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公开(公告)号：US4943943A
公开(公告)日：1990-07-24
申请号：US633863
申请日：1984-07-24
IPC分类号： H01L27/112 , G11C16/04 , G11C16/26 , G11C17/00 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L29/788 , H01L29/792 , H03K19/0944
CPC分类号： G11C16/0425 , G11C16/26 , G11C17/00
摘要： The present invention provides a read-out circuit for a nonvolatile memory which is capable of extracting a widely-fluctuating output voltage, even when the threshold value of the nonvolatile memory changes only a little.
摘要翻译： 本发明提供了一种非易失性存储器的读出电路，即使在非易失性存储器的阈值变化很小时也能够提取广泛波动的输出电压。
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公开(公告)号：US4821236A
公开(公告)日：1989-04-11
申请号：US013192
申请日：1987-02-09
IPC分类号： H01L21/8247 , G11C14/00 , H01L29/06 , H01L29/788 , H01L29/792 , G11C11/40
CPC分类号： H01L29/0688 , H01L29/7884 , H01L29/7885
摘要： A floating gate type semiconductor non-volatile memory injects carriers from a carrier supply region to a floating gate by a phenomenon called "punch-through" injection in which a space charge region is formed in a semiconductor substrate between the carrier supply region and a carrier injection region so as to accelerate the carriers and inject them into the floating gate without forwardly biasing the carrier injection region or the substrate.
摘要翻译： 浮栅型半导体非易失性存储器通过称为“穿透”注入的载流子从载体供给区域向浮动栅极注入载流子，其中在载流子供给区域和载流子之间的半导体基板中形成空间电荷区域 以便加速载流子并将其注入浮置栅极而不向前偏置载流子注入区域或基板。
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公开(公告)号：US4616340A
公开(公告)日：1986-10-07
申请号：US431304
申请日：1982-09-30
IPC分类号： H01L27/112 , G11C16/04 , G11C17/00 , H01L21/8246 , H01L21/8247 , H01L29/788 , H01L29/792 , G11C7/00
CPC分类号： H01L29/7883
摘要： In the non-volatile semiconductor memory of present invention, a select gate and a floating gate are formed on the surface portion of the substrate between a source region and the drain region also acting as a control gate through a gate oxide film. A part of a channel current is injected into the floating gate at the surface portion under the edge of the floating gate covered by the select gate.
摘要翻译： 在本发明的非挥发性半导体存储器中，通过栅极氧化膜，在源极区域和漏极区域之间的衬底的表面部分上形成选择栅极和浮动栅极，该栅极区域和漏极区域也用作控制栅极。 沟道电流的一部分被注入到由选择栅极覆盖的浮置栅极的边缘下方的表面部分处的浮置栅极中。
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公开(公告)号：US4639755A
公开(公告)日：1987-01-27
申请号：US413492
申请日：1982-08-31
IPC分类号： H01L29/73 , G01K7/01 , H01L21/331 , H01L27/02 , H01L27/082 , H01L27/092 , H01L27/16 , H01L29/66 , H01L35/00 , H01L23/56
CPC分类号： H01L27/16 , H01L27/0211 , H01L27/0825 , H01L27/092 , H01L29/66
摘要： A thermosensitive semiconductor device has a semiconductor substrate of one conductivity type which is used as the common collector of at least two Darlington-connected transistors. The base of the first stage transistor is connected to the common collector to form a first terminal and the emitter of the final stage transistor forms a second terminal. A constant current source is connected between the first and second terminals. To reduce deviations in the temperature response, a second collector region can be used and which can extend to a depth deeper than the depth of the emitter of the final stage transistor to absorb some of the carriers injected by the emitter.
