公开(公告)号：US4943943A

公开(公告)日：1990-07-24

申请号：US633863

申请日：1984-07-24

申请人： Yutaka Hayashi ,  Yoshikazu Kojima ,  Masaaki Kamiya ,  Kojiro Tanaka

发明人： Yutaka Hayashi ,  Yoshikazu Kojima ,  Masaaki Kamiya ,  Kojiro Tanaka

IPC分类号： H01L27/112 ,  G11C16/04 ,  G11C16/26 ,  G11C17/00 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L29/788 ,  H01L29/792 ,  H03K19/0944

CPC分类号： G11C16/0425 ,  G11C16/26 ,  G11C17/00

摘要： The present invention provides a read-out circuit for a nonvolatile memory which is capable of extracting a widely-fluctuating output voltage, even when the threshold value of the nonvolatile memory changes only a little.

摘要翻译： 本发明提供了一种非易失性存储器的读出电路，即使在非易失性存储器的阈值变化很小时也能够提取广泛波动的输出电压。

公开(公告)号：US3974636A

公开(公告)日：1976-08-17

申请号：US520352

申请日：1974-11-01

申请人： Masaaki Kamiya

发明人： Masaaki Kamiya

IPC分类号： G04G19/02 ,  G04C3/00 ,  H03F1/40

CPC分类号： G04G19/02

摘要： A booster circuit for a liquid crystal display device of a timepiece is disclosed. The booster circuit is a sort of a blocking oscillator having a transformer of which turns ratio is 1 : n (where n is a real number). The rectified output voltage of said blocking oscillator is superposed on the voltage of the cell so that the output voltage of the booster circuit is higher than of the blocking oscillator. A smoothing condenser has ample capacitance to have a larger time constant than the fluctuation time of the voltage of the cell owing to mechanical shock.

摘要翻译： 公开了一种用于钟表的液晶显示装置的升压电路。 升压电路是一种具有匝数比为1：n（其中n为实数）的变压器的阻塞振荡器。 所述阻塞振荡器的整流输出电压叠加在电池的电压上，使得升压电路的输出电压高于阻塞振荡器。 平滑电容器具有足够的电容，具有比由于机械冲击导致的电池电压的波动时间更长的时间常数。

公开(公告)号：US20120274305A1

公开(公告)日：2012-11-01

申请号：US13456266

申请日：2012-04-26

申请人： Masaaki Kamiya ,  Ryuji Ariyoshi

发明人： Masaaki Kamiya ,  Ryuji Ariyoshi

IPC分类号： G05F3/02

CPC分类号： G05F3/16

摘要： A voltage regulator comprises an N type depletion MOS transistor having a drain connected to the positive electrode side of a power supply, a source connected to a stabilizing capacitor, and a gate receiving a constant reference voltage, and has an output terminal at the source of the N type depletion MOS transistor. In this simple circuit configuration, the voltage regulator can markedly reduce a noise carried on an output voltage.

摘要翻译： 电压调节器包括N型耗尽型MOS晶体管，其漏极连接到电源的正极侧，连接到稳定电容器的源极和接收恒定参考电压的栅极，并且具有输出端子 N型耗尽型MOS晶体管。 在这种简单的电路配置中，电压调节器可以显着降低输出电压带来的噪声。

公开(公告)号：US20070063768A1

公开(公告)日：2007-03-22

申请号：US11517024

申请日：2006-09-07

申请人： Masaaki Kamiya

发明人： Masaaki Kamiya

IPC分类号： H03G3/20

CPC分类号： H03B5/32 ,  H03B5/364 ,  H03F1/0216 ,  H03F3/3022 ,  H03F11/00

摘要： An AC amplifier has an amplification circuit, and a bias circuit connected together by connecting wiring. The bias circuit receives an input of an AC signal from the amplification circuit via the connecting wiring. A DC voltage of the bias circuit conformed to the amplitude of the AC signal of the amplification circuit is supplied to the amplification circuit via the connecting wiring.

