公开(公告)号：US08035102B2

公开(公告)日：2011-10-11

申请号：US11646832

申请日：2006-12-27

申请人： Je-Hun Lee ,  Young-Min Kim ,  Bo-Sung Kim ,  Jun-Young Lee ,  Sung-Wook Kang

发明人： Je-Hun Lee ,  Young-Min Kim ,  Bo-Sung Kim ,  Jun-Young Lee ,  Sung-Wook Kang

IPC分类号： H01L29/04

CPC分类号： H01L51/102 ,  G02F1/13439 ,  H01L27/283 ,  H01L51/0541 ,  H01L51/0545

摘要： An improved display substrate is provided to reduce surface defects on insulating layers of organic thin film transistors. Related methods of manufacture are also provided. In one example, a display substrate includes a base, a plurality of data lines, a plurality of gate lines, a pixel defined by the data lines and the gate lines, an organic thin film transistor, and a pixel electrode. The data lines are on the base and are oriented in a first direction. The gate lines are oriented in a second direction that crosses the first direction. The organic thin film transistor includes a source electrode electrically connected to one of the data lines, a gate electrode electrically connected to one of the gate lines, and an organic semiconductor layer. The pixel electrode is disposed in the pixel and electrically connected to the organic thin film transistor. The pixel electrode comprises a transparent oxynitride.

摘要翻译： 提供改进的显示基板以减少有机薄膜晶体管的绝缘层上的表面缺陷。 还提供了相关的制造方法。 在一个示例中，显示基板包括基底，多条数据线，多条栅极线，由数据线和栅极线限定的像素，有机薄膜晶体管和像素电极。 数据线在基座上并且朝向第一方向。 栅极线在与第一方向交叉的第二方向上取向。 有机薄膜晶体管包括电连接到数据线之一的源电极，电连接到栅极线之一的栅电极和有机半导体层。 像素电极设置在像素中并电连接到有机薄膜晶体管。 像素电极包括透明氧氮化物。

公开(公告)号：US20070158652A1

公开(公告)日：2007-07-12

申请号：US11646832

申请日：2006-12-27

申请人： Je-Hun Lee ,  Young-Min Kim ,  Bo-Sung Kim ,  Jun-Young Lee ,  Sung-Wook Kang

发明人： Je-Hun Lee ,  Young-Min Kim ,  Bo-Sung Kim ,  Jun-Young Lee ,  Sung-Wook Kang

IPC分类号： H01L29/04 ,  H01L29/10

CPC分类号： H01L51/102 ,  G02F1/13439 ,  H01L27/283 ,  H01L51/0541 ,  H01L51/0545

摘要： An improved display substrate is provided to reduce surface defects on insulating layers of organic thin film transistors. Related methods of manufacture are also provided. In one example, a display substrate includes a base, a plurality of data lines, a plurality of gate lines, a pixel defined by the data lines and the gate lines, an organic thin film transistor, and a pixel electrode. The data lines are on the base and are oriented in a first direction. The gate lines are oriented in a second direction that crosses the first direction. The organic thin film transistor includes a source electrode electrically connected to one of the data lines, a gate electrode electrically connected to one of the gate lines, and an organic semiconductor layer. The pixel electrode is disposed in the pixel and electrically connected to the organic thin film transistor. The pixel electrode comprises a transparent oxynitride.

摘要翻译： 提供改进的显示基板以减少有机薄膜晶体管的绝缘层上的表面缺陷。 还提供了相关的制造方法。 在一个示例中，显示基板包括基底，多条数据线，多条栅极线，由数据线和栅极线限定的像素，有机薄膜晶体管和像素电极。 数据线在基座上并且朝向第一方向。 栅极线在与第一方向交叉的第二方向上取向。 有机薄膜晶体管包括电连接到数据线之一的源电极，电连接到栅极线之一的栅电极和有机半导体层。 像素电极设置在像素中并电连接到有机薄膜晶体管。 像素电极包括透明氧氮化物。

公开(公告)号：US08241936B2

公开(公告)日：2012-08-14

申请号：US13230111

申请日：2011-09-12

申请人： Je-Hun Lee ,  Young-Min Kim ,  Bo-Sung Kim ,  Jun-Young Lee ,  Sung-Wook Kang

发明人： Je-Hun Lee ,  Young-Min Kim ,  Bo-Sung Kim ,  Jun-Young Lee ,  Sung-Wook Kang

IPC分类号： H01L20/00

CPC分类号： H01L51/102 ,  G02F1/13439 ,  H01L27/283 ,  H01L51/0541 ,  H01L51/0545

摘要： An improved display substrate is provided to reduce surface defects on insulating layers of organic thin film transistors. Related methods of manufacture are also provided. In one example, a display substrate includes a base, a plurality of data lines, a plurality of gate lines, a pixel defined by the data lines and the gate lines, an organic thin film transistor, and a pixel electrode. The data lines are on the base and are oriented in a first direction. The gate lines are oriented in a second direction that crosses the first direction. The organic thin film transistor includes a source electrode electrically connected to one of the data lines, a gate electrode electrically connected to one of the gate lines, and an organic semiconductor layer. The pixel electrode is disposed in the pixel and electrically connected to the organic thin film transistor. The pixel electrode comprises a transparent oxynitride.

