公开(公告)号：US20110001732A1

公开(公告)日：2011-01-06

申请号：US12735771

申请日：2008-10-22

申请人： Hideki Morii ,  Akihisa Iwamoto ,  Takayuki Mizunaga ,  Yuuki Ohta ,  Masahiro Hirokane ,  Shinya Tanaka ,  Hajime Imai ,  Tetsuo Kikuchi

发明人： Hideki Morii ,  Akihisa Iwamoto ,  Takayuki Mizunaga ,  Yuuki Ohta ,  Masahiro Hirokane ,  Shinya Tanaka ,  Hajime Imai ,  Tetsuo Kikuchi

IPC分类号： G09G5/00 ,  G11C19/36

CPC分类号： G09G3/3677 ,  G09G2300/0408 ,  G09G2300/0417 ,  G09G2310/0286 ,  G09G2310/08 ,  G11C19/28

摘要： In at least one embodiment, each of stages connected in cascade includes a first circuit which causes a predetermined section in a corresponding one of the stages to be connected to a low-potential power source, the first circuit being constituted by TFTs, a first type of clock signal being used as a signal which is transferred to an output terminal of each of the stages so as to be outputted as an output signal, a second type of clock signal being used as a signal which drives the first circuit. With the arrangement, it is possible to realize a shift register circuit that is capable of further suppressing a shift phenomenon of a threshold voltage in each of the TFTs.

摘要翻译： 在至少一个实施例中，级联连接的每个级包括第一电路，其使相应级中的预定部分连接到低电位电源，第一电路由TFT构成，第一类型 时钟信号被用作被传送到每个级的输出端的信号，以作为输出信号输出，第二类型的时钟信号用作驱动第一电路的信号。 通过该结构，可以实现能够进一步抑制各TFT的阈值电压的偏移现象的移位寄存器电路。

公开(公告)号：US20100118238A1

公开(公告)日：2010-05-13

申请号：US12524914

申请日：2007-12-10

申请人： Junya Shimada ,  Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Mitsunori Imade ,  Yoshihito Hara

发明人： Junya Shimada ,  Hajime Imai ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Mitsunori Imade ,  Yoshihito Hara

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133345 ,  G02F1/133553 ,  G02F1/1362 ,  G02F2202/10

摘要： Reflection-type and transflective-type liquid crystal display devices having a high image quality, in which moiré or coloration is reduced, are provided at low cost.A liquid crystal display device according to the present invention is a liquid crystal display device having a reflection region in each of a plurality of pixels; the reflection region includes a metal layer, a semiconductor layer, and a reflective layer; a plurality of recesses and protrusions are formed on the surface of the reflective layer; the plurality of recesses are formed according to apertures in the metal layer; the plurality of protrusions are formed so as to conform to the shape of the semiconductor layer; a plurality of pairs among the plurality of recesses that adjoin along a direction include two pairs whose intervals between recesses are different from each other; and a plurality of pairs among the plurality of protrusions that adjoin along a direction include two pairs whose intervals between protrusions are different from each other.

摘要翻译： 以低成本提供了具有高图像质量的莫尔或着色降低的反射型和半透射型液晶显示装置。 根据本发明的液晶显示装置是在多个像素中的每一个具有反射区域的液晶显示装置; 反射区域包括金属层，半导体层和反射层; 在反射层的表面上形成多个凹凸， 所述多个凹部根据所述金属层中的孔而形成; 多个突起形成为符合半导体层的形状; 在沿着一个方向邻接的多个凹部中的多对，包括凹槽间的间隔彼此不同的两对; 并且沿着一个方向邻接的多个突起之间的多对，包括两个突起之间的间隔彼此不同的两对。

公开(公告)号：US07405365B2

公开(公告)日：2008-07-29

申请号：US10664158

申请日：2003-09-17

申请人： Hajime Imai ,  Osamu Sugimoto ,  Katsuhiro Okada ,  Isao Ogasawara

发明人： Hajime Imai ,  Osamu Sugimoto ,  Katsuhiro Okada ,  Isao Ogasawara

IPC分类号： H05K1/16

CPC分类号： G02F1/136204 ,  H01J2211/46 ,  H01L27/12 ,  H01L27/124 ,  H01L51/5203 ,  Y10T29/49165

摘要： A wiring substrate of the present invention includes a short ring (SR) formed along a periphery of the substrate, an independent line pattern (e.g., a gate terminal) that is coplanar with and independent of SR, a continuous line pattern (e.g., a storage capacitor stem) that is located closest to the independent line pattern and is coplanar and continuous with SR, and an insulating film covering the independent line pattern and the continuous line pattern. The insulating film includes a first through hole reaching the independent line pattern and a second through hole reaching the continuous line pattern.

