公开(公告)号：US20050045906A1

公开(公告)日：2005-03-03

申请号：US10655150

申请日：2003-09-03

Applicant: Chuan-Cheng Tu ,  Cheng-Chung Young ,  Pao-I Huang ,  Jen-Chau Wu

Inventor： Chuan-Cheng Tu ,  Cheng-Chung Young ,  Pao-I Huang ,  Jen-Chau Wu

IPC: H01L29/22 ,  H01L29/24 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/04 ,  H01L33/14

Abstract: A light emitting device is disclosed. The light emitting device comprises a contact layer and an oxide transparent layer located directly on the contact layer. The contact layer has a stacked structure formed by alternately stacking a plurality of nitride semiconductor layers having a wider bandgap and a plurality of nitride semiconductor layers having a narrower bandgap.

Abstract translation: 公开了一种发光器件。 发光器件包括直接位于接触层上的接触层和氧化物透明层。 接触层具有通过交替堆叠具有较宽带隙的多个氮化物半导体层和具有较窄带隙的多个氮化物半导体层而形成的层叠结构。

公开(公告)号：US20110300337A1

公开(公告)日：2011-12-08

申请号：US13091747

申请日：2011-04-21

Applicant: Chuan-Cheng TU

Inventor： Chuan-Cheng TU

IPC: B32B3/00

CPC classification number: H01L33/20 ,  H01L33/0062 ,  H01L33/22 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  Y10T428/24355 ,  Y10T428/24479 ,  H01L2924/00

Abstract: A substrate for light-emitting diode (LED) has a top surface being divided into a plurality of first units and a plurality of second units. The first units respectively have a plurality of first microstructures, and the second units respectively have a plurality of second microstructures different from the first microstructures of the first units. Any two adjacent ones of the first units have one second unit located therebetween, while the second units are located around each of the first units. The second units are micro-roughened surfaces that have a relatively small average height difference between tops and bottoms thereof, allowing bridging structures formed on the second units to have bottom portions with uniform thickness, which in turn enables increased good yield of LED production.

Abstract translation: 用于发光二极管（LED）的衬底具有被分成多个第一单元和多个第二单元的顶表面。 第一单元分别具有多个第一微结构，第二单元分别具有与第一单元的第一微结构不同的多个第二微结构。 第一单元中的任何两个相邻的单元具有位于其间的一个第二单元，而第二单元位于每个第一单元周围。 第二单元是在其顶部和底部之间具有相对较小的平均高度差的微粗糙表面，允许形成在第二单元上的桥接结构具有均匀厚度的底部部分，这又可以提高LED生产的良好产量。

公开(公告)号：US20110084304A1

公开(公告)日：2011-04-14

申请号：US12893181

申请日：2010-09-29

Applicant: Jin-Ywan Lin ,  Chuan-Cheng Tu

Inventor： Jin-Ywan Lin ,  Chuan-Cheng Tu

IPC: H01L33/36

CPC classification number: H01L27/153 ,  H01L33/0079 ,  H01L33/382

Abstract: An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.

Abstract translation: 本发明的实施例公开了一种包括第一多层结构的发光器件，包括第一下层; 第一上层; 以及第一有源层，其能够在偏置电压下发光并且定位在所述第一下层和所述第一上层之间; 与所述第一多层结构相邻的第二厚层; 与第二厚层相关联的第二连接层; 电连接到第二连接层和第一多层结构的连接线; 底物; 以及在第一多层结构和衬底之间的两个或更多个欧姆接触电极。

公开(公告)号：US07923841B2

公开(公告)日：2011-04-12

申请号：US12426015

申请日：2009-04-17

Applicant: Chuan-Cheng Tu

Inventor： Chuan-Cheng Tu

IPC: H01L23/48 ,  H01L21/30

CPC classification number: H01L21/187 ,  H01L24/28 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322

Abstract: A method for bonding a semiconductor structure with a substrate and a high efficiency photonic device manufactured by using the same method are disclosed. The method comprises steps of: providing a semiconductor structure and a substrate; forming a composite bonding layer on the semiconductor structure; and bonding the substrate with the composite bonding layer on the semiconductor structure to form a composite alloyed bonding layer. The semiconductor structure includes a compound semiconductor substrate and a high efficiency photonic device is produced after the compound semiconductor substrate is removed. Besides, the composite bonding layer can be formed on the substrate or formed on both the semiconductor structure and substrate simultaneously.

