公开(公告)号：US07892712B2

公开(公告)日：2011-02-22

申请号：US12125074

申请日：2008-05-22

Applicant: Chiang-Lin Shih ,  Feng-Yi Chen ,  Kuo-Yao Cho

Inventor： Chiang-Lin Shih ,  Feng-Yi Chen ,  Kuo-Yao Cho

IPC: G03F9/00 ,  G03C5/00

CPC classification number: G03F7/7085 ,  F15B2211/20515 ,  G03F7/70516 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7019 ,  G03F9/7046 ,  G03F9/7088

Abstract: An exposure method suitable for a photolithography process is described. First, a wafer with a group of alignment marks formed thereon is provided. A first alignment step is conducted by using the group of the alignment marks on the wafer to obtain a first calibration data. Next, a second alignment step is conducted by using a portion of the group of alignment marks on the wafer to obtain a second calibration data. The first calibration data is then compared with the second calibration data to obtain a comparison result. Next, a photoresist exposure step is conducted on the wafer according to the comparison result.

Abstract translation: 描述适用于光刻工艺的曝光方法。 首先，提供在其上形成有一组对准标记的晶片。 通过使用晶片上的对准标记组来进行第一对准步骤以获得第一校准数据。 接下来，通过使用晶片上的一组对准标记的一部分来进行第二对准步骤，以获得第二校准数据。 然后将第一校准数据与第二校准数据进行比较以获得比较结果。 接下来，根据比较结果在晶片上进行光致抗蚀剂曝光步骤。

公开(公告)号：US20100227069A1

公开(公告)日：2010-09-09

申请号：US12500995

申请日：2009-07-10

Applicant: Chiang-Lin Shih ,  Pei-Lin Huang ,  Ying-Chung Tseng

Inventor： Chiang-Lin Shih ,  Pei-Lin Huang ,  Ying-Chung Tseng

IPC: B05D3/12 ,  B05D3/00 ,  B05C11/00

CPC classification number: H01L21/6715 ,  G03F7/3014 ,  G03F7/3021

Abstract: An apparatus for homogenizing the developer concentration on the wafer and reducing the developer cost and the method thereof are provided in the present invention. The developer is provided on the wafer which then is spun to distribute the developer on the wafer. Next, the mechanical turbulence of the developer is produced on the wafer by the turbulence device or the mega-sonic vibrator. The apparatus is able to improve the uniformity of developer concentration, and the developer consumption is reduced.

Abstract translation: 在本发明中提供了用于使晶片上的显影剂浓度均匀化并降低显影剂成本的装置及其方法。 将显影剂提供在晶片上，然后旋转以将显影剂分布在晶片上。 接下来，通过湍流装置或超声波振动器在晶片上产生显影剂的机械湍流。 该装置能够提高显影剂浓度的均匀性，并且降低显影剂消耗。

公开(公告)号：US20100097596A1

公开(公告)日：2010-04-22

申请号：US12356849

申请日：2009-01-21

Applicant: Chiang-Lin Shih ,  Chun-Yen Huang

Inventor： Chiang-Lin Shih ,  Chun-Yen Huang

IPC: G03B27/32

CPC classification number: G03F7/70358

Abstract: A scanning exposure method is provided. A mask and a substrate are oppositely moved along a direction. The mask and the substrate are moved in at least two different uniform relative velocities during a one shot exposure, thus producing an exposed shot area of an expected size on the substrate.

Abstract translation: 提供扫描曝光方法。 掩模和基板沿着一个方向相反地移动。 在单次曝光期间，掩模和基底以至少两个不同的均匀相对速度移动，从而在基底上产生预期尺寸的曝光的照射区域。

公开(公告)号：US20080251933A1

公开(公告)日：2008-10-16

申请号：US11845746

申请日：2007-08-27

Applicant: Kuo-Yao Cho ,  Wen-Bin Wu ,  Chiang-Lin Shih ,  Chia-Cheng Lin

Inventor： Kuo-Yao Cho ,  Wen-Bin Wu ,  Chiang-Lin Shih ,  Chia-Cheng Lin

IPC: H01L23/525 ,  H01L23/52

CPC classification number: H01L23/528 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/0001 ,  H01L2924/00

Abstract: A metal interconnect structure includes a plurality of first plugs adjacent to each other, a first metal line extending in a first direction and contacting each first plug to form a first section with a tapered second section in between, and a second plug adjacent to the second section, both in a second direction normal to the first direction.

