公开(公告)号：US07866341B2

公开(公告)日：2011-01-11

申请号：US12713136

申请日：2010-02-25

申请人： Hong-Seub Kim ,  Hyun-Soo Park ,  Soon-Bin Jung ,  Sung-Ho Cha ,  Dong-Jin Kim ,  Wook-Jung Hwang ,  Jin-Hyuk Yoo

发明人： Hong-Seub Kim ,  Hyun-Soo Park ,  Soon-Bin Jung ,  Sung-Ho Cha ,  Dong-Jin Kim ,  Wook-Jung Hwang ,  Jin-Hyuk Yoo

IPC分类号： H01L21/205

CPC分类号： H01L21/67161 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/67173 ,  Y10T137/86083 ,  Y10T137/86139

摘要： An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

摘要翻译： 一种装置，包括在大气条件下的转印单元，其中具有机器人; 以及至少一个处理室，其连接到转印单元的一侧，其间具有槽阀，并且交替地在真空条件下和在大气条件下。

公开(公告)号：US07695231B2

公开(公告)日：2010-04-13

申请号：US11076512

申请日：2005-03-08

申请人： Hong-Seub Kim ,  Hyun-Soo Park ,  Soon-Bin Jung ,  Sung-Ho Cha ,  Dong-Jin Kim ,  Wook-Jung Hwang ,  Jin-Hyuk Yoo

发明人： Hong-Seub Kim ,  Hyun-Soo Park ,  Soon-Bin Jung ,  Sung-Ho Cha ,  Dong-Jin Kim ,  Wook-Jung Hwang ,  Jin-Hyuk Yoo

IPC分类号： B65G49/00

CPC分类号： H01L21/67161 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/67173 ,  Y10T137/86083 ,  Y10T137/86139

摘要： An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

摘要翻译： 一种装置，包括在大气条件下的转印单元，其中具有机器人; 以及至少一个处理室，其连接到转印单元的一侧，其间具有槽阀，并且交替地在真空条件下和在大气条件下。

公开(公告)号：US20050196254A1

公开(公告)日：2005-09-08

申请号：US11076512

申请日：2005-03-08

申请人： Hong-Seub Kim ,  Hyun-Soo Park ,  Soon-Bin Jung ,  Sung-Ho Cha ,  Dong-Jin Kim ,  Wook-Jung Hwang ,  Jin-Hyuk Yoo

发明人： Hong-Seub Kim ,  Hyun-Soo Park ,  Soon-Bin Jung ,  Sung-Ho Cha ,  Dong-Jin Kim ,  Wook-Jung Hwang ,  Jin-Hyuk Yoo

IPC分类号： B65G1/00 ,  C23C16/00 ,  F04D17/10 ,  G02F1/133 ,  H01L21/00

CPC分类号： H01L21/67161 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/67173 ,  Y10T137/86083 ,  Y10T137/86139

摘要： An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

摘要翻译： 一种装置，包括在大气条件下的转印单元，其中具有机器人; 以及至少一个处理室，其连接到转印单元的一侧，其间具有槽阀，并且交替地在真空条件下和在大气条件下。

公开(公告)号：US20100099248A1

公开(公告)日：2010-04-22

申请号：US12588564

申请日：2009-10-20

申请人： Du-Hyun Cho ,  Tae-Hyuk Ahn ,  Sang-Sup Jeong ,  Jin-Hyuk Yoo

发明人： Du-Hyun Cho ,  Tae-Hyuk Ahn ,  Sang-Sup Jeong ,  Jin-Hyuk Yoo

IPC分类号： H01L21/28

CPC分类号： H01L27/11573 ,  H01L21/28114 ,  H01L27/105 ,  H01L27/1052 ,  H01L29/42376

摘要： Methods of fabricating a semiconductor device are provided, the methods include forming a first dielectric layer, a data storage layer, and a second dielectric layer, which are sequentially stacked, on a semiconductor substrate. A mask having a first opening exposing a first region of the second dielectric layer is formed on the second dielectric layer. A gate electrode filling at least a portion of the first opening is formed. A second opening exposing a second region of the second dielectric layer is formed by etching the mask such that the second region is spaced apart from the first region. A second dielectric pattern and a data storage pattern are formed by sequentially etching the exposed second region of the second dielectric layer and the data storage layer. The second dielectric pattern is formed to have a greater width than a lower surface of the gate electrode.

