公开(公告)号：US09450439B2

公开(公告)日：2016-09-20

申请号：US14237909

申请日：2012-06-13

申请人： Hiroo Hongo ,  Koji Kudo ,  Kenichi Ishii ,  Kenji Kobayashi ,  Takayuki Nyu

发明人： Hiroo Hongo ,  Koji Kudo ,  Kenichi Ishii ,  Kenji Kobayashi ,  Takayuki Nyu

IPC分类号： H02J7/00 ,  H01M10/44 ,  H01M4/505 ,  H01M10/052 ,  H01M10/42

CPC分类号： H02J7/0068 ,  H01M4/505 ,  H01M10/052 ,  H01M10/44 ,  H01M2010/4271 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011

摘要： A secondary battery has a progressively deteriorating SOC in which battery performance deteriorates when the secondary battery is stored, and is charged and discharged by a control device. An information processing device stores a preset first threshold smaller than the progressively deteriorating SOC of the secondary battery and a preset second threshold greater than the progressively deteriorating SOC, and separates the range from the minimum SOC to the maximum SOC of the secondary battery into, at least, two regions by setting the section from the first threshold to the second threshold as a boundary to thereby cause the control device to charge or discharge the secondary battery within any of the above regions.

摘要翻译： 二次电池在存储二次电池时电池性能恶化的SOC逐渐恶化，并且通过控制装置进行充放电。 信息处理装置存储比二次电池的逐渐劣化的SOC小的预设的第一阈值和大于逐渐恶化的SOC的预设的第二阈值，并且将从最小SOC到最小SOC的范围分离成 至少两个区域通过将从第一阈值到第二阈值的部分设置为边界，从而使得控制装置在任何上述区域内对二次电池进行充电或放电。

公开(公告)号：US20130154348A1

公开(公告)日：2013-06-20

申请号：US13817950

申请日：2011-08-04

申请人： Hiroo Hongo ,  Masaki Yasukawa

发明人： Hiroo Hongo ,  Masaki Yasukawa

IPC分类号： H04B3/54

CPC分类号： H04B3/54 ,  G08C17/00 ,  G08C2201/10 ,  H02J13/0024 ,  Y02E60/7823 ,  Y02E60/7884 ,  Y04S40/122 ,  Y04S40/143

摘要： A center device performing power feed control generates a control signal for controlling supply and suspension of power to a main load of a remote terminal and transmits the control signal by superimposing the control signal on the power to be supplied to the remote terminal. The remote terminal includes a power-receiving side unit, a switch that connects the power-receiving side unit with the main load when the switch is on and disconnects the power-receiving side unit from the main load when the switch is off, and a control signal receiver that receives the control signal superimposed on the power transmitted from the center device to turns the switch on or off in accordance with the control signal received at the control signal receiver.

摘要翻译： 执行供电控制的中心装置产生用于控制对远程终端的主负荷的供电和暂停的控制信号，并且通过将控制信号叠加在要提供给远程终端的电力上来发送控制信号。 远程终端包括受电侧单元，当开关接通时将受电侧单元与主负载连接的开关，并且在开关断开时将受电侧单元与主负载断开，并且 控制信号接收器，其接收叠加在从中央设备发送的电力上的控制信号，以根据在控制信号接收器处接收的控制信号来接通或关断开关。

公开(公告)号：US20130009485A1

公开(公告)日：2013-01-10

申请号：US13636139

申请日：2011-02-14

申请人： Hisato Sakuma ,  Koji Kudo ,  Hiroo Hongo ,  Ryosuke Kuribayashi

发明人： Hisato Sakuma ,  Koji Kudo ,  Hiroo Hongo ,  Ryosuke Kuribayashi

IPC分类号： H02J3/28

CPC分类号： H02J3/32 ,  Y10T307/702

摘要： In a predetermined interval, electric power that is generated by power-source equipment is charged to a storage device and the amount of electric power that is accumulated in the storage device is reported from a communication device to a device that is provided to an electric power provider or a consumer. After the passage of a predetermined time interval, the amount of electric power that was previously reported to the device that is provided to the electric power provider or the consumer is discharged from the storage device and supplied to the electric power distribution system.

摘要翻译： 在预定间隔内，由电力设备产生的电力被充电到存储装置，并且从通信装置向蓄电装置蓄积的电力量报告给提供给电力的装置 提供者或消费者。 在经过预定时间间隔之后，先前向提供给电力供应商或消费者的装置报告的电力量从存储装置中排出并提供给配电系统。

公开(公告)号：US20100111505A1

公开(公告)日：2010-05-06

申请号：US12451005

申请日：2008-04-16

申请人： Hiroo Hongo

发明人： Hiroo Hongo

IPC分类号： H04N5/00 ,  H01L33/00 ,  H01L27/02 ,  H01L29/786 ,  H04N5/222 ,  H04N5/44 ,  G09G5/00

CPC分类号： H01L29/78645 ,  H01L27/124

摘要： A field-effect type transistor has: a source electrode; a drain electrode being a metal electrode; a semiconductor layer provided to be in contact with both of the source electrode and the drain electrode; and a gate electrode provided to face at least a part of the semiconductor layer. The gate electrode has: a first gate electrode; and a second gate electrode provided closer to the drain electrode than the first gate electrode is. The second gate electrode is so connected as to have a same potential as the drain electrode and is electrically isolated from the first gate electrode. Consequently, in a display device, the off-leakage current is suppressed, and reduction in a pixel area and a bus interconnection width is suppressed.