Abstract translation: 金属互连结构包括彼此相邻的多个第一插塞，第一金属线在第一方向上延伸并接触每个第一插塞以形成第一部分，第一部分之间具有锥形第二部分，第二插头与第二插头相邻 在第一方向垂直的第二方向上。

公开(公告)号：US06979638B2

公开(公告)日：2005-12-27

申请号：US10783014

申请日：2004-02-23

Applicant: Tse-Yao Huang ,  Yi-Nan Chen ,  Chiang-Lin Shih

Inventor： Tse-Yao Huang ,  Yi-Nan Chen ,  Chiang-Lin Shih

IPC: H01L21/3213 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/32139 ,  H01L21/76838 ,  H01L21/7685 ,  H01L21/76865 ,  H01L2221/1078

Abstract: Disclosed is a method for forming conducting wire and contact opening in a semiconductor device. The method of the present invention utilizes the formation of metal regions as a mask for etching a conductive layer of the semiconductor device to remove unnecessary portions so as to form conducting wires. The method of the present invention can reduce the necessary thickness of photoresist and well control the via resistance.

Abstract translation: 公开了一种在半导体器件中形成导线和接触开口的方法。 本发明的方法利用金属区域的形成作为用于蚀刻半导体器件的导电层的掩模，以除去不需要的部分以形成导线。 本发明的方法可以减少必需的光致抗蚀剂厚度并且很好地控制通孔电阻。

公开(公告)号：US20050186775A1

公开(公告)日：2005-08-25

申请号：US10783014

申请日：2004-02-23

Applicant: Tse-Yao Huang ,  Yi-Nan Chen ,  Chiang-Lin Shih

Inventor： Tse-Yao Huang ,  Yi-Nan Chen ,  Chiang-Lin Shih

IPC: H01L21/3213 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/32139 ,  H01L21/76838 ,  H01L21/7685 ,  H01L21/76865 ,  H01L2221/1078

Abstract: Disclosed is a method for forming conducting wire and contact opening in a semiconductor device. The method of the present invention utilizes the formation of metal regions as a mask for etching a conductive layer of the semiconductor device to remove unnecessary portions so as to form conducting wires. The method of the present invention can reduce the necessary thickness of photoresist and well control the via resistance.

Abstract translation: 公开了一种在半导体器件中形成导线和接触开口的方法。 本发明的方法利用金属区域的形成作为用于蚀刻半导体器件的导电层的掩模，以除去不需要的部分以形成导线。 本发明的方法可以减少必需的光致抗蚀剂厚度并且很好地控制通孔电阻。

公开(公告)号：US08658051B2

公开(公告)日：2014-02-25

申请号：US12119275

申请日：2008-05-12

Applicant: Kuo-Yao Cho ,  Wen-Bin Wu ,  Ya-Chih Wang ,  Chiang-Lin Shih ,  Chao-Wen Lay ,  Chih-Huang Wu

Inventor： Kuo-Yao Cho ,  Wen-Bin Wu ,  Ya-Chih Wang ,  Chiang-Lin Shih ,  Chao-Wen Lay ,  Chih-Huang Wu

IPC: C23F1/00 ,  B44C1/22 ,  H01L21/306

CPC classification number: H01L21/32139 ,  H01L21/0337 ,  H01L21/0338

Abstract: A method of improving lithography resolution on a semiconductor, including the steps of providing a substrate on which a protecting layer, a first etching layer and a photoresist layer are sequentially formed; patterning the photoresist layer to form an opening so as to partially reveal the first etching layer; implanting a first ion into the revealed first etching layer to form a first doped area; and implanting a second ion into the revealed first etching layer to form a second doped area, wherein the first doped area is independent from the second doped area is provided.

Abstract translation: 一种改善半导体上的光刻分辨率的方法，包括提供其上依次形成保护层，第一蚀刻层和光致抗蚀剂层的基板的步骤; 图案化光致抗蚀剂层以形成开口，以便部分地露出第一蚀刻层; 将第一离子注入到所揭示的第一蚀刻层中以形成第一掺杂区域; 以及将第二离子注入到所揭示的第一蚀刻层中以形成第二掺杂区域，其中所述第一掺杂区域与所述第二掺杂区域无关。