摘要翻译： 交流放大器具有放大电路和偏置电路，通过连接布线连接在一起。 偏置电路经由连接布线从放大电路接收AC信号的输入。 与放大电路的交流信号的振幅一致的偏置电路的直流电压通过连接配线供给放大电路。

公开(公告)号：US06222235B1

公开(公告)日：2001-04-24

申请号：US08677541

申请日：1996-07-10

申请人： Yoshikazu Kojima ,  Kazutoshi Ishii ,  Masaaki Kamiya ,  Yasuhiro Moya

发明人： Yoshikazu Kojima ,  Kazutoshi Ishii ,  Masaaki Kamiya ,  Yasuhiro Moya

IPC分类号： H01L2362

CPC分类号： H01L29/7834 ,  H01L27/0266 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/105 ,  H01L29/42364 ,  H01L29/42368 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device including multiple high-voltage drive transistors in its output section is improved in electrostatic withstand voltage by connecting electrostatic protection transistors in parallel with the high-voltage drive transistors connected to the output pads. The drain withstand voltage of the electrostatic protection transistors is made lower than the drain withstand voltage of the high-voltage drive transistors. In addition, the channel length of electrostatic protection transistors is made short to enable efficient bipolar operation of the electrostatic protection transistors.

摘要翻译： 在其输出部分中包括多个高电压驱动晶体管的半导体器件通过将静电保护晶体管与连接到输出焊盘的高电压驱动晶体管并联连接来提高静电耐受电压。 使静电保护晶体管的漏极耐受电压低于高电压驱动晶体管的漏极耐受电压。 此外，静电保护晶体管的沟道长度变短，以实现静电保护晶体管的高效双极性操作。

公开(公告)号：US6040200A

公开(公告)日：2000-03-21

申请号：US834168

申请日：1997-04-14

申请人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

发明人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

IPC分类号： G02F1/136 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/86 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/1368 ,  H01L21/84 ,  H01L21/86 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  Y10S148/012 ,  Y10S148/15 ,  Y10S438/977

摘要： A method of fabricating a light valve device comprises forming a substrate having stacked layers including a light-shielding thin film layer, an insulating film, and a single crystalline semiconductor thin film stacked in this order on a transparent support substrate. A light-shielding layer pattern is formed by selectively etching the stacked layers. Thereafter, a switching element is formed comprised of a transistor having a channel region formed in the single crystalline semiconductor thin film and a main gate electrode covering the channel region. The channel region is provided over the light-shielding pattern layer to prevent light incident from the transparent support substrate from illuminating the channel region to suppress a photo-induced leakage current in the channel region. A transparent electrode is formed and is electrically connected to the switching element. An opposing substrate is then provided over the substrate at the side of the single crystalline semiconductor thin film, and an electro-optical material layer is interposed between the substrate and the opposing substrate.

摘要翻译： 一种制造光阀装置的方法包括在透明支撑基板上依次形成具有堆叠层的衬底，该层叠层包括遮光薄膜层，绝缘膜和单晶半导体薄膜。 通过选择性地蚀刻层叠层来形成遮光层图案。 此后，开关元件由具有在单晶半导体薄膜中形成的沟道区的晶体管和覆盖沟道区的主栅电极构成。 沟道区域设置在遮光图案层上，以防止从透明支撑衬底入射的光照射沟道区域，以抑制沟道区域中的光致感应漏电流。 形成透明电极并与开关元件电连接。 然后在单晶半导体薄膜侧面的衬底上设置相对的衬底，并且在衬底和相对衬底之间插入电光材料层。

公开(公告)号：US5926699A

公开(公告)日：1999-07-20

申请号：US89465

申请日：1998-06-02

申请人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

发明人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

IPC分类号： G02F1/136 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/86 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/1368 ,  H01L21/84 ,  H01L21/86 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  Y10S148/012 ,  Y10S148/15 ,  Y10S438/977

摘要： A method of fabricating a semiconductor device comprises the steps of sequentially forming a first gate electrode and an insulating film over a transparent support substrate, forming a through-hole in the insulating film, forming a semiconductor single crystal silicon thin film over the transparent support substrate by epitaxial growth in the through-hole of the insulating film, forming a transistor element having a channel region formed in the semiconductor single crystal silicon thin film, and forming a second gate electrode over and electrically insulated from the channel region of the transistor element.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在透明支撑衬底上依次形成第一栅电极和绝缘膜，在绝缘膜中形成通孔，在透明支撑衬底上形成半导体单晶硅薄膜 通过在绝缘膜的通孔中进行外延生长，形成具有在半导体单晶硅薄膜中形成的沟道区的晶体管元件，并且在晶体管元件的沟道区上形成第二栅电极并将其电绝缘。

公开(公告)号：US5233211A

公开(公告)日：1993-08-03

申请号：US771756

申请日：1991-10-04

申请人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

发明人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

IPC分类号： G02F1/136 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/86 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/1368 ,  H01L21/84 ,  H01L21/86 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  Y10S148/012 ,  Y10S148/15 ,  Y10S438/977

摘要： The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.

