公开(公告)号：US20130098553A1

公开(公告)日：2013-04-25

申请号：US13595351

申请日：2012-08-27

Applicant: Kallol Bera ,  Kenneth S. Collins ,  Shahid Rauf ,  Leonid Dorf

Inventor： Kallol Bera ,  Kenneth S. Collins ,  Shahid Rauf ,  Leonid Dorf

IPC: C23F1/08

CPC classification number: H01J37/3233 ,  H01J2237/06366

Abstract: A plasma reactor that generates plasma in a workplace processing chamber by an electron beam, has an electron beam source chamber with a wall opposite to the electron beam propagation direction, the wall being profiled to compensate for a non-uniformity in electron beam density distribution.

Abstract translation: 通过电子束在工作场所处理室中产生等离子体的等离子体反应器具有电子束源室，其具有与电子束传播方向相反的壁，壁被成型以补偿电子束密度分布的不均匀性。

公开(公告)号：US20130098551A1

公开(公告)日：2013-04-25

申请号：US13595201

申请日：2012-08-27

Applicant: Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

Inventor： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

IPC: C23F1/08

CPC classification number: H01J37/3233 ,  H01J37/32082

Abstract: A plasma reactor that generates plasma in workpiece processing chamber by a electron beam, has an electron beam source chamber and an array of plasma sources facing the electron beam source chamber for affecting plasma electron density in different portions of the processing chamber. In another embodiment, an array of separately controlled electron beam source chambers is provided.

Abstract translation: 通过电子束在工件处理室中产生等离子体的等离子体反应器具有电子束源室和面向电子束源室的等离子体源的阵列，用于影响处理室的不同部分中的等离子体电子密度。 在另一个实施例中，提供了独立控制的电子束源室的阵列。

公开(公告)号：US08080479B2

公开(公告)日：2011-12-20

申请号：US11733858

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01L21/302

CPC classification number: C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

Abstract: A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.

Abstract translation: 在等离子体反应器室中处理工件的方法包括经由电极将RF功率耦合到腔室中的等离子体，RF功率在包括基频f的频率范围内是可变频率的。 该方法还包括将电极耦合到具有作为基频f的谐波的谐振VHF频率F的谐振器，以便在谐波处产生VHF功率。 该方法通过控制从f向F转换为F的发电机的功率比例来控制基波f附近的功率与谐波F功率的比值，以便控制等离子体离子密度分布。

公开(公告)号：US07989329B2

公开(公告)日：2011-08-02

申请号：US11963034

申请日：2007-12-21

Applicant: Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

Inventor： Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

IPC: H01L21/38

CPC classification number: H01L21/2254 ,  H01L21/2253

Abstract: A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.

Abstract translation: 提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。 在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。 将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。 在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。 通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。 反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。 除去挥发性化合物。 如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

公开(公告)号：US07967996B2

公开(公告)日：2011-06-28

申请号：US11801409

申请日：2007-05-08

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Shahid Rauf ,  Ajit Balakrishna ,  Valentin N. Todorow ,  Kartik Ramaswamy ,  Martin Jeffrey Salinas ,  Imad Yousif ,  Walter R. Merry ,  Ying Rui ,  Michael R. Rice

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Shahid Rauf ,  Ajit Balakrishna ,  Valentin N. Todorow ,  Kartik Ramaswamy ,  Martin Jeffrey Salinas ,  Imad Yousif ,  Walter R. Merry ,  Ying Rui ,  Michael R. Rice

IPC: B44C1/22

CPC classification number: B08B7/00 ,  B08B7/0035 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/0209 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68764

Abstract: A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the chamber, and backside polymer is removed by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer backside. For front side photoresist removal, the wafer is positioned away from the ceiling and below the side outlet of the localized plasma source, and front side photoresist is remove by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer front side.

Abstract translation: 提供了用于从工件的前侧从工件和/或光致抗蚀剂的背面去除聚合物的方法。 对于背面聚合物去除，晶片位于天花板附近，位于具有通过室的侧壁的侧出口的局部或远程等离子体源的上方，并且通过在从侧面出口流动等离子体副产物的同时旋转工件来去除背面聚合物 到晶圆背面。 对于前侧光致抗蚀剂去除，晶片远离天花板并位于局部等离子体源的侧出口下方，并且通过在从侧出口流到晶片正面的等离子体副产物流动的同时旋转工件来除去前侧光致抗蚀剂 。

公开(公告)号：US07967944B2

公开(公告)日：2011-06-28

申请号：US12129244

申请日：2008-05-29

Applicant: Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

Inventor： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

IPC: C23F1/00

CPC classification number: H05H1/46 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32935

Abstract: A workpiece is processed in a plasma reactor chamber using stabilization RF power delivered into the chamber, by determining changes in load impedance from RF parameters sensed at an RF source or bias power generator and resolving the changes in load impedance into first and second components thereof, and changing the power level of the stabilization RF power as a function one of the components of changes in load impedance.