公开(公告)号：US20120140193A1

公开(公告)日：2012-06-07

申请号：US12960319

申请日：2010-12-03

Applicant: Chui-Fu Chiu ,  Chiang-Lin Shih

Inventor： Chui-Fu Chiu ,  Chiang-Lin Shih

IPC: G03B27/42

CPC classification number: H01L23/544 ,  G03F9/7003 ,  G03F9/7088 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dynamic wafer alignment method and an exposure scanner system are provided. The exposure scanner system having a scan path, includes an exposure apparatus, an optical sensor apparatus and a wafer stage. The method comprises the steps of: (a) providing a wafer, having a plurality of shot areas, wherein each shot area has a plurality of alignment marks thereon; (b) forming a photo-resist layer on the wafer; (c) detecting the alignment marks at a portion of a shot area along the scan path by the optical sensor apparatus to obtain compensation data for wafer alignment of the portion of the shot area; (d) performing real time feedback of the compensation data for wafer alignment to the wafer stage; (e) exposing the photo-resist layer at the portion of the shot area along the scan path; (f) continuously repeating the steps (c) to (e) at the shot area along the scan path until all of the photo-resist layer at the shot area are exposed; and (g) repeating the step (f) until the photo-resist layer of all of the shot areas on the wafer are exposed.

Abstract translation: 提供动态晶片对准方法和曝光扫描器系统。 具有扫描路径的曝光扫描器系统包括曝光装置，光学传感器装置和晶片台。 该方法包括以下步骤：（a）提供具有多个拍摄区域的晶片，其中每个拍摄区域上具有多个对准标记; （b）在晶片上形成光刻胶层; （c）通过光学传感器装置检测沿着扫描路径的拍摄区域的一部分处的对准标记，以获得用于拍摄区域的该部分的晶片对准的补偿数据; （d）对晶片台进行晶片对准的补偿数据的实时反馈; （e）沿着扫描路径在照射区域的部分处暴露光致抗蚀剂层; （f）沿扫描路径连续地重复步骤（c）至（e），直到所有的光刻胶层都被曝光; 和（g）重复步骤（f），直到晶片上的所有照射区域的光致抗蚀剂层露出。

公开(公告)号：US20090290134A1

公开(公告)日：2009-11-26

申请号：US12188218

申请日：2008-08-08

Applicant: Chiang-Lin Shih ,  Kuo-Yao Cho

Inventor： Chiang-Lin Shih ,  Kuo-Yao Cho

IPC: G03B27/52

CPC classification number: G03B27/52

Abstract: A method for exposure is provided to avoid a rise in temperature of a lens set. First, a light beam passes through a first light-receiving region of the lens set to expose a pattern on a substrate, and the first light-receiving region has a rise in temperature. Thereafter, the first light-receiving region is moved away. Afterwards, the light beam passes through a second light-receiving region of the lens set so that the first light-receiving region has a drop in temperature.

Abstract translation: 提供一种用于曝光的方法以避免透镜组的温度升高。 首先，光束穿过透镜组的第一光接收区域以暴露衬底上的图案，并且第一光接收区域具有升高的温度。 此后，第一光接收区域移开。 之后，光束通过透镜组的第二光接收区域，使得第一光接收区域的温度下降。

公开(公告)号：US20090111060A1

公开(公告)日：2009-04-30

申请号：US12125074

申请日：2008-05-22

Applicant: Chiang-Lin Shih ,  Feng-Yi Chen ,  Kuo-Yao Cho

Inventor： Chiang-Lin Shih ,  Feng-Yi Chen ,  Kuo-Yao Cho

IPC: G03F7/20

CPC classification number: G03F7/7085 ,  F15B2211/20515 ,  G03F7/70516 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7019 ,  G03F9/7046 ,  G03F9/7088

Abstract: An exposure method suitable for a photolithography process is described. First, a wafer with a group of alignment marks formed thereon is provided. A first alignment step is conducted by using the group of the alignment marks on the wafer to obtain a first calibration data. Next, a second alignment step is conducted by using a portion of the group of alignment marks on the wafer to obtain a second calibration data. The first calibration data is then compared with the second calibration data to obtain a comparison result. Next, a photoresist exposure step is conducted on the wafer according to the comparison result.

Abstract translation: 描述适用于光刻工艺的曝光方法。 首先，提供在其上形成有一组对准标记的晶片。 通过使用晶片上的对准标记组来进行第一对准步骤以获得第一校准数据。 接下来，通过使用晶片上的一组对准标记的一部分来进行第二对准步骤，以获得第二校准数据。 然后将第一校准数据与第二校准数据进行比较以获得比较结果。 接下来，根据比较结果在晶片上进行光致抗蚀剂曝光步骤。