公开(公告)号：US08837798B2

公开(公告)日：2014-09-16

申请号：US13553793

申请日：2012-07-19

Applicant: Arvin Huang-Te Li ,  Yio-Wha Shau ,  Yu-Ching Chang ,  Bai-Kuang Hwang ,  Min Shih

Inventor： Arvin Huang-Te Li ,  Yio-Wha Shau ,  Yu-Ching Chang ,  Bai-Kuang Hwang ,  Min Shih

IPC: G06K9/00 ,  G06K9/46

CPC classification number: A61B8/06 ,  A61B8/488 ,  A61B8/5223

Abstract: A time domain signal analysis method is provided. The signal analysis method includes the following steps. A signal to be analyzed is received. The signal to be analyzed is iteratively sifted by using Empirical Mode Decomposition (EMD) to extract at least one intrinsic function (IMF). A normalized Hilbert transform is performed on the IMF. The transformed IMF includes phase information. The transformed IMF is processed by means of phase processing to obtain the processed IMF including angular frequency information. The foregoing signal analysis method could be utilized in an ultrasound imaging system to identify image information of ultrasound images.

Abstract translation: 提供了时域信号分析方法。 信号分析方法包括以下步骤。 接收待分析的信号。 通过使用经验模式分解（EMD）来提取至少一个内在函数（IMF）来迭代地筛选待分析的信号。 在IMF上执行归一化希尔伯特变换。 经转换的IMF包括阶段信息。 通过相位处理来处理变换的IMF，以获得包括角频率信息的经处理的IMF。 上述信号分析方法可用于超声成像系统中以识别超声图像的图像信息。

公开(公告)号：US08795678B2

公开(公告)日：2014-08-05

申请号：US13470554

申请日：2012-05-14

Applicant: Shu-Mei Liang ,  Yu-Ching Chang

Inventor： Shu-Mei Liang ,  Yu-Ching Chang

IPC: A61K39/39 ,  A61K39/145 ,  A61K39/295

CPC classification number: A61K39/145 ,  A61K39/12 ,  A61K39/39 ,  A61K2039/55516 ,  A61K2039/6075 ,  C12N2760/16134 ,  C12N2770/32122

Abstract: Two new TLR2 agonists, VP1 and VP3, which are structural proteins of FMDV. Residues of VP3 responsible for TLR2 activation are identified. In vivo experiments showed that VP3-4xM2e is active as a vaccine adjuvant.

Abstract translation: 两种新的TLR2激动剂，VP1和VP3，它们是FMDV的结构蛋白。 鉴定出负责TLR2活化的VP3残基。 体内实验表明VP3-4xM2e作为疫苗佐剂是有活性的。

公开(公告)号：US20140197844A1

公开(公告)日：2014-07-17

申请号：US14151630

申请日：2014-01-09

Applicant: Kuo-Ching Chang

Inventor： Kuo-Ching Chang

IPC: G01R31/02

CPC classification number: G01R31/025 ,  G01R31/40

Abstract: An active continuous DC power supply insulation malfunction detection circuit includes a leakage current detection unit, a positive voltage terminal compensation unit and a negative voltage terminal compensation unit respectively at a positive voltage terminal and a negative voltage terminal of the power supply system. The positive and negative voltage terminal compensation units include respectively a one-way discharger and a power source unit that are forward conducted. The invention can improve the shortcoming of the conventional detection techniques that use passive elements for detecting ground insulation deterioration by letting the power source unit discharge through the one-way discharger so that the leakage current detection unit can continuously detect and measure current variations passing through the positive and negative voltage terminals without interruption, and thereby easily obtain leakage current value and provide active and continuous detection of ground insulation deterioration.

Abstract translation: 有源连续直流电源绝缘故障检测电路分别包括在电源系统的正电压端子和负电压端子处的泄漏电流检测单元，正电压端子补偿单元和负电压端子补偿单元。 正极和负极电压端子补偿单元分别包括正向传导的单向放电器和电源单元。 本发明可以通过使电源单元通过单向放电器放电而使用无源元件来检测接地绝缘劣化的传统检测技术的缺点，使得漏电流检测单元可以连续地检测和测量通过 正负电压端子不中断，从而容易获得漏电流值，并提供有源和连续的接地绝缘劣化检测。

公开(公告)号：US08770071B2

公开(公告)日：2014-07-08

申请号：US13083397

申请日：2011-04-08

Applicant: Yeh-Ching Chang ,  Hsien-Cheng Lin

Inventor： Yeh-Ching Chang ,  Hsien-Cheng Lin

IPC: B25B23/151 ,  B25B23/14 ,  B25B13/16

CPC classification number: B25B13/463 ,  B25B23/1425 ,  B25G1/043

Abstract: An electronic torque wrench a wrench head unit adapted to engage and turn a fastener, a tubular first wrench body securely engaged with the wrench head unit, a tubular second wrench body coupled and aligned with the first wrench body by a fitting member to permit rotation of the second wrench body relative to the first wrench body, a mounting shell sleeved on the second wrench body for mounting a display unit to provide a display representing a measured torque. By rotation of the second wrench body, the display unit can be adjusted to a desired angular position for being viewed easily by the user.