摘要翻译： 本发明的布线基板包括沿着基板的周边形成的短环（SR），与SR共面且独立于SR的独立线图案（例如，栅极端子），连续线图案（例如， 存储电容器杆），其最靠近独立线图案并且与SR共面且连续，以及覆盖独立线图案和连续线图案的绝缘膜。 绝缘膜包括到达独立线图案的第一通孔和达到连续线图案的第二通孔。

公开(公告)号：US06862070B1

公开(公告)日：2005-03-01

申请号：US10730622

申请日：2003-12-05

申请人： Osamu Sugimoto ,  Hajime Imai

发明人： Osamu Sugimoto ,  Hajime Imai

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1343

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286

摘要： An protective film and a resin layer are stacked on an insulation substrate on which a TFT is formed, and after a contact hole is formed in the resin layer, the protective film below the contact hole is etched and removed. A pixel display electrode is allowed to contact a drain electrode at the area of the contact hole; thus, a liquid crystal display is formed. A cut-out section, which communicates with the lower layer is formed in the drain electrode in the area of the contact hole. Upon forming a TFT section island-shape semiconductor layer so as to provide a TFT, a hole section island-shape semiconductor layer is also formed in the area of the contact hole. With this arrangement, it is possible to provide a manufacturing method of a liquid crystal display which can avoid the occurrence of a step discontinuity in the pixel display electrode and the subsequent disconnection in the pixel display electrode.

摘要翻译： 保护膜和树脂层层叠在其上形成有TFT的绝缘基板上，并且在树脂层中形成接触孔之后，蚀刻除去接触孔下方的保护膜。 允许像素显示电极在接触孔的区域处接触漏电极; 从而形成液晶显示器。 在接触孔的区域中的漏电极中形成有与下层连通的切口部。 在形成TFT部分岛状半导体层以提供TFT时，在接触孔的区域中也形成孔部分岛状半导体层。 通过这种布置，可以提供一种液晶显示器的制造方法，其可以避免像素显示电极中的步长不连续的发生和随后的像素显示电极的断开。

公开(公告)号：US06771346B2

公开(公告)日：2004-08-03

申请号：US09737541

申请日：2000-12-15

申请人： Osamu Sugimoto ,  Hajime Imai

发明人： Osamu Sugimoto ,  Hajime Imai

IPC分类号： G02F11345

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286

摘要： An protective film and a resin layer are stacked on an insulation substrate on which a TFT is formed, and after a contact hole is formed in the resin layer, the protective film below the contact hole is etched and removed. A pixel display electrode is allowed to contact a drain electrode at the area of the contact hole; thus, a liquid crystal display is formed. A cut-out section, which communicates with the lower layer is formed in the drain electrode in the area of the contact hole. Upon forming a TFT section island-shape semiconductor layer so as to provide a TFT, a hole section island-shape semiconductor layer is also formed in the area of the contact hole. With this arrangement, it is possible to provide a manufacturing method of a liquid crystal display which can avoid the occurrence of a step discontinuity in the pixel display electrode and the subsequent disconnection in the pixel display electrode.

