公开(公告)号：US20100078667A1

公开(公告)日：2010-04-01

申请号：US12547571

申请日：2009-08-26

Applicant: Wei-Kang Cheng ,  Jia-Lin Li ,  Shyi-Ming Pan ,  Kuo-Chin Huang

Inventor： Wei-Kang Cheng ,  Jia-Lin Li ,  Shyi-Ming Pan ,  Kuo-Chin Huang

IPC: H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/486 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/56 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a light-emitting diode (LED).The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract translation: 本发明涉及一种发光二极管（LED）。该LED包括一个LED管芯，一个或多个金属焊盘和荧光层。 本发明的特征包括为了方便后续的布线和包装过程，将金属垫留下来露出。 此外，本发明提供的LED是单一的混合芯片，其可以直接包装而不需要在包装胶上涂布荧光粉。 由于荧光层和包装胶不是同时处理并且具有不同的材料，所以可以有效地降低封装LED中的应力问题。

公开(公告)号：US07635871B2

公开(公告)日：2009-12-22

申请号：US12106277

申请日：2008-04-19

Applicant: Shyi-Ming Pan ,  Wei-Kang Cheng ,  Kuo-Chin Huang

Inventor： Shyi-Ming Pan ,  Wei-Kang Cheng ,  Kuo-Chin Huang

IPC: H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC classification number: H01L33/44 ,  H01L33/22 ,  H01L33/508 ,  H01L33/60 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45139 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/00

Abstract: A light emitting diode (LED) with higher illumination efficiency is revealed. The LED includes a LED chip and an optical layer arranged on the bottom of the LED chip. The optical layer is a light-guiding layer, a light reflective layer or an energy-conversion layer that increases light emitting efficiency of the LED. Furthermore, a rough layer is disposed between the LED chip and the optical layer so as to increase surface area of the LED chip. Thus light emitted from the LED chip enters the optical layer more easily and the illumination efficiency of the LED is increased.

Abstract translation: 揭示了具有较高照明效率的发光二极管（LED）。 LED包括配置在LED芯片底部的LED芯片和光学层。 光学层是增加LED的发光效率的光导层，光反射层或能量转换层。 此外，在LED芯片和光学层之间设置粗糙层以增加LED芯片的表面积。 因此，从LED芯片发出的光更容易进入光学层，并且LED的照明效率提高。

公开(公告)号：US20080303034A1

公开(公告)日：2008-12-11

申请号：US11979963

申请日：2007-11-13

Applicant: Kuo-Chin Huang ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Chi-Yang Chuang ,  Fen-Ren Chien

Inventor： Kuo-Chin Huang ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Chi-Yang Chuang ,  Fen-Ren Chien

IPC: H01L33/00

CPC classification number: H01L33/405 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.

Abstract translation: 公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。 发光器件包括衬底，衬底上的n型半导体层，n型半导体层上的有源层，有源层上的p型半导体层，p型半导体层上的导电层 设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。 对应于第一电极，在p型半导体层上设置电阻反射层或接触窗，使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。 当光传输到导电层以发射时，其不被第一电极吸收或屏蔽。 因此，电流在导电层上有效地分布。 因此，提高了LED的亮度和效率。 此外，改善了导电层和p型半导体层之间的粘附性，从而可以提高制造工艺期间的金属剥离问题。

公开(公告)号：USD428760S

公开(公告)日：2000-08-01

申请号：US102278

申请日：1999-03-22

Applicant: Kuo-Chin Huang

Designer： Kuo-Chin Huang

公开(公告)号：USD364240S

公开(公告)日：1995-11-14

申请号：US33699

申请日：1995-01-18

Applicant: Kuo-Chin Huang

Designer： Kuo-Chin Huang

公开(公告)号：US09534768B2

公开(公告)日：2017-01-03

申请号：US14324372

申请日：2014-07-07

Applicant: Kuo-Chin Huang

Inventor： Kuo-Chin Huang

IPC: F21V29/74 ,  F21V19/00 ,  F21V13/04 ,  F21V5/04 ,  F21V29/70 ,  F21Y101/00

CPC classification number: F21V19/004 ,  F21V13/04 ,  F21V19/0035 ,  F21V19/0045 ,  F21V29/70 ,  F21Y2101/00 ,  F21Y2115/10

Abstract: A light convergence module with a heat dissipation function is revealed. It comprises a substrate, an assembling unit, a light convergence lampshade, and a heat sink, wherein the assembling unit with a first surface assembling to the substrate and a second surface assembling to the light convergence lampshade comprises a locating block and a plurality of position limiting blocks for respectively engaging with a locating slot and a plurality of position limiting slots of the substrate, and two buckles for correspondingly clasping two concave slots of the substrate to limit the substrate in position, and wherein the heat sink comprises a plurality of interspaces formed between every two adjacent heat dissipation fins for securing the buckles of the assembling unit and allowing the heat sink to closely dispose on the substrate.

