公开(公告)号：US08633423B2

公开(公告)日：2014-01-21

申请号：US13097822

申请日：2011-04-29

Applicant: Xing Lin ,  Douglas A. Buchberger, Jr. ,  Xiaoping Zhou ,  Valentin Todorow ,  Andrew Nguyen ,  Anchel Sheyner

Inventor： Xing Lin ,  Douglas A. Buchberger, Jr. ,  Xiaoping Zhou ,  Valentin Todorow ,  Andrew Nguyen ,  Anchel Sheyner

IPC: H05B1/00 ,  H01L21/683

CPC classification number: H05B6/105 ,  H01L21/67109 ,  H01L21/6831

Abstract: Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones.

Abstract translation: 本文提供了在处理期间控制基板的温度的方法和装置。 在一些实施例中，用于保持和控制衬底温度的装置可以包括电介质材料的圆盘; 设置在靠近所述圆盘的表面的所述圆盘中的电极，待保持基板的电极; 以及多个加热器元件，其布置在圆盘中并且布置成同心环以提供独立的温度控制区。

公开(公告)号：US08270141B2

公开(公告)日：2012-09-18

申请号：US12884967

申请日：2010-09-17

Applicant: Michael D. Willwerth ,  David Palagashvili ,  Douglas A. Buchberger, Jr. ,  Michael G. Chafin

Inventor： Michael D. Willwerth ,  David Palagashvili ,  Douglas A. Buchberger, Jr. ,  Michael G. Chafin

IPC: H02T23/00

CPC classification number: H01L21/6833 ,  Y10T279/23

Abstract: Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener.

Abstract translation: 本文提供了静电卡盘的实施例。 在一些实施例中，静电吸盘可以包括具有切口的上周边边缘的主体，该顶部边缘由垂直于主体侧壁的第一表面和设置在第一表面和主体上表面之间的阶梯状第二表面限定， 沿着第一面穿过身体; 多个紧固件，其布置成穿过所述多个孔，以将所述主体连接到设置在所述主体下方的底座; 设置在所述主体上表面上方的电介质部件，以静电保持基板; 绝缘体环，其围绕所述主体设置在所述凹口的上周边边缘内并且具有与所述阶梯状的第二表面配合的阶梯状的内侧壁，以在其间界定非线性界面; 以及设置在所述绝缘体环上的边缘环，所述非线性界面限制所述边缘环和所述紧固件之间的电弧。

公开(公告)号：US20120091108A1

公开(公告)日：2012-04-19

申请号：US13097822

申请日：2011-04-29

Applicant: XING LIN ,  DOUGLAS A. BUCHBERGER, Jr. ,  XIAOPING ZHOU ,  VALENTIN TODOROW ,  ANDREW NGUYEN ,  ANCHEL SHEYNER

Inventor： XING LIN ,  DOUGLAS A. BUCHBERGER, Jr. ,  XIAOPING ZHOU ,  VALENTIN TODOROW ,  ANDREW NGUYEN ,  ANCHEL SHEYNER

IPC: H05B1/00

CPC classification number: H05B6/105 ,  H01L21/67109 ,  H01L21/6831

Abstract: Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones.

Abstract translation: 本文提供了在处理期间控制基板的温度的方法和装置。 在一些实施例中，用于保持和控制衬底温度的装置可以包括电介质材料的圆盘; 设置在靠近所述圆盘的表面的所述圆盘中的电极，待保持基板的电极; 以及多个加热器元件，其布置在圆盘中并且布置成同心环以提供独立的温度控制区。

公开(公告)号：US08076247B2

公开(公告)日：2011-12-13

申请号：US11733770

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01L21/302

CPC classification number: C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

Abstract: A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.

Abstract translation: 提供了一种用于在等离子体反应器室中处理工件的方法。 该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。 该方法还包括提供边缘接地返回路径。 该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

公开(公告)号：US08021521B2

公开(公告)日：2011-09-20

申请号：US11408558

申请日：2006-04-21

Applicant: Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  Williams W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millian

Inventor： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  Williams W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millian

IPC: H01T23/00

CPC classification number: H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

Abstract: A method of processing a workpiece in a plasma reactor having an electrostatic chuck for holding a workpiece in a chamber of the reactor includes providing a thermally conductive gas under pressure between a backside of the workpiece and a top surface of the electrostatic chuck, controlling the temperature of the electrostatic chuck, defining a desired workpiece temperature, measuring a current workpiece temperature or temperature related to the workpiece temperature and inputting the measured temperature to a thermal model representative of the electrostatic chuck. The method further includes determining from the thermal model a change in the pressure of the thermally conductive gas that would at least reduce the difference between the measured temperature and the desired temperature, and changing the pressure of the thermally conductive gas in accordance with the change determined from the thermal model.

