公开(公告)号：US20060141399A1

公开(公告)日：2006-06-29

申请号：US11025538

申请日：2004-12-29

Applicant: Ching-Yu Chang ,  Burn Lin ,  Chi-Wen Liu

Inventor： Ching-Yu Chang ,  Burn Lin ,  Chi-Wen Liu

IPC: G03F7/00

CPC classification number: G03F7/322

Abstract: A method of creating a resist image on a semiconductor substrate includes exposing a layer of photoresist on the semiconductor substrate and developing the exposed layer of photoresist using a first fluid including supercritical carbon dioxide and a base such as Tetra-Methyl Ammonium Hydroxide (TMAH). Additionally, the developed photoresist can be cleaned using a second fluid including supercritical carbon dioxide and a solvent such as methanol, ethanol, isopropanol, and xylene.

公开(公告)号：US20050253090A1

公开(公告)日：2005-11-17

申请号：US10844178

申请日：2004-05-12

Applicant: Tsai Gau ,  Chun-Kuang Chen ,  Ru-Gun Liu ,  Burn Lin

Inventor： Tsai Gau ,  Chun-Kuang Chen ,  Ru-Gun Liu ,  Burn Lin

IPC: G03F7/20

CPC classification number: G03F7/70341

Abstract: An immersion lithography system for semiconductor manufacturing provides a lens assembly that moves relative to a wafer surface and includes a nozzle and drain assembly that is coupled to, and moves along, the lens assembly. The nozzle and drain assemblies may be disposed circumferentially opposite each other about the lens or an annular ring may be provided that surrounds the lens and includes a plurality of selectable alternating nozzles and drains. The nozzle and drain assemblies may rotatably surround the lens. At least a portion of the wafer being patterned is immersed in a liquid provided by the nozzle assembly and a flow direction is controlled by manipulating the nozzle and drain assemblies. Flow direction may be advantageously directed outwardly to reduce particulate contamination.

Abstract translation: 用于半导体制造的浸没式光刻系统提供了相对于晶片表面移动的透镜组件，并且包括联接到透镜组件并沿着透镜组件移动的喷嘴和排出组件。 喷嘴和排出组件可以围绕透镜周向地相对设置，或者可以设置围绕透镜的环形环，并且包括多个可选择的交替喷嘴和排水沟。 喷嘴和排出组件可旋转地围绕透镜。 将被图案化的晶片的至少一部分浸入由喷嘴组件提供的液体中，并且通过操纵喷嘴和排出组件来控制流动方向。 可以有利地向外指向流动方向以减少颗粒污染。

公开(公告)号：US06737473B2

公开(公告)日：2004-05-18

申请号：US09905664

申请日：2001-07-13

Applicant: Michael Gene Altes ,  Craig Steven Gross ,  Lee Bowen Jensen ,  Shaow Burn Lin ,  Anil Kumar Saxena ,  Todd Matthew Starke ,  Toshio Suzuki ,  Raymond Lee Tabler

Inventor： Michael Gene Altes ,  Craig Steven Gross ,  Lee Bowen Jensen ,  Shaow Burn Lin ,  Anil Kumar Saxena ,  Todd Matthew Starke ,  Toshio Suzuki ,  Raymond Lee Tabler

IPC: C08J100

CPC classification number: C08J3/03

Abstract: Water-continuous emulsion of elastomeric polymers are disclosed having a solids content of greater than 75%, an average particle size less than 5 &mgr;m, and having sufficient stability to produce a stable lower solids emulsion upon dilution with water comprising; an elastomeric polymer, surfactant, water, optional plasticizer, optional low molecular weight acid, and is essentially free of organic solvents. The water-continuous emulsions of elastomeric polymers can be prepared by; (I) forming a premix that is essentially free of organic solvents comprising an elastomeric polymer and surfactant, and optionally a plasticizer and low molecular weight acid, and (II) adding water to the premix with mixing to form a water continuous emulsion of the elastomeric polymer having a solids content of greater than 75%, an average particle size less than 5 &mgr;m, and having sufficient stability to produce a stable lower solids emulsion upon dilution with water.

Abstract translation: 公开了弹性体聚合物的水连续乳液，其固体含量大于75％，平均粒度小于5μm，并且在用水稀释时具有足够的稳定性以产生稳定的低固体乳剂; 弹性体聚合物，表面活性剂，水，任选的增塑剂，任选的低分子量酸，并且基本上不含有机溶剂。 弹性聚合物的水连续乳液可以通过以下步骤制备： （I）形成基本上不含有弹性体聚合物和表面活性剂以及任选的增塑剂和低分子量酸的有机溶剂的预混物，和（II）将混合的水加入到预混合物中以形成弹性体的水连续乳液 固体含量大于75％的聚合物，平均粒度小于5μm，并且在用水稀释时具有足够的稳定性以产生稳定的低固体乳剂。

