公开(公告)号：US06875466B2

公开(公告)日：2005-04-05

申请号：US10300760

申请日：2002-11-21

申请人： Hidefumi Matsui ,  Junichi Kitano

发明人： Hidefumi Matsui ,  Junichi Kitano

IPC分类号： G03F7/38 ,  H01L21/00 ,  H01L21/027 ,  H01L21/677 ,  B05D3/12

CPC分类号： H01L21/67178 ,  H01L21/67748 ,  H01L21/67751

摘要： The wafer coated with the resist is deliberately placed in the vapor before being transferred to an aligner that exposes the resist on the wafer, the vapor, for example, the moisture, uniformly adheres onto the resist on the wafer. As a result, the substrate can uniformly be exposed in the following exposing process, and the uniformity of the line width and the like can be improved.

摘要翻译： 涂覆有抗蚀剂的晶片被有意地放置在蒸气中，然后被转移到将晶片上的抗蚀剂暴露的对准器，蒸气，例如水分，均匀地粘附在晶片上的抗蚀剂上。 结果，可以在随后的曝光工序中均匀地曝光基板，能够提高线宽等的均匀性。

公开(公告)号：US20050048421A1

公开(公告)日：2005-03-03

申请号：US10964695

申请日：2004-10-15

申请人： Junichi Kitano ,  Yuji Matsuyama ,  Takahiro Kitano

发明人： Junichi Kitano ,  Yuji Matsuyama ,  Takahiro Kitano

IPC分类号： G03F7/38 ,  G03F7/16 ,  H01L21/00 ,  H01L21/027 ,  G03C1/76

CPC分类号： H01L21/67253 ,  G03F7/168 ,  H01L21/67028 ,  Y10S414/135

摘要： In a coating and developing treatment for a substrate, the present invention comprises the steps of: supplying a coating solution to the substrate to form a coating layer on the substrate; performing a developing treatment for the substrate in the processing zone after it undergoes an exposure processing by an aligner not included in the system; and carrying the substrate into the chamber after the step of forming the coating layer and before the exposure processing and thereafter reducing the pressure inside the airtightly closed chamber to a predetermined pressure to remove impurities adhering to the substrate inside the chamber from the substrate for a predetermined time, wherein the predetermined pressure and the predetermined time are adjusted based on the density of the impurities measured inside the processing zone. According to the present invention, impurities at a molecule level such as moisture, vapor, oxygen, ozone, and organic substance, and impurities such as fine particles, which adhere to the coating layer of the substrate, can be removed before the exposure processing so that the exposure processing can be performed in a preferable condition. Since the pressure, time, and pressure-reducing speed at the time of reducing the pressure are adjusted based on the density of the impurities measured in a predetermined position, the impurities adhering to the substrate such as moisture and oxygen can be removed under a preferable minimum requirement condition according to the adhering amount of the impurities.

摘要翻译： 在基材的涂布和显影处理中，本发明包括以下步骤：向基材供给涂布溶液以在基材上形成涂层; 在不包括在系统中的对准器进行曝光处理之后，对处理区中的基板进行显影处理; 并且在形成涂层的步骤之后并且在曝光处理之前将衬底运送到室中，然后将气密封闭室内的压力降低到预定压力，以从衬底移除附着在室内的衬底上的杂质，以预定 时间，其中基于在处理区内测量的杂质的密度来调整预定压力和预定时间。 根据本发明，在曝光处理之前可以除去附着在基材的涂层上的分子水平的杂质如水分，蒸汽，氧气，臭氧和有机物质以及粘附到基材的涂层的杂质如细颗粒 可以在优选的条件下进行曝光处理。 由于基于在预定位置测量的杂质的密度来调节压力降低时的压力，时间和减压速度，因此可以在优选的情况下去除附着在基底上的杂质，例如水分和氧气 最低要求条件根据杂质的粘附量。

公开(公告)号：US06620251B2

公开(公告)日：2003-09-16

申请号：US09799562

申请日：2001-03-07

申请人： Junichi Kitano

发明人： Junichi Kitano

IPC分类号： C23C1412

CPC分类号： H01L21/02046 ,  B08B7/0057 ,  G03F7/085 ,  G03F7/16 ,  H01L21/67028 ,  Y10S134/902

摘要： A closed container composed of a lid body and a lower container are provided in a cover body, and a supply pipe for nitrogen gas is connected to the cover body. A light source unit including UV lamps in the lid body is provided to face a mounting table in the closed container, and a gas supply path for HMDS gas is provided on the outer side from the light source unit. The inside of the cover body is first brought to a nitrogen atmosphere, a wafer is irradiated with ultraviolet rays with the lid body of the closed container opened to perform cleaning. Subsequently, the lid body is closed and the HMDS gas is introduced into the closed container to perform hydrophobic processing for the wafer. This removes deposits such as organic substances adhering to the wafer W through the irradiation with the ultraviolet rays, thereby improving coating properties of a resist solution.

