公开(公告)号：US07676175B2

公开(公告)日：2010-03-09

申请号：US11520941

申请日：2006-09-13

Applicant: Myung-Lae Cho ,  Michael Han ,  Han-Shik Kim ,  Seong-Jin Cho ,  Jun-Ho Jeon

Inventor： Myung-Lae Cho ,  Michael Han ,  Han-Shik Kim ,  Seong-Jin Cho ,  Jun-Ho Jeon

IPC: G03G15/00

CPC classification number: F16D1/10 ,  G03G15/751

Abstract: A photosensitive drum for a printer cartridge, which can be easily mounted on a printer cartridge of which the positions of drum connectors are fixed, is disclosed. The photosensitive drum for a printer cartridge comprises a cylindrical drum having a photosensitive layer on a cylindrical surface thereof; and a pair of rotation shafts which is respectively mounted on the sides of the cylindrical drum for rotating and supporting the cylindrical drum, wherein at least one of the rotation shafts is insert-fitted to the side of the cylindrical drum.

Abstract translation: 公开了一种用于打印机墨盒的感光鼓，其可以容易地安装在其中鼓式连接器的位置被固定的打印机墨盒上。 用于打印机墨盒的感光鼓包括在其圆柱形表面上具有感光层的圆柱形滚筒; 以及一对旋转轴，其分别安装在圆筒形滚筒的侧面上，用于旋转和支撑圆柱形滚筒，其中至少一个旋转轴嵌入到圆筒形滚筒的侧面。

公开(公告)号：US20070237545A1

公开(公告)日：2007-10-11

申请号：US11520941

申请日：2006-09-13

Applicant: Myung-Lae Cho ,  Michael Han ,  Han-Shik Kim ,  Seong-Jin Cho ,  Jun-Ho Jeon

Inventor： Myung-Lae Cho ,  Michael Han ,  Han-Shik Kim ,  Seong-Jin Cho ,  Jun-Ho Jeon

IPC: G03G15/00

CPC classification number: F16D1/10 ,  G03G15/751

Abstract: A photosensitive drum for a printer cartridge, which can be easily mounted on a printer cartridge of which the positions of drum connectors are fixed, is disclosed. The photosensitive drum for a printer cartridge comprises a cylindrical drum having a photosensitive layer on a cylindrical surface thereof; and a pair of rotation shafts which is respectively mounted on the sides of the cylindrical drum for rotating and supporting the cylindrical drum, wherein at least one of the rotation shafts is insert-fitted to the side of the cylindrical drum.

Abstract translation: 公开了一种用于打印机墨盒的感光鼓，其可以容易地安装在其中鼓式连接器的位置被固定的打印机墨盒上。 用于打印机墨盒的感光鼓包括在其圆柱形表面上具有感光层的圆柱形滚筒; 以及一对旋转轴，其分别安装在圆筒形滚筒的侧面上，用于旋转和支撑圆柱形滚筒，其中至少一个旋转轴嵌入到圆筒形滚筒的侧面。

公开(公告)号：US06429479B1

公开(公告)日：2002-08-06

申请号：US09522247

申请日：2000-03-09

Applicant: K. Michael Han ,  Hao Fang ,  Masaaki Higashitani

Inventor： K. Michael Han ,  Hao Fang ,  Masaaki Higashitani

IPC: H01L29788

CPC classification number: H01L27/11521 ,  H01L27/115 ,  H01L27/11524

Abstract: A single tunnel gate oxidation process for fabricating NAND memory strings where the gate oxide of the select transistors and the floating gate memory transistors are fabricated in a single oxidation step is disclosed. The select gate transistors and the floating gate memory transistors have an oxide thickness of 85 Å-105 Å. For single tunnel gate approach, a careful selection of the medium doped source/drain region implant conditions is necessary for proper function of the NAND memory string. In one embodiment, the medium doped source/drain region is doped with Arsenic to a concentrations of 1013-1014/cm2.

Abstract translation: 公开了用于制造NAND存储器串的单通道栅极氧化工艺，其中选择晶体管的栅极氧化物和浮动栅极存储晶体管是在一个氧化步骤中制造的。 选择栅极晶体管和浮动栅极存储晶体管的氧化物厚度为85埃-105。 对于单通道栅极方法，对NAND存储器串的正常功能需要仔细选择中等掺杂源极/漏极区域注入条件。 在一个实施例中，中等掺杂源极/漏极区掺杂有浓度为1013-1014 / cm2的砷。

公开(公告)号：US06344994B1

公开(公告)日：2002-02-05

申请号：US09795849

申请日：2001-02-28

Applicant: Darlene G. Hamilton ,  Yider Wu ,  Michael Han

Inventor： Darlene G. Hamilton ,  Yider Wu ,  Michael Han

IPC: G11C1604

CPC classification number: G11C16/3409 ,  G11C5/063 ,  G11C11/5671 ,  G11C16/0475 ,  G11C16/10 ,  G11C16/3404 ,  G11C16/3436 ,  G11C16/3445 ,  G11C16/3454

Abstract: Dummy wordlines are provided between gaps of blocks of memory cells to compensate for higher charge loss at higher stress temperatures exhibited at edge wordlines of blocks of memory cells having large gaps. The dummy wordlines minimize the gap between the blocks. The dummy wordlines can be positioned between the blocks. Alternatively, the wordline width for the last block or sector wordline can be changed or different nitride used with less conductance in high temperatures. The dummy wordlines are typically ignored in normal operations on the memory.