公开(公告)号：US5100698A

公开(公告)日：1992-03-31

申请号：US630002

申请日：1990-12-19

申请人： Masaaki Kamiya ,  Masami Nishitani

发明人： Masaaki Kamiya ,  Masami Nishitani

IPC分类号： C03C17/00

CPC分类号： C03C17/002

摘要： The invention relates to the application of a releasing agent to a surface of a glass plate which is to be subsequently bent in a heated state together with another glass plate thereon. The glass plate is held in a standing posture, and hot air is blown perpendicularly against a surface of the glass plate, and simultaneously an aqueous solution of a releasing agent is sprayed from a plurality of spray nozzles into a space in front of the glass plate surface such that the sprayed solution mixes with the hot air before arriving at the glass plate surface. In an embodiment the spray nozzles are directed parallel to the glass plate or obliquely so as to make a small acute angle with the glass plate and arranged such that the hot air forces droplets of the sprayed solution to move toward the glass plate surface together with the hot air. In another embodiment the spray nozzles are directed perpendicularly toward the glass plate and arranged such that the sprayed solution soon mixes with the hot air. In either case coating of the glass plate surface with the releasing agent and drying of the coating are efficiently accomplished with little possibility of a fall of foreign matter onto the glass plate surface under treatment.

摘要翻译： 本发明涉及在玻璃板的表面上施加脱模剂，该玻璃板随后与加热状态一起与另一玻璃板一起弯曲。 将玻璃板保持为立式姿势，将热空气垂直吹向玻璃板的表面，同时从多个喷嘴喷射脱水剂的水溶液到玻璃板前方的空间 表面，使得喷射溶液在到达玻璃板表面之前与热空气混合。 在一个实施例中，喷嘴平行于玻璃板或倾斜地定向以与玻璃板形成小的锐角，并且布置成使得热空气使喷射溶液的液滴与玻璃板表面一起移动 热气。 在另一个实施例中，喷嘴垂直地朝向玻璃板定向并且布置成使得喷射的溶液很快与热空气混合。 在任一种情况下，均可有效地实现玻璃板表面用脱模剂的涂布和涂层的干燥，而在处理过程中外来物质掉落到玻璃板表面的可能性很小。

公开(公告)号：US4875011A

公开(公告)日：1989-10-17

申请号：US21671

申请日：1987-03-04

申请人： Masayuki Namiki ,  Masanori Gouda ,  Masaaki Kamiya

发明人： Masayuki Namiki ,  Masanori Gouda ,  Masaaki Kamiya

IPC分类号： H01L43/06

CPC分类号： H01L43/065

摘要： Two Hall effect devices are formed on a major surface of a silicon single crystal substrate lying in parallel to the (100) crystalline plane and series-connected to form a magnetic sensor. Each of the Hall effect devices has a pair of drive electrodes spaced apart from each other in a direction substantially parallel to the or crystalline axis and held at different potentials for flowing therebetween a drive current in said direction to drive the Hall effect device and a pair of Hall terminals for developing a Hall voltage when exposed to an external magnetic field. A comparator compares the potentials of two selected Hall terminals of the different Hall devices with each other to produce a compared signal. A switching element is connected to one of the Hall devices to control the potential of the Hall terminals to equalize the potentials of the two selected Hall terminals in response to the compared signal. Two non-selected Hall terminals develop positive and negative Hall voltages, respectively, relative to the selected Hall terminals so that the magnetic sensor produces a totalized Hall voltage of the two Hall effect devices.

摘要翻译： 两个霍尔效应器件形成在平行于（100）晶体平面并且串联连接的硅单晶衬底的主表面上以形成磁传感器。 每个霍尔效应装置具有一对驱动电极，该驱动电极在基本上平行于<100>或<010>晶轴的方向上彼此间隔开并且保持在不同的电位以在其间流动在所述方向上的驱动电流以驱动 霍尔效应器件和一对霍尔端子，用于在暴露于外部磁场时产生霍尔电压。 比较器将不同霍尔器件的两个选定的霍尔端子的电位彼此进行比较，以产生比较的信号。 开关元件连接到霍尔器件中的一个，以响应于所比较的信号来控制霍尔端子的电位来均衡两个所选霍尔端子的电位。 两个未选择的霍尔端子相对于所选择的霍尔端子分别产生正和负霍尔电压，使得磁传感器产生两个霍尔效应器件的累加霍尔电压。