摘要翻译： 由盖体和下容器构成的密闭容器设置在盖体内，氮气供给管与盖体连接。 在盖体内设置包括紫外灯的光源单元，以与封闭容器内的安装台相对，并且在从光源单元的外侧设置用于HMDS气体的气体供给路径。 首先将盖体的内部带入氮气氛，在密封容器的盖体开放的状态下用紫外线照射晶片进行清洗。 随后，关闭盖体，并将HMDS气体引入密封容器中以对晶片进行疏水处理。 通过紫外线的照射来除去附着在晶片W上的有机物质等沉积物，提高抗蚀剂溶液的涂布性。

公开(公告)号：US09209506B2

公开(公告)日：2015-12-08

申请号：US13332709

申请日：2011-12-21

申请人： Junichi Kitano ,  Haruo Ikeda ,  Shunsaku Koga

发明人： Junichi Kitano ,  Haruo Ikeda ,  Shunsaku Koga

IPC分类号： H01P7/04 ,  H01P1/205

CPC分类号： H01P1/2053

摘要： A resonant circuit includes a plurality of cables, each of which including: an outer conductor made of a conductive material in a cylindrical manner; an inner conductor, made of a conductive material in an elongated manner, and disposed inside of the outer conductor; and an insulator disposed between the outer conductor and the inner conductor. The plurality of cables is disposed in series in a circular manner. The inner conductor, provided in one of adjacently disposed cables among the plurality of cables, is conductively connected to the outer conductor of another of the adjacently disposed cable.

摘要翻译： 谐振电路包括多个电缆，每个电缆包括：由导电材料制成的外导体，其为圆柱形; 由导电材料制成的内导体，并且设置在外导体的内部; 以及设置在外导体和内导体之间的绝缘体。 多个电缆以圆形方式串联布置。 设置在多个电缆中的相邻布置的电缆之一中的内部导体导电地连接到相邻布置的电缆的另一个的外部导体。

公开(公告)号：US08366872B2

公开(公告)日：2013-02-05

申请号：US13161185

申请日：2011-06-15

申请人： Kenji Tsutsumi ,  Junichi Kitano ,  Osamu Miyahara ,  Hideharu Kyouda

发明人： Kenji Tsutsumi ,  Junichi Kitano ,  Osamu Miyahara ,  Hideharu Kyouda

IPC分类号： C23F1/02

CPC分类号： C23C26/00 ,  G03F1/80 ,  G03F7/707 ,  G03F7/70916 ,  H01L21/308 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/67225 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/68707

摘要： According to the present invention, during the photolithography processing of a substrate, exposure processing is performed immediately after removal of a coating film on the rear surface of the substrate, and a coating film is formed on the rear surface of the substrate immediately after the exposure processing. Thereafter, etching treatment and so on are performed, and a series of these treatment and processing steps are performed a predetermined number of times. The coating film has been formed on the rear surface of the substrate at the time for the etching treatment, so that even if the coating film gets minute scratches, the rear surface of the substrate itself is protected by the coating film and thus never scratched. Further, since the coating film on the rear surface of the substrate is removed immediately before the exposure processing, the rear surface of the substrate can be flat for the exposure processing.

摘要翻译： 根据本发明，在基板的光刻处理中，在除去基板背面的涂膜后立即进行曝光处理，在曝光后立即在基板的背面形成涂膜 处理。 此后，进行蚀刻处理等，并且进行一系列这些处理和处理步骤预定次数。 在蚀刻处理时，已经在基板的背面形成了涂膜，使得即使涂膜受到微小的划痕，基板本身的后表面也被涂膜保护，因此不会被刮伤。 此外，由于在曝光处理之前立即除去基板后表面上的涂膜，所以基板的后表面可以是平坦的，用于曝光处理。

公开(公告)号：US08111372B2

公开(公告)日：2012-02-07

申请号：US12515368

申请日：2007-11-19

申请人： Hideharu Kyouda ,  Junichi Kitano ,  Taro Yamamoto

发明人： Hideharu Kyouda ,  Junichi Kitano ,  Taro Yamamoto

IPC分类号： H01L21/66

CPC分类号： G03F7/70958 ,  G03F7/70341 ,  G03F7/70991 ,  H01L21/6715

摘要： A coating film forming apparatus for immersion light exposure includes one or more coating units configured to apply a resist film or a resist film and an additional film onto a substrate, one or more thermally processing units configured to perform a thermal process, a defect eliciting unit configured to perform a process for eliciting a latent defect of a coating film at an edge portion of the substrate, a checking unit configured to check a state of the coating film after the process by the defect eliciting unit, a control section configured to use a check result obtained by the checking unit to make a judgment of the state of the coating film and permit transfer of the substrate to the light exposure apparatus, and a cleaning unit configured to perform cleaning on the substrate before the process by the defect eliciting unit.