摘要翻译： 保护膜和树脂层层叠在其上形成有TFT的绝缘基板上，并且在树脂层中形成接触孔之后，蚀刻除去接触孔下方的保护膜。 允许像素显示电极在接触孔的区域处接触漏电极; 从而形成液晶显示器。 在接触孔的区域中的漏电极中形成有与下层连通的切口部。 在形成TFT部分岛状半导体层以提供TFT时，在接触孔的区域中也形成孔部分岛状半导体层。 通过这种布置，可以提供一种液晶显示器的制造方法，其可以避免像素显示电极中的步长不连续的发生和随后的像素显示电极的断开。

公开(公告)号：US4435443A

公开(公告)日：1984-03-06

申请号：US389916

申请日：1982-06-18

申请人： Hajime Imai ,  Masahiro Morimoto ,  Takao Fujiwara

发明人： Hajime Imai ,  Masahiro Morimoto ,  Takao Fujiwara

IPC分类号： C23C14/04 ,  C23C14/22 ,  C23C14/34 ,  H01L21/31 ,  H01L31/0216 ,  H01L31/18 ,  B05D3/06 ,  C23C17/00

CPC分类号： C23C14/225 ,  C23C14/04 ,  C23C14/34 ,  H01L21/31 ,  H01L31/02161 ,  H01L31/18 ,  H01L31/1844 ,  H01L31/186 ,  Y02E10/544 ,  Y02P70/521

摘要： A method for forming a protecting film on the side walls of a semiconductor device, e.g. a semiconductor laser, having an exposed PN junction at the side walls thereof is carried out by the following steps. The semiconductor device is placed on a substrate target made of a protecting film material. Energetic particles are impinged against the substrate target. Particles of the material are emitted from the substrate target and deposited on only the side walls to form the protecting film.

公开(公告)号：US08717334B2

公开(公告)日：2014-05-06

申请号：US13258868

申请日：2009-10-27

申请人： Atsuhito Murai ,  Yoshiharu Kataoka ,  Takuya Watanabe ,  Hajime Imai ,  Hideki Kitagawa

发明人： Atsuhito Murai ,  Yoshiharu Kataoka ,  Takuya Watanabe ,  Hajime Imai ,  Hideki Kitagawa

IPC分类号： G06F3/041

CPC分类号： G06F3/042 ,  G02F1/13338 ,  G02F2001/13312 ,  G06F3/0412 ,  G06F3/0414

摘要： A display device includes: an optical sensor circuit provided in a display region, the optical sensor circuit including a light-receiving element and detecting intensity of light incident to the light-receiving element; and a pressure detection circuit which detects pressure applied to a display surface of a display panel on a basis of a change of the display surface in a panel thickness direction which change is caused by the pressure, with respect to a region in which the pressure is to be detected, both of the detection of the pressure by the pressure detection circuit and the detection of the intensity of the light by the optical sensor circuit being carried out within a period allocated to acquisition of detection data concerning the pressure in the display region.

摘要翻译： 显示装置包括：设置在显示区域的光学传感器电路，所述光学传感器电路包括光接收元件，并检测入射到所述光接收元件的光的强度; 以及压力检测电路，其基于显示面在面板厚度方向上的变化来检测施加到显示面板的显示面上的压力，所述变化是由压力引起的，相对于压力为 要被检测时，通过压力检测电路的压力检测和由光学传感器电路检测光的强度在分配用于获取关于显示区域内的压力的检测数据的时间段内执行。

公开(公告)号：US20120250033A1

公开(公告)日：2012-10-04

申请号：US13512946

申请日：2010-11-05

申请人： Hideki Kitagawa ,  Takuya Watanabe ,  Hajime Imai ,  Yukihiko Nishiyama ,  Atsuhito Murai ,  Kazunori Morimoto

发明人： Hideki Kitagawa ,  Takuya Watanabe ,  Hajime Imai ,  Yukihiko Nishiyama ,  Atsuhito Murai ,  Kazunori Morimoto

IPC分类号： G01B11/14

CPC分类号： G06F3/0428

摘要： An optical sensor circuit in accordance with the present invention detects, based on a change in the amount of light received when a pointer (P) is placed in a coordinate detection area (2) through which light from a light source (3) passes, coordinates of a position of the pointer (3) in the coordinate detection area (2). A first optical sensor circuit including an optical sensor element (41), which receives a larger amount of light due to its position relative to the light source (3), has a first wire to which a refresh signal (Shield_A) is supplied, the refresh signal (Shield_A) initializing a threshold characteristic that determines light sensitivity of the optical sensor element (41); whereas a second optical sensor circuit including an optical sensor element (42), which receives a smaller amount of light, has a second wire to which a refresh signal (Shield_B) is supplied independently of the refresh signal (Shield_A), the refresh signal (Shield_B) initializing a threshold characteristic of the optical element (42).