Abstract translation: 通过根据在RF源或偏置功率发生器处感测的RF参数确定负载阻抗的变化并将负载阻抗的变化解析成其第一和第二分量，在等离子体反应器室中使用稳定的RF功率来处理工件， 并且将稳定化RF功率的功率电平作为负载阻抗变化的组成部分之一变化。

公开(公告)号：US20110048644A1

公开(公告)日：2011-03-03

申请号：US12787198

申请日：2010-05-25

Applicant: Kenneth S. Collins ,  Andrew Nguyen ,  Martin Jeffrey Salinas ,  Imad Yousif ,  Ming Xu

Inventor： Kenneth S. Collins ,  Andrew Nguyen ,  Martin Jeffrey Salinas ,  Imad Yousif ,  Ming Xu

IPC: H01L21/3065

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32935

Abstract: Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.

Abstract translation: 等离子体蚀刻速率分布的偏斜校正是通过倾斜顶置RF源功率施加器围绕倾斜轴进行的，该倾斜轴的角度由处理数据中的偏斜确定。 完整的自由度通过结合三个轴向运动伺服机构来提供，该伺服机构支撑顶板RF源功率施加器悬挂在其上的浮动板。

公开(公告)号：US20110023780A1

公开(公告)日：2011-02-03

申请号：US12511377

申请日：2009-07-29

Applicant: KARTIK RAMASWAMY ,  HIROJI HANAWA ,  KENNETH S. COLLINS ,  LAWRENCE WONG ,  SAMER BANNA ,  ANDREW NGUYEN

Inventor： KARTIK RAMASWAMY ,  HIROJI HANAWA ,  KENNETH S. COLLINS ,  LAWRENCE WONG ,  SAMER BANNA ,  ANDREW NGUYEN

IPC: H03H7/38 ,  B05C13/00

CPC classification number: H01P7/04

Abstract: Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.

Abstract translation: 本文提供了阻抗匹配网络的实施例。 在一些实施例中，阻抗匹配网络可以包括具有内部和外部导体的同轴谐振器。 可以提供调谐电容器以可变地控制同轴谐振器的谐振频率。 调谐电容器可以由第一调谐电极和第二调谐电极和中间电介质形成，其中第一调谐电极由内部导体的一部分形成。 可以提供负载电容器，用于可变地耦合从内部导体到负载的能量。 负载电容器可以由内部导体，可调负载电极和中间电介质形成。

公开(公告)号：US20090297404A1

公开(公告)日：2009-12-03

申请号：US12129202

申请日：2008-05-29

Applicant: STEVEN C. SHANNON ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

Inventor： STEVEN C. SHANNON ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

IPC: G05D17/00

CPC classification number: H01J37/32935 ,  H01J37/32082 ,  H01J37/32183

Abstract: A plasma reactor, having source and bias RF power generators of different frequencies, is provided with a controller responsive to fluctuations in plasma load impedance measured at one of the generators to modulate the output of the other generator to compensate for the fluctuations.

Abstract translation: 具有不同频率的源极和偏置RF功率发生器的等离子体反应器设置有响应于在一个发生器处测量的等离子体负载阻抗的波动的控制器，以调制另一发生器的输出以补偿波动。

公开(公告)号：US20090295296A1

公开(公告)日：2009-12-03

申请号：US12129244

申请日：2008-05-29

Applicant: Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

Inventor： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

IPC: H05H1/00

CPC classification number: H05H1/46 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32935

Abstract: A workpiece is processed in a plasma reactor chamber using stabilization RF power delivered into the chamber, by determining changes in load impedance from RF parameters sensed at an RF source or bias power generator and resolving the changes in load impedance into first and second components thereof, and changing the power level of the stabilization RF power as a function one of the components of changes in load impedance.

Abstract translation: 通过根据在RF源或偏置功率发生器处感测的RF参数确定负载阻抗的变化并将负载阻抗的变化解析成其第一和第二分量，在等离子体反应器室中使用稳定的RF功率来处理工件， 并且将稳定化RF功率的功率电平作为负载阻抗变化的组成部分之一变化。