公开(公告)号：US06621112B2

公开(公告)日：2003-09-16

申请号：US09731343

申请日：2000-12-06

申请人： Venkatachalam C. Jaiprakash ,  Mihel Seitz ,  Norbert Arnold

发明人： Venkatachalam C. Jaiprakash ,  Mihel Seitz ,  Norbert Arnold

IPC分类号： H01L27108

CPC分类号： H01L27/10867

摘要： A semiconductor Dynamic Random Access Memory (DRAM) cell is fabricated using a vertical access transistor and a storage capacitor formed in a vertical trench. A Shallow Trench Isolation (STI) region is used as a masking region to confine the channel region of the access transistor, the first and second output regions of the access transistor, and a strap region connecting the second output region to the storage capacitor, to a narrow portion of the trench. The so confined second output region of the access transistor has reduced leakage to similar second output regions of adjacent memory cells. Adjacent memory cells can then be placed closer to one another without an increase in leakage and cross-talk between adjacent memory cells.

摘要翻译： 使用垂直存取晶体管和形成在垂直沟槽中的存储电容器制造半导体动态随机存取存储器（DRAM）单元。 浅沟槽隔离（STI）区域用作屏蔽区域，以将存取晶体管的沟道区域，存取晶体管的第一和第二输出区域以及将第二输出区域连接到存储电容器的带区域限制到 沟槽的一小部分。 存取晶体管的如此限制的第二输出区域减少了泄漏到相邻存储器单元的类似的第二输出区域。 相邻的存储器单元然后可以彼此更靠近地放置，而不会增加相邻存储单元之间的泄漏和串扰。

公开(公告)号：US06200851B1

公开(公告)日：2001-03-13

申请号：US09272217

申请日：1999-03-18

申请人： Norbert Arnold

发明人： Norbert Arnold

IPC分类号： H01L218242

CPC分类号： H01L27/10841

摘要： A memory cell for a dynamic random access memory includes a pass transistor and a storage capacitor. The transistor is a vertical transistor formed along an upper portion of a sidewall of a polysilicon-filled trench in a monocrystalline silicon body with the source and drain in the body and the source contact, gate and gate contact in the trench, with its gate dielectric being an oxide layer on the sidewall portion of the trench. The capacitor is a vertical capacitor formed along a deeper portion of the trench and has as its-storage plate a lower polysilicon layer in the trench and as its reference plate a deep doped well in the body. The source contact and the storage plate are in electrical contact in the trench and the source contact and the gate contact are in the trench electrically isolated from one another.

摘要翻译： 用于动态随机存取存储器的存储单元包括传输晶体管和存储电容器。 晶体管是沿着单晶硅体中的多晶硅填充沟槽的侧壁的上部形成的垂直晶体管，其中主体中的源极和漏极以及沟槽中的源极接触，栅极和栅极接触，其栅极电介质 是在沟槽的侧壁部分上的氧化物层。 电容器是沿着沟槽的较深部分形成的垂直电容器，并且具有作为其存储板的沟槽中的下多晶硅层和其参考板在体内的深掺杂阱。 源触点和存储板在沟槽中电接触，并且源极触点和栅极触点彼此在电隔离的沟槽中。

公开(公告)号：US5749963A

公开(公告)日：1998-05-12

申请号：US799272

申请日：1997-02-13

申请人： Norbert Arnold ,  Willi Haug ,  Stefan Lind

发明人： Norbert Arnold ,  Willi Haug ,  Stefan Lind

IPC分类号： C04B28/00 ,  C04B40/06 ,  C04B103/65 ,  C04B111/20 ,  F16B13/14 ,  C04B24/00 ,  C04B24/04 ,  C04B24/24 ,  C04B24/40

CPC分类号： C04B40/0666 ,  C04B40/065

摘要： The hardenable mortar composition consists of a bonding agent component including a hydraulic bonding agent, such as cement, gypsum or mortar, and a paste-forming agent consisting of a liquid solvent inert with respect to the hydraulic bonding agent, and an aqueous component kept separate from the bonding agent component until the two components are mixed to form a hardened mortar composition. The aqueous component includes water and a hydrophobic adsorbent or absorbent. The hydrophobic adsorbent or absorbent is included in the aqueous component to avoid the emergence of the paste-forming agent, which is at the very least unsightly, when the aqueous component is mixed with the bonding agent component. The hydrophobic adsorbent or absorbent binds the paste-forming agent which would otherwise escape during mixing and remains as an inert additive in the setting mortar composition, without reducing the hardness thereof.