摘要翻译： 根据本发明的光学传感器电路基于当将指示器（P）放置在来自光源（3）的光通过的坐标检测区域（2）中时接收的光量的变化来检测， 坐标检测区域（2）中的指针（3）的位置的坐标。 包括由于其相对于光源（3）的位置而接收更大量的光的光学传感器元件（41）的第一光学传感器电路具有提供刷新信号（Shield_A）的第一布线， 刷新信号（Shield_A）初始化确定光学传感器元件（41）的光灵敏度的阈值特性; 而包括接收较少光量的光学传感器元件（42）的第二光学传感器电路具有第二导线，独立于刷新信号（Shield_A）提供刷新信号（Shield_B），刷新信号（Shield_A），刷新信号 Shield_B）初始化光学元件（42）的阈值特性。

公开(公告)号：US20120241768A1

公开(公告)日：2012-09-27

申请号：US13508045

申请日：2010-06-25

申请人： Atsuhito Murai ,  Kazunori Morimoto ,  Yukihiko Nishiyama ,  Hajime Imai ,  Hideki Kitagawa

发明人： Atsuhito Murai ,  Kazunori Morimoto ,  Yukihiko Nishiyama ,  Hajime Imai ,  Hideki Kitagawa

IPC分类号： H01L27/146 ,  H01L31/113

CPC分类号： G06F3/0412 ,  G06F3/0416 ,  G06F3/042

摘要： An optical sensor circuit (20) includes a transistor (20c) and a transistor (20d). The transistor (20c) is connected in series with the transistor (20d). The transistor (20d) is configured to receive light. A black matrix is provided so as to face the transistor (20c). A voltage generated at a connecting point (i.e., node (netB)) of the transistor (20d) and the transistor (20c) varies depending on intensity of light received via the transistor (20d).

摘要翻译： 光传感器电路（20）包括晶体管（20c）和晶体管（20d）。 晶体管（20c）与晶体管（20d）串联连接。 晶体管（20d）被配置为接收光。 提供黑矩阵以面对晶体管（20c）。 在晶体管（20d）和晶体管（20c）的连接点（即，节点（netB））处产生的电压根据经由晶体管（20d）接收的光的强度而变化。

公开(公告)号：US20120019496A1

公开(公告)日：2012-01-26

申请号：US13258775

申请日：2009-10-27

申请人： Atsuhito Murai ,  Yoshiharu Kataoka ,  Takuya Watanabe ,  Hajime Imai ,  Hideki Kitagawa

发明人： Atsuhito Murai ,  Yoshiharu Kataoka ,  Takuya Watanabe ,  Hajime Imai ,  Hideki Kitagawa

IPC分类号： G09G5/00 ,  H01L31/0368 ,  H01L29/786 ,  H01L31/0376

CPC分类号： G01J1/46 ,  G01J1/0209 ,  G01J1/0228 ,  G02F1/13338 ,  G02F2001/13312 ,  H01L27/12 ,  H01L27/14612 ,  H01L27/14692

摘要： A field-effect transistor (62a) has a back gate (62ag2). The back gate (62ag2), a cathode of a photodiode (62b), and a first end of a first capacitor (62c) are connected with each other via a first node (netA). An anode of the photodiode (62b) is connected with a first line (Vrst). A second end of the first capacitor (62c) is connected with a second line (Csn). A gate (62ag1) of the field-effect transistor (62a) is connected with a third line (Vrwn), and a drain of the filed-effect transistor (62a) is connected with a fourth line (Vsm). A source of the field-effect transistor (62a) is an output of an output amplifier (62a).

摘要翻译： 场效应晶体管（62a）具有背栅（62ag2）。 背栅（62ag2），光电二极管（62b）的阴极和第一电容器（62c）的第一端经由第一节点（netA）彼此连接。 光电二极管（62b）的阳极与第一线（Vrst）连接。 第一电容器（62c）的第二端与第二线（Csn）连接。 场效应晶体管（62a）的栅极（62ag1）与第三线（Vrwn）连接，并且场效应晶体管（62a）的漏极与第四线（Vsm）连接。 场效应晶体管（62a）的源极是输出放大器（62a）的输出。