公开(公告)号：US20060148109A1

公开(公告)日：2006-07-06

申请号：US11029992

申请日：2005-01-05

Applicant: Chin-Hsiang Lin ,  Burn Lin ,  Tsai-Sheng Gau

Inventor： Chin-Hsiang Lin ,  Burn Lin ,  Tsai-Sheng Gau

IPC: H01L21/00 ,  G06K9/00

CPC classification number: G03F7/7065 ,  G03F7/70383 ,  H01L22/22 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of wafer repairing comprises identifying locations and patterns of defective regions in a semiconductor wafer; communicating the locations and patterns of defective regions to a direct-writing tool; forming a photoresist layer on the semiconductor wafer; locally exposing the photoresist layer within the defective regions using an energy beam; developing the photoresist layer on the semiconductor wafer; and wafer-processing the semiconductor wafer under the photoresist layer after exposing and developing.

Abstract translation: 晶片修复的方法包括识别半导体晶片中的缺陷区域的位置和图案; 将缺陷区域的位置和图案传送到直写工具; 在半导体晶片上形成光致抗蚀剂层; 使用能量束将缺陷区域内的光致抗蚀剂层局部曝光; 在半导体晶片上显影光致抗蚀剂层; 并在曝光和显影之后将光致抗蚀剂层下方的半导体晶片进行晶片处理。

公开(公告)号：US20060139603A1

公开(公告)日：2006-06-29

申请号：US11317974

申请日：2005-12-23

Applicant: Burn Lin

Inventor： Burn Lin

IPC: G03B27/54

CPC classification number: G03F7/70275 ,  G03F7/70208 ,  G03F7/70283

Abstract: An exposure system includes a mask stage module adapted for holding a first mask and a second mask, wherein the first mask is configured for illumination by a first beam to form a transformed first beam having a first pattern from the first mask and the second mask is configured for illumination by a second beam to form a transformed second beam having a second pattern from the second mask. The exposure system also includes a beam combiner configured to combine the transformed first and second beams to form a resultant beam, wherein the resultant beam is projected into a substrate coated with a photoresist layer.

Abstract translation: 曝光系统包括适于保持第一掩模和第二掩模的掩模台模块，其中第一掩模被配置为由第一光束照明以形成具有来自第一掩模的第一图案的变换的第一光束，而第二掩模是 被配置为由第二光束照明以形成具有来自第二掩模的第二图案的变换的第二光束。 曝光系统还包括光束组合器，其被配置为组合变换的第一和第二光束以形成合成光束，其中所得到的光束投射到涂覆有光致抗蚀剂层的基板中。

公开(公告)号：US20060083997A1

公开(公告)日：2006-04-20

申请号：US11248070

申请日：2005-10-12

Applicant: Burn Lin ,  Jeng-Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih ,  Hua-Tai Lin ,  Hung Hsieh

Inventor： Burn Lin ,  Jeng-Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih ,  Hua-Tai Lin ,  Hung Hsieh

IPC: A47G1/12 ,  G03F1/14 ,  G03F1/00

CPC classification number: G03F1/38

Abstract: Disclosed is a photomask comprising a transparent substrate, an absorption layer proximate to the transparent substrate, and a pellicle mounted proximate to the transparent substrate. The absorption layer has at least one opening formed therein for receiving a wavelength-reducing material (WRM). The wavelength-reducing material and the absorption layer form a generally planar surface.

Abstract translation: 公开了一种光掩模，其包括透明基板，靠近透明基板的吸收层和靠近透明基板安装的防护薄膜组件。 吸收层具有形成在其中的至少一个开口用于接收波长减小材料（WRM）。 波长减小材料和吸收层形成大致平坦的表面。

公开(公告)号：US20050164098A1

公开(公告)日：2005-07-28

申请号：US10765531

申请日：2004-01-27

Applicant: Burn Lin ,  Ping Yang ,  Hong Hsieh ,  Yao Ku ,  Chin-Hsiang Lin ,  Chiu Yoo

Inventor： Burn Lin ,  Ping Yang ,  Hong Hsieh ,  Yao Ku ,  Chin-Hsiang Lin ,  Chiu Yoo

IPC: G03C5/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/00

CPC classification number: G03F7/70425 ,  G03F1/72 ,  G03F1/76 ,  G03F1/84 ,  G03F7/70383 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7046 ,  G03F9/7049

Abstract: A method and system is disclosed for processing one or more oblique features on a mask or reticle substrate. After aligning the mask or reticle substrate with a predetermined reference system, an offset angle of a feature to be processed on the mask or reticle substrate with regard to either the horizontal or vertical reference direction of the predetermined reference system is determined. The mask or reticle substrate is rotated in a predetermined direction by the offset angle; and the feature on the mask or reticle substrate is processed using the predetermined reference system wherein the feature is processed in either the horizontal or vertical reference direction thereof.