摘要翻译： 场效应型晶体管具有：源电极; 漏电极是金属电极; 设置成与源极电极和漏极电极接触的半导体层; 以及设置成面对所述半导体层的至少一部分的栅电极。 栅电极具有：第一栅电极; 并且比第一栅电极更靠近漏电极设置的第二栅电极。 第二栅电极被连接成具有与漏电极相同的电位，并与第一栅极电隔离。 因此，在显示装置中，抑制了泄漏电流，并且抑制了像素区域和总线互连宽度的减小。

公开(公告)号：US20070104892A1

公开(公告)日：2007-05-10

申请号：US10564750

申请日：2004-07-20

申请人： Masahiko Ishida ,  Hiroo Hongo ,  Jun-ichi Fujita

发明人： Masahiko Ishida ,  Hiroo Hongo ,  Jun-ichi Fujita

IPC分类号： H05H1/24

CPC分类号： H01L21/321 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/06 ,  C01B2202/36 ,  G03F7/0047 ,  H01L21/76876 ,  H01L2221/1094

摘要： A metal fine particle is adhere to a predetermined location on a substrate. A resist film containing a metallic compound dispersed therein is formed on a substrate (101). A patterning of the resist film is conducted by a lithography. The substrate (101) having the patterned resist formed thereon is heated within an oxygen atmosphere to adhere a metal fine particle (106) to the surface of the substrate (101), while removing the resin in the patterned resist.

摘要翻译： 金属微粒附着在基板上的规定位置。 在基板（101）上形成含有分散在其中的金属化合物的抗蚀剂膜。 抗蚀剂膜的图案化通过光刻进行。 其中形成有图案化抗蚀剂的衬底（101）在氧气氛中被加热，以将金属微粒（106）粘附到衬底（101）的表面，同时去除图案化抗蚀剂中的树脂。

公开(公告)号：US20060240974A1

公开(公告)日：2006-10-26

申请号：US10523418

申请日：2003-07-28

申请人： Hiroo Hongo

发明人： Hiroo Hongo

IPC分类号： B01J29/04

CPC分类号： B82Y30/00 ,  B01J21/04 ,  B01J21/06 ,  B01J21/063 ,  B01J23/16 ,  B01J23/46 ,  B01J23/70 ,  B01J23/745 ,  B01J35/0006 ,  B01J37/0018 ,  B01J37/024 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  H01L51/0048 ,  H01L51/0052 ,  Y10S438/903 ,  Y10S977/742 ,  Y10S977/75

摘要： A catalyst supporting substrate includes a first region (54) which is formed on a substrate (50); and a second region (55) which is formed covering a part of the first region. The first region (54) includes a catalyst supporting portion (54a) containing a first material. The second region (55) includes a catalyst portion (55) containing a second material which is different from the first material. The first material includes a metal containing at least one of elements selected from the second group to the fourteenth group of the periodic table or a compound thereof. The second material is a catalyst which grows carbon nanotubes in a vapor phase.

摘要翻译： 催化剂支撑基板包括形成在基板（50）上的第一区域（54）; 以及形成为覆盖所述第一区域的一部分的第二区域（55）。 第一区域（54）包括含有第一材料的催化剂支撑部分（54a）。 第二区域（55）包括含有与第一材料不同的第二材料的催化剂部分（55）。 第一材料包括含有选自周期表第二组至第十四组中的至少一种元素的金属或其化合物。 第二种材料是在气相中生长碳纳米管的催化剂。

公开(公告)号：US20060091557A1

公开(公告)日：2006-05-04

申请号：US10536993

申请日：2003-12-01

申请人： Toshitsugu Sakamoto ,  Hisao Kawaura ,  Toshio Baba ,  Fumiyuki Nihey ,  Yukinori Ochiai ,  Hiroo Hongo

发明人： Toshitsugu Sakamoto ,  Hisao Kawaura ,  Toshio Baba ,  Fumiyuki Nihey ,  Yukinori Ochiai ,  Hiroo Hongo

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/76838 ,  B82Y10/00 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： There has been a problem that micromiaturization causes increase of the resistance of wiring structure and degradation of electron migration resistance and stress migration resistance. The present invention provides a wiring structure of a semiconductor device having a low resistance even when the semiconductor device is microminiaturized, free of electron migration and stress migration, and having a high reliability and a method for manufacturing the same. A semiconductor device having a wiring or a connection plug made of a mixture of a metal and carbon nanotubes berried in a wiring groove or a via hole made in an insulating film on a substrate where a semiconductor chip is fabricated, and its manufacturing method are provided.

