POLYESTER RESIN RESULTING FROM THE COPOLYMERISATION OF LACTIC ACID AND ISOSORBIDE, AND A PRODUCTION METHOD THEREFOR
    5.
    发明申请
    POLYESTER RESIN RESULTING FROM THE COPOLYMERISATION OF LACTIC ACID AND ISOSORBIDE, AND A PRODUCTION METHOD THEREFOR 审中-公开
    由酸乳酸和异山梨醇的共聚合得到的聚酯树脂及其生产方法

    公开(公告)号:US20140011976A1

    公开(公告)日:2014-01-09

    申请号:US14006167

    申请日:2012-03-28

    IPC分类号: C08G63/60

    CPC分类号: C08G63/60 C08G63/66

    摘要: A polyester resin with a superior heat-resistance and color as well as high content of a compound derived from biomass due to copolymerization of lactic acid or a compound derived therefrom and isosorbide, and a method for preparing the same are disclosed. The polyester resin is copolymerized with diacid components including terephthalic acid; diol components including 1 to 60 mol % of isosorbide and 1 to 90 mol % of ethylene glycol with respect to total diol components; and 1 to 50 weight % of lactic acid or a compound derived therefrom with respect to total reactants for resin polymerization, wherein, the polyester resin has the repeated structure of diacid moiety derived from the diacid components, diol moiety derived from the diol components and hydroxy monoacid moiety derived from the lactic acid or the compound derived therefrom.

    摘要翻译: 公开了具有优异的耐热性和颜色的聚酯树脂以及由于乳酸或其衍生物与异山梨醇的共聚而衍生自生物质的化合物的高含量及其制备方法。 聚酯树脂与二酸成分共聚,包括对苯二甲酸; 相对于二醇成分,含有1〜60摩尔%的异山梨醇和1〜90摩尔%的乙二醇的二醇成分; 和1至50重量%的乳酸或由其衍生的化合物相对于树脂聚合的总反应物,其中,聚酯树脂具有源自二酸组分的二酸部分的重复结构,衍生自二醇组分的二醇部分和羟基 衍生自乳酸的单酸部分或由其衍生的化合物。

    Ti(N) thin-film resistor deposited on ALN substrate and attenuator using same
    7.
    发明授权
    Ti(N) thin-film resistor deposited on ALN substrate and attenuator using same 有权
    沉积在ALN衬底上的Ti(N)薄膜电阻和使用它的衰减器

    公开(公告)号:US07936248B2

    公开(公告)日:2011-05-03

    申请号:US12149449

    申请日:2008-05-01

    IPC分类号: H01C1/012

    CPC分类号: H01C7/006 H01C17/075

    摘要: The present invention relates to a thin-film resistor for an attenuator that is utilized in the fourth generation mobile communication, and more specifically, to a thin-film resistor having a Ti(N) thin film formed on an aluminum nitride (ALN) substrate. The thin-film resistor of the invention has superior electrical characteristics, such as sheet resistance, and superior characteristics in change of attenuation and voltage standing wave ratio (VSWR) with respect to changes of frequency and L/W, and thus the thin-film resistor can be utilized in a high frequency domain of up to 6 GHz.

    摘要翻译: 本发明涉及一种用于第四代移动通信中的用于衰减器的薄膜电阻器,更具体地说,涉及一种在氮化铝(ALN)衬底上形成有Ti(N)薄膜的薄膜电阻器 。 本发明的薄膜电阻器具有优异的电特性,如薄层电阻,以及相对于频率和L / W的变化而言的衰减和电压驻波比(VSWR)的变化的优异特性,因此薄膜 电阻可用于高达6 GHz的高频域。