公开(公告)号：US20120061667A1

公开(公告)日：2012-03-15

申请号：US13231250

申请日：2011-09-13

Applicant: Chein-Fu Huang ,  Chao-Hsing CHEN ,  Chiu-Lin Yao ,  Hsin-Mao Liu ,  Chien-Kai Chung

Inventor： Chein-Fu Huang ,  Chao-Hsing CHEN ,  Chiu-Lin Yao ,  Hsin-Mao Liu ,  Chien-Kai Chung

IPC: H01L33/32 ,  H01L33/26

CPC classification number: H01L27/153 ,  H01L33/20 ,  H01L33/22 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting element includes: a substrate including a first surface and a second surface different from the first surface; a plurality of light-emitting structure units disposed on the second surface; and a trench formed on the first surface and between the plurality of light-emitting structure units.

Abstract translation: 发光元件包括：基板，包括第一表面和与第一表面不同的第二表面; 设置在所述第二表面上的多个发光结构单元; 以及形成在所述第一表面上和所述多个发光结构单元之间的沟槽。

公开(公告)号：US20120025250A1

公开(公告)日：2012-02-02

申请号：US13193970

申请日：2011-07-29

Applicant: Min-Hsun Hsieh ,  Wei-Yu Chen ,  Li-Ming Chang ,  Chien-Yuan Wang ,  Chiu-Lin Yao

Inventor： Min-Hsun Hsieh ,  Wei-Yu Chen ,  Li-Ming Chang ,  Chien-Yuan Wang ,  Chiu-Lin Yao

IPC: H01L33/20

CPC classification number: H01L33/382 ,  H01L33/24 ,  H01L33/385 ,  H01L33/387 ,  H01L2933/0016

Abstract: This application provides a semiconductor light-emitting device and the manufacturing method thereof. The semiconductor light-emitting device comprises a semiconductor light-emitting structure and a thinned substrate. The semiconductor light-emitting structure comprises a plurality of semiconductor layers and a plurality of first channels, wherein a plurality of first channels has a predetermined depth that penetrating at least two layers of the plurality of semiconductor layers.

Abstract translation: 本申请提供了一种半导体发光器件及其制造方法。 半导体发光器件包括半导体发光结构和薄化衬底。 半导体发光结构包括多个半导体层和多个第一通道，其中多个第一通道具有穿透多个半导体层的至少两层的预定深度。

公开(公告)号：US20110253979A1

公开(公告)日：2011-10-20

申请号：US13170360

申请日：2011-06-28

Applicant: Chiu-Lin Yao ,  Ta-Cheng Hsu

Inventor： Chiu-Lin Yao ,  Ta-Cheng Hsu

IPC: H01L33/06 ,  H01L33/58

CPC classification number: H01L33/06 ,  H01L2933/0083

Abstract: A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.

Abstract translation: 公开了一种发光器件及其制造方法。 发光装置是包括生长衬底，n型半导体层，量子阱有源层和p型半导体层的半导体器件。 它结合了全息和量子阱相互扩散（QWI）以形成具有二维周期性变化的介电常数或量子阱活性层中的二维周期性变化的材料组成的光子晶体发光器件。 光子晶体发光器件可以提高内部效率和光提取效率。

公开(公告)号：US20110121287A1

公开(公告)日：2011-05-26

申请号：US12949863

申请日：2010-11-19

Applicant: Chiu Lin Yao ,  Ya Ian Yang

Inventor： Chiu Lin Yao ,  Ya Ian Yang

IPC: H01L33/22

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/22

Abstract: Disclosed is a light-emitting device including a permanent substrate, an adhesive layer on the permanent substrate, a current diffusion layer on the adhesive layer, and a semiconductor stack layer on the current diffusion layer. The current diffusion layer has an etched portion and an unetched portion, wherein the etched and unetched portions have a horizontal height difference. The horizontal height difference and the current diffusion layer thickness have a ratio of 20:100 to 70:100.

Abstract translation: 公开了一种发光装置，其包括永久性基板，永久性基板上的粘合层，粘合剂层上的电流扩散层，以及电流扩散层上的半导体堆叠层。 电流扩散层具有蚀刻部分和未蚀刻部分，其中蚀刻和未蚀刻部分具有水平高度差。 水平高差和电流扩散层厚度的比例为20:100至70:100。

公开(公告)号：US20130015473A1

公开(公告)日：2013-01-17

申请号：US13545354

申请日：2012-07-10

Applicant: CHAO-HSING CHEN ,  CHIEN-KAI CHUNG ,  HSIN-MAO LIU ,  CHIU-LIN YAO ,  CHIEN-FU HUANG

Inventor： CHAO-HSING CHEN ,  CHIEN-KAI CHUNG ,  HSIN-MAO LIU ,  CHIU-LIN YAO ,  CHIEN-FU HUANG

IPC: H01L33/08

CPC classification number: H01L25/0753 ,  H01L25/0756 ,  H01L33/385 ,  H01L33/62 ,  H01L2224/16

Abstract: The application provides a light-emitting device, comprising a substrate; a plurality of first light-emitting diode units on the substrate, wherein every first light-emitting diode unit has a first electrode structure; and a plurality of second light-emitting diode units among the plurality of first light-emitting diode units, wherein every second light-emitting diode unit has a second electrode structure. The second electrode structure of the second light-emitting diode unit is flipped over and electrically connected with the adjacent first electrode structure of the first light-emitting diode unit.

