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    Charged particle beam apparatus
    182.
    发明申请
    Charged particle beam apparatus 有权
    带电粒子束装置

    公开(公告)号：US20060076489A1

    公开(公告)日：2006-04-13

    申请号：US11196399

    申请日：2005-08-04

    Applicant: Takashi Ohshima ,  Mitsugu Sato ,  Soichi Katagiri

    Inventor： Takashi Ohshima ,  Mitsugu Sato ,  Soichi Katagiri

    IPC: G21K7/00

    CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/0268 ,  H01J2237/04756 ,  H01J2237/1205 ,  H01J2237/121 ,  H01J2237/188 ,  H01J2237/24465 ,  H01J2237/2611 ,  H01J2237/31749

    Abstract: A charged particle beam apparatus in which an electrostatic lens is used as a main focusing element to obtain a subminiature high-sensitivity high-resolution SEM, a drift tube for an electron beam is located inside a column between an electron source and a sample, and a detector for secondary electrons is located inside the drift tube. This solves the problem associated with the provision of a secondary electron detector, which heretofore has been a bottleneck in making a subminiature high-resolution SEM column.

    Abstract translation: 使用静电透镜作为主聚焦元件以获得超小型高灵敏度高分辨率SEM的带电粒子束装置，用于电子束的漂移管位于电子源和样品之间的列内，并且 用于二次电子的检测器位于漂移管内。 这解决了与提供二次电子检测器相关的问题，这种二次电子检测器迄今已成为制造超小型高分辨率SEM柱的瓶颈。

    Multi-charged beam lens, charged-particle beam exposure apparatus using the same, and device manufacturing method
    184.
    发明授权
    Multi-charged beam lens, charged-particle beam exposure apparatus using the same, and device manufacturing method 有权
    多光束透镜，使用其的带电粒子束曝光装置及其制造方法

    公开(公告)号：US06946662B2

    公开(公告)日：2005-09-20

    申请号：US10615955

    申请日：2003-07-10

    Applicant: Haruhito Ono ,  Kenichi Nagae ,  Masaki Takakuwa ,  Yoshinori Nakayama ,  Harunobu Muto

    Inventor： Haruhito Ono ,  Kenichi Nagae ,  Masaki Takakuwa ,  Yoshinori Nakayama ,  Harunobu Muto

    IPC: G21K1/08 ,  H01J3/14 ,  H01J37/12 ,  H01J37/317

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/12 ,  H01J37/3177 ,  H01J2237/1205

    Abstract: There is provided a multi-charged beam lens constituted by stacking, via fiber chips serving as insulator members along the optical path of a charged beam, a plurality of electrodes having a charged beam passing region where a plurality of charged beam apertures are formed. The electrodes have shield apertures between the charged beam passing region and the fiber chips. A conductive shield extends through the shield apertures without contacting the electrodes, and cuts off a straight path which connects the charged beam passing region and the fiber chips serving as insulator members. This prevents the influence of charge-up of the insulator members on an electron beam in the multi-charged beam lens.

    Abstract translation: 提供了一种多带电波束透镜，其通过沿着带电波束的光路用作绝缘体构件的光纤芯片堆叠，具有形成有多个带电束孔的带电光束通过区域的多个电极构成。 电极在带电光束通过区域和光纤芯片之间具有屏蔽孔。 导电屏蔽层不会接触电极而延伸通过屏蔽孔，并且切断连接充电光束通过区域和用作绝缘体构件的光纤芯片的直线路径。 这样可以防止绝缘体的充电对多电荷束透镜中的电子束的影响。

    MEMS BASED CHARGED PARTICLE DEFLECTOR DESIGN
    185.
    发明申请
    MEMS BASED CHARGED PARTICLE DEFLECTOR DESIGN 失效
    基于MEMS的充电颗粒偏转器设计

    公开(公告)号：US20050199822A1

    公开(公告)日：2005-09-15

    申请号：US10987871

    申请日：2004-11-12

    Applicant: Rahul Saini ,  Zoran Jandric ,  David Tuggle

    Inventor： Rahul Saini ,  Zoran Jandric ,  David Tuggle

    IPC: G01K1/08 ,  H01J3/14 ,  H01J3/26 ,  H01J37/04 ,  H01J37/067 ,  H01L21/44 ,  H05K1/00

    CPC classification number: H01J37/04 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/28 ,  H01J37/3177 ,  H01J2237/03 ,  H01J2237/0492 ,  H01J2237/1205

    Abstract: A microcolumn including a plurality of beam modification components coupled to an assembly substrate, wherein the plurality of beam modification components includes: (1) an extractor component; (2) a first focusing electrode component; (3) a first anode component; (4) a first deflector component; (5) a second focusing electrode component; (6) a second deflector component; (7) a third focusing electrode component; (8) a third deflector component; (9) a second anode component; (10) a fourth focusing electrode component; and (11) a third anode component. The beam modification components may be ordered on the substrate in this sequence or other sequences.

