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188 条记录 (耗时 0.074 秒)

    ATM header compression using hash tables
    186.
    发明授权
    ATM header compression using hash tables 有权
    使用哈希表的ATM头压缩

    公开(公告)号：US07400627B2

    公开(公告)日：2008-07-15

    申请号：US10702456

    申请日：2003-11-07

    申请人： Yan Wu ,  Song Bi ,  Timothy Bornemisza

    发明人： Yan Wu ,  Song Bi ,  Timothy Bornemisza

    IPC分类号： H04L12/28 ,  H04J3/24

    CPC分类号： H04L12/5601 ,  H04L2012/5652

    摘要： Disclosed are exemplary techniques for compressing ATM cells by substituting reduced headers for the original headers. A header table may be maintained at the transmitting end whereby headers are stored in table entries based on a table index generated from a hash function applied to the headers. A copy of the header table may be maintained at the receiving end and may be updated by populating idle cells with header table contents. Upon receipt of a reduced ATM cell at the receiving end, the reduced header may be replaced with a full header obtained from the copy of the header table maintained at the receiving end. The present invention further provides techniques for registration and management of hash collisions.

    摘要翻译： 公开了用于通过用缩小的报头替换原始报头来压缩ATM信元的示例性技术。 可以在发送端维护头表，由此基于从应用于报头的散列函数生成的表索引，将报头存储在表条目中。 标题表的副本可以在接收端保持，并且可以通过用标题表内容填充空闲小区来更新。 在接收端接收到减少的ATM信元时，可以用从保持在接收端的报头表的副本获得的全标头替换减少的报头。 本发明还提供了用于哈希冲突的注册和管理的技术。

    METHOD FOR CONTROLLING POWER CONSUMPTION AND MULTI-PROCESSOR SYSTEM USING THE SAME
    187.
    发明申请
    METHOD FOR CONTROLLING POWER CONSUMPTION AND MULTI-PROCESSOR SYSTEM USING THE SAME 审中-公开
    用于控制功耗的方法和使用该功能的多处理器系统

    公开(公告)号：US20070198870A1

    公开(公告)日：2007-08-23

    申请号：US11461440

    申请日：2006-07-31

    申请人： Hown Cheng ,  Yan Wu ,  Weisung Tsao ,  Wei-Lung Chang

    发明人： Hown Cheng ,  Yan Wu ,  Weisung Tsao ,  Wei-Lung Chang

    IPC分类号： G06F1/00

    CPC分类号： G06F1/3203 ,  G06F1/3287 ,  G06F9/544 ,  Y02D10/171

    摘要： A multi-processor system comprises a clock generator, a clock controller, a main processor, a plurality of co-processors and an interrupt control interface. Because the main processor and the co-processors need not work together to deliver the processing result, the multi-processor system may be designed that each processor in the multi-processor system is independently switched to operate at lower clock or power down completely according to the feedback of the hardware performance detection for each processor when the whole system is in active usage. This means on-demand power saving for the multi-processor system, so as to save power greatly.

    摘要翻译： 多处理器系统包括时钟发生器，时钟控制器，主处理器，多个协处理器和中断控制接口。 因为主处理器和协处理器不需要一起工作来提供处理结果，所以可以设计多处理器系统，使得多处理器系统中的每个处理器被独立地切换为根据 当整个系统处于主动使用状态时，对每个处理器的硬件性能检测的反馈。 这意味着多处理器系统的按需节电，从而大大节省电力。

    Method for forming substrates for MOS transistor components and its products
    188.
    发明申请
    Method for forming substrates for MOS transistor components and its products 有权
    用于形成用于MOS晶体管组件及其产品的衬底的方法

    公开(公告)号：US20070117407A1

    公开(公告)日：2007-05-24

    申请号：US11603750

    申请日：2006-11-22

    申请人： Juei-Nai Kwo ,  Ming-Hwei Hong ,  Wei Lee ,  Hsiang Chang ,  Yan Wu ,  Kun Lee ,  Yi Lee

    发明人： Juei-Nai Kwo ,  Ming-Hwei Hong ,  Wei Lee ,  Hsiang Chang ,  Yan Wu ,  Kun Lee ,  Yi Lee

    IPC分类号： H01L21/31

    CPC分类号： H01L21/28194 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02269 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31645 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

    摘要： The present invention provides a method for forming substrates for MOS (metal oxide semiconductor) transistor, comprising the following steps: (A) In a reduced-pressure environment having a pressure lower than 1×10−6 Torr, a base for accomplishing the surface reconstruction and a solid-state metal oxide source is provided, wherein the solid-state metal oxide source is chosen from the group consisting of the following: hafnium oxide, aluminum oxide, scandium oxide, yttrium oxide, titanium oxide, gallium gadolinium oxide and metal oxides of rare earth elements; and (B) vaporize the solid-state metal oxide source in order to make the solid-state metal oxide source become a metal oxide molecular beam and, in a working substrate temperature that is required to achieve an amorphous state of a first metal oxide film, deposit on the base having an amorphous state so as to further fabricate a substrate for MOS transistors.

    摘要翻译： 本发明提供一种用于形成MOS（金属氧化物半导体）晶体管的衬底的方法，包括以下步骤：（A）在压力低于1×10 -6 Torr的减压环境中， 提供了用于完成表面重建的基底和固态金属氧化物源，其中固态金属氧化物源选自下列物质：氧化铪，氧化铝，氧化钪，氧化钇，氧化钛， 镓钆氧化物和稀土元素的金属氧化物; 和（B）使固态金属氧化物源汽化以使固态金属氧化物源成为金属氧化物分子束，并且在实现第一金属氧化物膜的无定形状态所需的工作衬底温度 沉积在具有非晶状态的基底上，从而进一步制造用于MOS晶体管的衬底。