Abstract translation: 公开了一种用于处理掩模或掩模版基板上的一个或多个倾斜特征的方法和系统。 在掩模或掩模版基板与预定的参考系统对准之后，确定相对于预定参考系的水平或垂直参考方向在掩模或掩模版基板上要处理的特征的偏移角。 掩模或掩模版基板沿预定方向旋转偏移角; 并且使用预定的参考系统处理掩模或掩模版基板上的特征，其中特征在水平或垂直参考方向上被处理。

公开(公告)号：US20050012914A1

公开(公告)日：2005-01-20

申请号：US10918863

申请日：2004-08-16

Applicant: Burn Lin

Inventor： Burn Lin

IPC: G03F7/20 ,  G03F9/00 ,  G03B27/42

CPC classification number: G03F7/70283 ,  G03F7/70358 ,  G03F7/70466 ,  G03F9/7076

Abstract: A new optical lithographic exposure apparatus is described. The apparatus may comprise, for example, a lithographic stepper or scanner. A wafer stage comprises a means of supporting a semiconductor wafer. A mask stage comprises a means of holding a first mask and a second mask and maintaining a fixed relative position between the first mask and the second mask. The mask stage may further comprise an independent means of aligning each mask. A light source comprises a means to selectively shine actinic light through one of the first mask and the second mask. An imaging lens is capable of focusing the actinic light onto the semiconductor wafer. A step and scan method using the mask stage is provided. A first mask and a second mask are loaded into a mask stage of an optical lithographic exposure apparatus. The first mask and the second mask are aligned. The first mask is scanned. The wafer is then stepped. The second mask is scanned. By repeating this sequence across the wafer twice, the patterns of the first mask and the second mask are thereby superimposed in every field. The photoresist layer is developed to thereby create the patterning in the manufacture of the integrated circuit device.

Abstract translation: 描述了一种新的光刻曝光设备。 该装置可以包括例如光刻步进器或扫描器。 晶片台包括支撑半导体晶片的装置。 掩模台包括保持第一掩模和第二掩模并保持第一掩模和第二掩模之间的固定相对位置的装置。 掩模台还可以包括对准每个掩模的独立装置。 光源包括选择性地通过第一掩模和第二掩模之一照射光化光的装置。 成像透镜能够将光化学光聚焦到半导体晶片上。 提供了使用掩模阶段的步骤和扫描方法。 第一掩模和第二掩模被加载到光刻曝光设备的掩模级中。 第一个掩模和第二个掩模对齐。 第一个掩模被扫描。 然后将晶片加工成台阶。 第二个面罩被扫描。 通过跨晶片重复该序列两次，因此第一掩模和第二掩模的图案在每个场中叠加。 显影光致抗蚀剂层，从而在集成电路器件的制造中形成图案化。

公开(公告)号：US08012387B2

公开(公告)日：2011-09-06

申请号：US12339154

申请日：2008-12-19

Applicant: Shaow Burn Lin

Inventor： Shaow Burn Lin

IPC: B01J13/02 ,  C08G77/00

CPC classification number: B01J13/02 ,  A61K8/11 ,  A61K8/14 ,  A61K8/671 ,  A61K8/894 ,  A61K2800/412 ,  A61Q19/00 ,  C11D3/373

Abstract: A process for preparing a vesicle composition based upon mixing an organopolysiloxane having at least one hydrophilic substituent group, a water miscible solvent, and water is disclosed. The vesicle compositions produced by the method are useful in various personal, household, and health care applications.

Abstract translation: 公开了一种基于混合具有至少一个亲水性取代基的有机聚硅氧烷，水混溶性溶剂和水来制备囊泡组合物的方法。 通过该方法生产的囊泡组合物可用于各种个人，家庭和医疗保健应用。

公开(公告)号：US20100209367A1

公开(公告)日：2010-08-19

申请号：US12680061

申请日：2008-09-18

Applicant: Shaow Burn Lin ,  Jason Humphrey

Inventor： Shaow Burn Lin ,  Jason Humphrey

IPC: A61K8/89 ,  A61Q17/04

CPC classification number: A61K8/895 ,  A61K8/042 ,  A61K8/06 ,  A61Q17/04 ,  A61Q19/00 ,  C08L83/04 ,  C09D183/04 ,  C08L83/00

Abstract: Aqueous emulsions are disclosed of a gel or gel paste containing a silicone elastomer from the reaction an organohydrogensiloxane having at least two SiH containing cyclosiloxane rings in its molecule and a compound having at least two aliphatic unsaturated groups in its molecule.

Abstract translation: 本发明公开了含有硅氧烷弹性体的凝胶或凝胶糊，其分子中具有至少两个含有SiH的环硅氧烷环的有机氢硅氧烷和在其分子中具有至少两个脂族不饱和基团的化合物的反应。