Noise attenuation in passive seismic data
    11.
    发明授权
    Noise attenuation in passive seismic data 有权
    被动地震数据中的噪声衰减

    公开(公告)号:US08838392B2

    公开(公告)日:2014-09-16

    申请号:US12947144

    申请日:2010-11-16

    Abstract: Passive seismic data is collected from measurements of seismic sensors in respective sensor assemblies, where the passive seismic data is based on measurements collected during periods when no active seismic source was activated. Attenuation of surface noise in the passive seismic data is performed using data from divergence sensors in at least some of the sensor assemblies. The passive seismic data with surface noise attenuated is output to allow for performing an operation related to a subterranean structure using the passive seismic data with the surface noise attenuated.

    Abstract translation: 被动地震数据是从相应的传感器组件中的地震传感器的测量中收集的,其中被动地震数据基于在没有活动的地震源被激活的周期期间收集的测量。 在被动地震数据中的表面噪声的衰减是使用来自至少一些传感器组件中的发散传感器的数据进行的。 输出具有表面噪声衰减的被动地震数据,以允许使用具有衰减的表面噪声的被动地震数据来执行与地下结构有关的操作。

    Systems and methods for wireless network selection based on attributes stored in a network database
    12.
    发明授权
    Systems and methods for wireless network selection based on attributes stored in a network database 有权
    基于存储在网络数据库中的属性进行无线网络选择的系统和方法

    公开(公告)号:US08194589B2

    公开(公告)日:2012-06-05

    申请号:US12240969

    申请日:2008-09-29

    CPC classification number: H04W12/06 H04L63/0428 H04L63/08 H04L63/12

    Abstract: Systems and methods for wireless network selection based on attributes stored in a network database are disclosed. In some embodiments, a method comprises receiving a network identifier associated with a wireless network, determining if a network profile associated with the network identifier is stored within a network profile database comprising a plurality of network profiles, and if the network profile associated with the network identifier is stored within the network profile database, retrieving the network profile, or if the network profile associated with the network identifier is not stored within the network profile database, initiating the network profile, obtaining an attribute associated with the network device identifier, and storing the attribute within the network profile.

    Abstract translation: 公开了基于存储在网络数据库中的属性进行无线网络选择的系统和方法。 在一些实施例中,一种方法包括接收与无线网络相关联的网络标识符,确定与所述网络标识符相关联的网络配置文件是否存储在包括多个网络配置文件的网络配置文件数据库内,以及如果与所述网络相关联的网络配置文件 标识符存储在网络配置文件数据库中,检索网络配置文件,或者如果与网络标识符相关联的网络配置文件没有存储在网络配置文件数据库内,启动网络配置文件,获取与网络设备标识符相关联的属性,并存储 网络配置文件中的属性。

    SET1 proteins and uses thereof
    13.
    发明授权
    SET1 proteins and uses thereof 失效
    SET1蛋白及其用途

    公开(公告)号:US07838244B2

    公开(公告)日:2010-11-23

    申请号:US10594291

    申请日:2004-12-07

    CPC classification number: C07K14/31 C07K16/1271

    Abstract: The invention relates to methods of use of SET1 proteins or functional equivalents thereof. More particularly the invention relates to the use of SET1 proteins or functional equivalents thereof in procedure, for identification and/or isolation of IgA and the scrum complement factor C5.

    Abstract translation: 本发明涉及使用SET1蛋白或其功能等同物的方法。 更具体地,本发明涉及在程序中使用SET1蛋白或其功能等同物,用于鉴定和/或分离IgA和Scrum补体因子C5。

    Shielded structures to protect semiconductor devices
    14.
    发明授权
    Shielded structures to protect semiconductor devices 失效
    屏蔽结构,以保护半导体器件

    公开(公告)号:US07759774B2

    公开(公告)日:2010-07-20

    申请号:US11206435

    申请日:2005-08-17

    CPC classification number: H01L23/552 H01L23/5225 H01L2924/0002 H01L2924/00

    Abstract: An apparatus on a wafer, comprising; a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall comprising; one or more base frames, a fourth metal layer of the wall comprising; one or more vertical frame pairs each on top of the one or more base frames and having a pass-thru therein, a fifth metal layer of the wall comprising; one or more top frames each over the pass-thru; and a metal lid.

