-
公开(公告)号:US12098571B2
公开(公告)日:2024-09-24
申请号:US17321626
申请日:2021-05-17
申请人: CARVANA, LLC
摘要: Systems, methods, non-transitory processor-readable storage media, and devices of the various embodiments enable a vehicle vending machine to retrieve a vehicle from a storage location and deliver the vehicle to a delivery bay for delivery to a customer. Various embodiments may include a vehicle vending machine including a tower, a robotic carrier, a corridor extending from the tower, a plurality of delivery bays positioned along the corridor, a customer interaction kiosk, and/or a video system. In various embodiments, the vehicle vending machine may further include a lighting system.
-
公开(公告)号:US12095124B2
公开(公告)日:2024-09-17
申请号:US17938718
申请日:2022-10-07
发明人: David Weingaertner , Michael Gasda , Martin Perry
IPC分类号: H01M8/04089 , H01M8/04007 , H01M8/04082 , H01M8/0612 , H01M8/0668
CPC分类号: H01M8/04097 , H01M8/04074 , H01M8/04201 , H01M8/0618 , H01M8/0668
摘要: A fuel cell system includes at least one hot box including a fuel cell stack and producing an anode exhaust product, at least one hydrogen pump, at least one product conduit fluidly connecting an anode exhaust product outlet of the hot box to an inlet of the at least one hydrogen pump, a compressed hydrogen product conduit connected to a compressed hydrogen product outlet of the at least one hydrogen pump, and at least one effluent conduit connected to an unpumped effluent outlet of the at least one hydrogen pump. Additional embodiments include a fuel cell system in which the anode exhaust product stream is provided to at least one carbon dioxide pump to generate a compressed carbon dioxide product and an unpumped effluent that may be recycled to the at least one hot box of the fuel cell system. In various embodiments, the fuel cell system may use or recapture essentially all of the hydrogen content and nearly all of the carbon content of the input fuel that is provided to the fuel cell system.
-
公开(公告)号:US12094925B1
公开(公告)日:2024-09-17
申请号:US18229139
申请日:2023-08-01
发明人: Jen-Yuan Chang , Chien-Chang Lee , Chia-Ping Lai , Tzu-Chung Tsai
CPC分类号: H01L28/91 , H01L21/56 , H01L24/80 , H01L2224/80895 , H01L2224/80896
摘要: A three-dimensional device structure includes a first die including a first semiconductor substrate, a second die disposed on the first die and including a second semiconductor substrate, a dielectric encapsulation (DE) layer disposed on the first die and surrounding the second die, a redistribution layer structure disposed on the second die and the DE layer, and an integrated passive device (IPD) embedded in the DE layer and electrically connected to the first die and the redistribution layer structure.
-
14.
公开(公告)号:US12093404B2
公开(公告)日:2024-09-17
申请号:US17465358
申请日:2021-09-02
申请人: Curuvar, LLC
CPC分类号: G06F21/602 , H04L9/085 , H04L2209/463
摘要: In various embodiments a plurality of computing devices may perform methods for providing information security services for a communication network, including performing a consensus operation to determine whether a client device is authorized to request a document operation, wherein each computing device is assigned to one of a plurality of trust zones each including a number of computing devices less than or equal to a threshold number of computing devices, and performing the document operation for the client device in response to determining by the plurality of computing devices that consensus exists among the plurality of trust zones that the client device is authorized to request the document operation.
-
公开(公告)号:US12091759B2
公开(公告)日:2024-09-17
申请号:US17813143
申请日:2022-07-18
发明人: David Weingaertner
IPC分类号: C25B1/042
CPC分类号: C25B1/042
摘要: An electrolyzer system includes a stack of solid oxide electrolyzer cells configured receive steam and output a hydrogen exhaust and an oxygen exhaust, a supplemental steam generator configured to generate the steam provided to the stack by vaporizing water using heat extracted from the oxygen exhaust, a water preheater configured to preheat water using heat extracted from the oxygen exhaust, and a primary steam generator configured to generate the steam provided to the stack by vaporizing the water preheated by the water preheater.
-
公开(公告)号:US12080594B2
公开(公告)日:2024-09-03
申请号:US17872144
申请日:2022-07-25
发明人: Cheng-Lun Tsai , Huei-Wen Hsieh , Chun-Sheng Chen , Kai-Shiang Kuo , Jen-Wei Liu , Cheng-Hui Weng , Chun-Chieh Lin , Hung-Wen Su
IPC分类号: H01L21/768 , H01L23/532
CPC分类号: H01L21/76846 , H01L21/76862 , H01L21/76877 , H01L23/53238
摘要: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.
-
公开(公告)号:US12076706B2
公开(公告)日:2024-09-03
申请号:US17092290
申请日:2020-11-08
申请人: Molecule Works Inc.
