公开(公告)号：US08283666B2

公开(公告)日：2012-10-09

申请号：US12500506

申请日：2009-07-09

Applicant: Do-Hyun Kim ,  Je-Hun Lee ,  Pil-Sang Yun ,  Dong-Hoon Lee ,  Bong-Kyun Kim

Inventor： Do-Hyun Kim ,  Je-Hun Lee ,  Pil-Sang Yun ,  Dong-Hoon Lee ,  Bong-Kyun Kim

IPC: H01L29/04

CPC classification number: H01L27/1225 ,  H01L29/7869

Abstract: A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other.

Abstract translation: 提供具有高电荷迁移率并且可以提高阈值电压的薄膜晶体管阵列基板，以及制造薄膜晶体管阵列基板的方法。 薄膜晶体管阵列基板包括：绝缘基板; 形成在所述绝缘基板上的栅电极; 氧化物半导体层，其包括形成在所述栅电极上的低氧化物层和形成在所述低氧化物层上的上氧化物层，使得所述上氧化物层的氧浓度高于所述低氧化物层的氧浓度; 以及形成在氧化物半导体层上并且彼此分离的源电极和漏电极。

公开(公告)号：US08252639B2

公开(公告)日：2012-08-28

申请号：US12951981

申请日：2010-11-22

Applicant: Je-Hun Lee ,  Beom-Seok Cho ,  Chang-Oh Jeong ,  Joo-Han Kim

Inventor： Je-Hun Lee ,  Beom-Seok Cho ,  Chang-Oh Jeong ,  Joo-Han Kim

IPC: H01L21/00

CPC classification number: H01L27/124 ,  H01L27/1288 ,  H01L29/12 ,  H01L29/458

Abstract: The present invention provides a thin film transistor array panel comprising: an insulating substrate; a gate line formed on the insulating substrate and having a gate electrode; a gate insulating layer formed on the gate line; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; diffusion barriers formed on the semiconductor and containing nitrogen; a data line crossing the gate line and having a source electrode partially contacting the diffusion barriers; a drain electrode partially contacting the diffusion barriers and facing the source electrode on the gate electrode; and a pixel electrode electrically connected to the drain electrode.

Abstract translation: 本发明提供一种薄膜晶体管阵列板，包括：绝缘基板; 形成在所述绝缘基板上并具有栅电极的栅极线; 栅极绝缘层，形成在栅极线上; 形成在所述栅极绝缘层上且与所述栅电极重叠的半导体; 在半导体上形成并含有氮的扩散阻挡层; 跨越栅极线并且具有部分地接触扩散阻挡层的源电极的数据线; 漏电极部分地接触扩散阻挡层并面对栅电极上的源电极; 以及电连接到漏电极的像素电极。

公开(公告)号：US20120205651A1

公开(公告)日：2012-08-16

申请号：US13452287

申请日：2012-04-20

Applicant: Je-Hun Lee ,  Do-Hyun Kim

Inventor： Je-Hun Lee ,  Do-Hyun Kim

IPC: H01L29/786

CPC classification number: H01L27/1225 ,  G02F1/136286 ,  G02F1/1368 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

Abstract: A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode.

Abstract translation: 提供一种液晶显示器及其制造方法。 液晶显示器包括绝缘基板，形成在绝缘基板上的栅电极，形成在栅电极上的氧化物半导体层，形成在沟道区中的氧化物半导体层上的蚀刻停止层，形成在绝缘基板上的公共电极 ，源电极和漏电极在蚀刻停止器上彼此分离并延伸到氧化物半导体层的上部，形成在蚀刻停止器上的钝化层，公共电极，源极和漏极以及形成在其上的像素电极 钝化层并连接到漏电极。

公开(公告)号：US20120155308A1

公开(公告)日：2012-06-21

申请号：US13330572

申请日：2011-12-19

Applicant: Je-Hun LEE ,  Sok-Kyu Lee

Inventor： Je-Hun LEE ,  Sok-Kyu Lee

IPC: H04W24/00 ,  H04L12/26

CPC classification number: H04W24/00 ,  H04W36/06 ,  H04W48/16 ,  H04W52/0206 ,  H04W88/08 ,  Y02D70/142

Abstract: Disclosed is a method for controlling a plurality of access points by a monitoring station in a communication system, including: receiving access point status report policy information from a control server; receiving a basic service set load information element from the plurality of access points; generating access point status information by using the basic service set load information element; transmitting the access point status information to the control server by a method specified in the access point status report policy information; receiving an access point control command from the control server; and transmitting the access point control command to the plurality of access points.