摘要翻译： 可硬化砂浆组合物由包括水泥粘合剂如水泥，石膏或砂浆的粘合剂组分和由相对于水硬性粘合剂为惰性的液体溶剂组成的糊剂形成剂组成，并且水性组分保持分开 从粘合剂组分直到两个组分混合以形成硬化砂浆组合物。 水性成分包括水和疏水吸附剂或吸收剂。 疏水吸附剂或吸收剂包含在水性组分中，以避免当水性组分与粘合剂组分混合时，膏状物形成剂的出现至少不好看。 疏水性吸附剂或吸收剂结合糊剂形成剂，否则在混合过程中会逸出，并且在固化砂浆组合物中作为惰性添加剂保留，而不降低其硬度。

公开(公告)号：US5666633A

公开(公告)日：1997-09-09

申请号：US519665

申请日：1995-08-25

申请人： Norbert Arnold ,  Bernd Hein ,  Guenter Seibold ,  Manfred Haage ,  Bernd Plocher

发明人： Norbert Arnold ,  Bernd Hein ,  Guenter Seibold ,  Manfred Haage ,  Bernd Plocher

IPC分类号： B22F3/02 ,  B22F3/22 ,  B22F5/00 ,  B22F5/06 ,  B22F5/10 ,  B22F7/08 ,  C22C33/02 ,  F16B1/00 ,  F16B13/06 ,  F16B13/12 ,  B22F1/00

CPC分类号： B22F3/225 ,  B22F5/10 ,  C22C33/0221 ,  C22C33/0228 ,  F16B13/065 ,  B22F2005/103 ,  B22F2998/00 ,  F16B2001/0007

摘要： Interlocking metal parts that slide under pressure on one another are manufactured so that at least one metal part is manufactured by a powdered metal injection-molding method, an in order to improve the sliding behavior and to minimize the binding tendency, a non-metallic substance having a structured arrangement of molecules is admixed in powdered or granular form with the powdered metal of the metal part manufactured by powder injection molding. The substance is inert towards the metal and has a thermal stability of at least 900.degree. C. In particular, ceramic solid materials or fillers are suitable substances.

摘要翻译： 制造在压力下彼此滑动的联锁金属部件，使得至少一个金属部件通过粉末金属注射成型方法制造，为了提高滑动性能并使结合倾向最小化，非金属物质 具有结构化分子排列的粉末或颗粒形式与通过粉末注射成型制造的金属部件的粉末金属混合。 该物质对金属是惰性的，具有至少900℃的热稳定性。特别地，陶瓷固体材料或填料是合适的物质。

公开(公告)号：US07015092B2

公开(公告)日：2006-03-21

申请号：US10740026

申请日：2003-12-18

申请人： Venkatachalam C. Jaiprakash ,  Norbert Arnold

发明人： Venkatachalam C. Jaiprakash ,  Norbert Arnold

IPC分类号： H01L21/8242

CPC分类号： H01L29/66666 ,  H01L27/10864 ,  H01L27/10876 ,  H01L27/10891

摘要： Methods and devices that provide improved isolation and alignment of gate conductors or gate contacts of vertical transistors in deep trench memory cells. A method for forming a vertical gate contact of a vertical transistor includes an oxide spacer formation process that prevents defects, such as shorts caused by voids filled with polysilicon, resulting from etching processes that are performed during fabrication of a vertical transistor, and enables formation of well-defined contact plugs for gate contacts, providing improved alignment structures.