Abstract translation: 揭示了具有散热功能的光汇聚模块。 其包括基板，组装单元，聚光灯罩和散热器，其中具有组装到基板的第一表面的组装单元和组装到聚光灯罩的第二表面包括定位块和多个位置 用于分别与所述基板的定位槽和多个位置限制槽接合的限位块，以及两个带扣，用于相应地夹紧所述基板的两个凹槽以将所述基板限制在适当位置，并且其中所述散热器包括多个间隙 在两个相邻的散热翅片之间，用于固定组装单元的带扣并且允许散热器紧密地布置在基板上。

公开(公告)号：US20150241022A1

公开(公告)日：2015-08-27

申请号：US14186256

申请日：2014-02-21

Applicant: KUO-CHIN HUANG

Inventor： KUO-CHIN HUANG

IPC: F21V5/04 ,  F21V5/00

CPC classification number: F21V5/045 ,  F21S41/143 ,  F21S41/255 ,  F21V5/008 ,  F21V5/04

Abstract: The invention relates to a lamp structure for improvement of a luminous efficiency. A effective light incident angle of a primary lens is equal to or larger than a light emergent angle of a light source, and the light emergent angle of the primary lens is equal to or smaller than an effective light incident angle of a terminal lens, so that the effect of enhancing light brightness and a light shape projected from the terminal lens is achieved.

Abstract translation: 本发明涉及一种用于提高发光效率的灯结构。 主透镜的有效光入射角度等于或大于光源的光出射角，并且主透镜的出射角度等于或小于端子透镜的有效光入射角，因此 可以实现提高从终端镜头投光的亮度和光的形状的效果。

公开(公告)号：US08698175B2

公开(公告)日：2014-04-15

申请号：US12547571

申请日：2009-08-26

Applicant: Wei-Kang Cheng ,  Jia-Lin Li ,  Shyi-Ming Pan ,  Kuo-Chin Huang

Inventor： Wei-Kang Cheng ,  Jia-Lin Li ,  Shyi-Ming Pan ,  Kuo-Chin Huang

IPC: H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/486 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/56 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a light-emitting diode (LED). The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract translation: 本发明涉及一种发光二极管（LED）。 LED包括LED管芯，一个或多个金属焊盘和荧光层。 本发明的特征包括为了方便后续的布线和包装过程，将金属垫留下来露出。 此外，本发明提供的LED是单一的混合芯片，其可以直接包装而不需要在包装胶上涂布荧光粉。 由于荧光层和包装胶不是同时处理并且具有不同的材料，所以可以有效地降低封装LED中的应力问题。

公开(公告)号：US20090267095A1

公开(公告)日：2009-10-29

申请号：US12234652

申请日：2008-09-20

Applicant: Wei-Kang CHENG ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Yin-Cheng Chu ,  Kuo-Chin Huang

Inventor： Wei-Kang CHENG ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Yin-Cheng Chu ,  Kuo-Chin Huang

IPC: H01L33/00

CPC classification number: H01L33/46 ,  H01L33/64

Abstract: The present invention provides a light-emitting device with a reflection layer and the structure of the reflection layer. The reflection layer comprises a variety of dielectric materials. The reflection layer includes a plurality of dielectric layers. The materials of the plurality of dielectric layers have two or more types with two or more thicknesses, except for the combination of two material types and two thicknesses, for forming the reflection layer with a variety of structures. The reflection layer according to the present invention can be applied to light-emitting diodes of various types to form new light-emitting devices. Owing to its excellent reflectivity, the reflection layer can improve light-emitting efficiency of the light-emitting devices.

Abstract translation: 本发明提供一种具有反射层的发光装置和反射层的结构。 反射层包括各种介电材料。 反射层包括多个电介质层。 除了两种材料类型和两种厚度的组合之外，多个电介质层的材料具有两种或更多种类型，具有两种或更多种厚度，用于形成具有各种结构的反射层。 根据本发明的反射层可以应用于各种类型的发光二极管，以形成新的发光器件。 由于反射率优异，因此能够提高发光元件的发光效率。

公开(公告)号：US20100078671A1

公开(公告)日：2010-04-01

申请号：US12354820

申请日：2009-01-16

Applicant: Kuo-Chin HUANG ,  Shyi-Ming Pan ,  Hung-Li Pan ,  Cheng-Kuo Huang ,  Wei-Kang Cheng ,  Yi-Sheng Ting

Inventor： Kuo-Chin HUANG ,  Shyi-Ming Pan ,  Hung-Li Pan ,  Cheng-Kuo Huang ,  Wei-Kang Cheng ,  Yi-Sheng Ting

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L33/20

Abstract: A nitride based semiconductor light emitting device is revealed. The light emitting device includes a light emitting epitaxial layer, a P-type electrode and a N-type electrode. The P-type electrode and the N-type electrode are disposed on the light emitting epitaxial layer. The light emitting device features on that the N-type electrode is arranged on the inner side of the P-type electrode. The P-type electrode extends toward the N-type electrode along the edge of the light emitting epitaxial layer and the N-type electrode extends inward along the inner side of the P-type electrode. By means of the electrode pattern with special design, the light emitting area of the light emitting device is increased.

Abstract translation: 揭示了一种基于氮化物的半导体发光器件。 发光器件包括发光外延层，P型电极和N型电极。 P型电极和N型电极设置在发光外延层上。 发光器件的特征在于N型电极布置在P型电极的内侧。 P型电极沿着发光外延层的边缘朝向N型电极延伸，并且N型电极沿着P型电极的内侧向内延伸。 通过具有特殊设计的电极图案，发光器件的发光面积增加。