摘要翻译： 用于浸没曝光的涂膜形成装置包括一个或多个涂覆单元，其被配置为将抗蚀剂膜或抗蚀剂膜和附加膜施加到基板上，一个或多个热处理单元，被配置为执行热处理，缺陷引出单元 被配置为执行用于在所述基板的边缘部分处引导涂膜的潜在缺陷的处理，所述检查单元被配置为在所述缺陷引出单元处理之后检查所述涂膜的状态;控制部，被配置为使用 由检查单元获得的检查结果以判断涂膜的状态并允许将基板转移到曝光装置;以及清洁单元，被配置为在由缺陷引出单元进行处理之前在基板上进行清洁。

公开(公告)号：US08054443B2

公开(公告)日：2011-11-08

申请号：US12273165

申请日：2008-11-18

申请人： Junichi Kitano ,  Osamu Miyahara ,  Shinya Wakamizu

发明人： Junichi Kitano ,  Osamu Miyahara ,  Shinya Wakamizu

IPC分类号： G03B27/32 ,  G03B27/54

CPC分类号： G03F7/40

摘要： A developing method is used for subjecting a light-exposed resist film disposed on a wafer W to a developing process by a developing solution and a rinsing process by a rinsing liquid. In a state where the resist film on the wafer W is wet with the developing solution or rinsing liquid before a drying process is performed on the wafer W, a chemical liquid (curing chemical liquid), which contains a resist curing aid contributory to curing of a resist film remaining on the wafer W, is supplied onto a surface of the wafer W. Then, ultraviolet rays are radiated onto a surface of the wafer to cure a resist film remaining on the wafer W by a synergistic effect of the resist curing aid and the ultraviolet rays thus radiated, so as to prevent pattern fall.

摘要翻译： 使用显影方法对设置在晶片W上的曝光抗蚀剂膜进行显影液的显影处理和通过漂洗液的漂洗处理。 在对晶片W进行干燥处理之前，晶片W上的抗蚀剂膜与显影液或漂洗液体湿润的状态下，含有抗蚀剂固化助剂的化学液（固化化学液） 保留在晶片W上的抗蚀剂膜被提供到晶片W的表面上。然后，通过抗蚀剂固化助剂的协同效应将紫外线辐射到晶片的表面上以固化残留在晶片W上的抗蚀剂膜 并且因此辐射紫外线，以防止图案下降。

公开(公告)号：US07857530B2

公开(公告)日：2010-12-28

申请号：US12216751

申请日：2008-07-10

申请人： Yuko Ono ,  Junichi Kitano

发明人： Yuko Ono ,  Junichi Kitano

IPC分类号： G03D5/00 ,  G03C5/00 ,  B08B3/12

CPC分类号： G03D5/00 ,  G03F7/3028 ,  G03F7/322 ,  Y10S134/902

摘要： In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.

公开(公告)号：US20080204675A1

公开(公告)日：2008-08-28

申请号：US11958798

申请日：2007-12-18

申请人： Hisashi Kawano ,  Junichi Kitano ,  Hitoshi Kosugi ,  Koichi Hontake ,  Masashi Enomoto

发明人： Hisashi Kawano ,  Junichi Kitano ,  Hitoshi Kosugi ,  Koichi Hontake ,  Masashi Enomoto

IPC分类号： G03B27/52 ,  G03F7/26

CPC分类号： G03F7/162 ,  G03F7/168 ,  G03F7/3021

摘要： A coating/developing apparatus includes a process section including processing units to perform a series of processes for resist coating and development; an interface section disposed between the process section and immersion light exposure apparatus; and a drying section disposed in the interface section to dry the substrate immediately after the immersion light exposure process. The drying section includes a process container configured to accommodate the substrate, a substrate support member configured to place the substrate thereon, a temperature-adjusted gas supply mechanism configured to supply a temperature-adjusted gas into the process container, and an exhaust mechanism configured to exhaust the process container. The drying section is arranged to dry the substrate by supplying the temperature-adjusted gas into the process container with the substrate placed on the substrate support member, while exhausting the process container.

摘要翻译： 一种涂布/显影装置，包括：处理部，包括进行抗蚀剂涂布和显影的一系列处理的处理单元; 布置在处理部分和浸没曝光装置之间的界面部分; 以及设置在界面部分中的干燥部分，以在浸没曝光处理之后立即干燥基板。 所述干燥部包括被配置为容纳所述基板的处理容器，被配置为将所述基板放置在其上的基板支撑部件，被配置为将经温度调节的气体供应到所述处理容器中的温度调节气体供给机构，以及配置为 排出过程容器。 干燥部被布置成通过将衬底放置在基板支撑构件上的温度调节气体供给到处理容器中，同时排出处理容器来干燥基板。

公开(公告)号：US20080079917A1

公开(公告)日：2008-04-03

申请号：US11898694

申请日：2007-09-14

申请人： Yuko Ono ,  Junichi Kitano

发明人： Yuko Ono ,  Junichi Kitano

IPC分类号： G03B27/52 ,  G03F7/30

CPC分类号： G03D5/00 ,  G03F7/3028 ,  G03F7/322 ,  Y10S134/902

摘要： In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.