公开(公告)号：US20100085730A1

公开(公告)日：2010-04-08

申请号：US12247107

申请日：2008-10-07

申请人： Kimble J. Chen ,  Shyh Tah Chern ,  Shao-Yu Lu ,  Chi-Wen Kuo ,  Sung-Chi Chang ,  Jui-Wei Hsu ,  Yu-Ku Chuang

发明人： Kimble J. Chen ,  Shyh Tah Chern ,  Shao-Yu Lu ,  Chi-Wen Kuo ,  Sung-Chi Chang ,  Jui-Wei Hsu ,  Yu-Ku Chuang

IPC分类号： F21V33/00

CPC分类号： F21V29/773 ,  B23Q17/2404 ,  F21V5/002 ,  F21V5/04 ,  F21V13/04 ,  F21V29/713 ,  F21V29/74 ,  F21V29/75 ,  F21W2131/403 ,  F21Y2115/10

摘要： An illuminating device for machining tools is disclosed. A machining tool is installed with an illuminating device that uses a single LED prepared using the multi chip single module technique to provide high-power light. This elongates the lifetime of the illuminating device and has the advantages of power-saving and low temperature. The light thus produced does not have UV and IR components. In addition to no radiation injury to human bodies, the invention also avoids overlapped shadows in the case of multiple LED sources. Such a design of the cold and single light source can effectively bad influences on the precision of objects 31 being processed.

摘要翻译： 公开了一种用于加工工具的照明装置。 安装了一种加工工具，该照明装置使用使用多芯片单模技术制备的单个LED来提供高功率光。 这延长了照明装置的使用寿命，具有省电低温的优点。 由此产生的光不具有UV和IR成分。 除了对人体没有辐射伤害之外，本发明还避免了在多个LED源的情况下重叠的阴影。 冷光单光源的这种设计可以对被处理物体31的精度产生有害的影响。

公开(公告)号：US20130048945A1

公开(公告)日：2013-02-28

申请号：US13590474

申请日：2012-08-21

申请人： Kuo-Lung Fang ,  Chi-Wen Kuo ,  Jun-Rong Chen ,  Chih-Hao Yang

发明人： Kuo-Lung Fang ,  Chi-Wen Kuo ,  Jun-Rong Chen ,  Chih-Hao Yang

IPC分类号： H01L33/20 ,  H01L33/06

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/08 ,  H01L33/50 ,  H01L33/505

摘要： A method for fabricating a light-emitting device is provided. The method includes: providing a substrate; forming a sacrificial dielectric layer on the substrate, wherein the sacrificial dielectric layer is a structure containing voids; forming a buffer layer on the sacrificial dielectric layer; forming an epitaxial light-emitting structure on the buffer layer; forming a metal bonding layer on the epitaxial light-emitting structure; bonding the metal bonding layer to a thermally conductive substrate; and wet etching the sacrificial dielectric layer for to remove the substrate.

摘要翻译： 提供一种制造发光器件的方法。 该方法包括：提供衬底; 在所述衬底上形成牺牲电介质层，其中所述牺牲绝缘层是包含空隙的结构; 在所述牺牲介电层上形成缓冲层; 在缓冲层上形成外延发光结构; 在外延发光结构上形成金属结合层; 将金属粘结层粘合到导热基板上; 并湿蚀刻牺牲介电层以去除衬底。

公开(公告)号：US20120168768A1

公开(公告)日：2012-07-05

申请号：US13340294

申请日：2011-12-29

申请人： Kuo-Lung FANG ,  Chi-Wen KUO ,  Cheng-Ta KUO

发明人： Kuo-Lung FANG ,  Chi-Wen KUO ,  Cheng-Ta KUO

IPC分类号： H01L33/02

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02658 ,  H01L33/12 ,  H01S5/0213 ,  H01S5/2063 ,  H01S5/32341

摘要： A semiconductor structure is provided. The semiconductor structure includes: a substrate; one or more semiconductor device layers formed on the substrate; and one or more lattice breaking areas formed on the surface of the substrate between the semiconductor device layers. The invention also provides a method for fabricating a semiconductor structure.

摘要翻译： 提供半导体结构。 半导体结构包括：基板; 形成在所述基板上的一个或多个半导体器件层; 以及形成在半导体器件层之间的衬底表面上的一个或多个晶格断裂区域。 本发明还提供一种制造半导体结构的方法。

公开(公告)号：US20120153339A1

公开(公告)日：2012-06-21

申请号：US13050677

申请日：2011-03-17

申请人： JUN-RONG CHEN ,  CHI-WEN KUO ,  KUN-FU HUANG ,  JUI-YI CHU ,  KUO-LUNG FANG

发明人： JUN-RONG CHEN ,  CHI-WEN KUO ,  KUN-FU HUANG ,  JUI-YI CHU ,  KUO-LUNG FANG

IPC分类号： H01L33/36 ,  H01L33/20

CPC分类号： H01L33/20 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/382 ,  H01L33/387

摘要： A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.