摘要翻译： 热敏半导体器件具有一种导电类型的半导体衬底，其用作至少两个达林顿连接的晶体管的公共集电极。 第一级晶体管的基极连接到公共集电极以形成第一端子，并且最后级晶体管的发射极形成第二端子。 恒流源连接在第一和第二端子之间。 为了减少温度响应的偏差，可以使用第二集电极区域，并且其可以延伸到比最终级晶体管的发射极的深度更深的深度，以吸收由发射极注入的一些载流子。
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公开(公告)号：US4395139A
公开(公告)日：1983-07-26
申请号：US236492
申请日：1981-02-20
CPC分类号： G01K7/01
摘要： A temperature detecting device comprises a semiconductor diode temperature sensor having a resistance characteristic which varies with variations in temperature, and a constant current circuit connected in series. A power source is connected in parallel with the series circuit and connected in parallel with a constant voltage circuit. A resistance ladder circuit is connected between an output terminal of the constant voltage circuit and one terminal of the power source, and an output terminal of the resistance ladder circuit is connected to a first input terminal of a differential amplifier. A second input terminal of the differential amplifier is connected to a connection point of the semiconductor diode and the constant current circuit. In operation, the voltage drops across cumulatively successive resistors of the resistance ladder circuit are compared with the voltage drop across the semiconductor diode temperature sensor by the differential amplifier and in response to a favorable comparison, the output logic state of the differential amplifier changes to thereby provide an output temperature signal.
摘要翻译： 温度检测装置包括具有随温度变化而变化的电阻特性的半导体二极管温度传感器和串联连接的恒流电路。 电源与串联电路并联连接并与恒压电路并联连接。 电阻梯形电路连接在恒压电路的输出端和电源的一端之间，电阻梯形电路的输出端与差分放大器的第一输入端相连。 差分放大器的第二输入端子连接到半导体二极管和恒流电路的连接点。 在操作中，将电阻梯形电路的累积连续电阻器上的电压降低通过差分放大器与半导体二极管温度传感器两端的电压降进行比较，并且响应于有利的比较，差分放大器的输出逻辑状态由此变化 提供输出温度信号。
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公开(公告)号：US5825064A
公开(公告)日：1998-10-20
申请号：US25822
申请日：1993-03-03
申请人： Yutaka Hayashi , Yoshikazu Kojima , Ryoji Takada , Masaaki Kamiya
发明人： Yutaka Hayashi , Yoshikazu Kojima , Ryoji Takada , Masaaki Kamiya
IPC分类号： G11C17/00 , G11C11/56 , G11C14/00 , G11C16/04 , G11C27/00 , H01L21/8246 , H01L21/8247 , H01L27/105 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： G11C27/005 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C14/00
摘要： The semiconductor nonvolatile memory has integrated memory cells, each being operative to carry out writing and reading of information in random-access basis and having an electric charge storage structure effective to memorize the information in nonvolatile state. The information is temporarily written into each memory cell in volatile state, and thereafter the temporarily written information is written at one into the respective electric charge storage structure of each memory cell, thereby effecting quick writing of nonvolatile information into the respective memory cells of multi-bits.
摘要翻译： 半导体非易失性存储器具有集成存储单元，每个存储单元可操作以在随机存取的基础上进行信息的写入和读取，并且具有有效地将信息存储在非易失性状态的电荷存储结构。 该信息以易失性状态临时写入每个存储单元，之后将临时写入的信息一个写入每个存储单元的各个电荷存储结构中，从而将非易失性信息快速写入到多个存储单元的各个存储单元中， 位。
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公开(公告)号：USRE36836E
公开(公告)日：2000-08-29
申请号：US510422
申请日：1995-08-02
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/86 , H01L27/12 , H01L29/78 , H01L29/786 , H01L29/04 , H01L27/01
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/1368 , H01L21/84 , H01L21/86 , H01L27/1203 , H01L27/1214 , H01L29/66772 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , Y10S148/012 , Y10S148/15 , Y10S438/977
摘要： The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.
摘要翻译： 本发明提供一种半导体光阀装置及其制造方法。 该装置包括具有支撑衬底的复合衬底，在所述支撑衬底上形成的遮光薄膜和设置在遮光薄膜上并具有绝缘薄膜的半导体薄膜。 在半导体薄膜上形成由晶体管构成的开关元件和用于驱动光阀的透明电极，并且开关元件和透明电极彼此电连接。 晶体管包括半导体薄膜中的沟道区域和用于控制沟道区域中的导通的主栅电极，并且遮光薄膜层形成为覆盖与所述沟道区域相对的一侧上的沟道区域 ，以便有效地防止背部通道并且切断入射光。
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公开(公告)号：US5982461A
公开(公告)日：1999-11-09
申请号：US834288
申请日：1992-02-14
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/20 , G09G3/36 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/13454 , G02F1/1362 , G02F2202/105
摘要： A light valve device has a drive substrate integrated with a drive electrode. A transistor is connected to the drive electrode and a driving circuit energizes the drive electrode through the transistor. An opposed substrate is provided opposed to the drive electrode, and an electrooptical material layer is disposed between the drive substrate and the opposed substrate. The drive substrate has a structure comprising a substrate layer and a semiconductor single crystal thin film layer. The semiconductor single crystal thin film layer is made by thinning a semiconductor single crystal wafer which has been bonded to the substrate layer. The light valve device has a small size and high pixel density and can be formed using miniaturization technology. The light valve can be used for a small size, high resolution video projector and a color matrix display device.