    Abstract translation: 一种晶片上的装置,包括: 壁的第一金属层,壁的第二金属层,壁的第三金属层,包括: 一个或多个基架,所述壁的第四金属层包括: 一个或多个垂直框架对,每个在所述一个或多个基架的顶部上并且具有穿过其中的第五金属层,所述第五金属层包括: 一个或多个顶部框架,每个超过通过; 和金属盖。

    Front-loading rack for displaying and first-in, first-out dispensing of products
    15.
    发明授权
    Front-loading rack for displaying and first-in, first-out dispensing of products 失效
    前置货架,用于展示和先进先出的产品分配

    公开(公告)号:US07690518B2

    公开(公告)日:2010-04-06

    申请号:US11778726

    申请日:2007-07-17

    CPC classification number: A47F1/12

    Abstract: A rack includes a loading chute into which products are loaded in a generally horizontal face-down orientation, and a dispensing chute defining a dispensing aperture at the front side of the rack. A cam is disposed at the rear end of the loading chute to tilt a product into an upright orientation and to position the upright product with the front face facing forward. The cam also slopes downwardly in a lateral direction so as to move the upright product onto the rear end of the dispensing ramp with the front face still facing forward. The product slides down the dispensing ramp and is stopped by a stop positioned adjacent the dispensing aperture. By virtue of the rack's design, facilitated by the specially designed cam, the upright product is positioned with its front face facing forward such that a consumer can view any indica thereon.

    Abstract translation: 产品包括加载斜槽,产品以大致水平的面朝下方向装载在该装载槽中,以及分配槽,其在机架的前侧限定分配孔。 凸轮设置在装载滑槽的后端,以将产品倾斜成垂直的方向,并且将正面朝向前方定位。 凸轮还在横向方向上向下倾斜,以将直立产品移动到分配斜面的后端,而前面仍面向前方。 产品沿着分配斜坡滑下,并通过邻近分配孔定位的止动件停止。 凭借由专门设计的凸轮促进的机架设计,直立产品的前表面朝前,使得消费者可以看到其上的任何烙印。

    Breathing assistance apparatus
    16.
    发明授权
    Breathing assistance apparatus 有权
    呼吸辅助器具

    公开(公告)号:US07308895B2

    公开(公告)日:2007-12-18

    申请号:US10518331

    申请日:2003-07-11

    CPC classification number: A61M16/06 A61M16/0616 A61M16/0622 A61M16/0638

    Abstract: A patient interface is described which is reduces the pressure of the mask on the users face. The patient interface has a sealing interface having an inner sealing member and an outer sealing member. The inner and outer sealing members are adapted to seal around the facial contours of a user providing a sealed fluid communication to the user's respiratory tract. The inner and outer sealing members are at least continuously in contact with each other around the portions where the sealing interface contacts the user's facial contours. The inner sealing member may be provided with cut outs to provide additional flexibility to particular areas, such as the nasal bridge, upper lip or cheek regions and may be provided with a contoured edge to better fit the facial contours of a user.

    Abstract translation: 描述了患者界面,其降低了使用者面部上的面罩的压力。 患者界面具有密封接口,其具有内部密封构件和外部密封构件。 内部和外部密封构件适于围绕用户的面部轮廓密封,从而提供与使用者的呼吸道的密封的流体连通。 内密封件​​和外密封件至少连续地接触密封界面接触使用者面部轮廓的部分。 内部密封构件可以设置有切口,以为特定区域(例如鼻梁,上唇或脸颊区域)提供额外的灵活性,并且可以设置有轮廓边缘以更好地适合使用者的面部轮廓。

    High dielectric constant metal oxide gate dielectrics
    18.
    发明申请
    High dielectric constant metal oxide gate dielectrics 失效
    高介电常数金属氧化物栅极电介质

    公开(公告)号:US20050087820A1

    公开(公告)日:2005-04-28

    申请号:US10646034

    申请日:2003-08-22

    Abstract: A method of forming a dielectric layer suitable for use as the gate dielectric layer of a metal-oxide-semiconductor field effect transistor (MOSFET) includes oxidizing the surface of a silicon substrate, forming a metal layer over the oxidized surface, and reacting the metal with the oxidized surface to form a substantially intrinsic layer of silicon superjacent the substrate, wherein at least a portion of the silicon layer may be an epitaxial silicon layer, and a metal oxide layer superjacent the silicon layer. In a further aspect of the present invention, an integrated circuit includes a plurality of MOSFETs, wherein various ones of the plurality of transistors have metal oxide gate dielectric layers and substantially intrinsic silicon layers subjacent the metal oxide dielectric layers.

