摘要:
A high density plasma chemical vapor deposition apparatus includes a vacuum chamber provided with an inlet and an outlet for a reaction gas; a suscepter positioned within the vacuum chamber to mount a wafer thereon, the suscepter having a wafer chuck at its upper surface to prevent the wafer from moving horizontally; a coil antenna surrounding the upper outer wall of the vacuum chamber; an RF generator for applying an RF power to the coil antenna; and a heating unit for heating the wafer mounted on the suscepter. Since the wafer 111 is heated in advance by the wafer heating unit, which is not proposed in the conventional HDP-CVD apparatus, the previously sputtered insulation material is restrained from re-depositing. Therefore, even though a gap has a high aspect ratio, it can be filled without a void.
摘要:
A high-permittivity dielectric capacitor and a fabrication method thereof are provided. The capacitor uses a tantalum oxynitride film as a high-permittivity dielectric film. The tantalum oxynitride film is deposited by chemical vapor deposition using tantalum ethoxide gas as a source of tantalum and oxygen and ammonia gas as a source of nitrogen. The tantalum oxynitride film has a high permittivity, a high thermal stability and a low interface heterogeneity between upper and lower electrodes. Thus, the current leakage due to oxygen vacancy in the film can be reduced.
摘要:
There are provided a high-strength hot-rolled steel sheet having excellent weather resistance used for containers and a method of manufacturing the same. A high-strength hot-rolled steel sheet having excellent weather resistance includes, by weight: C: 0.05 to 0.07%, Mn: 2.5% or less, Nb: 0.04 to 0.06%, Ti: 0.08 to 0.10%, Cu: 0.30 to 0.60%, Cr: 0.5 to 1.0%, and Ni: 0.15 to 0.30%, and the balance of Fe and other inevitable impurities. A method of manufacturing the hot-rolled steel sheet is also provided. A hot-rolled steel sheet provided has weather resistance by addition of Cu, Cr, and Ni and material characteristics of a tensile strength within the range of 800 to 900 MPa and a yield strength within the range of 700 to 800 MPa.
摘要:
A display apparatus and a control method thereof are provided. The display apparatus includes: a video processing unit which processes a first video; a display unit which displays the first video; a connecting unit which receives a second video of an image communication from a mobile communication terminal which enables the image communication; and a control unit which controls the video processing unit to process the second video of the image communication to display the second video in the display unit, and controls the mobile communication terminal based on a control command of a user.
摘要:
Provided is a method of manufacturing an evaporator for a loop heat pipe system including a condenser, a vapor transport line, and a liquid transport line, and more particularly, to a method of manufacturing an evaporator for a loop heat pipe system which provides a simple manufacturing process capable of improving a contact state between a sintered wick and a heating plate.
摘要:
The method of driving a liquid crystal display device includes calculating a brightness average value of pixel data of at least one frame period supplied to a liquid crystal display panel, and storing the average to a memory unit; generating a brightness control signal having a duty ratio according to the brightness average value of the pixel data adjusted taking variation of transmissivity with an angle of view into account in a white or black driving mode of the liquid crystal display panel; and supplying the brightness control signal to a light source unit.
摘要:
Disclosed is a demodulation method for enhancing decoding performance of information bits in a constant-amplitude multi-code biorthogonal modulation communication system, which performs encoding to cause the level of a transmission symbol to be constant.
摘要:
A memory card system, and a method of transmitting background information, in which the memory card system includes a host generating a background command; and a memory card providing the host with background information on whether the memory card supports a background operation, in response to the background command. Because the memory card system performs the background operation during an idle period, an operation of the memory card to be performed later can be prepared and an actual time for an operation such as read and write of the memory card can be reduced, so that performance of the memory card is considerably improved.
摘要:
The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate. In another aspect, the present invention discloses a semiconductor device fabricating apparatus including: a plurality of susceptors on which the same number of substrates are respectively mounted; a reaction chamber isolating all the substrates on the plurality of susceptors from an exterior condition; a plurality of vapor injection pipes disposed over the substrates, each vapor injection pipe relatively rotating with respect to the substrates and periodically applying a vapor substance onto each substrate; a plurality of exhausting portion each disposed near a corresponding susceptor to exhaust a remaining vapor substance out of the reaction chamber.
摘要:
A high vacuum apparatus for fabricating a semiconductor device includes a reactive chamber provided with an inlet and an outlet for a reactive gas, a suscepter installed in the reactive chamber for mounting the semiconductor thereon and a vacuum pump connected with the outlet to make the inside of the reactive chamber to put in a high vacuum state, wherein a gas injector of the reactive gas inlet is directed downward of the semiconductor device so that the initial gas flowing of the reactive gas injected from the reactive gas inlet does not directly pass the upper portion of the semiconductor substrate mounted on the suscepter. Since the reactive gas is prevented from cooling and condensing at the upper surface of the semiconductor substrate, defective proportion of the semiconductor device can be remarkably reduced. In addition, the gas outlet is installed at the portion where the reactive gas is satisfactorily cooled and condensed and the vacuum pump is connected with the gas outlet, so that the cooled and condensed contaminant generating source is quickly removed, and thus the defective proportion of the semiconductor device can be considerably reduced.