SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE
    11.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE 有权
    半导体发光器件封装

    公开(公告)号:US20100012967A1

    公开(公告)日:2010-01-21

    申请号:US12443659

    申请日:2007-12-18

    Abstract: A semiconductor light emitting device package according to an embodiment comprising: a package body comprising a groove section; an electrode in the groove section; at least one semiconductor light emitting device electrically connected to the electrode in the groove section of the package body; an interconnection pattern on an outer peripheral surface of the package body and electrically connected to the electrode, wherein a part of the interconnection pattern is on a bottom surface of the package body; and a metal pattern is on the bottom surface of the package body corresponding to an area in which the semiconductor light emitting device is located.

    Abstract translation: 根据实施例的半导体发光器件封装,包括:封装体,包括沟槽部分; 槽部中的电极; 至少一个半导体发光器件电连接到封装主体的沟槽部分中的电极; 在所述封装主体的外周表面上的电连接到所述电极的互连图案,其中所述互连图案的一部分在所述封装体的底表面上; 并且金属图案位于与半导体发光器件所在的区域对应的封装主体的底表面上。

    Nanomachined mechanical components using nanoplates, methods of fabricating the same and methods of manufacturing nanomachines
    12.
    发明授权
    Nanomachined mechanical components using nanoplates, methods of fabricating the same and methods of manufacturing nanomachines 失效
    使用纳米板的纳米机械部件,其制造方法和制造纳米机械的方法

    公开(公告)号:US07557044B2

    公开(公告)日:2009-07-07

    申请号:US11263476

    申请日:2005-10-31

    Abstract: Disclosed herein is a method of fabricating nano-components using nanoplates, including the steps of: printing a grid on a substrate using photolithography and Electron Beam Lithography; spraying an aqueous solution dispersed with nanoplates onto the grid portion to position the nanoplates on the substrate; depositing a protective film of a predetermined thickness on the substrate and the nanoplates positioned on the substrate; ion-etching the nanoplates deposited with the protective film by using a Focused Ion Beam (FIB) or Electron Beam Lithography; and eliminating the protective film remaining on the substrate using a protective film remover after the ion-etching of the nanoplates, and a method of manufacturing nanomachines or nanostructures by transporting such nano-components using a nano probe and assembling with other nano-components. The present invention makes it possible to fabricate the high-quality nano-components in a more simple and easier manner at a lower cost, as compared to other conventional methods. Further, the present invention provides a method of implementing nanomachines through combination of such nano-components and biomolecules, etc.

    Abstract translation: 本文公开了使用纳米板制造纳米组分的方法,包括以下步骤:使用光刻和电子束光刻在衬底上印刷栅格; 将分散有纳米板的水溶液喷射到栅格部分上以将纳米板定位在基底上; 在衬底和位于衬底上的纳米板上沉积预定厚度的保护膜; 通过使用聚焦离子束(FIB)或电子束光刻法离子蚀刻沉积有保护膜的纳米板; 并且在纳米板的离子蚀刻之后使用保护膜去除剂去除残留在基板上的保护膜,以及通过使用纳米探针传输这种纳米成分并与其他纳米成分组装来制造纳米机械或纳米结构的方法。 与其他常规方法相比,本发明可以以更简单和更容易的方式以更低的成本制造高质量的纳米组分。 此外,本发明提供了通过这些纳米组分和生物分子等的组合来实现纳米机器的方法。

    X-ray mask with a micro-actuator
    17.
    发明授权
    X-ray mask with a micro-actuator 失效
    具有微执行器的X射线掩模

    公开(公告)号:US06501824B1

    公开(公告)日:2002-12-31

    申请号:US10046170

    申请日:2002-01-16

    CPC classification number: G03F7/707 G03F7/70783

    Abstract: An X-ray mask is integrated with a micro-actuator. The X-ray mask includes a mask portion, a mask holder portion, at least one elasticized supporter and a micro-actuator unit. The mask portion has a thin shuttle mass and an X-ray absorber attached on the shuttle mass. The mask holder portion is formed around the mask portion with a predetermined distance maintained therebetween. The elasticized supporter connects the mask portion and the mask holder portion elastically. The micro-actuator unit is prepared between the mask portion and the mask holder portion to precisely control a position of the mask portion when a voltage is applied.

