公开(公告)号：US06911913B2

公开(公告)日：2005-06-28

申请号：US10261086

申请日：2002-09-30

Applicant: Jungsang Kim ,  Anatoli Olkhovets ,  Alex T. Tran

Inventor： Jungsang Kim ,  Anatoli Olkhovets ,  Alex T. Tran

IPC: G02B6/35 ,  G02B26/08 ,  G08B17/06

CPC classification number: G02B26/0841 ,  G02B6/3518 ,  G02B6/357 ,  G02B6/3578 ,  G02B6/359

Abstract: An integrated piezo-resistive sensor for determining mirror position in an optical switch. One or more piezo-resistive layers may be formed in silicon springs supporting a movable mirror in the switch. Change in resistivity of those layers due to spring deformation during mirror motion is measured and related to the mirror deflection angle. Information about the angle may be used to provide feedback to the motion actuator, which then may be operated to orient the mirror more accurately. A sensor's sensitivity may be increased by appropriately orienting the springs with respect to the crystallographic axes of the silicon.

Abstract translation: 一种用于确定光开关中镜面位置的集成压电传感器。 一个或多个压电层可以形成在支撑开关中的可移动反射镜的硅弹簧中。 测量由于反射镜运动期间的弹簧变形引起的那些层的电阻率的变化，并且与镜面偏转角有关。 可以使用关于角度的信息来向运动致动器提供反馈，然后可以对运动致动器进行操作以更准确地定向镜子。 可以通过相对于硅的结晶轴适当地定向弹簧来增加传感器的灵敏度。

公开(公告)号：US6054335A

公开(公告)日：2000-04-25

申请号：US209866

申请日：1998-12-11

Applicant: Decai Sun ,  Ross D. Bringans ,  Christopher L. Chua ,  Philip D. Floyd ,  Eric Peeters ,  Joel A. Kubby ,  Alex T. Tran

Inventor： Decai Sun ,  Ross D. Bringans ,  Christopher L. Chua ,  Philip D. Floyd ,  Eric Peeters ,  Joel A. Kubby ,  Alex T. Tran

IPC: B81B3/00 ,  B81B7/02 ,  H01L27/15 ,  H01S5/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/026 ,  H01S5/042 ,  H01S5/183 ,  H01S5/42 ,  H01L21/00

CPC classification number: H01S5/18308 ,  H01S5/02288 ,  H01L27/15 ,  H01S5/021 ,  H01S5/02252 ,  H01S5/4087 ,  H01S5/423 ,  H01S5/426

Abstract: A III-V compound light emitter is integrated with Si-based actuators. The Proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser. Electro or magnetic based actuation from Si-based actuators provides linear or angular movement of the light emitter.

Abstract translation: III-V复合光发射器与Si基致动器集成。 提出的器件利用了III-V化合物的优异光学性能和Si的优异机械性能，以及Si-Micro-Electro-Mechanical Systems（MEMS）的成熟制造技术。 发射极可以是发光二极管（LED），垂直腔表面发射激光器（VCSEL）或边缘发射激光器。 基于Si的致动器的基于电或磁的致动器提供光发射器的线性或角度运动。

公开(公告)号：US06987898B2

公开(公告)日：2006-01-17

申请号：US10625384

申请日：2003-07-23

Applicant: Alex T. Tran ,  Dustin W. Carr

Inventor： Alex T. Tran ,  Dustin W. Carr

IPC: G02B6/00

CPC classification number: G01N33/54373 ,  G02B6/3502 ,  G02B6/3566

Abstract: The invention relates to devices and methods for detecting a ligand in a liquid, based on deflection of one or more microscopic cantilevers. Each cantilever has an optical waveguide fixed thereto or integral therewith. Deflection of the cantilever is detected by assessing coupling of light between the optical waveguide on the cantilever and an optical waveguide fixed distally thereto.

Abstract translation: 本发明涉及用于检测液体中配体的装置和方法，其基于一个或多个微观悬臂的偏转。 每个悬臂具有固定到其上的或与其成一体的光波导。 通过评估悬臂梁上的光波导与远端固定的光波导之间的光耦合来检测悬臂的偏转。

公开(公告)号：US06479315B1

公开(公告)日：2002-11-12

申请号：US09724514

申请日：2000-11-27

Applicant: Andrew J. Zosel ,  Peter M. Gulvin ,  Jingkuang Chen ,  Joel A. Kubby ,  Chuang-Chia Lin ,  Alex T. Tran

Inventor： Andrew J. Zosel ,  Peter M. Gulvin ,  Jingkuang Chen ,  Joel A. Kubby ,  Chuang-Chia Lin ,  Alex T. Tran

IPC: H01L2100

CPC classification number: B81C1/00666 ,  B81B2203/058 ,  B81C2201/014 ,  B81C2201/0164 ,  B81C2201/056 ,  G02B26/0833

Abstract: The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilicon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.