    Abstract translation: 形成适合用作金属氧化物半导体场效应晶体管(MOSFET)的栅极电介质层的电介质层的方法包括氧化硅衬底的表面,在氧化表面上形成金属层,并使金属 与氧化表面形成超过衬底的基本上本征的硅层,其中硅层的至少一部分可以是外延硅层,以及位于硅层之上的金属氧化物层。 在本发明的另一方面,集成电路包括多个MOSFET,其中多个晶体管中的各个晶体管具有金属氧化物栅极电介质层和位于金属氧化物电介质层之下的基本上本征的硅层。

    Method of creating shielded structures to protect semiconductor devices
    19.
    发明授权
    Method of creating shielded structures to protect semiconductor devices 有权
    创建屏蔽结构以保护半导体器件的方法

    公开(公告)号:US06696369B2

    公开(公告)日:2004-02-24

    申请号:US09821323

    申请日:2001-03-28

    CPC classification number: H01L23/552 H01L23/5225 H01L2924/0002 H01L2924/00

    Abstract: An apparatus on a wafer, including; a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall including; one or more base frames, a fourth metal layer of the wall including; one or more vertical frame pairs each on top of the one or more base frames and having a pass-thru therein, a fifth metal layer of the wall including; one or more top frames each over the pass-thru; and a metal lid.

    Abstract translation: 一种晶片上的装置,包括: 壁的第一金属层,壁的第二金属层,壁的第三金属层,包括: 一个或多个基架,所述壁的第四金属层包括: 一个或多个垂直框架对,每个在一个或多个基架的顶部上并且具有穿过其中的第五金属层; 一个或多个顶部框架,每个超过通过; 和金属盖。

    Transition metal complexes having 2,2'-bipyridine ligands substituted by
at least one ammonium alkyl radical
    20.
    发明授权
    Transition metal complexes having 2,2'-bipyridine ligands substituted by at least one ammonium alkyl radical 失效
    具有被至少一个烷基铵取代的2,2'-联吡啶配体的过渡金属络合物

    公开(公告)号:US5410059A

    公开(公告)日:1995-04-25

    申请号:US166977

    申请日:1993-12-14

    Abstract: Complexes of the general formula I ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3, which may be the same or different, each represent a straight or branched alkyl radical having 1 to 5 carbon atoms or together with the adjacent nitrogen atom a heterocyclic radical having 5 to 7 carbon atoms; "alk" represents a straight or branched alkylene radical having 1 to 5 carbon atoms; R.sub.4 to R.sub.8, which may be the same or different, represent hydrogen, or a hydroxy, alkoxy, aryloxy or primary secondary or tertiary amino group, or the group -alk-N.sup.+ (R.sub.1 R.sub.2 R.sub.3) wherein "alk", R.sub.1, R.sub.2 and R.sub.3 have the meanings given above; M represents a transition metal such as Fe, Ru or Os; X represents an anion and n is an integer corresponding to the number of positive charges of the complex.

    Abstract translation: 通式I(I)的络合物其中R 1,R 2和R 3可以相同或不同,表示具有1至5个碳原子的直链或支链烷基或与相邻的氮原子一起形成杂环基 具有5至7个碳原子的基团; “alk”表示具有1至5个碳原子的直链或支链亚烷基; R 4至R 8可以相同或不同,表示氢或羟基,烷氧基,芳氧基或一级仲或叔氨基或-alk-N +(R 1 R 2 R 3),其中“alk”,R 1,R 2和R 3 具有上述含义; M表示Fe,Ru或Os等过渡金属; X表示阴离子,n是与络合物的正电荷数相对应的整数。

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