High density plasma chemical vapor deposition apparatus and gap filling method using the same
    11.
    发明授权
    High density plasma chemical vapor deposition apparatus and gap filling method using the same 有权
    高密度等离子体化学气相沉积装置和使用其的间隙填充方法

    公开(公告)号:US06514837B2

    公开(公告)日:2003-02-04

    申请号:US09801518

    申请日:2001-03-08

    IPC分类号: H01L2136

    摘要: A high density plasma chemical vapor deposition apparatus includes a vacuum chamber provided with an inlet and an outlet for a reaction gas; a suscepter positioned within the vacuum chamber to mount a wafer thereon, the suscepter having a wafer chuck at its upper surface to prevent the wafer from moving horizontally; a coil antenna surrounding the upper outer wall of the vacuum chamber; an RF generator for applying an RF power to the coil antenna; and a heating unit for heating the wafer mounted on the suscepter. Since the wafer 111 is heated in advance by the wafer heating unit, which is not proposed in the conventional HDP-CVD apparatus, the previously sputtered insulation material is restrained from re-depositing. Therefore, even though a gap has a high aspect ratio, it can be filled without a void.

    摘要翻译: 高密度等离子体化学气相沉积装置包括:真空室,设有反应气体的入口和出口; 位于真空室内以将晶片安装在其上的可变元件,所述可动元件在其上表面具有晶片卡盘,以防止晶片水平移动; 围绕真空室的上外壁的线圈天线; 用于向线圈天线施加RF功率的RF发生器; 以及加热装置,用于加热安装在所述容器上的所述晶片。 由于晶片111由传统的HDP-CVD装置中没有提出的晶片加热单元预先加热,所以抑制了先前溅射的绝缘材料的再沉积。 因此,即使间隙具有高纵横比,也可以填补空隙。

    High-permittivity dielectric capacitor for a semiconductor device and method for fabricating the same
    12.
    发明授权
    High-permittivity dielectric capacitor for a semiconductor device and method for fabricating the same 失效
    一种用于半导体器件的高介电电容器及其制造方法

    公开(公告)号:US06338995B1

    公开(公告)日:2002-01-15

    申请号:US09368210

    申请日:1999-08-04

    IPC分类号: H01L218242

    CPC分类号: H01L21/3145 H01L28/40

    摘要: A high-permittivity dielectric capacitor and a fabrication method thereof are provided. The capacitor uses a tantalum oxynitride film as a high-permittivity dielectric film. The tantalum oxynitride film is deposited by chemical vapor deposition using tantalum ethoxide gas as a source of tantalum and oxygen and ammonia gas as a source of nitrogen. The tantalum oxynitride film has a high permittivity, a high thermal stability and a low interface heterogeneity between upper and lower electrodes. Thus, the current leakage due to oxygen vacancy in the film can be reduced.

    摘要翻译: 提供了一种高介电常数介电电容器及其制造方法。 电容器使用氮氧化钽膜作为高介电常数介电膜。 氧化钽膜通过化学气相沉积法使用钽乙醇盐气体作为钽源和氧气和氨气作为氮源来沉积。 氮氧化钽膜具有高电容率,高热稳定性和上下电极之间的低界面异质性。 因此,可以降低由于膜中的氧空位导致的电流泄漏。

    WEATHER-RESISTANT HOT-ROLLED STEEL SHEET SUPERIOR HIGH-STRENGTH, AND MANUFACTURING METHOD
    13.
    发明申请
    WEATHER-RESISTANT HOT-ROLLED STEEL SHEET SUPERIOR HIGH-STRENGTH, AND MANUFACTURING METHOD 审中-公开
    耐高温热轧钢板超高强度和制造方法

    公开(公告)号:US20100092331A1

    公开(公告)日:2010-04-15

    申请号:US12520104

    申请日:2007-12-18

    CPC分类号: C22C38/42 C22C38/48 C22C38/50

    摘要: There are provided a high-strength hot-rolled steel sheet having excellent weather resistance used for containers and a method of manufacturing the same. A high-strength hot-rolled steel sheet having excellent weather resistance includes, by weight: C: 0.05 to 0.07%, Mn: 2.5% or less, Nb: 0.04 to 0.06%, Ti: 0.08 to 0.10%, Cu: 0.30 to 0.60%, Cr: 0.5 to 1.0%, and Ni: 0.15 to 0.30%, and the balance of Fe and other inevitable impurities. A method of manufacturing the hot-rolled steel sheet is also provided. A hot-rolled steel sheet provided has weather resistance by addition of Cu, Cr, and Ni and material characteristics of a tensile strength within the range of 800 to 900 MPa and a yield strength within the range of 700 to 800 MPa.

