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17 条记录 (耗时 0.011 秒)

    Method for manufacturing low voltage flash memory
    11.
    发明授权
    Method for manufacturing low voltage flash memory 失效
    制造低压闪存的方法

    公开(公告)号：US06927128B2

    公开(公告)日：2005-08-09

    申请号：US09947419

    申请日：2001-09-05

    申请人： Jung-Wook Shin ,  Jae-Seung Kim ,  Hong-Seub Kim

    发明人： Jung-Wook Shin ,  Jae-Seung Kim ,  Hong-Seub Kim

    IPC分类号： H01L27/115 ,  H01L21/28 ,  H01L21/336 ,  H01L29/51 ,  H01L29/788 ,  H01L21/425

    CPC分类号： H01L29/7883 ,  H01L21/28194 ,  H01L21/28273 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7882

    摘要： A memory comprises a gate oxide layer formed on a semiconductor substrate; an ion trap region formed in a corner portion of the gate oxide layer; a floating gate formed on the gate oxide layer; a dielectric layer formed on the floating gate; a control gate formed on the dielectric layer; a spacer provided along side walls of a formed gate; an LDD formed under the spacer on the semiconductor substrate, the LDD being doped at a low concentration with impurities; and a source/drain region formed on an element region of the semiconductor substrate contacting the LDD, the source/drain region being doped at a high concentration with impurities. In one embodiment, the ion trap region is formed by performing ion injection into a corner portion of the gate oxide after the gate, including the control gate and the floating gate, is formed.

    摘要翻译： 存储器包括形成在半导体衬底上的栅氧化层; 形成在栅极氧化物层的角部的离子阱区域; 形成在栅极氧化物层上的浮栅; 形成在浮动栅极上的电介质层; 形成在所述电介质层上的控制栅极; 沿着形成的门的侧壁设置的间隔件; 在半导体衬底上的间隔物之下形成的LDD，LDD以低浓度掺杂杂质; 以及源极/漏极区域，形成在与LDD接触的半导体衬底的元件区域上，源/漏区域以高浓度掺杂杂质。 在一个实施例中，在形成包括控制栅极和浮置栅极的栅极之后，通过对栅极氧化物的角部进行离子注入来形成离子阱区域。

    Method for manufacturing a radio frequency integrated circuit on epitaxial silicon
    12.
    发明授权
    Method for manufacturing a radio frequency integrated circuit on epitaxial silicon 失效
    外延硅制造射频集成电路的方法

    公开(公告)号：US06518141B2

    公开(公告)日：2003-02-11

    申请号：US09946935

    申请日：2001-09-04

    申请人： Kae-Hoon Lee ,  Jae-Seung Kim ,  Hong-Seub Kim

    发明人： Kae-Hoon Lee ,  Jae-Seung Kim ,  Hong-Seub Kim

    IPC分类号： H01L2136

    CPC分类号： H01L27/08 ,  H01L27/0617

    摘要： Disclosed are an RF integrated circuit and method for manufacturing the same. The RF integrated circuit comprises an insulating layer including a plurality of windows; epitaxial silicon layers separately formed on the insulating layer; semiconductor elements formed on the epitaxial silicon layers; a PMD layer formed on the epitaxial silicon layers and the insulating layer, and including contacts that connecting the semiconductor elements; a first metal wiring layer formed on the PMD layer; an IMD layer formed on the first metal wiring layer, and including vias connecting the first metal wiring layer; a second metal wiring layer formed on the IMD layer; and a capping layer formed on the second metal wiring layer.

    摘要翻译： 公开了一种RF集成电路及其制造方法。 RF集成电路包括包括多个窗口的绝缘层; 外延硅层分别形成在绝缘层上; 在外延硅层上形成的半导体元件; 形成在外延硅层和绝缘层上的PMD层，并且包括连接半导体元件的触点; 形成在PMD层上的第一金属布线层; 形成在第一金属布线层上的IMD层，并且包括连接第一金属布线层的通孔; 形成在IMD层上的第二金属布线层; 以及形成在所述第二金属布线层上的覆盖层。

    PLASMA GENERATING APPARATUS
    13.
    发明申请
    PLASMA GENERATING APPARATUS 审中-公开

    公开(公告)号：US20110005683A1

    公开(公告)日：2011-01-13

    申请号：US12519713

    申请日：2007-08-13

    申请人： Hong-Seub Kim

    发明人： Hong-Seub Kim

    IPC分类号： C23F1/08 ,  C23C16/00

    CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/3244

    摘要： Provided is a plasma generating apparatus. The plasma generating apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna unit, and an antenna cover. The vacuum chamber has a hollow interior and is sealed at a top. The ESC disposed at an internal center of the vacuum chamber receives an external bias Radio Frequency (RF). The antenna unit covers and seals the through-hole of an insulating vacuum plate. The antenna cover covers a top of the antenna unit and has a gas injection port.

    PLASMA GENERATING APPARATUS
    15.
    发明申请
    PLASMA GENERATING APPARATUS 审中-公开
    等离子体发生装置

    公开(公告)号：US20100230050A1

    公开(公告)日：2010-09-16

    申请号：US12599718

    申请日：2008-04-18

    申请人： Hong-Seub Kim

    发明人： Hong-Seub Kim

    IPC分类号： C23F1/08 ,  H01L21/306 ,  C23C16/00

    CPC分类号： H01L21/6831 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174

    摘要： Provided is a plasma generating apparatus. The apparatus includes a vacuum, an ElectroStatic Chuck (ESC), and an antenna unit. The vacuum chamber has a hollow interior and is sealed at its top by a vacuum plate that has a plurality of gas jet holes. The ESC is disposed at an internal center of the vacuum chamber. The antenna unit covers and seals the gas jet holes with being spaced a predetermined distance apart from a surface of the vacuum plate, has a gas inlet communicating with the gas jet holes, and receives an external source RF.

    摘要翻译： 提供了一种等离子体产生装置。 该装置包括真空，静电卡盘（ESC）和天线单元。 真空室具有中空的内部，并通过具有多个气体喷射孔的真空板在其顶部被密封。 ESC设置在真空室的内部中心。 天线单元覆盖并密封与真空板表面隔开预定距离的气体喷射孔，具有与气体喷射孔连通的气体入口，并且接收外部源RF。