    Abstract translation: X射线掩模与微致动器集成。 X射线掩模包括掩模部分,掩模保持器部分,至少一个弹性支撑件和微致动器单元。 掩模部分具有薄的穿梭质量和附着在梭体上的X射线吸收体。 掩模保持器部分围绕掩模部分形成,其间保持预定距离。 弹性支撑件弹性地连接面罩部分和面罩支架部分。 微致动器单元在掩模部分和掩模保持器部分之间制备,以在施加电压时精确地控制掩模部分的位置。

    Light emitting diode having multi-cell structure and method of manufacturing the same
    18.
    发明申请
    Light emitting diode having multi-cell structure and method of manufacturing the same 有权
    具有多单元结构的发光二极管及其制造方法

    公开(公告)号:US20130134462A1

    公开(公告)日:2013-05-30

    申请号:US13504522

    申请日:2010-11-02

    Abstract: Disclosed is a light emitting diode having a multi-cell structure including a number of unit cells. The light emitting diode is capable of reducing light loss of the light emitting diode surface and improving light efficiency by bonding pads to be formed for contact between mesa etching regions for forming an electrode of the existing n-type semiconductor layers and p-type semiconductor layers. The light emitting diode is also capable of controlling chip size and manufacturing chips of different sizes from each other even when going through the same chip manufacturing process as the related art.

    Abstract translation: 公开了具有包括多个单电池的多单元结构的发光二极管。 发光二极管能够减少发光二极管表面的光损失,并且通过形成用于形成现有n型半导体层的电极的台面蚀刻区域和p型半导体层之间的接合焊盘来提高光效率 。 即使经历与现有技术相同的芯片制造工艺,发光二极管也能够控制芯片尺寸和制造不同尺寸的芯片。

    LIGHT-EMITTING DIODE HAVING A WAVELENGTH CONVERSION MATERIAL LAYER, AND METHOD FOR FABRICATING SAME
    19.
    发明申请
    LIGHT-EMITTING DIODE HAVING A WAVELENGTH CONVERSION MATERIAL LAYER, AND METHOD FOR FABRICATING SAME 审中-公开
    具有波长转换材料层的发光二极管及其制造方法

    公开(公告)号:US20120086040A1

    公开(公告)日:2012-04-12

    申请号:US13376714

    申请日:2010-06-10

    Abstract: Provided is a light-emitting diode having a wavelength conversion material and a method for fabricating the same. The light-emitting diode comprises: a base structure; a light-emitting diode chip arranged on the base structure; and a wavelength conversion material layer arranged on the light-emitting diode chip, such that the area adjacent the upper surface of the light-emitting diode chip is thicker than the area adjacent to the side surface of the light-emitting diode chip. In addition, the method for fabricating a light-emitting diode comprises: a step of arranging the light-emitting diode chip on the base structure; and a step of arranging a wavelength conversion material layer containing a light-transmitting photocurable material on the light-emitting diode chip, such that the area thereof adjacent to the upper surface of the light-emitting diode chip is thicker than the area thereof adjacent to the side surface of the light-emitting diode chip.

    Abstract translation: 提供一种具有波长转换材料的发光二极管及其制造方法。 发光二极管包括:基座结构; 布置在基底结构上的发光二极管芯片; 以及布置在发光二极管芯片上的波长转换材料层,使得与发光二极管芯片的上表面相邻的区域比与发光二极管芯片的侧表面相邻的区域更厚。 此外,制造发光二极管的方法包括:将发光二极管芯片布置在基底结构上的步骤; 以及在发光二极管芯片上布置含有透光性光固化性材料的波长转换材料层的步骤,使得其与发光二极管芯片的上表面相邻的面积比邻近发光二极管芯片的面积厚 发光二极管芯片的侧面。

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