    摘要翻译: 提供了一种用于容器的耐候性优异的高强度热轧钢板及其制造方法。 优异的耐候性的高强度热轧钢板包括:C:0.05〜0.07%,Mn:2.5%以下,Nb:0.04〜0.06%,Ti:0.08〜0.10%,Cu:0.30〜 0.60%,Cr:0.5〜1.0%,Ni:0.15〜0.30%,余量为Fe等不可避免的杂质。 还提供了一种制造该热轧钢板的方法。 提供的热轧钢板通过添加Cu,Cr和Ni具有耐候性,并且拉伸强度的材料特性在800-900MPa的范围内,屈服强度在700-800MPa的范围内。

    DISPLAY APPARATUS AND CONTROL METHOD THEREOF
    14.
    发明申请
    DISPLAY APPARATUS AND CONTROL METHOD THEREOF 审中-公开
    显示装置及其控制方法

    公开(公告)号:US20100050224A1

    公开(公告)日:2010-02-25

    申请号:US12406698

    申请日:2009-03-18

    申请人: Chul-ju KIM

    发明人: Chul-ju KIM

    IPC分类号: H04N7/16 H04N5/66

    摘要: A display apparatus and a control method thereof are provided. The display apparatus includes: a video processing unit which processes a first video; a display unit which displays the first video; a connecting unit which receives a second video of an image communication from a mobile communication terminal which enables the image communication; and a control unit which controls the video processing unit to process the second video of the image communication to display the second video in the display unit, and controls the mobile communication terminal based on a control command of a user.

    摘要翻译: 提供了一种显示装置及其控制方法。 显示装置包括:处理第一视频的视频处理单元; 显示单元,显示第一视频; 连接单元,其从能够进行图像通信的移动通信终端接收图像通信的第二视频; 以及控制单元,其控制所述视频处理单元处理所述图像通信的第二视频以在所述显示单元中显示所述第二视频,并且基于用户的控制命令来控制所述移动通信终端。

    Lyquid crystal display device and driving method thereof
    16.
    发明申请
    Lyquid crystal display device and driving method thereof 有权
    液晶显示装置及其驱动方法

    公开(公告)号:US20090289962A1

    公开(公告)日:2009-11-26

    申请号:US12318056

    申请日:2008-12-19

    IPC分类号: G09G3/36 G09G5/10

    摘要: The method of driving a liquid crystal display device includes calculating a brightness average value of pixel data of at least one frame period supplied to a liquid crystal display panel, and storing the average to a memory unit; generating a brightness control signal having a duty ratio according to the brightness average value of the pixel data adjusted taking variation of transmissivity with an angle of view into account in a white or black driving mode of the liquid crystal display panel; and supplying the brightness control signal to a light source unit.

    摘要翻译: 驱动液晶显示装置的方法包括计算提供给液晶显示面板的至少一帧周期的像素数据的亮度平均值,并将平均值存储到存储单元; 根据在液晶显示面板的白色或黑色驱动模式下考虑到的考虑到的透视率变化而调整的像素数据的亮度平均值,生成亮度控制信号; 并将亮度控制信号提供给光源单元。

    MEMORY CARD SYSTEM AND METHOD FOR TRANSMITTING BACKGROUND INFORMATION THEREOF
    18.
    发明申请
    MEMORY CARD SYSTEM AND METHOD FOR TRANSMITTING BACKGROUND INFORMATION THEREOF 审中-公开
    用于发送其背景信息的记忆卡系统和方法

    公开(公告)号:US20080162479A1

    公开(公告)日:2008-07-03

    申请号:US11692510

    申请日:2007-03-28

    申请人: Won-Chul Ju

    发明人: Won-Chul Ju

    IPC分类号: G06F3/00

    摘要: A memory card system, and a method of transmitting background information, in which the memory card system includes a host generating a background command; and a memory card providing the host with background information on whether the memory card supports a background operation, in response to the background command. Because the memory card system performs the background operation during an idle period, an operation of the memory card to be performed later can be prepared and an actual time for an operation such as read and write of the memory card can be reduced, so that performance of the memory card is considerably improved.