Abstract translation: 公开了一种通信系统中的监控站控制多个接入点的方法，包括：从控制服务器接收接入点状态报告策略信息; 从所述多个接入点接收基本服务集负载信息元素; 通过使用基本服务集负载信息元素生成接入点状态信息; 通过接入点状态报告策略信息中指定的方法向接入点状态信息发送接入点状态信息; 从所述控制服务器接收接入点控制命令; 以及将所述接入点控制命令发送到所述多个接入点。

公开(公告)号：US08077268B2

公开(公告)日：2011-12-13

申请号：US12140655

申请日：2008-06-17

Applicant: Eun-Guk Lee ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Do-Hyun Kim ,  Soon-Kwon Lim

Inventor： Eun-Guk Lee ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Do-Hyun Kim ,  Soon-Kwon Lim

IPC: G02F1/13

CPC classification number: H01L27/1225 ,  H01L29/7869

Abstract: A thin film transistor array substrate comprising a base substrate, a first wire on the base substrate, a first insulating layer on the base substrate to cover the first wire, a semiconductor layer on the first insulating layer, a second insulating layer on the first insulating layer on which the semiconductor layer is formed, and a second wire on the second insulating layer on the second insulating layer is provided, and a portion of the second wire makes contact with the semiconductor layer through the contact hole.

Abstract translation: 一种薄膜晶体管阵列基板，包括基底基板，在基底基板上的第一布线，在基底基板上覆盖第一布线的第一绝缘层，第一绝缘层上的半导体层，第一绝缘层上的第二绝缘层 设置有半导体层的层，第二绝缘层上的第二绝缘层上的第二布线，第二布线的一部分通过接触孔与半导体层接触。

公开(公告)号：US08035102B2

公开(公告)日：2011-10-11

申请号：US11646832

申请日：2006-12-27

Applicant: Je-Hun Lee ,  Young-Min Kim ,  Bo-Sung Kim ,  Jun-Young Lee ,  Sung-Wook Kang

Inventor： Je-Hun Lee ,  Young-Min Kim ,  Bo-Sung Kim ,  Jun-Young Lee ,  Sung-Wook Kang

IPC: H01L29/04

CPC classification number: H01L51/102 ,  G02F1/13439 ,  H01L27/283 ,  H01L51/0541 ,  H01L51/0545

Abstract: An improved display substrate is provided to reduce surface defects on insulating layers of organic thin film transistors. Related methods of manufacture are also provided. In one example, a display substrate includes a base, a plurality of data lines, a plurality of gate lines, a pixel defined by the data lines and the gate lines, an organic thin film transistor, and a pixel electrode. The data lines are on the base and are oriented in a first direction. The gate lines are oriented in a second direction that crosses the first direction. The organic thin film transistor includes a source electrode electrically connected to one of the data lines, a gate electrode electrically connected to one of the gate lines, and an organic semiconductor layer. The pixel electrode is disposed in the pixel and electrically connected to the organic thin film transistor. The pixel electrode comprises a transparent oxynitride.

Abstract translation: 提供改进的显示基板以减少有机薄膜晶体管的绝缘层上的表面缺陷。 还提供了相关的制造方法。 在一个示例中，显示基板包括基底，多条数据线，多条栅极线，由数据线和栅极线限定的像素，有机薄膜晶体管和像素电极。 数据线在基座上并且朝向第一方向。 栅极线在与第一方向交叉的第二方向上取向。 有机薄膜晶体管包括电连接到数据线之一的源电极，电连接到栅极线之一的栅电极和有机半导体层。 像素电极设置在像素中并电连接到有机薄膜晶体管。 像素电极包括透明氧氮化物。

公开(公告)号：US07998786B2

公开(公告)日：2011-08-16

申请号：US12369839

申请日：2009-02-12

Applicant: Je-Hun Lee ,  Jae-Kyeong Lee ,  Chang-Oh Jeong ,  Beom-Seok Cho

Inventor： Je-Hun Lee ,  Jae-Kyeong Lee ,  Chang-Oh Jeong ,  Beom-Seok Cho

IPC: H01L21/00

CPC classification number: H01L29/66765 ,  H01L27/12 ,  H01L29/458 ,  H01L29/4908

Abstract: Multi-layered wiring for a larger flat panel display is formed by depositing molybdenum on a substrate in presence of a precursor gas containing at least one oxygen, nitrogen and carbon to form a molybdenum layer. An aluminum layer is deposited on the molybdenum layer. Another metal layer may be formed on the aluminum layer. The molybdenum layer has a face-centered cubic (FCC) lattice structure with a preferred orientation of (111).