Abstract translation: 本发明提供一种微机械或微机电结构。 该结构通过包括在衬底层上限定由绝缘体层分离的单晶硅层上的结构的方法制造; 沉积和蚀刻单晶硅层上的多晶硅层，剩余的多晶硅形成结构的机械或光学元件; 暴露单晶硅层的选定区域; 并释放形成的结构。

公开(公告)号：US06413793B1

公开(公告)日：2002-07-02

申请号：US09858469

申请日：2001-05-17

Applicant: Chuang-Chia Lin ,  Peter M. Gulvin ,  Alex T. Tran ,  Nena Liakopoulos

Inventor： Chuang-Chia Lin ,  Peter M. Gulvin ,  Alex T. Tran ,  Nena Liakopoulos

IPC: H01L2100

CPC classification number: B81B3/001

Abstract: A semiconductor structure includes a substrate, a sacrificial layer formed on or over the substrate, and a structural layer formed on or over the sacrificial layer. At least one opening is formed in the structural layer. At least one opening is formed in the sacrificial layer below the at least one opening in the structural layer. The at least one opening in the structural layer and the at least one opening in the sacrificial layer are at least partially filled with a filler material. At least one portion of the structural layer is removed to define at least one microstructure. The sacrificial layer is removed such that the at least one microstructure is released from the substrate and the filler material forms one or more protrusions on the at least one microstructure, and/or one or more anchors anchoring the at least one microstructure to the substrate.

Abstract translation: 半导体结构包括衬底，形成在衬底上或衬底上的牺牲层以及形成在牺牲层上或之上的结构层。 在结构层中形成至少一个开口。 在结构层中的至少一个开口下方的牺牲层中形成至少一个开口。 结构层中的至少一个开口和牺牲层中的至少一个开口至少部分地填充有填充材料。 去除结构层的至少一部分以限定至少一个微结构。 去除牺牲层，使得至少一个微结构从衬底释放并且填充材料在至少一个微结构上形成一个或多个突起，和/或一个或多个将至少一个微结构锚定到衬底的锚固件。

公开(公告)号：US06257739B1

公开(公告)日：2001-07-10

申请号：US09193522

申请日：1998-11-17

Applicant: Decai Sun ,  Alex T. Tran

Inventor： Decai Sun ,  Alex T. Tran

IPC: F21V21008

CPC classification number: H01S5/02252 ,  H01L27/15 ,  H01S5/183 ,  H01S5/423

Abstract: A micromachined movable shuttle is constructed in III-V material to allow in situ placement of VCSELs on the shuttle for a solid state image scanner in optical display and printing applications. A comb drive is used to actuate the shuttle for scanning purposes. Hundreds of VCSELs may be fabricated on a large movable shuttle.

Abstract translation: 微型加工的可移动梭子以III-V材料构造，以允许在光学显示和打印应用中将VCSEL原位放置在梭子上用于固态图像扫描仪。 梳齿驱动器用于驱动梭子进行扫描。 数百个VCSEL可以在大型可移动穿梭上制造。

公开(公告)号：US06661070B2

公开(公告)日：2003-12-09

申请号：US10193804

申请日：2002-07-11

Applicant: Andrew J. Zosel ,  Joel A. Kubby ,  Peter M. Gulvin ,  Chuang-Chia Lin ,  Jingkuang Chen ,  Alex T. Tran

Inventor： Andrew J. Zosel ,  Joel A. Kubby ,  Peter M. Gulvin ,  Chuang-Chia Lin ,  Jingkuang Chen ,  Alex T. Tran

IPC: H01L2982

CPC classification number: B81C1/00666 ,  B81B2203/058 ,  B81C2201/014 ,  B81C2201/0164 ,  B81C2201/056 ,  G02B26/0833

Abstract: The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.

公开(公告)号：US06379989B1

公开(公告)日：2002-04-30

申请号：US09468141

申请日：1999-12-21

Applicant: Joel A. Kubby ,  Jingkuang Chen ,  Alex T. Tran

Inventor： Joel A. Kubby ,  Jingkuang Chen ,  Alex T. Tran

IPC: H01L2100

CPC classification number: G02B6/43 ,  G02B6/4214

Abstract: A microoptomechanical structure produced by defining a microoptical structure in a single-crystal silicon layer separated by an insulator layer from a handle wafer, such as a SOI wafer, selectively etching the single crystal silicon layer, depositing a sacrificial oxide layer on the etched single crystal silicon layer, depositing and etching a polysilicon layer on the sacrificial oxide layer, with remaining polysilcon forming hinge elements, and releasing formed microoptical structures. Embodiments use an oxide as an insulator, and other embodiments provide for wafer bonding of the silicon layer to the insulator layer.

Abstract translation: 通过在由诸如SOI晶片的处理晶片分离的绝缘体层的单晶硅层中限定微光学结构而产生的微机电结构，选择性地蚀刻单晶硅层，在蚀刻的单晶上沉积牺牲氧化物层 硅层，沉积和蚀刻牺牲氧化物层上的多晶硅层，形成铰链元件，并释放形成的微光学结构。 实施例使用氧化物作为绝缘体，并且其它实施例提供硅层与绝缘体层的晶片结合。

公开(公告)号：US06295130B1

公开(公告)日：2001-09-25

申请号：US09469892

申请日：1999-12-22

Applicant: Decai Sun ,  Joel A. Kubby ,  Alex T. Tran ,  Eric Peeters

Inventor： Decai Sun ,  Joel A. Kubby ,  Alex T. Tran ,  Eric Peeters

IPC: G01B902

CPC classification number: G01J3/26

Abstract: A microelectromechanically tunable Fabry-Perot spectrophotometer is provided for color sensing. Optical fiber provides light input to a Fabry-Perot filter which is adjusted by a switched capacitor circuit. Spectral intensity is sensed by an integrated photodetector.

Abstract translation: 提供微机电可调法布里 - 珀罗分光光度计，用于色彩检测。 光纤向法布里 - 珀罗滤波器提供光输入，该滤波器由开关电容电路调节。 光谱强度由集成光电检测器检测。