    摘要翻译: 存储卡系统和发送背景信息的方法,其中存储卡系统包括生成背景命令的主机; 以及存储卡,以响应于背景命令向主机提供关于存储卡是否支持背景操作的背景信息。 由于存储卡系统在空闲期间执行后台操作,所以可以准备稍后执行的存储卡的操作,并且可以减少诸如存储卡的读取和写入之类的操作的实际时间,使得性能 的存储卡大大提高。

    Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors
    19.
    发明授权
    Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors 有权
    原子层沉积方法和具有可旋转气体喷射器的半导体器件制造装置

    公开(公告)号:US06634314B2

    公开(公告)日:2003-10-21

    申请号:US09927004

    申请日:2001-08-08

    IPC分类号: C23C1600

    摘要: The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate. In another aspect, the present invention discloses a semiconductor device fabricating apparatus including: a plurality of susceptors on which the same number of substrates are respectively mounted; a reaction chamber isolating all the substrates on the plurality of susceptors from an exterior condition; a plurality of vapor injection pipes disposed over the substrates, each vapor injection pipe relatively rotating with respect to the substrates and periodically applying a vapor substance onto each substrate; a plurality of exhausting portion each disposed near a corresponding susceptor to exhaust a remaining vapor substance out of the reaction chamber.

    摘要翻译: 本发明公开了一种ALD方法,其包括:将多个基板分别装载到多个反应池中,所述多个反应池设置在与外部条件隔离的反应室内; 交替地且重复地将各种蒸汽物质施加到每个基板上,使得在每个基板上形成薄膜,其中每个喷射一种蒸汽物质的多个蒸气喷射管周期性地扫描每个基板,以交替地和重复地将各种蒸气物质施加到 在另一方面,本发明公开了一种半导体器件制造装置,包括:多个基座,其上分别安装相同数量的基板; 反应室将多个基座上的所有基板与外部条件隔离; 多个蒸气喷射管,设置在所述基板上,每个蒸气喷射管相对于所述基板相对旋转并周期性地将蒸气物质施加到每个基板上; 多个排气部分,每个排放部分设置在相应的基座附近,以将剩余的蒸汽物质排出反应室。

    High vacuum apparatus for fabricating semiconductor device and method for forming epitaxial layer using the same
    20.
    发明授权
    High vacuum apparatus for fabricating semiconductor device and method for forming epitaxial layer using the same 失效
    用于制造半导体器件的高真空装置和使用其形成外延层的方法

    公开(公告)号:US06565655B2

    公开(公告)日:2003-05-20

    申请号:US09803859

    申请日:2001-03-12

    IPC分类号: C30B2514

    摘要: A high vacuum apparatus for fabricating a semiconductor device includes a reactive chamber provided with an inlet and an outlet for a reactive gas, a suscepter installed in the reactive chamber for mounting the semiconductor thereon and a vacuum pump connected with the outlet to make the inside of the reactive chamber to put in a high vacuum state, wherein a gas injector of the reactive gas inlet is directed downward of the semiconductor device so that the initial gas flowing of the reactive gas injected from the reactive gas inlet does not directly pass the upper portion of the semiconductor substrate mounted on the suscepter. Since the reactive gas is prevented from cooling and condensing at the upper surface of the semiconductor substrate, defective proportion of the semiconductor device can be remarkably reduced. In addition, the gas outlet is installed at the portion where the reactive gas is satisfactorily cooled and condensed and the vacuum pump is connected with the gas outlet, so that the cooled and condensed contaminant generating source is quickly removed, and thus the defective proportion of the semiconductor device can be considerably reduced.

    摘要翻译: 用于制造半导体器件的高真空装置包括设置有用于反应气体的入口和出口的反应室,安装在反应室中的用于将半导体安装在其上的阻塞器和与出口连接的真空泵, 所述反应室进入高真空状态,其中所述反应气体入口的气体喷射器被引导到所述半导体器件的下方,使得从所述反应气体入口喷射的反应气体的初始气体流不直接通过所述上部 的半导体衬底。 由于防止反应性气体在半导体衬底的上表面处冷却和冷凝,所以可以显着地减少半导体器件的不合格率。 此外,气体出口安装在反应气体被令人满意地冷却和冷凝的部分处,并且真空泵与气体出口连接,使得冷却和冷凝的污染物发生源被快速去除,因此,缺陷比例 可以大大减少半导体器件。