Abstract translation: 在含有至少一个氧，氮和碳的前体气体的存在下，在基板上沉积钼以形成钼层，形成用于较大平板显示器的多层布线。 铝层沉积在钼层上。 可以在铝层上形成另一金属层。 钼层具有面心立方（FCC）晶格结构，其优选取向为（111）。

公开(公告)号：US07863607B2

公开(公告)日：2011-01-04

申请号：US11980871

申请日：2007-10-30

Applicant: Je-Hun Lee ,  Do-Hyun Kim ,  Chang-Oh Jeong

Inventor： Je-Hun Lee ,  Do-Hyun Kim ,  Chang-Oh Jeong

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: The disclosed thin film transistor array panel includes an insulating substrate, a channel layer including an oxide formed on the insulating substrate. A gate insulating is layer formed on the channel layer and a gate electrode is formed on the gate insulating layer. An interlayer insulating layer is formed on the gate electrode and a data line formed on the interlayer insulating layer and includes a source electrode, wherein the data line is made of a first conductive layer and a second conductive layer. A drain electrode formed on the interlayer insulating layer, and includes the first conductive layer and the second conductive layer. A pixel electrode extends from the first conductive layer of the drain electrode and a passivation layer formed on the data line and the drain electrode. A spacer formed on the passivation layer.

Abstract translation: 所公开的薄膜晶体管阵列面板包括绝缘基板，包括形成在绝缘基板上的氧化物的沟道层。 栅极绝缘层是在沟道层上形成的层，栅电极形成在栅极绝缘层上。 在栅电极上形成层间绝缘层，形成在层间绝缘层上的数据线，包括源电极，其中数据线由第一导电层和第二导电层构成。 一种形成在层间绝缘层上的漏极，包括第一导电层和第二导电层。 像素电极从漏电极的第一导电层和形成在数据线和漏电极上的钝化层延伸。 形成在钝化层上的间隔物。

公开(公告)号：US07851920B2

公开(公告)日：2010-12-14

申请号：US11486720

申请日：2006-07-15

Applicant: Je-hun Lee ,  Chang-oh Jeong ,  Beom-seok Cho ,  Yang-ho Bae

Inventor： Je-hun Lee ,  Chang-oh Jeong ,  Beom-seok Cho ,  Yang-ho Bae

IPC: H01L23/48

CPC classification number: H01L27/124 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L23/53238 ,  H01L27/12 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10T29/49117 ,  H01L2924/00

Abstract: Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate, and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including copper nitride and a copper conductive layer formed on the barrier layer and including copper or a copper alloy.

Abstract translation: 提供一种线结构，制造线的方法，薄膜晶体管（TFT）基板以及制造TFT基板的方法。 导线结构包括在基板上形成的阻挡层，其包括形成在阻挡层上并包括铜或铜合金的氮化铜和铜导电层。

公开(公告)号：US07843518B2

公开(公告)日：2010-11-30

申请号：US11975968

申请日：2007-10-22

Applicant: Sung-Hoon Yang ,  So-Woon Kim ,  Chong-Chul Chai ,  Chang-Oh Jeong ,  Eun-Guk Lee ,  Je-Hun Lee

Inventor： Sung-Hoon Yang ,  So-Woon Kim ,  Chong-Chul Chai ,  Chang-Oh Jeong ,  Eun-Guk Lee ,  Je-Hun Lee

IPC: G02F1/1343

CPC classification number: G02F1/136213 ,  G02F1/136227 ,  G02F2201/40

Abstract: A display substrate includes respective pluralities of gate lines, data lines, switching elements, storage lines, pixel electrodes, and an organic insulation layer. The gate lines and the data lines define a plurality of unit pixels. The storage lines are respectively formed adjacent to the respective drain electrodes of the respective switching elements of respective rows of the unit pixels. The organic insulation layer has a hole that is formed within the area of each of the unit pixels and that extends from a contact area formed at a portion of the corresponding drain electrode of the pixel to a portion corresponding to the storage line thereof. This arrangement enables the marginal area needed to prevent mismatch of the hole in the areas of the contact area and the storage line to be reduced, thereby increasing the aperture ratio of the display.

Abstract translation: 显示基板包括多条栅极线，数据线，开关元件，存储线，像素电极和有机绝缘层。 栅极线和数据线限定多个单位像素。 存储线分别形成为与各行的单位像素的各个开关元件的各个漏电极相邻。 有机绝缘层具有形成在每个单位像素的区域内的孔，并且从形成在像素的相应漏电极的一部分的接触区域延伸到对应于其存储线的部分。 这种布置使得能够减小接触区域和存储线的区域中的孔的失配所需的边缘区域，从而增加显示器的开口率。