摘要翻译： 提供改进的显示基板以减少有机薄膜晶体管的绝缘层上的表面缺陷。 还提供了相关的制造方法。 在一个示例中，显示基板包括基底，多条数据线，多条栅极线，由数据线和栅极线限定的像素，有机薄膜晶体管和像素电极。 数据线在基座上并且朝向第一方向。 栅极线在与第一方向交叉的第二方向上取向。 有机薄膜晶体管包括电连接到数据线之一的源电极，电连接到栅极线之一的栅电极和有机半导体层。 像素电极设置在像素中并电连接到有机薄膜晶体管。 像素电极包括透明氧氮化物。

公开(公告)号：US20070122649A1

公开(公告)日：2007-05-31

申请号：US11595395

申请日：2006-11-08

申请人： Je-Hun Lee ,  Shi-Yul Kim ,  Do-Hyun Kim ,  Byeong-Beom Kim ,  Chang-Oh Jeong ,  Jun-Young Lee ,  Yang-Ho Bae ,  Sung-Wook Kang

发明人： Je-Hun Lee ,  Shi-Yul Kim ,  Do-Hyun Kim ,  Byeong-Beom Kim ,  Chang-Oh Jeong ,  Jun-Young Lee ,  Yang-Ho Bae ,  Sung-Wook Kang

IPC分类号： B32B15/20 ,  B32B19/00 ,  C23C14/00 ,  B05D1/36

CPC分类号： H01L29/458 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/4908 ,  Y10T428/12903

摘要： A conductive structure containing copper is capable of being etched to have a reliable profile where the copper layer is free of corrosion or oxidation includes a barrier layer formed on an insulating or semiconductor substrate followed by a copper layer, a blocking layer and a capping layer. The copper layer includes copper or copper alloy. The barrier layer includes molybdenum (Mo), molybdenum nitride (MoN) or molybdenum alloy which includes at least one of MoW, MoTi, MoNb or MoZr. The blocking layer includes copper nitride, copper oxide or copper oxinitride. The capping layer includes molybdenum, molybdenum nitride (MoN) or molybdenum alloy which includes at least one of MoW, MoTi, MoNb and MoZr.

摘要翻译： 包含铜的导电结构能够被蚀刻以具有可靠的轮廓，其中铜层没有腐蚀或氧化，包括形成在绝缘或半导体衬底上的阻挡层，之后是铜层，阻挡层和覆盖层。 铜层包括铜或铜合金。 阻挡层包括钼（Mo），氮化钼（MoN）或钼合金，其包括MoW，MoTi，MoNb或MoZr中的至少一种。 阻挡层包括氮化铜，氧化铜或氧化氮铜。 覆盖层包括钼，氮化钼（MoN）或钼合金，其包括MoW，MoTi，MoNb和MoZr中的至少一种。

公开(公告)号：US08558230B2

公开(公告)日：2013-10-15

申请号：US12756323

申请日：2010-04-08

申请人： Dong-Hoon Lee ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hee-Tae Kim ,  Chang-Oh Jeong ,  Pil-Sang Yun ,  Ki-Won Kim

发明人： Dong-Hoon Lee ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hee-Tae Kim ,  Chang-Oh Jeong ,  Pil-Sang Yun ,  Ki-Won Kim

IPC分类号： H01L29/04 ,  H01L29/10

CPC分类号： H01L27/1225 ,  H01L27/1214 ,  H01L27/1288 ,  H01L29/7869

摘要： A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.

摘要翻译： 提供薄膜晶体管（TFT）基板及其制造方法。 薄膜晶体管基板可以具有低电阻特性，并且可以减少有源层图案和数据布线之间的相互扩散和接触电阻。 薄膜晶体管基板可以包括形成在绝缘基板上的栅极布线。 氧化物有源层图案可以形成在栅极布线上，并且可以包括第一物质。 数据布线可以形成在氧化物有源层图案上以跨越栅极布线，并且可以包括第二物质。 阻挡层图案可以设置在氧化物活性层图案和数据布线之间，并且可以包括第三物质。

公开(公告)号：US08507956B2

公开(公告)日：2013-08-13

申请号：US13051904

申请日：2011-03-18

申请人： Je-Hun Lee ,  Chang-Oh Jeong ,  Eun-Guk Lee ,  Do-Hyun Kim

发明人： Je-Hun Lee ,  Chang-Oh Jeong ,  Eun-Guk Lee ,  Do-Hyun Kim

IPC分类号： H01L33/00 ,  H01L29/43 ,  H01L29/49 ,  H01L29/76

CPC分类号： H01L29/458 ,  H01L27/124 ,  H01L29/4908

摘要： Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including a copper layer and a copper solid solution layer.