Abstract translation: 电子扭矩扳手，适于接合和转动紧固件的扳手头单元，与扳手头单元牢固接合的管状第一扳手主体，管状第二扳手主体，其通过装配构件与第一扳手主体联接并对准， 所述第二扳手主体相对于所述第一扳手主体，安装壳体套在所述第二扳手主体上，用于安装显示单元以提供表示测量转矩的显示器。 通过第二扳手主体的旋转，可以将显示单元调整到期望的角度位置，以便用户容易地观看。

公开(公告)号：US08747587B2

公开(公告)日：2014-06-10

申请号：US13080916

申请日：2011-04-06

Applicant: Chung-Chih Feng ,  Yung-Yu Fu ,  Kun-Lin Chiang ,  Jung-Ching Chang ,  Chih-Chenh Lin ,  Chun-Wei Wu ,  Pei-Huo Huang ,  I-Peng Yao

Inventor： Chung-Chih Feng ,  Yung-Yu Fu ,  Kun-Lin Chiang ,  Jung-Ching Chang ,  Chih-Chenh Lin ,  Chun-Wei Wu ,  Pei-Huo Huang ,  I-Peng Yao

IPC: B32B5/18 ,  B32B5/24

CPC classification number: B32B5/32 ,  B32B5/022 ,  B32B5/024 ,  B32B5/18 ,  B32B5/245 ,  B32B7/06 ,  B32B7/12 ,  B32B27/065 ,  B32B27/10 ,  B32B27/12 ,  B32B27/40 ,  B32B29/00 ,  B32B37/12 ,  B32B38/164 ,  B32B2038/0084 ,  B32B2255/12 ,  B32B2255/26 ,  B32B2266/0221 ,  B32B2266/0228 ,  B32B2266/0235 ,  B32B2266/025 ,  B32B2266/0278 ,  B32B2266/0292 ,  B32B2305/022 ,  B32B2305/18 ,  B32B2305/20 ,  B32B2553/00 ,  C08J9/365 ,  Y10T428/249953 ,  Y10T428/249981 ,  Y10T442/3341 ,  Y10T442/649

Abstract: A multi-layered material and a method for making the same are provided. The multi-layered material includes a first foamed layer, a substrate, a second foamed layer, and a surface layer. The first foamed layer has a plurality of first cells. The substrate is a fabric. The second foamed layer has a plurality of second cells. The foaming method of the second foamed layer is different from that of the first foamed layer. The size of the second cells is different from that of the first cells. The variation in size of the second cells is different from that of the first cells. The surface layer is disposed on the second foamed layer. Thus, when the multi-layered material is used as a surface cover of a ball, it can provide excellent resilience and control, and improve manufacturing efficiency.

Abstract translation: 提供多层材料及其制造方法。 多层材料包括第一发泡层，基底，第二发泡层和表面层。 第一泡沫层具有多个第一泡孔。 基材是织物。 第二泡沫层具有多个第二泡孔。 第二泡沫层的发泡方法与第一发泡层的发泡方法不同。 第二细胞的大小不同于第一细胞的大小。 第二细胞的大小变化与第一细胞的大小不同。 表面层设置在第二发泡层上。 因此，当使用多层材料作为球的表面覆盖层时，其可以提供优异的弹性和控制，并且提高制造效率。

公开(公告)号：US08734901B2

公开(公告)日：2014-05-27

申请号：US13401919

申请日：2012-02-22

Applicant: Keisuke Suzuki ,  Pao-Hwa Chou ,  Te ching Chang

Inventor： Keisuke Suzuki ,  Pao-Hwa Chou ,  Te ching Chang

IPC: C23C16/00

CPC classification number: H01L21/0228 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/52 ,  H01L21/0217

Abstract: A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate is disclosed. The film deposition method includes steps of evacuating a process chamber where the substrate is accommodated, without supplying any gas to the process chamber; supplying an inert gas to the process chamber until a pressure within the process chamber becomes a predetermined pressure; supplying the first source gas to the process chamber filled with the inert gas at the predetermined pressure without evacuating the process chamber; stopping supplying the first source gas to the process chamber and evacuating the process chamber; supplying the second source gas to the process chamber; and stopping supplying the second source gas to the process chamber and evacuating the process chamber.

