Abstract:
A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.
Abstract:
An inkjet printhead and a method of driving the inkjet printhead include a flow channel substrate having a pressure chamber, and a piezoelectric actuator formed on the flow channel substrate to apply a driving force to the pressure chamber to eject ink. The piezoelectric actuator includes a piezoelectric layer formed on the flow channel substrate to correspond to the pressure chamber, and a plurality of common electrodes and a plurality of driving electrodes alternately arranged in a length direction of the piezoelectric layer.
Abstract:
A method of forming a piezoelectric actuator of an inkjet head formed on a vibrating plate to provide a driving power for ejecting ink to each of pressure chambers is provided. The method includes forming a lower electrode on a vibrating plate, forming a piezoelectric layer on the lower electrode to be located above each of pressure chambers, forming a protecting layer covering the lower electrode and the piezoelectric layer, exposing an upper surface of the piezoelectric layer by decreasing a thickness of the protecting layer and the piezoelectric layer, forming an upper electrode on the upper surface of the piezoelectric layer, removing the protecting layer. According to the present invention, since the piezoelectric layer having a flat upper surface is formed in uniform figure, area and thickness of the upper electrode formed thereon is uniformly controlled.
Abstract:
The nanoparticle electroluminescence device includes: a front electrode formed of a transparent conductive material; a rear electrode formed of a conductive material; and an emitting layer interposed between the front electrode and the rear electrode and comprising a plurality of nanoparticles having a core/shell structure comprising a core formed of silicon and a shell formed of silicon oxide or silicon nitride on the surface of the core.
Abstract:
Disclosed herein are an inertial sensor and a method of manufacturing the same. The inertial sensor 100 according to a preferred embodiment of the present invention may include a membrane 110, a piezoelectric body 130 formed over the membrane 110, an electrode 140 formed on the piezoelectric body 130, a first pad 150 electrically connected with the electrode 140, a second pad 160 electrically connected with an integrated circuit 170, and a connection member 180 electrically connecting the first pad 150 with the second pad 160.
Abstract:
A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.
Abstract:
A piezoelectric actuator of an inkjet head and a method of forming the piezoelectric actuator. The piezoelectric actuator is formed on a vibration plate to provide a driving force to each of a plurality of pressure chambers. The piezoelectric actuator includes a lower electrode formed on the vibration plate, a piezoelectric layer formed on the lower electrode at a position corresponding to each of the pressure chambers, a supporting pad formed on the lower electrode, the supporting pad contacting one end of the piezoelectric layer and extending away from the one end of the piezoelectric layer, and an upper electrode extending from a top surface of the piezoelectric layer to a top surface of the supporting pad. The upper electrode is bonded to a driving circuit above the supporting pad to receive a voltage from the driving circuit. The piezoelectric layer may have substantially the same length as the pressure chamber. The supporting pad may be formed of a photosensitive polymer and may have substantially the same height as the piezoelectric layer. The upper electrode may include a first portion formed on the piezoelectric layer and a second portion formed on the supporting pad, and the second portion may be wider than the first portion.
Abstract:
A method to form a thick layer by screen printing and a method to form a piezoelectric actuator of an inkjet head. The method to form the thick layer including forming a guide groove in a surface to a predetermined depth, and forming the thick layer by applying a material to the surface inside the guide groove through screen printing. The method to form the piezoelectric actuator including forming an insulating layer on a top surface of a vibration plate and forming a guide groove in the top surface of the vibration plate or an insulating layer to a predetermined depth at a position corresponding to each of a plurality of pressure chambers, forming a lower electrode on the top surface of the insulating layer; forming a piezoelectric layer inside the guide groove by screen printing, and forming an upper electrode on a top surface of the piezoelectric layer.
Abstract:
A silicon wet etching method to form at least two elements having different shapes in a silicon substrate using at least two wet etching processes includes forming a first etch mask made of parylene on a surface of the silicon substrate, forming a first element in the substrate by wet etching the silicon substrate for a first time using the first etch mask, forming a second etch mask made of a silicon oxide layer on the surface of the silicon substrate, and forming a second element by wet etching the silicon substrate for a second time using the second etch mask.
Abstract:
A method for fabricating a semiconductor light emitting device is provided. The method involves: forming a light emitting construct including a p-type electrode on a n-type substrate; etching a bottom surface of the n-type substrate; and forming an n-type electrode on the etched bottom surface of the n-type substrate. The bottom surface of the n-type substrate is wet or dry etched. The bottom surface of the n-type substrate is free from damage so that stable attachment of the etched bottom surface of the n-type substrate is ensured with improved properties of the light emitting device which may be a semicoductor laser diode.