摘要翻译： 提供线结构，制造线的方法，薄膜晶体管（TFT）基板和制造TFT基板的方法。 导线结构包括在基板上形成的包含铜层和铜固溶体层的阻挡层。

公开(公告)号：US08492770B2

公开(公告)日：2013-07-23

申请号：US13035054

申请日：2011-02-25

申请人： Jae-Woo Park ,  Je-Hun Lee ,  Seong-Jin Lee ,  Yeon-Hong Kim

发明人： Jae-Woo Park ,  Je-Hun Lee ,  Seong-Jin Lee ,  Yeon-Hong Kim

IPC分类号： H01L29/786

CPC分类号： H01L29/04 ,  H01L29/786

摘要： A thin film transistor includes a gate electrode formed on a substrate, a semiconductor pattern overlapped with the gate electrode, a source electrode overlapped with a first end of the semiconductor pattern and a drain electrode overlapped with a second end of the semiconductor pattern and spaced apart from the source electrode. The semiconductor pattern includes an amorphous multi-elements compound including a II B element and a VI A element or including a III A element and a V A element and having an electron mobility no less than 1.0 cm2/Vs and an amorphous phase, wherein the VI A element excludes oxygen. Thus, a driving characteristic of the thin film transistor may be improved.

摘要翻译： 薄膜晶体管包括形成在基板上的栅极电极，与栅电极重叠的半导体图案，与半导体图案的第一端重叠的源电极和与半导体图案的第二端重叠并分开的漏电极 源极电极。 半导体图案包括包含IIB元素和VIA元素或包含IIIA元素和VA元素并且具有不小于1.0cm 2 / Vs的电子迁移率的无定形多元素化合物和非晶相，其中VI 一个元素排除氧气。 因此，可以提高薄膜晶体管的驱动特性。

公开(公告)号：US08416897B2

公开(公告)日：2013-04-09

申请号：US12561076

申请日：2009-09-16

申请人： Il-Gu Lee ,  Hyun-Gu Park ,  Je-Hun Lee ,  Sok-Kyu Lee

发明人： Il-Gu Lee ,  Hyun-Gu Park ,  Je-Hun Lee ,  Sok-Kyu Lee

IPC分类号： H04B7/10 ,  H04L27/06

CPC分类号： H04W52/028 ,  H04L2027/0016 ,  H04L2027/0067 ,  H04W52/0245 ,  Y02D70/142

摘要： An apparatus for reducing power consumption of a receiver in a high-speed wireless communication system and a control method thereof are provided. The apparatus for processing a signal in a receiver of a wireless communication system includes a carrier sensor configured to sense a carrier used in the wireless communication system, a decoder configured to decode the detected carrier signal to a signal and data, and a controller configured to control supplying power and a clock only to the carrier sensor during carrier sensing, and supplying power and a clock to an overall receiver when a carrier is sensed.

摘要翻译： 提供一种用于降低高速无线通信系统中的接收机的功耗的装置及其控制方法。 用于处理无线通信系统的接收机中的信号的装置包括被配置为感测在无线通信系统中使用的载波的载波传感器，被配置为将检测到的载波信号解码为信号和数据的解码器，以及控制器， 在载波检测期间仅控制向载波传感器提供功率和时钟，并且当检测到载波时，向整个接收机提供功率和时钟。

公开(公告)号：US20110149820A1

公开(公告)日：2011-06-23

申请号：US12970630

申请日：2010-12-16

申请人： Je-Hun Lee ,  Sok-Kyu Lee

发明人： Je-Hun Lee ,  Sok-Kyu Lee

IPC分类号： H04W52/02

CPC分类号： H04W52/0235 ,  Y02D70/00 ,  Y02D70/142 ,  Y02D70/23

摘要： A method for adaptively performing power saving in a station of a wireless communication system includes: receiving first power-save capability information from an AP, the first power-save capability information containing information on power-save schemes supported by a MAC layer of the AP; transmitting second power-save capability information to the AP in response to the first power-save capability information, the second power-save capability information containing information on power-save schemes supported by a MAC layer of the station; transmitting power-save policy information, into which properties of traffics used in the station are reflected, to the AP; and performing a power-save function while interworking with the MAC layer of the station, according to the power-save policy information based on a predetermined power-save scheme.

摘要翻译： 一种用于在无线通信系统的站中自适应地执行省电的方法包括：从AP接收第一省电能力信息，所述第一节电能力信息包含由所述AP的MAC层支持的关于节能方案的信息 ; 响应于所述第一节电能力信息向所述AP发送第二节电能力信息，所述第二节电能力信息包含由所述站的MAC层支持的关于节能方案的信息; 向AP提供将车站使用的业务属性反映的节电政策信息; 并且根据基于预定的省电方案的省电策略信息，在与站的MAC层互通的同时执行省电功能。

公开(公告)号：US07902553B2

公开(公告)日：2011-03-08

申请号：US11930536

申请日：2007-10-31

申请人： Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

发明人： Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

IPC分类号： H01L29/04

CPC分类号： H01L27/1255 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765

摘要： A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

摘要翻译： 薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层 该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。