Abstract translation: 公开了一种通过交替地将至少第一源气体和第二源气体供应到基底而沉积薄膜的成膜方法。 膜沉积方法包括以下步骤：将处理室排出到容纳基板的步骤，而不向处理室供应任何气体; 向所述处理室供应惰性气体，直到所述处理室内的压力变为预定压力; 将第一源气体以预定压力供给到填充有惰性气体的处理室，而不需要排空处理室; 停止向处理室供应第一源气体并抽空处理室; 将第二源气体供应到处理室; 并停止向处理室供应第二源气体并抽空处理室。

公开(公告)号：US20140070299A1

公开(公告)日：2014-03-13

申请号：US13609879

申请日：2012-09-11

Applicant: Ching-Chang Lin ,  Kai-Hsiang Chang ,  Chih-Yuan Wu ,  Kuang-Wen Liu

Inventor： Ching-Chang Lin ,  Kai-Hsiang Chang ,  Chih-Yuan Wu ,  Kuang-Wen Liu

IPC: H01L29/792 ,  H01L21/28

CPC classification number: H01L21/28282 ,  H01L27/11563 ,  H01L27/11568 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7923

Abstract: An improved semiconductor device is provided whereby the semiconductor device is defined by a layered structure comprising a first dielectric layer, a data storage material disposed on the first dielectric layer, and a second dielectric layer disposed on the data storage material, the layered structured substantially forming the outer later of the semiconductor device. For example, the semiconductor device may be a SONOS structure having an oxide-nitride-oxide (ONO) film that substantially surrounds the SONOS structure. The invention also provides methods for fabricating the semiconductor device and the SONOS structure of the invention.

Abstract translation: 提供了一种改进的半导体器件，由此半导体器件由包括第一电介质层，设置在第一电介质层上的数据存储材料和设置在数据存储材料上的第二电介质层的分层结构限定， 在半导体器件的后面。 例如，半导体器件可以是具有基本上围绕SONOS结构的氧化物 - 氧化物（ONO）膜的SONOS结构。 本发明还提供了制造本发明的半导体器件和SONOS结构的方法。

公开(公告)号：US20140001559A1

公开(公告)日：2014-01-02

申请号：US13538734

申请日：2012-06-29

Applicant: Jr-Jung Lin ,  Chih-Han Lin ,  Ming-Ching Chang

Inventor： Jr-Jung Lin ,  Chih-Han Lin ,  Ming-Ching Chang

IPC: H01L27/088 ,  H01L21/283

CPC classification number: H01L29/66795 ,  H01L21/30604 ,  H01L21/823431 ,  H01L29/42372 ,  H01L29/66545 ,  H01L29/6681

Abstract: The disclosure relates to a dummy gate electrode of a semiconductor device. An embodiment comprises a substrate comprising a first surface; an insulation region covering a portion of the first surface, wherein the top of the insulation region defines a second surface; and a dummy gate electrode over the second surface, wherein the dummy gate electrode comprises a bottom and a base broader than the bottom, wherein a ratio of a width of the bottom to a width of the base is from about 0.5 to about 0.9.

公开(公告)号：US20130320410A1

公开(公告)日：2013-12-05

申请号：US13484047

申请日：2012-05-30

Applicant: Jr-Jung Lin ,  Chih-Han Lin ,  Jin-Aun Ng ,  Ming-Ching Chang ,  Chao-Cheng Chen

Inventor： Jr-Jung Lin ,  Chih-Han Lin ,  Jin-Aun Ng ,  Ming-Ching Chang ,  Chao-Cheng Chen

IPC: H01L29/78 ,  H01L21/283

CPC classification number: H01L29/78 ,  H01L21/283 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/66545

Abstract: The invention relates to integrated circuit fabrication, and more particularly to a metal gate electrode. An exemplary structure for a semiconductor device comprises a substrate comprising a major surface; a first rectangular gate electrode on the major surface comprising a first layer of multi-layer material; a first dielectric material adjacent to one side of the first rectangular gate electrode; and a second dielectric material adjacent to the other 3 sides of the first rectangular gate electrode, wherein the first dielectric material and the second dielectric material collectively surround the first rectangular gate electrode.

Abstract translation: 本发明涉及集成电路制造，更具体地涉及金属栅电极。 半导体器件的示例性结构包括：包括主表面的衬底; 主表面上的第一矩形栅电极，包括第一层多层材料; 与第一矩形栅电极的一侧相邻的第一电介质材料; 以及与所述第一矩形栅电极的其他3侧相邻的第二电介质材料，其中所述第一电介质材料和所述第二电介质材料共同围绕所述第一矩形栅电极。

公开(公告)号：USD692400S1

公开(公告)日：2013-10-29

申请号：US29435784

申请日：2012-10-29

Applicant: Ching-Chang Ni ,  Tzu-Cheng Yu ,  Hsiao-Wen Tseng ,  Hong-Xiu Luo

Designer： Ching-Chang Ni ,  Tzu-Cheng Yu ,  Hsiao-Wen Tseng ,  Hong-Xiu Luo