Semiconductor devices having air gaps
    20.
    发明授权
    Semiconductor devices having air gaps 有权
    具有气隙的半导体器件

    公开(公告)号:US09577115B2

    公开(公告)日:2017-02-21

    申请号:US13195347

    申请日:2011-08-01

    CPC classification number: H01L29/7881 H01L21/764 H01L27/11521 H01L29/42336

    Abstract: A semiconductor device has an isolation layer pattern, a plurality of gate structures, and a first insulation layer pattern. The isolation layer pattern is formed on a substrate and has a recess thereon. The gate structures are spaced apart from each other on the substrate and the isolation layer pattern. The first insulation layer pattern is formed on the substrate and covers the gate structures and an inner wall of the recess. The first insulation layer pattern has a first air gap therein.

    Abstract translation: 半导体器件具有隔离层图案,多个栅极结构和第一绝缘层图案。 隔离层图案形成在基板上并且在其上具有凹部。 栅极结构在衬底和隔离层图案上彼此间隔开。 第一绝缘层图案形成在基板上并且覆盖该凹槽的栅极结构和内壁。 第一绝缘层图案中具有第一气隙。

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