公开(公告)号：US5984391A

公开(公告)日：1999-11-16

申请号：US883204

申请日：1997-06-26

Applicant: John W. Vanderpot ,  John D. Pollock

Inventor： John W. Vanderpot ,  John D. Pollock

IPC: H01L21/687 ,  B25J15/00 ,  B65G49/07

CPC classification number: H01L21/68707 ,  Y10S294/902 ,  Y10S414/135

Abstract: The invention provides wafer handling apparatus for use with a wafer handling mechanism of the type that supports and transports wafers through and during semiconductor processes. Typically, the wafer has a first surface for semiconductor processing and a second surface having a surface finish with microfeatures therein. The invention utilizes at least three prongs extending from the mechanism and arranged to support the wafer. A stylus tip--preferably made from diamond--resides at a distal end of each prong. Each tip has a point that is smaller than at least some of the microfeatures of the second surface of the wafer such that the interaction of the tips with the microfeatures resists lateral movement of the wafer relative to the tips when the wafer rests on the tips by the force of gravity. This interaction is sufficient to move the wafer without substantial contribution from the coefficient of friction between the tips and the wafer. The invention solves the problems of the prior art associated with outgassing by rubber pads and low coefficients of friction associated with quartz pads. Motors with feedback control adjust the speed at which the prongs interact with the wafers so as to prolong tip life.

Abstract translation: 本发明提供了晶片处理装置，其用于在半导体工艺期间和半导体工艺期间支撑和输送晶片的晶片处理机构。 通常，晶片具有用于半导体处理的第一表面和具有其中具有微特征的表面光洁度的第二表面。 本发明利用从机构延伸的至少三个尖头并且被布置成支撑晶片。 优选由钻石制成的触针尖位于每个插脚的远端。 每个尖端具有小于晶片的第二表面的至少一些微特征的点，使得当晶片搁置在尖端上时，尖端与微特征的相互作用抵抗晶片相对于尖端的横向移动， 重力。 这种相互作用足以移动晶片，而没有从尖端和晶片之间的摩擦系数的实质贡献。 本发明解决了与橡胶垫脱气相关的现有技术和与石英垫相关的低摩擦系数的问题。 具有反馈控制的电机调节插脚与晶片相互作用的速度，以延长端头寿命。

公开(公告)号：US5421889A

公开(公告)日：1995-06-06

申请号：US84415

申请日：1993-06-29

Applicant: John D. Pollock ,  Louise S. Barriss

Inventor： John D. Pollock ,  Louise S. Barriss

IPC: B65G49/07 ,  C23C16/54 ,  H01L21/205 ,  H01L21/677 ,  H01L21/687 ,  B25J3/02 ,  B25J3/04 ,  B25J15/00 ,  C23C16/00

CPC classification number: H01L21/68707 ,  C23C16/54 ,  Y10S414/135 ,  Y10S414/14 ,  Y10S414/141

Abstract: The invention provides apparatus and methods for improving systems which expose samples to reactive plasmas, and more particularly for inverting the sample within these systems. The systems are of the type which have one or more process chambers, at least one intermediate chamber, and a robot transport mechanism to transport the sample between the several chambers. The invention includes flipping and gripping assemblies which mount within the intermediate chamber. These assemblies grasp and remove the sample as transported by the robot mechanism, and invert the sample within the intermediate chamber. The inverted sample is re-positioned at the robot mechanism so that the sample can be transported to one or more process chambers for deposition in a "face down" orientation, which reduces contamination.