摘要翻译： 提供了制造半导体器件的方法，所述方法包括在半导体衬底上形成依次层叠的第一电介质层，数据存储层和第二电介质层。 具有暴露第二电介质层的第一区域的第一开口的掩模形成在第二电介质层上。 形成填充至少一部分第一开口的栅电极。 暴露第二电介质层的第二区域的第二开口通过蚀刻掩模形成，使得第二区域与第一区域间隔开。 通过依次蚀刻第二介电层和数据存储层的暴露的第二区域来形成第二介质图案和数据存储图案。 第二电介质图案形成为具有比栅电极的下表面更大的宽度。

公开(公告)号：US20160111431A1

公开(公告)日：2016-04-21

申请号：US14957099

申请日：2015-12-02

申请人： Jin-Hyuk Yoo ,  Dae-Hyun Jang ,  Yoo-Chul Kong ,  Kyoung-Sub Shin

发明人： Jin-Hyuk Yoo ,  Dae-Hyun Jang ,  Yoo-Chul Kong ,  Kyoung-Sub Shin

IPC分类号： H01L27/115 ,  H01L29/06 ,  H01L23/528

CPC分类号： H01L27/1157 ,  H01L23/48 ,  H01L23/528 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor device. The semiconductor device includes a conductive pattern disposed on a semiconductor substrate. First and second conductive lines disposed on the conductive pattern and located at the same level as each other, are provided. An isolation pattern is disposed between the first and second conductive lines. A first vertical structure passing through the first conductive line and conductive pattern is provided. A second vertical structure passing through the second conductive line and conductive patterns is provided. An auxiliary pattern passing through the conductive pattern and in contact with the isolation pattern is provided.

公开(公告)号：US09899404B2

公开(公告)日：2018-02-20

申请号：US14957099

申请日：2015-12-02

申请人： Jin-Hyuk Yoo ,  Dae-Hyun Jang ,  Yoo-Chul Kong ,  Kyoung-Sub Shin

发明人： Jin-Hyuk Yoo ,  Dae-Hyun Jang ,  Yoo-Chul Kong ,  Kyoung-Sub Shin

IPC分类号： H01L29/76 ,  H01L27/1157 ,  H01L23/48 ,  H01L27/11573 ,  H01L27/11582 ,  H01L23/528 ,  H01L27/11524 ,  H01L27/11556 ,  H01L29/06

CPC分类号： H01L27/1157 ,  H01L23/48 ,  H01L23/528 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor device. The semiconductor device includes a conductive pattern disposed on a semiconductor substrate. First and second conductive lines disposed on the conductive pattern and located at the same level as each other, are provided. An isolation pattern is disposed between the first and second conductive lines. A first vertical structure passing through the first conductive line and conductive pattern is provided. A second vertical structure passing through the second conductive line and conductive patterns is provided. An auxiliary pattern passing through the conductive pattern and in contact with the isolation pattern is provided.

公开(公告)号：US08017485B2

公开(公告)日：2011-09-13

申请号：US12588564

申请日：2009-10-20

申请人： Du-Hyun Cho ,  Tae-Hyuk Ahn ,  Sang-Sup Jeong ,  Jin-Hyuk Yoo

发明人： Du-Hyun Cho ,  Tae-Hyuk Ahn ,  Sang-Sup Jeong ,  Jin-Hyuk Yoo

IPC分类号： H01L21/336

CPC分类号： H01L27/11573 ,  H01L21/28114 ,  H01L27/105 ,  H01L27/1052 ,  H01L29/42376

摘要： Methods of fabricating a semiconductor device are provided, the methods include forming a first dielectric layer, a data storage layer, and a second dielectric layer, which are sequentially stacked, on a semiconductor substrate. A mask having a first opening exposing a first region of the second dielectric layer is formed on the second dielectric layer. A gate electrode filling at least a portion of the first opening is formed. A second opening exposing a second region of the second dielectric layer is formed by etching the mask such that the second region is spaced apart from the first region. A second dielectric pattern and a data storage pattern are formed by sequentially etching the exposed second region of the second dielectric layer and the data storage layer. The second dielectric pattern is formed to have a greater width than a lower surface of the gate electrode.

摘要翻译： 提供了制造半导体器件的方法，所述方法包括在半导体衬底上形成依次层叠的第一电介质层，数据存储层和第二电介质层。 具有暴露第二电介质层的第一区域的第一开口的掩模形成在第二电介质层上。 形成填充至少一部分第一开口的栅电极。 暴露第二电介质层的第二区域的第二开口通过蚀刻掩模形成，使得第二区域与第一区域间隔开。 通过依次蚀刻第二介电层和数据存储层的暴露的第二区域来形成第二介质图案和数据存储图案。 第二电介质图案形成为具有比栅电极的下表面更大的宽度。

公开(公告)号：US07605084B2

公开(公告)日：2009-10-20

申请号：US11746566

申请日：2007-05-09

申请人： Jeong-Hoon Han ,  Jin-Hyuk Yoo ,  Young-Rok Kim

发明人： Jeong-Hoon Han ,  Jin-Hyuk Yoo ,  Young-Rok Kim

IPC分类号： H01L21/42

CPC分类号： H01L21/31608 ,  C23C16/045 ,  C23C16/507 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76837

摘要： A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.

摘要翻译： 在衬底上填充间隙的方法包括将其上形成有间隙的衬底设置在腔室中的基座上; 向腔室施加源功率以产生等离子体进入腔室; 将工艺气体供应到所述室中; 通过向所述基座施加第一偏置功率来将薄膜填充到间隙中，所述第一偏置功率的幅度被周期性地调制; 停止处理气体的供给并切断第一偏压功率; 并熄灭腔室中的等离子体。