公开(公告)号：US5730634A

公开(公告)日：1998-03-24

申请号：US601566

申请日：1996-02-14

Applicant: Nobuya Seko

Inventor： Nobuya Seko

IPC: G01R31/25 ,  H01J9/42

CPC classification number: G01R31/25 ,  H01J9/42 ,  H01J2201/30403

Abstract: An inspection apparatus including an XY movable table onto which an inspection object wafer is placed in position and a prober for detecting electrons emitted from a field-emission cold cathode of the wafer is provided in a vacuum chamber. A characteristic of the field-emission cold cathode is inspected before it is mounted onto a device.

Abstract translation: 一种检查装置，其包括XY检测对象晶片放置在其上的XY可移动台，并且在真空室中设置用于检测从晶片的场致发射冷阴极发射的电子的探测器。 在将场致发射冷阴极安装到设备上之前，先进行检查。

公开(公告)号：US5719466A

公开(公告)日：1998-02-17

申请号：US650665

申请日：1996-05-20

Applicant: Chun-hui Tsai

Inventor： Chun-hui Tsai

IPC: H01J9/50 ,  H01J29/70

CPC classification number: H01J9/50 ,  H01J2201/30403 ,  H01J2329/00 ,  Y02W30/828

Abstract: A flat panel display having a repair capability, a process for repairing such a display having defects involving short circuits between a field emission tip and an adjacent conductor, and a process for forming a flat panel display with repair capability, are described. The flat panel display has a dielectric base substrate, upon which are formed cathode columns of parallel, spaced conductors. Gate lines, also formed of parallel, spaced conductors, are located over and perpendicular to the cathode columns. A dielectric layer is formed between the cathode columns and the gate lines. Pixels of the display are located at the intersections of the cathode columns and the gate lines. A plurality of openings are formed in the gate lines and in the dielectric layer, at each of the pixels. A plurality of field emission microtips, at each of the pixels, connects to and extends up from the cathode columns and into the openings. Slots in the gate lines are formed contiguously between the openings and parallel to the direction of the gate lines, whereby the slots provide a repair capability. The flat panel display is tested to detect the defect, located at an emitter location. The gate line is cut, preferably with a laser beam, on both sides of the emitter.

Abstract translation: 描述了具有修复能力的平板显示器，用于修复具有涉及场致发射尖端和相邻导体之间的短路的缺陷的显示器的处理以及用于形成具有修复能力的平板显示器的工艺。 平板显示器具有电介质基底，在其上形成平行的间隔导体的阴极柱。 栅极线也由平行的间隔导体形成，位于阴极柱之上并垂直于阴极柱。 在阴极柱和栅极线之间形成介电层。 显示器的像素位于阴极柱和栅极线的交点处。 在栅极线和电介质层中，在每个像素处形成多个开口。 在每个像素处的多个场致发射微尖端连接到阴极柱并向上延伸到开口中。 栅极线中的狭缝在开口之间连续形成并且平行于栅极线的方向，由此狭缝提供修复能力。 测试平板显示器以检测位于发射器位置的缺陷。 栅极线在发射器的两侧被切割，最好用激光束切割。

公开(公告)号：US5709577A

公开(公告)日：1998-01-20

申请号：US361616

申请日：1994-12-22

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC: H01J31/12 ,  H01J1/304 ,  H01J9/02 ,  H01J23/06 ,  H01J29/04 ,  H01J1/30

CPC classification number: H01J23/06 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J61/0677 ,  H01J61/0737

Abstract: Applicants have discovered methods for making electron emitters using commercially available diamond particles treated to enhance their capability for electron emission under extremely low electric fields. Specifically, applicants have discovered that electron emitters comprising ultra-fine (5-10,000 nm) diamond particles heat-treated by a hydrogen plasma, can produce electron emission current density of at least 0.1 mA/mm.sup.2 at extremely low electric fields of 0.5-1.5 V/.mu.m. These field values are about an order of magnitude lower than exhibited by the best defective CVD diamond and almost two orders of magnitude lower than p-type semiconducting diamond. Emitters are preferably fabricated by suspending the ultra-fine diamond particles, preferably in the nanometer size range, in an aqueous solution, applying the suspension as a coating onto a conducting substrate such as n-type Si or metal, and then subjecting the coated substrate to a plasma of hydrogen, preferably at temperatures above 300.degree. C. for a period of 30 minutes or longer. The resulting emitters show excellent emission properties such as extremely low turn-on voltage, good uniformity and high current densities. It is further found that the emission characteristics remain the same even after the plasma treated diamond surface is exposed to air for several months.