Abstract translation: 本发明提供了用于改进将样品暴露于反应性等离子体的系统的装置和方法，更具体地说，用于在这些系统内反转样品。 这些系统是具有一个或多个处理室，至少一个中间室和用于在多个室之间输送样品的机器人传送机构的系统。 本发明包括安装在中间室内的翻转和夹紧组件。 这些组件抓住并移除由机器人机构运送的样品，并将样品反转在中间室内。 将倒置的样品重新定位在机器人机构处，使得样品可以被运送到一个或多个处理室，以便以“面向下”取向沉积，这减少了污染。

公开(公告)号：US4726689A

公开(公告)日：1988-02-23

申请号：US921435

申请日：1986-10-22

Applicant: John D. Pollock

Inventor： John D. Pollock

IPC: F16C29/02 ,  F16C29/08 ,  F16C32/06 ,  F16J15/40 ,  F16J15/54 ,  F16J15/56 ,  H01J37/18 ,  F16C33/72 ,  F16J15/16

CPC classification number: H01J37/18 ,  F16C29/025 ,  F16C32/0614 ,  F16C33/748 ,  F16J15/406 ,  F16J15/54 ,  F16J15/56 ,  F16C2300/62 ,  Y10S277/913

Abstract: A high vacuum ion implantation chamber has a lower wall formed with an opening accommodating a depending sleeve through which a shaft passes supporting a substrate support platform at the top and connectable to external linear and rotary drives at the bottom. The sleeve is formed with four axially spaced annular grooves each coupled to a respective vacuum pump that maintains the annular grooves at respective pressures that progressively increase for grooves further away from the vacuum chamber bottom wall. A lowermost annular groove functions as an exhaust along with the region surrounding the shaft at the bottom of the sleeve. The sleeve also includes an air inlet. The gravity forces acting upon the shaft and platform assembly are counterbalanced by the differential pressure acting over the shaft area between the high vacuum chamber and the ambient surroundings.

Abstract translation: 高真空离子注入室具有下壁，该下壁形成有容纳垂直套筒的开口，轴通过该开口支撑顶部的基板支撑平台，并可连接到底部的外部线性和旋转驱动器。 套筒形成有四个轴向隔开的环形凹槽，每个环形凹槽各自耦合到相应的真空泵，其将环形凹槽保持在相对于进一步远离真空室底壁的凹槽逐渐增加的压力。 最下面的环形槽与套筒底部围绕轴的区域一起用作排气口。 套筒还包括空气入口。 作用在轴和平台组件上的重力通过作用在高真空室和周围环境之间的轴区域上的压力差平衡。

公开(公告)号：US08669539B2

公开(公告)日：2014-03-11

申请号：US12748877

申请日：2010-03-29

Applicant: Zhimin Wan ,  John D. Pollock ,  Don Berrian ,  Causon Ko-Chuan Jen

Inventor： Zhimin Wan ,  John D. Pollock ,  Don Berrian ,  Causon Ko-Chuan Jen

IPC: H01J37/317 ,  H01J37/02

CPC classification number: C23C14/48 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/24542 ,  H01J2237/31711

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract translation: 在通过成形离子束注入衬底之前，使用孔装置内的可变孔径来形成离子束，特别是最终在离开衬底前方的位置形成离子束。 因此，可以通过不同的成形离子束分别注入衬底或不同衬底的不同部分，而不需要通过使用多个固定孔或每次重新调整离子束。 换句话说，可以通过定制的离子束分别实现不同的注入，而不需要高成本（使用多个固定孔径器件）和复杂的操作（每次重新调整离子束）。 此外，可以加速用于获取要注入的特定离子束的光束调整过程，以便每次都比使用多个固定孔径和/或重新调整离子束更快，因为可以实现可变孔径的调节 简单地通过机械操作。

公开(公告)号：US08304330B2

公开(公告)日：2012-11-06

申请号：US13351334

申请日：2012-01-17

Applicant: John D. Pollock ,  Zhimin Wan ,  Erik Collart

Inventor： John D. Pollock ,  Zhimin Wan ,  Erik Collart

IPC: H01L21/425

CPC classification number: C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

Abstract translation: 提供了用于低温离子注入的技术以提高生产量。 在低温离子注入期间，可以在通过冷却过程将衬底温度降低到约为规定的植入温度之前开始注入工艺，并且可以开始加热过程以在植入过程完成之前增加衬底温度 。 此外，可以在植入过程的一个或多个部分期间执行一个或多个温度调节过程，使得在植入过程期间，衬底温度可以可控地高于处方植入物温度。