Abstract translation: 公开了一种通过使用相同方法制造的半导体结构与基板和高效光子器件的接合方法。 该方法包括以下步骤：提供半导体结构和衬底; 在所述半导体结构上形成复合结合层; 以及将所述基板与所述复合结合层接合在所述半导体结构上以形成复合合金化结合层。 半导体结构包括化合物半导体衬底，并且在去除化合物半导体衬底之后制造高效率的光子器件。 此外，复合结合层可以形成在基板上或同时形成在半导体结构和基板上。

公开(公告)号：US07816695B2

公开(公告)日：2010-10-19

申请号：US12320085

申请日：2009-01-16

Applicant: Jin-Ywan Lin ,  Chuan-Cheng Tu

Inventor： Jin-Ywan Lin ,  Chuan-Cheng Tu

IPC: H01L33/00

CPC classification number: H01L27/153 ,  H01L33/0079 ,  H01L33/382

Abstract: An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.

Abstract translation: 本发明的实施例公开了一种包括第一多层结构的发光器件，包括第一下层; 第一上层; 以及第一有源层，其能够在偏置电压下发光并且定位在所述第一下层和所述第一上层之间; 与所述第一多层结构相邻的第二厚层; 与第二厚层相关联的第二连接层; 电连接到第二连接层和第一多层结构的连接线; 底物; 以及在第一多层结构和衬底之间的两个或更多个欧姆接触电极。

公开(公告)号：US20090261377A1

公开(公告)日：2009-10-22

申请号：US12426015

申请日：2009-04-17

Applicant: Chuan-Cheng TU

Inventor： Chuan-Cheng TU

IPC: H01L33/00 ,  H01L21/18

CPC classification number: H01L21/187 ,  H01L24/28 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322

Abstract: A method for bonding a semiconductor structure with a substrate and a high efficiency photonic device manufactured by using the same method are disclosed. The method comprises steps of: providing a semiconductor structure and a substrate; forming a composite bonding layer on the semiconductor structure; and bonding the substrate with the composite bonding layer on the semiconductor structure to form a composite alloyed bonding layer. The semiconductor structure includes a compound semiconductor substrate and a high efficiency photonic device is produced after the compound semiconductor substrate is removed. Besides, the composite bonding layer can be formed on the substrate or formed on both the semiconductor structure and substrate simultaneously.

Abstract translation: 公开了一种通过使用相同的方法制造的半导体结构与基板和高效光子器件的接合方法。 该方法包括以下步骤：提供半导体结构和衬底; 在所述半导体结构上形成复合结合层; 以及将所述基板与所述复合结合层接合在所述半导体结构上以形成复合合金化结合层。 半导体结构包括化合物半导体衬底，并且在除去化合物半导体衬底之后制造高效率的光子器件。 此外，复合结合层可以形成在基板上或同时形成在半导体结构和基板上。

公开(公告)号：US20090029492A1

公开(公告)日：2009-01-29

申请号：US12231164

申请日：2008-08-29

Applicant: Chuan-Cheng Tu ,  Pao-I Huang ,  Jen-Chau Wu

Inventor： Chuan-Cheng Tu ,  Pao-I Huang ,  Jen-Chau Wu

IPC: H01L21/00

CPC classification number: H01L33/22

Abstract: A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.

