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    METHOD AND SYSTEM FOR MONITORING DEPOSITION PROCESS
    14.
    发明申请
    METHOD AND SYSTEM FOR MONITORING DEPOSITION PROCESS 有权

    公开(公告)号：US20220155064A1

    公开(公告)日：2022-05-19

    申请号：US17438845

    申请日：2020-03-12

    Applicant: NOVA MEASURING INSTRUMENTS, INC.

    Inventor： Heath A. POIS ,  Laxmi WARAD ,  Srinivasan RANGARAJAN

    IPC: G01B15/02 ,  G01N23/2273

    Abstract: Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.

    Feed-forward of multi-layer and multi-process information using XPS and XRF technologies
    16.
    发明授权
    Feed-forward of multi-layer and multi-process information using XPS and XRF technologies 有权

    公开(公告)号：US10648802B2

    公开(公告)日：2020-05-12

    申请号：US16536132

    申请日：2019-08-08

    Applicant: NOVA MEASURING INSTRUMENTS, INC.

    Inventor： Heath A. Pois ,  Wei Ti Lee ,  Lawrence V. Bot ,  Michael C. Kwan ,  Mark Klare ,  Charles Thomas Larson

    IPC: G01B15/02 ,  G01N23/2251 ,  G01N23/225 ,  G01N23/223 ,  G01N23/2273 ,  G01N23/22

    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

    MASS SPECTROMETER DETECTOR AND SYSTEM AND METHOD USING THE SAME
    17.
    发明申请
    MASS SPECTROMETER DETECTOR AND SYSTEM AND METHOD USING THE SAME 审中-公开

    公开(公告)号：US20200066502A1

    公开(公告)日：2020-02-27

    申请号：US16612697

    申请日：2017-05-12

    Applicant: NOVA MEASURING INSTRUMENTS, INC.

    Inventor： Christopher F. BEVIS ,  Yungman Alan LIU ,  David Allen REED ,  Eli CHEIFETZ ,  Amit WEINGARTEN ,  Alexander KADYSHEVITCH

    IPC: H01J49/02 ,  H01J49/06

    Abstract: An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.

    Method and system for non-destructive metrology of thin layers
    18.
    发明授权
    Method and system for non-destructive metrology of thin layers 有权

    公开(公告)号：US10533961B2

    公开(公告)日：2020-01-14

    申请号：US15773145

    申请日：2016-11-02

    Applicant: Nova Measuring Instruments, Inc.

    Inventor： Wei Ti Lee ,  Heath Pois ,  Mark Klare ,  Cornel Bozdog

    IPC: G01N23/227 ,  G01N23/223 ,  G01N23/22 ,  G01N23/2273 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208

    Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

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