Abstract translation: 本发明提供一种发光装置，其包括基板; 多个第一发光二极管单元，其中每个第一发光二极管单元具有第一电极结构; 以及多个第一发光二极管单元中的多个第二发光二极管单元，其中每个第二发光二极管单元具有第二电极结构。 第二发光二极管单元的第二电极结构被翻转并与第一发光二极管单元的相邻的第一电极结构电连接。

公开(公告)号：USD673699S1

公开(公告)日：2013-01-01

申请号：US29424962

申请日：2012-06-18

Applicant: Chiu-Lin Yao ,  Been-Yu Liaw ,  Ming-Chi Hsu

Designer： Chiu-Lin Yao ,  Been-Yu Liaw ,  Ming-Chi Hsu

公开(公告)号：US20110241057A1

公开(公告)日：2011-10-06

申请号：US13161835

申请日：2011-06-16

Applicant: Chien-Fu SHEN ,  Chao-Hsing Chen ,  Chien-Fu Huang ,  Shih-I Chen ,  Chiu-Lin Yao ,  Chia-Liang Hsu ,  Chen Ou

Inventor： Chien-Fu SHEN ,  Chao-Hsing Chen ,  Chien-Fu Huang ,  Shih-I Chen ,  Chiu-Lin Yao ,  Chia-Liang Hsu ,  Chen Ou

IPC: H01L33/58 ,  H01L33/00

CPC classification number: H01L33/10 ,  H01L33/22

Abstract: A light-emitting device includes a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer includes a plurality of voids between the active layer and the first pad.

Abstract translation: 发光装置包括：基板; 形成在所述基板上的第一半导体层; 形成在所述第一半导体层上的有源层; 形成在所述有源层上的第二半导体层; 以及形成在所述第二半导体层上的第一焊盘，其中所述第二半导体层在所述有源层和所述第一焊盘之间包括多个空隙。

公开(公告)号：US08022425B2

公开(公告)日：2011-09-20

申请号：US12314730

申请日：2008-12-16

Applicant: Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Tzer-Perng Chen

Inventor： Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Tzer-Perng Chen

IPC: H01L33/00

CPC classification number: H01L33/382 ,  H01L33/08 ,  H01L33/22 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.

Abstract translation: 提供了示例性的半导体器件。 半导体器件包括半导体堆叠层和导电结构。 导电结构位于半导体堆叠层上。 导电结构包括底部和在其相对侧上的顶部。 底部与半导体堆叠层接触。 顶部的顶部宽度与底部的底部宽度之比小于0.7。 导电结构可以是导电点结构或导线结构。

公开(公告)号：US20100252103A1

公开(公告)日：2010-10-07

申请号：US12753589

申请日：2010-04-02

Applicant: Chiu-Lin YAO ,  Ying-Yong SU

Inventor： Chiu-Lin YAO ,  Ying-Yong SU

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/0725 ,  H01L25/0756 ,  H01L31/0687 ,  H01L31/076 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521 ,  H01L2924/00

Abstract: A photoelectronic element having a transparent adhesion structure includes a supporting substrate; a first transparent adhesion layer formed on the supporting substrate; a second transparent adhesion layer formed on the first transparent adhesion layer; and a first semiconductor stack layer formed on the second transparent adhesion layer wherein the first semiconductor stack layer includes a first active layer; wherein the interface between the first transparent adhesion layer and the second transparent adhesion layer contains hydrogen-oxygen bond after being treated by an activator.

Abstract translation: 具有透明粘合结构的光电子元件包括支撑基板; 形成在所述支撑基板上的第一透明粘合层; 形成在第一透明粘合层上的第二透明粘合层; 以及形成在所述第二透明粘合层上的第一半导体堆叠层，其中所述第一半导体堆叠层包括第一有源层; 其中所述第一透明粘合层和所述第二透明粘合层之间的界面在通过活化剂处理之后包含氢 - 氧键。

公开(公告)号：US09455242B2

公开(公告)日：2016-09-27

申请号：US13226095

申请日：2011-09-06

Applicant: Hsin-Ying Wang ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Chi-Hsing Chen ,  Chien-Kai Chung ,  Min-Hsun Hsieh ,  Chia-Liang Hsu ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Hsiang-Ling Chang

Inventor： Hsin-Ying Wang ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Chi-Hsing Chen ,  Chien-Kai Chung ,  Min-Hsun Hsieh ,  Chia-Liang Hsu ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Hsiang-Ling Chang

IPC: H01L31/042 ,  H01L33/00 ,  H01L25/075 ,  H01L31/18 ,  H01L23/00 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L24/24 ,  H01L24/82 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/01029 ,  H01L2924/12041 ,  Y02E10/50 ,  H01L2924/00

Abstract: A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.

Abstract translation: 半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。