Abstract translation: 在具有用于将工件保持在反应器的室中的静电卡盘的等离子体反应器中处理工件的方法包括在工件的背面和静电卡盘的顶表面之间提供压力下的导热气体，控制温度 定义所需的工件温度，测量与工件温度相关的当前工件温度或温度，并将测量温度输入到表示静电吸盘的热模型。 该方法还包括根据热模型确定导热气体的压力变化，其将至少减小测量温度和期望温度之间的差异，以及根据确定的变化来改变导热气体的压力 从热模型。

公开(公告)号：US08012304B2

公开(公告)日：2011-09-06

申请号：US11408559

申请日：2006-04-21

Applicant: Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

Inventor： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC: H01L21/306 ,  C23C16/46 ,  C23C16/52

CPC classification number: H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer zone heat exchangers coupled to respective inner and outer zones of said electrostatic chuck. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.

Abstract translation: 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域 每当工件保持在表面上时形成的工件表面界面，以及联接到所述静电卡盘的相应内部和外部区域的内部和外部区域热交换器。 反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和 外部温度传感器。 耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度 传感器分别更接近所需的温度。

公开(公告)号：US07972467B2

公开(公告)日：2011-07-05

申请号：US10418996

申请日：2003-04-17

Applicant: Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, Jr.

Inventor： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, Jr.

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC classification number: H01J37/321 ,  H01J37/32633 ,  H01J37/3266

Abstract: An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.

Abstract translation: 一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。 在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。 每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

公开(公告)号：US20100319851A1

公开(公告)日：2010-12-23

申请号：US12855674

申请日：2010-08-12

Applicant: Douglas A. Buchberger, JR. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

Inventor： Douglas A. Buchberger, JR. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC: C23F1/08 ,  H01L21/306

CPC classification number: H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.

Abstract translation: 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于在选定压力下将导热气体施加到每次形成的工件表面界面中 工件被保持在表面上，蒸发器在静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。 反应器还包括静电卡盘中的温度传感器和存储RF功率或晶片温度变化计划的存储器。 反应器还包括热模型，其能够基于来自温度传感器的测量来模拟蒸发器和表面之间的热传递，以及耦合到热模型和存储器的控制处理器，并且响应于所述温度传感器控制背侧气体压力源 从所选压力的变化的模型中预测将补偿下一次调频的功率变化或实现下一个预定的晶片温度的变化。

公开(公告)号：US20100018648A1

公开(公告)日：2010-01-28

申请号：US12178032

申请日：2008-07-23

Applicant: KENNETH S. COLLINS ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Hiroji Hanawa ,  Jennifer Y. Sun ,  Andrew Nguyen ,  Thorsten B. Lill ,  Meihua Shen

Inventor： KENNETH S. COLLINS ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Hiroji Hanawa ,  Jennifer Y. Sun ,  Andrew Nguyen ,  Thorsten B. Lill ,  Meihua Shen

IPC: H01L21/3065

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32623 ,  H01J2237/2001 ,  H01L21/6833

Abstract: In an electrostatic chuck, RF bias power is separately applied to a workpiece and to a process kit collar surrounding the workpiece. At least one variable impedance element governed by a system controller adjusts the apportionment of RF bias power between the workpiece and the process kit collar, allowing dynamic adjustment of the plasma sheath electric field at the extreme edge of the workpiece, for optimum electric field uniformity under varying plasma conditions, for example.

Abstract translation: 在静电卡盘中，RF偏置功率分别施加到工件和围绕工件的处理套件套环。 由系统控制器控制的至少一个可变阻抗元件调节工件和工艺套件套环之间的RF偏置功率的分配，允许动态调整工件最末端处的等离子体护套电场，以获得最佳的电场均匀度 改变等离子体条件。

公开(公告)号：US07649729B2

公开(公告)日：2010-01-19

申请号：US11871807

申请日：2007-10-12

Applicant: Douglas A. Buchberger, Jr. ,  Paul Brillhart

Inventor： Douglas A. Buchberger, Jr. ,  Paul Brillhart

IPC: H02N13/00

CPC classification number: H01L21/6831 ,  H01L21/67109

Abstract: The present invention generally comprises an electrostatic chuck base, an electrostatic chuck assembly, and a puck for the electrostatic chuck assembly. Precisely etching a substrate within a plasma chamber may be a challenge because the plasma within the chamber may cause the temperature across the substrate to be non-uniform. A temperature gradient may exist across the substrate such that the edge of the substrate is at a different temperature compared to the center of the substrate. When the temperature of the substrate is not uniform, features may not be uniformly etched into the various layers of the structure disposed above the substrate. A dual zone electrostatic chuck assembly may compensate for temperature gradients across a substrate surface.

Abstract translation: 本发明通常包括静电卡盘基座，静电卡盘组件和用于静电卡盘组件的圆盘。 精确蚀刻等离子体室内的衬底可能是一个挑战，因为室内的等离子体可能导致衬底上的温度不均匀。 衬底上可能存在温度梯度，使得衬底的边缘与衬底的中心相比处于不同的温度。 当衬底的温度不均匀时，可能不能将特征均匀地蚀刻到设置在衬底上方的结构的各个层中。 双区域静电吸盘组件可以补偿穿过衬底表面的温度梯度。