Abstract translation: 申请人已经发现使用经过处理以提高其在极低电场下电子发射能力的市售金刚石颗粒来制造电子发射体的方法。 具体地，申请人已经发现，包含由氢等离子体热处理的超细（5-10,000nm）金刚石颗粒的电子发射体可在0.5-1.5的极低电场下产生至少0.1mA / mm 2的电子发射电流密度 V /亩。 这些场值比由最好的有缺陷的CVD金刚石显示的低一个数量级，比p型半导体金刚石低两个数量级。 优选地，通过将​​优选在纳米尺寸范围的超细金刚石颗粒悬浮在水溶液中，将悬浮液作为涂层施涂到诸如n型Si或金属的导电基材上，然后对涂覆的基材 至氢的等离子体，优选在高于300℃的温度下持续30分钟或更长时间。 所得到的发射体显示出优异的发射特性，例如极低的导通电压，良好的均匀性和高的电流密度。 进一步发现即使在等离子体处理的金刚石表面暴露于空气几个月之后，发射特性也保持不变。

公开(公告)号：US5698934A

公开(公告)日：1997-12-16

申请号：US695441

申请日：1996-08-12

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/8625

Abstract: In accordance with the invention, a field emission device is made by disposing emitter material on an insulating substrate, applying masking particles to the emitter material, applying an insulating film and a gate conductor film over the masking particles and emitter material and removing the particles to reveal a random distribution of apertures to the emitter material. The result is a novel and economical field emission device having numerous randomly distributed emission apertures which can be used to make low cost flat panel displays.

Abstract translation: 根据本发明，通过将发射体材料设置在绝缘基板上，将掩模粒子施加到发射极材料，在掩模颗粒和发射体材料上施加绝缘膜和栅极导体膜，并将颗粒除去，制成场致发射器件 揭示孔径随机分布到发射体材料。 结果是一种新颖且经济的场致发射装置，其具有许多随机分布的发射孔，其可用于制造低成本的平板显示器。

公开(公告)号：US5689151A

公开(公告)日：1997-11-18

申请号：US535506

申请日：1995-09-28

Applicant: Robert M. Wallace ,  John M. Anthony ,  Bruce E. Gnade ,  Chih-Chen Cho

Inventor： Robert M. Wallace ,  John M. Anthony ,  Bruce E. Gnade ,  Chih-Chen Cho

IPC: H01J7/18 ,  H01J29/08 ,  H01J29/94 ,  H01J17/24

CPC classification number: H01J29/94 ,  H01J29/085 ,  H01J7/18 ,  H01J2201/30403 ,  H01J2329/00

Abstract: An anode plate (10) for use in a field emission flat panel display device (8) comprises a transparent substrate (26) having a plurality of spaced-apart, electrically conductive regions (28) which form the anode electrode of the display device (8). The conductive regions (28) are covered by a luminescent material (24). A getter material (29) is deposited on the substrate (26) and between the conductive regions (28) of the anode plate (10). The getter material (29) is preferably an electrically nonconductive, high porosity, and low density material, such as an aerogel or xerogel. Methods of fabricating the getter material (29) on the anode plate (10) are disclosed.

Abstract translation: 一种用于场致发射平板显示装置（8）的阳极板（10）包括具有形成显示装置的阳极电极的多个间隔开的导电区域（28）的透明基板（26） 8）。 导电区域（28）被发光材料（24）覆盖。 吸气材料（29）沉积在衬底（26）上并在阳极板（10）的导电区域（28）之间。 吸气材料（29）优选是不导电，高孔隙率和低密度材料，例如气凝胶或干凝胶。 公开了在阳极板（10）上制造吸气材料（29）的方法。

公开(公告)号：US5665421A

公开(公告)日：1997-09-09

申请号：US725941

申请日：1996-10-08

Applicant: David L. Bergeron ,  John M. Macaulay ,  Roger W. Barton ,  Jeffrey D. Morse

Inventor： David L. Bergeron ,  John M. Macaulay ,  Roger W. Barton ,  Jeffrey D. Morse

IPC: H01J3/02 ,  H01J9/02 ,  B05D5/12

CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/319

Abstract: A method is provided for creating gated filament structures for a field emission display. A multi-layer structure is provided that includes a substrate, an insulating layer, a metal gate layer positioned on a top surface of the insulating layer and a gate encapsulation layer positioned on a top surface of the metal gate layer. A plurality of gates are provided and define a plurality of apertures on the top of the insulating layer. A plurality of spacers are formed in the apertures at their edges on the top surface of the insulating layer. The spacers are used as masks for etching the insulating layer and form a plurality of pores in the insulating layer. The pores are plated with a filament material to create a plurality of filaments. The pores can be overplated to create the plurality of filaments. The filaments are vertically self-aligned in the pores.