公开(公告)号：US06428262B1

公开(公告)日：2002-08-06

申请号：US09637096

申请日：2000-08-10

Applicant: John W. Vanderpot ,  John D. Pollock

Inventor： John W. Vanderpot ,  John D. Pollock

IPC: B65G4907

CPC classification number: H01L21/67757 ,  H01L21/67745 ,  H01L21/67754 ,  H01L21/67772 ,  H01L21/67778 ,  H01L21/67781 ,  Y10S414/139

Abstract: The system processes one or more wafers from a FOUP to an ion processing chamber. A group of wafers from the FOUP is removed by a first end effector and loaded into a load lock through a lower door in an atmosphere opened position. The load lock is sealed, evacuated, and an upper door is opened to a vacuum opened position. A second end effector connected to a 3-axis robot moves one of the wafers from the load lock to the ion processing chamber. A wafer alignment robot can also be used. Wafers are sequentially processed from the load lock to the processing chamber until complete; and then the wafers within the load lock are sealed, pressurized, and moved back to the FOUP. A second load lock, and multiple FOUPs, are used to increase throughput.

Abstract translation: 该系统处理从FOUP到离子处理室的一个或多个晶片。 来自FOUP的一组晶片被第一端部执行器移除，并通过位于大气打开位置的下门装载到装载锁中。 负载锁被密封，抽真空，并且上门打开到真空打开位置。 连接到3轴机器人的第二端部执行器将一个晶片从负载锁移动到离子处理室。 也可以使用晶片对准机器人。 晶片从负载锁定到处理室，直至完成; 然后加载锁中的晶片被密封，加压并移回FOUP。 使用第二个加载锁和多个FOUP来增加吞吐量。

公开(公告)号：US4680474A

公开(公告)日：1987-07-14

申请号：US736888

申请日：1985-05-22

Applicant: Norman L. Turner ,  John D. Pollock

Inventor： Norman L. Turner ,  John D. Pollock

IPC: H01J37/18 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/18 ,  Y10S414/139

Abstract: The implant chamber pressure during ion implantation is controlled within a specified intermediate pressure range higher than the baseline pressure. Implanted dose errors resulting from neutralizing collisions of the beam with residual gas molecules are held constant and can be compensated. The pressure is maintained within the specified intermediate pressure range by a control system including a controllable vacuum valve associated with a vacuum pump, a chamber pressure sensor and a valve controller responsive to the pressure sensor. The valve controller opens and closes the valve to maintain the chamber pressure within the specified range after introduction of a wafer.

Abstract translation: 离子注入期间的植入室压力被控制在高于基线压力的规定的中间压力范围内。 由残留气体分子的中和碰撞引起的植入剂量误差保持恒定，并且可以被补偿。 通过包括与真空泵相关联的可控真空阀，腔室压力传感器和响应于压力传感器的阀控制器的控制系统将压力保持在指定的中间压力范围内。 阀门控制器打开和关闭阀门，以在引入晶片之后将腔室压力保持在指定范围内。

公开(公告)号：US20100181501A1

公开(公告)日：2010-07-22

申请号：US12357320

申请日：2009-01-21

Applicant: John D. Pollock

Inventor： John D. Pollock

IPC: H01J37/20

CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J2237/2001

Abstract: An ion implanter that comprises a chuck assembly having a chuck to clamp, hold, and cool a wafer is disclosed. The chuck is cooled by a cooling assembly circulated with a special coolant, such that the chuck can be maintained at very low temperatures. A mechanical design is provided to minimize the direct surface-to-surface contact area between the chuck and a base, which is employed to support the chuck. The mechanical design includes fasteners for providing mechanical support between the chuck and the base and thermal insulators for providing thermal insulation between the chuck and the base.

