Abstract:
Passive seismic data is collected from measurements of seismic sensors in respective sensor assemblies, where the passive seismic data is based on measurements collected during periods when no active seismic source was activated. Attenuation of surface noise in the passive seismic data is performed using data from divergence sensors in at least some of the sensor assemblies. The passive seismic data with surface noise attenuated is output to allow for performing an operation related to a subterranean structure using the passive seismic data with the surface noise attenuated.
Abstract:
Systems and methods for wireless network selection based on attributes stored in a network database are disclosed. In some embodiments, a method comprises receiving a network identifier associated with a wireless network, determining if a network profile associated with the network identifier is stored within a network profile database comprising a plurality of network profiles, and if the network profile associated with the network identifier is stored within the network profile database, retrieving the network profile, or if the network profile associated with the network identifier is not stored within the network profile database, initiating the network profile, obtaining an attribute associated with the network device identifier, and storing the attribute within the network profile.
Abstract:
The invention relates to methods of use of SET1 proteins or functional equivalents thereof. More particularly the invention relates to the use of SET1 proteins or functional equivalents thereof in procedure, for identification and/or isolation of IgA and the scrum complement factor C5.
Abstract:
An apparatus on a wafer, comprising; a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall comprising; one or more base frames, a fourth metal layer of the wall comprising; one or more vertical frame pairs each on top of the one or more base frames and having a pass-thru therein, a fifth metal layer of the wall comprising; one or more top frames each over the pass-thru; and a metal lid.
Abstract:
A rack includes a loading chute into which products are loaded in a generally horizontal face-down orientation, and a dispensing chute defining a dispensing aperture at the front side of the rack. A cam is disposed at the rear end of the loading chute to tilt a product into an upright orientation and to position the upright product with the front face facing forward. The cam also slopes downwardly in a lateral direction so as to move the upright product onto the rear end of the dispensing ramp with the front face still facing forward. The product slides down the dispensing ramp and is stopped by a stop positioned adjacent the dispensing aperture. By virtue of the rack's design, facilitated by the specially designed cam, the upright product is positioned with its front face facing forward such that a consumer can view any indica thereon.
Abstract:
A patient interface is described which is reduces the pressure of the mask on the users face. The patient interface has a sealing interface having an inner sealing member and an outer sealing member. The inner and outer sealing members are adapted to seal around the facial contours of a user providing a sealed fluid communication to the user's respiratory tract. The inner and outer sealing members are at least continuously in contact with each other around the portions where the sealing interface contacts the user's facial contours. The inner sealing member may be provided with cut outs to provide additional flexibility to particular areas, such as the nasal bridge, upper lip or cheek regions and may be provided with a contoured edge to better fit the facial contours of a user.
Abstract:
An apparatus on a wafer, comprising; a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall comprising; one or more base frames, a fourth metal layer of the wall comprising; one or more vertical frame pairs each on top of the one or more base frames and having a pass-thru therein, a fifth metal layer of the wall comprising; one or more top frames each over the pass-thru; and a metal lid.
Abstract:
A method of forming a dielectric layer suitable for use as the gate dielectric layer of a metal-oxide-semiconductor field effect transistor (MOSFET) includes oxidizing the surface of a silicon substrate, forming a metal layer over the oxidized surface, and reacting the metal with the oxidized surface to form a substantially intrinsic layer of silicon superjacent the substrate, wherein at least a portion of the silicon layer may be an epitaxial silicon layer, and a metal oxide layer superjacent the silicon layer. In a further aspect of the present invention, an integrated circuit includes a plurality of MOSFETs, wherein various ones of the plurality of transistors have metal oxide gate dielectric layers and substantially intrinsic silicon layers subjacent the metal oxide dielectric layers.
Abstract:
An apparatus on a wafer, including; a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall including; one or more base frames, a fourth metal layer of the wall including; one or more vertical frame pairs each on top of the one or more base frames and having a pass-thru therein, a fifth metal layer of the wall including; one or more top frames each over the pass-thru; and a metal lid.
Abstract:
Complexes of the general formula I ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3, which may be the same or different, each represent a straight or branched alkyl radical having 1 to 5 carbon atoms or together with the adjacent nitrogen atom a heterocyclic radical having 5 to 7 carbon atoms; "alk" represents a straight or branched alkylene radical having 1 to 5 carbon atoms; R.sub.4 to R.sub.8, which may be the same or different, represent hydrogen, or a hydroxy, alkoxy, aryloxy or primary secondary or tertiary amino group, or the group -alk-N.sup.+ (R.sub.1 R.sub.2 R.sub.3) wherein "alk", R.sub.1, R.sub.2 and R.sub.3 have the meanings given above; M represents a transition metal such as Fe, Ru or Os; X represents an anion and n is an integer corresponding to the number of positive charges of the complex.
Abstract translation:通式I(I)的络合物其中R 1,R 2和R 3可以相同或不同,表示具有1至5个碳原子的直链或支链烷基或与相邻的氮原子一起形成杂环基 具有5至7个碳原子的基团; “alk”表示具有1至5个碳原子的直链或支链亚烷基; R 4至R 8可以相同或不同,表示氢或羟基,烷氧基,芳氧基或一级仲或叔氨基或-alk-N +(R 1 R 2 R 3),其中“alk”,R 1,R 2和R 3 具有上述含义; M表示Fe,Ru或Os等过渡金属; X表示阴离子,n是与络合物的正电荷数相对应的整数。