发明人: Wei Liu , Anirudh Balram
IPC分类号: B01D46/00 , B01D17/02 , B01D53/04 , B01D53/26 , B01D53/62 , B01D53/72 , B01D69/14 , B01J20/28 , B01J35/50 , B01J35/61 , C02F1/469 , C02F101/10 , C02F101/34
CPC分类号: B01J20/28052 , B01D17/0202 , B01D46/0036 , B01D53/0407 , B01D53/261 , B01D53/62 , B01D53/72 , B01D69/147 , B01J20/28004 , B01J20/28016 , B01J20/28061 , B01J20/28064 , B01J20/28066 , B01J35/50 , B01J35/615 , B01J35/617 , B01J35/618 , C02F1/4691 , B01D2253/108 , B01D2257/504 , B01D2257/708 , B01D2257/80 , C02F2101/10 , C02F2101/34
摘要: A porous material structure and device are described and shown to enhance the mass transfer and/or heat transfer at low pressure drops for removal of certain molecular species from a fluid by adsorption and/or catalytic reaction. The porous structure of active materials comprising packed fine particles of adsorbents or catalysts is encapsulated with a thin membrane to provide large interfacing area with the fluid per unit volume for rapid mass transfer between the porous structure and fluid. The thin membrane also blocks particulate from getting into the porous structure of the active material. For the process involving significant heat of adsorption and/or reaction, the another surface of the porous structure of the active material is encapsulated with a thin non-permeable sheet to interface with a thermal fluid for rapid heat transfer between the porous structure and the thermal fluid. The device can be used for removal of CO2, moisture, and hydrocarbon molecules from a gas stream with rapid in-situ regeneration. The device can be used for removal of water from water-containing liquid fluids, such as solvents and oils. The device can be used for removal of bacteria, virus, salts, and molecular contaminants from one water simultaneously.
-
18.
公开(公告)号:US12075633B2
公开(公告)日:2024-08-27
申请号:US18317958
申请日:2023-05-16
发明人: Yong-Jie Wu , Yen-Chung Ho , Mauricio Manfrini , Chung-Te Lin , Pin-Cheng Hsu
CPC分类号: H10B63/34 , H01L29/66969 , H01L29/78642 , H01L29/7869 , H10B53/30 , H10B53/40 , H10B63/80 , H10N70/011 , H10N70/231 , H10N70/24
摘要: A device structure includes at least one selector device. Each selector device includes a vertical stack including, from bottom to top, a bottom electrode, a metal oxide semiconductor channel layer, and a top electrode and located over a substrate, a gate dielectric layer contacting sidewalls of the bottom electrode, the metal oxide semiconductor channel layer, and the top electrode, and a gate electrode formed within the gate dielectric layer and having a top surface that is coplanar with a top surface of the top electrode. Each top electrode or each bottom electrode of the at least one selector device may be contacted by a respective nonvolatile memory element to provide a one-selector one-resistor memory cell.
-
公开(公告)号:US12074845B2
公开(公告)日:2024-08-27
申请号:US18110172
申请日:2023-02-15
IPC分类号: H04L61/5014 , H04L12/66 , H04L47/70 , H04L61/00 , H04L101/618
CPC分类号: H04L61/5014 , H04L12/66 , H04L47/70 , H04L61/35 , H04L2101/618
摘要: Systems, methods, and devices for performing targeted filtering of network traffic generated by user equipment (UE) devices connected to a customer premise equipment (CPE) device in a communication system that includes a distributed residential gateway. A network server may determine that the communication system includes a UE device that is compromised, misconfigured, or operating outside normal communication parameters, identify the UE device, determine an Internet protocol (IP) address or a media access control (MAC) address of the identified UE device, generate a quarantine request message that includes the IP address or the MAC address of the identified UE device in response to determining that the preconfigured virtual local area network access control list (VACL) on the CPE lists source IP addresses from which the CPE will filter outbound traffic, and send the generated quarantine request message to a bridged residential gateway (BRG) associated with the CPE device.
-
20.
公开(公告)号:US12074219B2
公开(公告)日:2024-08-27
申请号:US17523076
申请日:2021-11-10
发明人: Yong-Jie Wu , Yen-Chung Ho , Hui-Hsien Wei , Chia-Jung Yu , Pin-Cheng Hsu , Feng-Cheng Yang , Chung-Te Lin
IPC分类号: H01L29/786 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/49
CPC分类号: H01L29/786 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/4908
摘要: A disclosed semiconductor device includes a substrate, a gate electrode formed on the substrate, a gate dielectric layer formed over the gate electrode, a source electrode located adjacent to a first side of the gate electrode, and a drain electrode located adjacent to a second side of the gate electrode. A gate dielectric formed from an etch-stop layer and/or high-k dielectric layer separates the source electrode from the gate electrode and substrate and separates the drain electrode from the gate electrode and the substrate. First and second oxide layers are formed over the gate dielectric and are located adjacent to the source electrode on the first side of the gate electrode and located adjacent to the drain electrode on the second side of the gate electrode. A semiconductor layer is formed over the first oxide layer, the second oxide layer, the source electrode, the drain electrode, and the gate dielectric.
-
-
-
-
-
-
-
-
-