摘要翻译： PCT No.PCT / JP91 / 00580 Sec。 371日期：1992年2月14日 102（e）日期1992年2月14日PCT 1991年4月26日PCT PCT。 WO91 / 17471 PCT出版物 日期1991年11月14日光阀装置具有与驱动电极集成的驱动基板。 晶体管连接到驱动电极，驱动电路通过晶体管对驱动电极通电。 相对的基板与驱动电极相对设置，电光材料层设置在驱动基板和相对的基板之间。 驱动基板具有包括基板层和半导体单晶薄膜层的结构。 半导体单晶薄膜层通过使已结合到基底层的半导体单晶晶片变薄来制造。 光阀装置具有小尺寸和高像素密度，并且可以使用小型化技术形成。 光阀可用于小尺寸，高分辨率的视频投影机和彩色矩阵显示设备。
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9.发明授权Method of fabricating semiconductor device having epitaxially grown semiconductor single crystal film 失效制造具有外延生长的半导体单晶膜的半导体器件的方法
公开(公告)号：US5759878A
公开(公告)日：1998-06-02
申请号：US496540
申请日：1995-06-29
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/86 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/1368 , H01L21/84 , H01L21/86 , H01L27/1203 , H01L27/1214 , H01L29/66772 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , Y10S148/012 , Y10S148/15 , Y10S438/977
摘要： A method of fabricating a semiconductor device comprises the steps of preparing a transparent support substrate, forming a first gate electrode comprising semiconductor single crystal silicon by epitaxial growth on the transparent support substrate, forming an insulating film over the first gate electrode, forming a through-hole in the insulating film to expose a portion of the first gate electrode, laterally and epitaxially growing a semiconductor single crystal silicon thin film over the transparent substrate by epitaxial growth in the through-hole of the insulating film, forming a transistor element having a channel region formed in the semiconductor single crystal silicon thin film, and forming a second gate electrode over and electrically insulated from the channel region.
摘要翻译： 制造半导体器件的方法包括以下步骤：制备透明支撑衬底，通过在透明支撑衬底上外延生长形成包含半导体单晶硅的第一栅电极，在第一栅电极上形成绝缘膜，形成通孔， 在所述绝缘膜上露出以暴露所述第一栅电极的一部分，通过在所述绝缘膜的通孔中外延生长横向并外延生长所述透明基板上的半导体单晶硅薄膜，形成具有沟道的晶体管元件 形成在所述半导体单晶硅薄膜中的区域，以及在所述沟道区域上形成第二栅电极并与所述沟道区域电绝缘。
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10.发明授权Non-volatile semiconductor memory for volatiley and non-volatiley storing information and writing method thereof 失效用于波动和非易失存储信息的非挥发性半导体存储器及其写入方法
公开(公告)号：US5136540A
公开(公告)日：1992-08-04
申请号：US491945
申请日：1990-03-12
申请人： Yutaka Hayashi , Yoshikazu Kojima , Ryoji Takada , Masaaki Kamiya
发明人： Yutaka Hayashi , Yoshikazu Kojima , Ryoji Takada , Masaaki Kamiya
IPC分类号： G11C17/00 , G11C14/00 , G11C16/04 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7883 , G11C14/00
摘要： A nonvolatile memory has integrated memory cells each operative to carry out writing and reading of information on a random-access basis and each having an electric charge storage structure effective to memorize the information in a nonvolatile state. The information is temporarily written into each memory cell in a volatile state, and thereafter the temporarily written information is written at once into a respective electric charge storage structure of each memory cell, thereby effecting high speed writing of nonvolatile information into the respective memory cells.
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