摘要翻译： 提供了包括导电基板，半导体堆叠层和图案化晶种层的发光二极管芯片结构。 导电基板具有表面。 表面具有交替地分布在表面上的第一区域和第二区域。 半导体层叠层设置在导电性基板上，导电性基板的表面面向半导体层叠层。 图案化晶种层设置在导电基板的表面的第一区域上，并且在导电基板和半导体堆叠层之间。 图案化晶种层将半导体层叠层与第一区域分开。 半导体堆叠层覆盖图案化晶种层和第二区域，并且通过第二区域电连接到导电基板。 还提供了发光二极管芯片结构的制造方法。

公开(公告)号：US07833809B2

公开(公告)日：2010-11-16

申请号：US12117746

申请日：2008-05-09

申请人： Cheng-Huang Kuo ,  Wei-Chih Lai ,  Chi-Wen Kuo

发明人： Cheng-Huang Kuo ,  Wei-Chih Lai ,  Chi-Wen Kuo

IPC分类号： H01L21/00

CPC分类号： H01L33/12 ,  H01L33/007

摘要： A light emitting diode structure including a substrate, a strain-reducing seed layer, an epitaxial layer, a first electrode and a second electrode is provided. The strain-reducing seed layer having a plurality of clusters is disposed on the substrate, and the material of the clusters is selected from a group consisting of aluminum nitride, magnesium nitride and indium nitride. The epitaxial layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The first electrode is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The second electrode is disposed on the second type doped semiconductor layer and electrically connected thereto.

摘要翻译： 提供了包括基板，应变降低种子层，外延层，第一电极和第二电极的发光二极管结构。 具有多个簇的应变减少种子层设置在基板上，并且簇的材料选自氮化铝，氮化镁和氮化铟。 外延层包括第一掺杂半导体层，发光层和第二掺杂半导体层。 第一电极设置在暴露的第一型掺杂半导体层上并与其电连接。 第二电极设置在第二类型掺杂半导体层上并与其电连接。

公开(公告)号：US20080315226A1

公开(公告)日：2008-12-25

申请号：US12117746

申请日：2008-05-09

申请人： Cheng-Huang Kuo ,  Wei-Chih Lai ,  Chi-Wen Kuo

发明人： Cheng-Huang Kuo ,  Wei-Chih Lai ,  Chi-Wen Kuo

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/12 ,  H01L33/007

摘要： A light emitting diode structure including a substrate, a strain-reducing seed layer, an epitaxial layer, a first electrode and a second electrode is provided. The strain-reducing seed layer having a plurality of clusters is disposed on the substrate, and the material of the clusters is selected from a group consisting of aluminum nitride, magnesium nitride and indium nitride. The epitaxial layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The first electrode is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The second electrode is disposed on the second type doped semiconductor layer and electrically connected thereto.

摘要翻译： 提供了包括基板，应变降低种子层，外延层，第一电极和第二电极的发光二极管结构。 具有多个簇的应变减少种子层设置在基板上，并且簇的材料选自氮化铝，氮化镁和氮化铟。 外延层包括第一掺杂半导体层，发光层和第二掺杂半导体层。 第一电极设置在暴露的第一型掺杂半导体层上并与其电连接。 第二电极设置在第二类型掺杂半导体层上并与其电连接。

公开(公告)号：US20200307161A1

公开(公告)日：2020-10-01

申请号：US16831054

申请日：2020-03-26

申请人： Chi-Wen KUO

发明人： Chi-Wen KUO

IPC分类号： B32B15/14 ,  D03D25/00 ,  D04H13/00 ,  B32B27/20 ,  B32B5/02 ,  B32B37/02 ,  B32B5/08 ,  B32B5/30 ,  B32B7/12 ,  B32B27/12 ,  B32B37/16

摘要： A conductive textile according to the invention includes a fabric, a wire conductor and a metal sheet. The wire conductor is integrated with the fabric, and has a connection end. The metal sheet has a main body and a bent portion. The bent portion extends from the main body and is bent downward. The leading edge of the bent portion is flat or jagged. The metal sheet is pressed against an upper surface of the fabric and placed on the connection end. The main body is welded together with the connection end of the wire conductor by a welding process. The main body serves as a bonding pad.

公开(公告)号：US20130062657A1

公开(公告)日：2013-03-14

申请号：US13614090

申请日：2012-09-13

申请人： Kuo-Lung Fang ,  Jui-Yi Chu ,  Jun-Rong Chen ,  Chi-Wen Kuo

发明人： Kuo-Lung Fang ,  Jui-Yi Chu ,  Jun-Rong Chen ,  Chi-Wen Kuo

IPC分类号： H01L33/62

CPC分类号： H01L33/145 ,  H01L33/382 ,  H01L2933/0016

摘要： A light-emitting diode structure is disclosed. A substrate has a first semiconductor layer, a light-emitting layer and a second semiconductor layer formed thereon. The first and second semiconductor layers are of opposite conductivity types. A first contact electrode is disposed between the first semiconductor layer and the substrate, and has a protruding portion extending into the second semiconductor layer. A barrier layer is conformally formed on the first contact electrode and exposes a top surface of the protruding portion. A current blocking member is disposed on the barrier layer and around at least a sidewall of the protruding portion. A second contact electrode is disposed between the first semiconductor layer and the first contact electrode, and in direct contact with the first semiconductor layer, wherein the second contact electrode is electrically insulated from the first contact electrode by the barrier layer.

摘要翻译： 公开了一种发光二极管结构。 基板具有形成在其上的第一半导体层，发光层和第二半导体层。 第一和第二半导体层具有相反的导电类型。 第一接触电极设置在第一半导体层和基板之间，并且具有延伸到第二半导体层中的突出部分。 阻挡层在第一接触电极上共形地形成并暴露突出部分的顶表面。 电流阻挡构件设置在阻挡层上并且至少围绕突出部分的侧壁。 第二接触电极设置在第一半导体层和第一接触电极之间，并且与第一半导体层直接接触，其中第二接触电极通过阻挡层与第一接触电极电绝缘。