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    Magnetic memory device having soft reference layer
    11.
    发明授权
    Magnetic memory device having soft reference layer 有权
    具有软参考层的磁存储器件

    公开(公告)号：US06891212B2

    公开(公告)日：2005-05-10

    申请号：US10697191

    申请日：2003-10-30

    Applicant: Manish Sharma ,  Thomas C. Anthony ,  Lung Tran

    Inventor： Manish Sharma ,  Thomas C. Anthony ,  Lung Tran

    IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L29/76

    CPC classification number: G11C11/16

    Abstract: A magnetic memory device includes first and second ferromagnetic layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions. The first ferromagnetic layer has a higher coercivity than the second ferromagnetic layer. The magnetic memory device further includes a structure for forming a closed flux path with the second ferromagnetic layer.

    Abstract translation: 磁存储器件包括第一和第二铁磁层。 每个铁磁层具有可以在两个方向中的任一方向上取向的磁化。 第一铁磁层具有比第二铁磁层更高的矫顽力。 磁存储器件还包括用于与第二铁磁层形成闭合磁通路径的结构。

    Resistive memory device and method for making the same
    12.
    发明申请
    Resistive memory device and method for making the same 失效
    电阻记忆装置及其制造方法

    公开(公告)号：US20050093092A1

    公开(公告)日：2005-05-05

    申请号：US10695710

    申请日：2003-10-29

    Applicant: Lung Tran ,  Andrew Van Brocklin ,  Warren Jackson ,  Janice Nickel

    Inventor： Lung Tran ,  Andrew Van Brocklin ,  Warren Jackson ,  Janice Nickel

    IPC: G11C11/16 ,  G11C17/16 ,  G11C17/18 ,  H01L27/10 ,  H01L29/00

    CPC classification number: H01L27/101 ,  G11C11/16 ,  G11C17/16

    Abstract: A resistive cross point array memory device comprising a plurality of word lines extending in a row direction, a plurality of bit lines extending in a column direction such that a plurality of cross points is formed at intersections between the word and bit lines, and at least one memory element formed in at least one of the cross points. The memory element comprises a first tunnel junction having a bottom conductor, a top conductor, a barrier layer adjacent the bottom conductor, and wherein the bottom conductor comprises a non-uniform upper surface.

    Abstract translation: 一种电阻式交叉点阵列存储器件，包括沿行方向延伸的多条字线，沿列方向延伸的多条位线，使得多个交叉点形成在字和位线之间的交叉处，至少 一个存储元件形成在至少一个交叉点上。 存储元件包括具有底部导体，顶部导体，邻近底部导体的阻挡层的第一隧道结，并且其中底部导体包括不均匀的上表面。

    Printed circuit board printing system
    16.
    发明授权
    Printed circuit board printing system 有权
    印刷电路板印刷系统

    公开(公告)号：US07668487B2

    公开(公告)日：2010-02-23

    申请号：US12481310

    申请日：2009-06-09

    Applicant: Manish Sharma ,  Lung Tran

    Inventor： Manish Sharma ,  Lung Tran

    IPC: G03G15/10

    CPC classification number: H04L45/00 ,  G03G15/10 ,  G03G15/224 ,  G03G15/225 ,  G03G15/6585 ,  H04L45/24 ,  H04L45/245 ,  H04L45/60 ,  H05K3/1266 ,  H05K3/207 ,  H05K2201/0257 ,  H05K2203/0126 ,  H05K2203/0517 ,  Y02D50/30

    Abstract: The invention provides a printed circuit board (PCB) printing system. In a particular embodiment, the system includes a liquid electrophotographic printing device. At least one supplier of electrically conductive ink supplying electrically conductive ink to the electrophotographic printing device is also provided. In addition, at least one supplier of dielectric ink supplying dielectric ink to the electrophotographic printing device is also provided. The liquid electrophotographic printing device is operable to apply the electrically conductive ink and the dielectric ink to a provided substrate such that substantially immiscible boundary delineation occurs at any points of contact between the applied electrically conducive ink and the applied dielectric ink. An appropriate method of use for the rendering of a printed circuit board is also provided.