Abstract translation: 提供了一种用于产生用于场致发射显示器的门控灯丝结构的方法。 提供了一种多层结构，其包括基板，绝缘层，位于绝缘层的顶表面上的金属栅极层和位于金属栅极层顶表面上的栅极封装层。 提供多个栅极并且在绝缘层的顶部上限定多个孔。 在绝缘层的顶表面上的边缘处的孔中形成多个间隔物。 间隔物用作蚀刻绝缘层并在绝缘层中形成多个孔的掩模。 用细丝材料电镀细孔以产生多根长丝。 孔可以被过度铺展以产生多根细丝。 细丝在孔中垂直自对准。

公开(公告)号：US5656892A

公开(公告)日：1997-08-12

申请号：US559912

申请日：1995-11-17

Applicant: David A. Zimlich ,  Glen E. Hush

Inventor： David A. Zimlich ,  Glen E. Hush

IPC: G09G3/22 ,  H05B41/392 ,  H05B37/02 ,  H01J19/24

CPC classification number: G09G3/22 ,  H05B41/3921 ,  G09G2320/02 ,  H01J2201/30403 ,  H01J2329/00

Abstract: A field emission display includes an emitter driving circuit for providing current to emitters in the display. The emitter driving circuit includes a current mirror to monitor actual current to each pixel in the array. The actual current is then compared to a reference current derived from an image signal based upon an expected current draw of the emitter to produce an error signal. The error signal is fed back to the input of the emitter driver circuit and the emitter driver circuit produces a corrected emitter current in response. During transitions in the image signal, error detection is briefly disabled to allow the emitter driver circuit to respond to the image signal.

Abstract translation: 场发射显示器包括用于向显示器中的发射器提供电流的发射极驱动电路。 发射极驱动电路包括电流镜以监视阵列中每个像素的实际电流。 然后将实际电流与基于图像信号的参考电流进行比较，该参考电流基于发射器的预期电流消耗而产生误差信号。 误差信号反馈到发射极驱动电路的输入，发射极驱动电路产生响应的校正的发射极电流。 在图像信号的转换期间，短暂地禁止错误检测，以允许发射器驱动电路响应图像信号。

公开(公告)号：US5637950A

公开(公告)日：1997-06-10

申请号：US331458

申请日：1994-10-31

Applicant: Sungho Jin ,  Gregory P. Kochanski ,  Lawrence Seibles ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory P. Kochanski ,  Lawrence Seibles ,  Wei Zhu

IPC: C30B29/04 ,  C30B30/02 ,  C30B31/20 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/205 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm.sup.-1 broadened by a full width at half maximum .DELTA.K in the range 5-15 cm.sup.-1 (and preferably 7-11 cm.sup.-1). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm.sup.2 or more at a low applied field of 25 V/.mu.m or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 .mu.m in diameter at fields of 15 V/.mu.m or less.

Abstract translation: 申请人已经发现了用于制造，处理和使用金刚石的方法，其大大增强了它们的低电压发射能力。 具体来说，申请人已经发现，生长或处理以增加缺陷浓度的富含缺陷的钻石 - 金刚石具有增强的低电压发射性能。 富含缺陷的金刚石的特征在于在1332cm-1处的金刚石峰，在5-15cm -1（优选7-11cm -1）的范围内以最大DELTA K的全宽度加宽的拉曼光谱。 这样的富含缺陷的金刚石可以在25V /μm以下的低施加电场下发射0.1mA / mm 2以上的电子密度。 特别有利的结构在15V /μm或更小的场中使用直径小于10μm的岛或颗粒阵列中的这种金刚石。

公开(公告)号：US5616368A

公开(公告)日：1997-04-01

申请号：US381375

申请日：1995-01-31

Applicant: Sungho Jin ,  Gregory P. Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory P. Kochanski ,  Wei Zhu

IPC: H01J1/304 ,  H01J9/02 ,  H01J23/06 ,  B05D5/00 ,  B01J3/06 ,  H05H1/00

CPC classification number: H01J9/025 ,  H01J23/06 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: In accordance with the present invention, a field emission device is made by pre-activating ultra-fine diamond particles before applying them to the device substrate. This initial pre-activation increases manufacturing speed and reduces cost and reduces potential damage to the device substrate from exposure to high temperature hydrogen plasma.

Abstract translation: 根据本发明，通过在将超细金刚石颗粒施加到器件衬底之前预激活来制造场致发射器件。 这种初始预激活增加了制造速度并且降低了成本并减少了暴露于高温氢等离子体对器件衬底的潜在损害。

公开(公告)号：US5608283A

公开(公告)日：1997-03-04

申请号：US269283

申请日：1994-06-29

Applicant: Jonathan C. Twichell ,  George R. Brandes ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

Inventor： Jonathan C. Twichell ,  George R. Brandes ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/24124 ,  Y10T428/24198

Abstract: In one electron-emitting device, non-insulating particle bonding material (24) securely bonds electron-emissive carbon-containing particles (22) to an underlying non-insulating region (12). The carbon in each carbon-containing particle is in the form of diamond, graphite, amorphous carbon, or/and silicon carbide. In another electron-emitting device, electron-emissive pillars (22/28) overlie a non-insulating region (12). Each pillar is formed with an electron-emissive particle (22) and an underlying non-insulating pedestal (28).

Abstract translation: 在一个电子发射器件中，非绝缘粒子接合材料（24）将电子发射含碳颗粒（22）牢固地粘合到下面的非绝缘区域（12）上。 每个含碳颗粒中的碳为金刚石，石墨，无定形碳或/和碳化硅的形式。 在另一个电子发射器件中，电子发射柱（22/28）覆盖在非绝缘区（12）上。 每个柱形成有电子发射颗粒（22）和下面的非绝缘基座（28）。