Abstract translation: 公开了一种离子注入机，其包括具有用于夹紧，保持和冷却晶片的卡盘的卡盘组件。 卡盘通过用特殊冷却剂循环的冷却组件冷却，使得卡盘可以保持在非常低的温度。 提供机械设计以最小化用于支撑卡盘的卡盘和基座之间的直接表面到表面的接触面积。 机械设计包括用于在卡盘和基座之间提供机械支撑的紧固件和用于在卡盘和基座之间提供热绝缘的热绝缘体。

公开(公告)号：US5996528A

公开(公告)日：1999-12-07

申请号：US674444

申请日：1996-07-02

Applicant: Donald W. Berrian ,  Robert Kaim ,  John D. Pollock

Inventor： Donald W. Berrian ,  Robert Kaim ,  John D. Pollock

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  C23C16/00 ,  C23F1/02

CPC classification number: C23C16/45565 ,  C23C16/45568 ,  C23C16/45591 ,  C23C16/509 ,  H01J37/3244

Abstract: A reactor for plasma CVD or plasma etch is provided with a first electrode held to ground potential which supports the workpiece, e.g., a semiconductor wafer. A second electrode is spaced from the first electrode to form a gap therebetween, and has an electrical potential suitable to form an ionizing electrical field within the gap. The second electrode also has a gas inlet and a gas outlet. Preferably, the gas outlet includes a plurality of gas outlets. The reactor includes a porous plug constructed and arranged with the gas inlet to isolate the second electrode from ground potential. This plug has a plurality of pores which are sized to permit passage of gas therethrough and to substantially inhibit electrical discharge therein. Accordingly, gas injected through the gas inlet of the second electrode passes through the plug without ionization; and that gas thereafter exits from the gas outlet to provide substantially uniform ionization within the gap. Multiple gases and porous plugs can be used in tandem to mix and provide uniform plasma generation. A metal tube, substantially at ground potential, connects directly to the reactor and adjacent to the porous plug to provide a sturdy conduit for gases injected into the reactor and into regions of high potential.

Abstract translation: 用于等离子体CVD或等离子体蚀刻的反应器设置有保持接地电位的第一电极，其支撑工件，例如半导体晶片。 第二电极与第一电极间隔开，以在它们之间形成间隙，并具有适于在间隙内形成电离电场的电势。 第二电极还具有气体入口和气体出口。 优选地，气体出口包括多个气体出口。 反应器包括一个多孔插塞，其构造和布置有气体入口以将第二电极与地电位隔离。 该塞子具有多个孔，其尺寸允许气体通过其中并且基本上禁止其中的放电。 因此，通过第二电极的气体入口喷射的气体不会电离而穿过塞子; 然后气体从气体出口离开，以在间隙内提供基本均匀的电离。 多个气体和多孔塞可以串联使用，以混合和提供均匀的等离子体产生。 基本上处于地电位的金属管直接连接到反应器并且与多孔塞相邻，为注入反应器的气体和高电位的区域提供坚固的导管。

公开(公告)号：US4172804A

公开(公告)日：1979-10-30

申请号：US853289

申请日：1977-11-21

Applicant: George Christianson ,  John D. Pollock ,  William R. Freischel

Inventor： George Christianson ,  John D. Pollock ,  William R. Freischel

IPC: C04B18/28 ,  C09K21/02 ,  C04B43/00 ,  C09K3/28

CPC classification number: C09K21/02 ,  C04B18/28 ,  Y02W30/97

Abstract: A method of preparing fire retardant cellulosic fiber insulation which includes the steps of reacting borax with a source of hydrogen ions such as sulfuric acid or various other acids or acid salts in an amount sufficient to convert at least about 20% of the borax into boric acid and a sodium salt and then mixing the resulting composition with a cellulosic fiber base.

Abstract translation: 一种制备阻燃纤维素纤维绝缘体的方法，其包括以下步骤：使硼砂与氢离子源如硫酸或各种其它酸或酸盐反应，其量足以将至少约20％的硼砂转化为硼酸 和钠盐，然后将所得组合物与纤维素纤维基料混合。