Abstract translation: 在存储单元块的间隙之间提供虚拟字线以补偿在具有大间隙的存储器单元的块的边缘字线处表现的较高应力温度下的较高电荷损失。 虚拟字线最小化块之间的差距。 虚拟字线可以位于块之间。 或者，可以改变最后一个块或扇区字线的字线宽度，或者在高温下以较小的电导率使用不同的氮化物。 通常在内存的正常操作中忽略伪字线。

公开(公告)号：US07860866B2

公开(公告)日：2010-12-28

申请号：US12056027

申请日：2008-03-26

Applicant: Michael Han-Young Kim ,  Andrew S. Ivory ,  Ignatius Setiadi

Inventor： Michael Han-Young Kim ,  Andrew S. Ivory ,  Ignatius Setiadi

IPC: G06F17/30

CPC classification number: G06F17/30044 ,  G06F17/30041

Abstract: Even clusters are created based n a first metadata and second metadata of the electronic document. The event clusters are associated with an event id and each electronic document is associated with the event identifier of it corresponding event cluster. A user may then browse or otherwise access the electronic documents based on the event identifier.

Abstract translation: 偶数簇是基于电子文档的第一元数据和第二元数据创建的。 事件集群与事件ID相关联，并且每个电子文档与其对应事件集群的事件标识相关联。 然后，用户可以基于事件标识符浏览或以其他方式访问电子文档。

公开(公告)号：US20090248688A1

公开(公告)日：2009-10-01

申请号：US12056027

申请日：2008-03-26

Applicant: Michael Han-Young Kim ,  Andrew S. Ivory ,  Ignatius Setiadi

Inventor： Michael Han-Young Kim ,  Andrew S. Ivory ,  Ignatius Setiadi

IPC: G06F7/08

CPC classification number: G06F17/30044 ,  G06F17/30041

Abstract: Even clusters are created based n a first metadata and second metadata of the electronic document. The event clusters are associated with an event id and each electronic document is associated with the event identifier of it corresponding event cluster. A user may then browse or otherwise access the electronic documents based on the event identifier.

Abstract translation: 偶数簇是基于电子文档的第一元数据和第二元数据创建的。 事件集群与事件ID相关联，并且每个电子文档与其对应事件集群的事件标识相关联。 然后，用户可以基于事件标识符浏览或以其他方式访问电子文档。

公开(公告)号：US06933554B1

公开(公告)日：2005-08-23

申请号：US09904042

申请日：2001-07-11

Applicant: K. Michael Han

Inventor： K. Michael Han

IPC: H01L21/28 ,  H01L29/423 ,  H01L29/51 ,  H01L29/72 ,  H01L29/788

CPC classification number: H01L21/28194 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/51 ,  H01L29/7883

Abstract: An improved NAND-type memory cell structure having improved reliability and endurance. Since a high risk area for oxide breakdown and/or current leakage exists in the tunnel oxide layer, source/drain overlap region, the present invention provides a NAND-type memory cell fabricated using controlled formation of the tunnel oxide layer.

Abstract translation: 改进的NAND型存储单元结构具有改进的可靠性和耐久性。 由于在隧道氧化物层，源极/漏极重叠区域中存在用于氧化物击穿和/或电流泄漏的高风险区域，本发明提供了使用隧道氧化物层的受控形成制造的NAND型存储单元。

公开(公告)号：US06246610B1

公开(公告)日：2001-06-12

申请号：US09511652

申请日：2000-02-22

Applicant: K. Michael Han ,  Joseph G. Pawletko ,  Narbeh Derhacobian ,  Chi Chang

Inventor： K. Michael Han ,  Joseph G. Pawletko ,  Narbeh Derhacobian ,  Chi Chang

IPC: G11C1604

CPC classification number: G11C16/14 ,  G11C16/10 ,  G11C16/30

Abstract: A programming and erase method that extends erase time degradation of nonvolatile memory devices by using a constant erase voltage and a set of program voltages, where the average program voltage of the set of the program voltages is approximately equal to the constant erase voltage.

Abstract translation: 一种编程和擦除方法，其通过使用恒定擦除电压和一组编程电压来延长非易失性存储器件的擦除时间劣化，其中编程电压组的平均编程电压近似等于恒定擦除电压。