以及电动机控制部，通过控制施加的交流电压，通过可动部件的往复运动，根据负载进行冷却能力调整 使得可动构件的冲程可以与施加到电动机的AC电压的大小成比例。

    Apparatus and method of diagnosing health by using voice
    190.
    发明授权
    Apparatus and method of diagnosing health by using voice 有权
    使用声音诊断健康的仪器和方法

    公开(公告)号：US09055861B2

    公开(公告)日：2015-06-16

    申请号：US13397744

    申请日：2012-02-16

    Applicant: Hee-jin Oh ,  Yong-tae Kim ,  Hwan Shim

    Inventor： Hee-jin Oh ,  Yong-tae Kim ,  Hwan Shim

    IPC: A61B5/00 ,  A61B7/00

    CPC classification number: A61B5/4803 ,  A61B5/4082 ,  A61B5/7246 ,  A61B7/00 ,  A61B7/003 ,  A61B7/04

    Abstract: A method and apparatus for diagnosing a user's health state are provided. The apparatus includes including a voice detecting unit which detects and monitors a user's voice; a voice analyzing unit which extracts a voice feature from a voice detected by the voice detecting unit, based on a health state to be diagnosed; a voice diagnosing unit which diagnoses a health state of the user by comparing the voice feature extracted by the voice analyzing unit with an abnormal state reference, and which monitors a change in the health state; and a diagnosis outputting unit which outputs information regarding the health state and a health state change diagnosed by the voice diagnosing unit.

    Abstract translation: 提供了一种用于诊断用户健康状态的方法和装置。 该装置包括：检测并监视用户声音的语音检测单元; 语音分析单元，其基于要被诊断的健康状态从语音检测单元检测到的语音中提取语音特征; 语音诊断单元，其通过将由语音分析单元提取的语音特征与异常状态参考进行比较来诊断用户的健康状态，并监视健康状态的变化; 以及诊断输出单元，其输出关于由语音诊断单元诊断的健康状态和健康状态改变的信息。

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