    Abstract translation: 本发明提供一种印刷电路板（PCB）印刷系统。 在特定实施例中，系统包括液体电子照相印刷装置。 还提供了向电子照相打印装置供应导电油墨的导电油墨的至少一个供应商。 此外，还提供了向电子照相打印装置供应电介质油墨的至少一个介电油墨供应商。 液体电子照相打印装置可操作以将导电油墨和电介质油墨施加到所提供的基底上，使得在施加的电导墨和所施加的电介质墨之间的任何接触点处发生基本上不混溶的边界描绘。 还提供了适用于印刷电路板的再现的方法。

    Integrated circuit memory devices having magnetic memory cells therein that utilize dual-ferromagnetic data layers
    17.
    发明授权
    Integrated circuit memory devices having magnetic memory cells therein that utilize dual-ferromagnetic data layers 有权
    其中具有利用双铁磁数据层的磁存储单元的集成电路存储器件

    公开(公告)号：US07457153B1

    公开(公告)日：2008-11-25

    申请号：US11286009

    申请日：2005-11-23

    Applicant: Manish Sharma ,  Lung Tran

    Inventor： Manish Sharma ,  Lung Tran

    IPC: G11C7/00

    CPC classification number: G11C11/16

    Abstract: An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic insulating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic insulating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.

    Abstract translation: 一种包括多个存储器单元的示例性存储器阵列，每个存储器单元包括第一铁磁层，通过非磁性绝缘层与第一铁磁层隔开的第二铁磁层，并通过以下方式磁耦合到第一铁磁层： 来自第一铁磁层的去磁场，第二铁磁层上方的间隔层，以及间隔层上方的基准层。 第一铁磁层，非磁性绝缘层和第二铁磁层组合起到存储单元的数据层的作用。

    Two conductor thermally assisted magnetic memory
    19.
    发明授权
    Two conductor thermally assisted magnetic memory 有权
    两导体热辅助磁存储器

    公开(公告)号：US07057920B2

    公开(公告)日：2006-06-06

    申请号：US10832912

    申请日：2004-04-26

    Applicant: Frederick A. Perner ,  Thomas C. Anthony ,  Robert C Walmsley ,  Lung Tran

    Inventor： Frederick A. Perner ,  Thomas C. Anthony ,  Robert C Walmsley ,  Lung Tran

    IPC: G11C11/14

    CPC classification number: G11C11/16 ,  G11C11/1675

    Abstract: A method of performing a thermally assisted write operation on a selected two conductor spin valve memory (SVM) cell having a material wherein the coercivity is decreased upon an increase in temperature. In a particular embodiment, a first write magnetic field is established by a first write current flowing from a first voltage potential to a second voltage potential as applied to the first conductor. A second write magnetic field is established by a second write current flowing from a third voltage potential to a fourth voltage potential as applied to the second conductor. The voltage potential of the first conductor is greater than the voltage potential of the second conductor. As a result, a third current, flows from the first conductor through the SVM cell to the second conductor. The SVM cell has an internal resistance such that the flowing current generates heat within the SVM cell. As the SVM cell is self heated, the coercivity of the SVM cell falls below the combined write magnetic fields.

    Abstract translation: 在具有其中矫顽力在温度升高时减小的材料的所选择的两个导体自旋阀存储器（SVM）单元上进行热辅助写入操作的方法。 在特定实施例中，当施加到第一导体时，通过从第一电压电位流向第二电压电位的第一写入电流建立第一写入磁场。 第二写入磁场通过施加到第二导体的从第三电压电位流向第四电压电位的第二写入电流来建立。 第一导体的电压电位大于第二导体的电压电位。 结果，第三电流从第一导体流过SVM电池流到第二导体。 SVM单元具有内部电阻，使得流动电流在SVM单元内产生热量。 由于SVM单元是自加热的，所以SVM单元的矫顽力低于组合的写入磁场。

    Magnetic memory cell structure
    20.
    发明申请
    Magnetic memory cell structure 有权

    公开(公告)号：US20050052905A1

    公开(公告)日：2005-03-10

    申请号：US10658158

    申请日：2003-09-08

    Applicant: Lung Tran ,  Thomas Anthony

    Inventor： Lung Tran ,  Thomas Anthony

    IPC: G11C11/15 ,  G11C11/00 ,  G11C11/02 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

    CPC classification number: G11C11/16

    Abstract: The invention includes a magnetic memory cell. The magnetic memory cell includes a reference layer having a preset magnetization. A barrier layer is formed adjacent to the reference layer. A sense layer is formed adjacent to the barrier layer. A first conductive write line is electrically connected to the reference layer. The magnetic memory cell further includes a second conductive write line having a gap, the gap being filled by at least a portion of the sense layer. A write current conducting through the second conductive write line is at least partially conducted through the portion of the sense layer, the write current increasing a temperature of the sense layer.

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