    Abstract translation: 一种微柱，包括耦合到组件衬底的多个光束修改部件，其中所述多个光束修改部件包括：（1）提取器部件; （2）第一聚焦电极组件; （3）第一阳极部件; （4）第一偏转器部件; （5）第二聚焦电极部件; （6）第二偏转器部件; （7）第三聚焦电极部件; （8）第三偏转器部件; （9）第二阳极部件; （10）第四聚焦电极组件; 和（11）第三阳极组件。 束修饰组分可以按照该顺序或其它序列在衬底上排列。

    Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
    187.
    发明申请
    Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device 有权
    使用多轴电子透镜的多光束曝光装置，半导体装置的制造方法

    公开(公告)号：US20010028046A1

    公开(公告)日：2001-10-11

    申请号：US09824880

    申请日：2001-04-04

    Inventor： Shinichi Hamaguchi ,  Takeshi Haraguchi ,  Hiroshi Yasuda

    IPC: G21K005/10 ,  H01J037/08

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/0635 ,  H01J2237/1205

    Abstract: An electron beam exposure apparatus for exposing a wafer includes: a multi-axis electron lens operable to converge a plurality of electron beams independently of each other; and a lens-intensity adjuster including a substrate provided to be substantially parallel to the multi-axis electron lens, and a lens-intensity adjusting unit operable to adjust the lens intensity of the multi-axis electron lens applied to the electron beams passing through the lens openings, respectively.

    Abstract translation: 用于曝光晶片的电子束曝光装置包括：可操作以彼此独立地会聚多个电子束的多轴电子透镜; 以及透镜强度调节器，其包括设置为基本上平行于所述多轴电子透镜的基板，以及透镜强度调节单元，其可操作以调节施加到通过所述多轴电子透镜的电子束的多轴电子透镜的透镜强度 镜头开口。

    T-shaped electron-beam microcolumn as a general purpose scanning electron microscope
    189.
    发明授权
    T-shaped electron-beam microcolumn as a general purpose scanning electron microscope 失效
    T型电子束微柱作为通用扫描电子显微镜

    公开(公告)号：US6023060A

    公开(公告)日：2000-02-08

    申请号：US34893

    申请日：1998-03-03

    Applicant: Tai-Hon P. Chang ,  Ho-Seob Kim

    Inventor： Tai-Hon P. Chang ,  Ho-Seob Kim

    IPC: H01J37/26 ,  G01Q30/02 ,  G01Q30/20 ,  G01Q70/08 ,  G01S19/04 ,  G01S19/13 ,  H01J37/16 ,  H01J37/28 ,  H01J3/14 ,  G21K7/00

    CPC classification number: H01J37/28 ,  H01J2237/1205

    Abstract: A charged particle-beam microcolumn, which for example may be used for charged particle microscopy, with a T-shape configuration has a relatively narrow base structure supporting the beam forming charged particle optical column. The narrow base structure permits the T-shaped microcolumn and sample to be positioned at an angle other than normal with respect to each other, which allows generation of three-dimensional-like images of the sample surface. Thus, the incidence angle of the charged particle beam generated by the T-shaped microcolumn may be varied while a short working distance is maintained. A conventional secondary/backscattered charged particle detector may be used because the reflected angle of the charged particles allows a charged particle detector to be separated from the T-shaped microcolumn. Further, the small size of the T-shaped microcolumn permits observation of different parts of a large stationary sample by moving the T-shaped microcolumn with respect to the sample. Moreover, multiple T-shaped microcolumns may be arrayed to improve throughput.

    Abstract translation: 具有T形构造的例如可用于带电粒子显微镜的带电粒子束微柱具有支撑束形成带电粒子光学柱的相对狭窄的基底结构。 狭窄的基部结构允许T形微柱和样品相对于彼此以正常的角度定位，这允许产生样品表面的三维样图像。 因此，由T形微柱产生的带电粒子束的入射角可以变化，同时保持短的工作距离。 可以使用常规的二次/反向散射带电粒子检测器，因为带电粒子的反射角允许带电粒子检测器与T形微柱分离。 此外，T形微柱的小尺寸允许通过相对于样品移动T形微柱来观察大的固定样品的不同部分。 此外，可以排列多个T形微柱以提高产量。

    Compact, integrated electron beam imaging system
    190.
    发明授权
    Compact, integrated electron beam imaging system 失效
    紧凑，集成的电子束成像系统

    公开(公告)号：US5122663A

    公开(公告)日：1992-06-16

    申请号：US734986

    申请日：1991-07-24

    Applicant: Tai-Hon P. Chang ,  Harry J. Mamin ,  Daniel Rugar

    Inventor： Tai-Hon P. Chang ,  Harry J. Mamin ,  Daniel Rugar

    IPC: G01N13/12 ,  G11B9/00 ,  G11B9/10 ,  H01J37/073 ,  H01J37/244 ,  H01J37/28

    CPC classification number: G11B9/10 ,  G11B9/1409 ,  H01J37/073 ,  H01J37/244 ,  H01J37/28 ,  B82Y10/00 ,  H01J2237/1205 ,  H01J2237/2441 ,  H01J2237/2447 ,  H01J2237/2448 ,  H01J2237/24592

    Abstract: An electron beam imaging system is described wherein a sharp-tip electron source is biased to produce an electron flow and a conductive target is placed in the path of the electron flow. A planar, electrostatic lens is positioned in the electron flow path and between the electron source and target. The lens includes an aperture; at least a first conductive plane that is biased less negative than the electron source; and one or more conductive planes separated by dielectric layers. A secondary electron detector is formed on the surface of the electrostatic lens that is closest to the conductive target, whereby the lens may be positioned close to the target and still not obstruct secondary electrons emitted from the target from impinging on the secondary electron detector.

    Abstract translation: 描述了一种电子束成像系统，其中尖端电子源被偏置以产生电子流，并且导电靶位于电子流的路径中。 平面静电透镜位于电子流动路径中，并位于电子源和靶之间。 透镜包括孔; 至少第一导电平面被偏压小于电子源的负值; 以及由电介质层分离的一个或多个导电平面。 在最靠近导电靶的静电透镜的表面上形成二次电子检测器，由此透镜可以靠近目标定位，并且不会阻碍从靶发射的二次电子撞击在二次电子检测器上。

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