Abstract translation: 公开了一种制造发光二极管（LED）的方法。 本发明的LED包括第一极性的半导体层，有源层和从底部至上层叠的第二极性的半导体层，其中至少由有源层和半导体层组成的层叠结构 第二极性在LED和/或至少一个谷的俯视图中具有波形边界的一侧，从而提高将光发射到LED的外部的效率。

公开(公告)号：US06995403B2

公开(公告)日：2006-02-07

申请号：US10655150

申请日：2003-09-03

Applicant: Chuan-Cheng Tu ,  Cheng-Chung Young ,  Pao-I Huang ,  Jen-Chau Wu

Inventor： Chuan-Cheng Tu ,  Cheng-Chung Young ,  Pao-I Huang ,  Jen-Chau Wu

IPC: H01L29/22 ,  H01L29/221 ,  H01L29/225 ,  H01L29/24 ,  H01L29/739

CPC classification number: H01L33/32 ,  H01L33/04 ,  H01L33/14

Abstract: A light emitting device is disclosed. The light emitting device comprises a contact layer and an oxide transparent layer located directly on the contact layer. The contact layer has a stacked structure formed by alternately stacking a plurality of nitride semiconductor layers having a wider bandgap and a plurality of nitride semiconductor layers having a narrower bandgap.

Abstract translation: 公开了一种发光器件。 发光器件包括直接位于接触层上的接触层和氧化物透明层。 接触层具有通过交替堆叠具有较宽带隙的多个氮化物半导体层和具有较窄带隙的多个氮化物半导体层而形成的层叠结构。

公开(公告)号：US6066862A

公开(公告)日：2000-05-23

申请号：US144357

申请日：1998-08-31

Applicant: Pan-Tzu Chang ,  Chuan-Cheng Tu ,  Tzer-Perng Chen

Inventor： Pan-Tzu Chang ,  Chuan-Cheng Tu ,  Tzer-Perng Chen

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC classification number: H01L33/30 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/14

Abstract: A semiconductor light emitting diode includes a first conductivity type compound semiconductor substrate, a first conductivity type lower cladding layer, an active layer of undoped AlGaInP or multiple quantum well structure, and a second conductivity type upper cladding structure. The upper cladding structure comprises an (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P four element compound semiconductor material. The improvement is that the upper cladding structure has a thin and very high resistivity layer inside.

Abstract translation: 半导体发光二极管包括第一导电型化合物半导体衬底，第一导电型下包层，未掺杂的AlGaInP或多量子阱结构的有源层和第二导电型上包层结构。 上部包层结构包括（Al x Ga 1-x）y In 1-y P 4元素化合物半导体材料。 改进之处在于，上部包层结构在其内部具有薄且非常高的电阻率层。

公开(公告)号：US20120181546A1

公开(公告)日：2012-07-19

申请号：US13153126

申请日：2011-06-03

Applicant: Chuan-Cheng TU

Inventor： Chuan-Cheng TU

IPC: H01L33/02 ,  H01L33/60

CPC classification number: H01L33/382

Abstract: A light-emitting diode includes a first electrode, a conductive substrate layer, a reflective layer, a first electrical semiconductor layer, a active layer, a second electrical semiconductor layer, and at least one second electrode. The conductive substrate layer is formed on the first electrode. The reflective layer is formed on the conductive substrate layer. The first electrical semiconductor layer is formed on the reflective layer. The active layer is formed on the first electrical semiconductor layer. The second electrical semiconductor layer is formed on the active layer. The at least one second electrode is formed on the second electrical semiconductor layer. At least one third electrode is additionally disposed under the second electrical semiconductor layer. At least one connection channel is disposed between the second electrode and the third electrode, so that the second electrode and the third electrode are electrically connected.

Abstract translation: 发光二极管包括第一电极，导电基底层，反射层，第一电半导体层，有源层，第二电半导体层以及至少一个第二电极。 导电基底层形成在第一电极上。 反射层形成在导电基底层上。 第一电半导体层形成在反射层上。 有源层形成在第一电半导体层上。 第二电半导体层形成在有源层上。 至少一个第二电极形成在第二电半导体层上。 至少一个第三电极另外设置在第二电半导体层下面。 至少一个连接通道设置在第二电极和第三电极之间，使得第二电极和第三电极电连接。