公开(公告)号：US09727107B2

公开(公告)日：2017-08-08

申请号：US13813744

申请日：2011-08-04

申请人： Hiroo Hongo ,  Masaki Yasukawa

发明人： Hiroo Hongo ,  Masaki Yasukawa

IPC分类号： G06F1/32 ,  G06F1/26 ,  H04Q9/00 ,  G06F13/12 ,  G08C17/00 ,  H04L12/12

CPC分类号： G06F1/266 ,  G06F13/126 ,  G08C17/00 ,  G08C2201/50 ,  H04L12/12 ,  H04Q9/00 ,  H04Q2209/826 ,  H04Q2209/883

摘要： A controlled apparatus periodically transmits state information indicating the state of the apparatus, and when the state has been changed, transmits state information indicating the state after the change. Upon receiving state information from the controlled apparatus, a control apparatus, when not requesting a change of state in the controlled apparatus, returns the state information to the controlled apparatus, and when requesting a change of the state in the controlled apparatus, changes state parameters in the state information that correspond to the state to be changed to required values and transmits the state information after the change to the controlled apparatus as a control command. The controlled apparatus, upon receiving the control command from the control apparatus, changes to a state in accordance with the state parameters that follow the change and transmits the state information indicating the state after the change to the control apparatus.

公开(公告)号：US20130132744A1

公开(公告)日：2013-05-23

申请号：US13813744

申请日：2011-08-04

申请人： Hiroo Hongo ,  Masaki Yasukawa

发明人： Hiroo Hongo ,  Masaki Yasukawa

IPC分类号： G06F1/26 ,  G06F13/12

CPC分类号： G06F1/266 ,  G06F13/126 ,  G08C17/00 ,  G08C2201/50 ,  H04L12/12 ,  H04Q9/00 ,  H04Q2209/826 ,  H04Q2209/883

摘要： A controlled apparatus periodically transmits state information indicating the state of the apparatus, and when the state has been changed, transmits state information indicating the state after the change. Upon receiving state information from the controlled apparatus, a control apparatus, when not requesting a change of state in the controlled apparatus, returns the state information to the controlled apparatus, and when requesting a change of the state in the controlled apparatus, changes state parameters in the state information that correspond to the state to be changed to required values and transmits the state information after the change to the controlled apparatus as a control command. The controlled apparatus, upon receiving the control command from the control apparatus, changes to a state in accordance with the state parameters that follow the change and transmits the state information indicating the state after the change to the control apparatus.

摘要翻译： 受控设备周期性地发送指示设备状态的状态信息，并且当状态已经改变时，发送指示改变之后的状态的状态信息。 当从受控装置接收到状态信息时，控制装置在不请求受控装置中的状态改变的情况下将状态信息返回到受控装置，并且当请求控制装置中的状态改变时，改变状态参数 在与将被改变为所需值的状态相对应的状态信息中，并将改变后的状态信息作为控制命令发送到受控设备。 控制装置在从控制装置接收到控制指令后，根据变更后的状态参数变更为状态，并将表示改变后的状态的状态信息发送给控制装置。

公开(公告)号：US07518247B2

公开(公告)日：2009-04-14

申请号：US10536993

申请日：2003-12-01

申请人： Toshitsugu Sakamoto ,  Hisao Kawaura ,  Toshio Baba ,  Fumiyuki Nihey ,  Yukinori Ochiai ,  Hiroo Hongo

发明人： Toshitsugu Sakamoto ,  Hisao Kawaura ,  Toshio Baba ,  Fumiyuki Nihey ,  Yukinori Ochiai ,  Hiroo Hongo

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76838 ,  B82Y10/00 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： There has been a problem that micromiaturization causes increase of the resistance of wiring structure and degradation of electron migration resistance and stress migration resistance. The present invention provides a wiring structure of a semiconductor device having a low resistance even when the semiconductor device is microminiaturized, free of electron migration and stress migration, and having a high reliability and a method for manufacturing the same. A semiconductor device having a wiring or a connection plug made of a mixture of a metal and carbon nanotubes berried in a wiring groove or a via hole made in an insulating film on a substrate where a semiconductor chip is fabricated, and its manufacturing method are provided.

摘要翻译： 存在微观化导致布线结构的电阻增加和电子迁移阻力降低以及耐应力迁移阻力的问题。 本发明提供即使当半导体器件微型化，电子迁移和应力迁移，并且具有高可靠性及其制造方法时，具有低电阻的半导体器件的布线结构。 具有布线或连接插头的半导体装置及其制造方法，所述布线或连接插头由在制造半导体芯片的基板上的绝缘膜中的布线槽或通孔中的金属和碳纳米管的混合物构成， 。