摘要翻译： 提供深沟槽存储单元中垂直晶体管的栅极导体或栅极触点的改进的隔离和对准的方法和装置。 用于形成垂直晶体管的垂直栅极接触的方法包括氧化物间隔物形成工艺，其防止由垂直晶体管制造期间进行的蚀刻工艺导致的缺陷，例如由填充有多晶硅的空隙引起的短路，并且能够形成 用于门触点的良好定义的接触插头，提供改进的对准结构。

公开(公告)号：US20050136631A1

公开(公告)日：2005-06-23

申请号：US10740026

申请日：2003-12-18

申请人： Venkatachalam Jaiprakash ,  Norbert Arnold

发明人： Venkatachalam Jaiprakash ,  Norbert Arnold

IPC分类号： H01L21/336 ,  H01L21/8242 ,  H01L21/3205 ,  H01L21/4763 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/66666 ,  H01L27/10864 ,  H01L27/10876 ,  H01L27/10891

摘要： Methods and devices that provide improved isolation and alignment of gate conductors or gate contacts of vertical transistors in deep trench memory cells. A method for forming a vertical gate contact of a vertical transistor includes an oxide spacer formation process that prevents defects, such as shorts caused by voids filled with polysilicon, resulting from etching processes that are performed during fabrication of a vertical transistor, and enables formation of well-defined contact plugs for gate contacts, providing improved alignment structures.

摘要翻译： 提供深沟槽存储单元中垂直晶体管的栅极导体或栅极触点的改进的隔离和对准的方法和装置。 用于形成垂直晶体管的垂直栅极接触的方法包括氧化物间隔物形成工艺，其防止由垂直晶体管制造期间进行的蚀刻工艺导致的缺陷，例如由填充有多晶硅的空隙引起的短路，并且能够形成 用于门触点的良好定义的接触插头，提供改进的对准结构。

公开(公告)号：US06200873B1

公开(公告)日：2001-03-13

申请号：US09395226

申请日：1999-09-13

申请人： Martin Schrems ,  Norbert Arnold

发明人： Martin Schrems ,  Norbert Arnold

IPC分类号： H01L218242

CPC分类号： H01L27/10861 ,  H01L27/10867

摘要： The present invention provides a method for fabricating a trench capacitor, in particular for use in a semiconductor memory cell (100), with an insulation collar (168′; 168″), having the following steps: provision of a substrate (101); formation of a trench (108) in the substrate (101); provision of a first layer (177) on the trench wall; provision of a second layer (178) on the first layer (177) on the trench wall; filling of the trench (108) with a first filling material (152); removal of the first filling material (152) from the upper region of the trench (108) in order to define a collar region; removal of the second layer (178) from the upper region of the trench (108); removal of the first filling material (152) from the lower region of the trench (108); removal of the first layer (177) from the upper region of the trench (108); local oxidation of the upper region of the trench (108) in order to produce the insulation collar (168′; 168″); removal of the first and second layers (177; 178) from the lower region of the trench; formation of a dielectric layer (164) in the lower region of the trench (108) and on the inner side of the insulation collar (168′; 168″); and filling of the trench (108) with a conductive second filling material (161).

摘要翻译： 本发明提供一种用于制造沟槽电容器的方法，特别是用于具有绝缘套环（168'; 168“）的半导体存储单元（100）中，其具有以下步骤：提供衬底（101） ; 在衬底（101）中形成沟槽（108）; 在沟槽壁上设置第一层（177）; 在沟槽壁上的第一层（177）上设置第二层（178）; 用第一填充材料（152）填充沟槽（108）; 从沟槽（108）的上部区域移除第一填充材料（152）以便限定一个环形区域; 从沟槽（108）的上部区域去除第二层（178）; 从沟槽（108）的下部区域移除第一填充材料（152）; 从沟槽（108）的上部区域去除第一层（177）; 沟槽（108）的上部区域的局部氧化以产生绝缘套环（168'; 168“）; 从沟槽的下部区域去除第一和第二层（177; 178）; 在沟槽（108）的下部区域和绝缘套环（168'; 168“）的内侧上形成电介质层（164）。 以及用导电的第二填充材料（161）填充所述沟槽（108）。

公开(公告)号：US6150210A

公开(公告)日：2000-11-21

申请号：US272218

申请日：1999-03-18

申请人： Norbert Arnold

发明人： Norbert Arnold

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/088 ,  H01L27/108

CPC分类号： H01L27/10841

摘要： A memory cell for a dynamic random access memory includes a pass transistor and a storage capacitor. The transistor is a vertical transistor formed along an upper portion of a sidewall of a polysilicon-filled trench in a monocrystalline silicon body with the source and drain in the body and the source contact, gate and gate contact in the trench, with its gate dielectric being an oxide layer on the sidewall portion of the trench. The capacitor is a vertical capacitor formed along a deeper portion of the trench and has as its storage plate a lower polysilicon layer in the trench and as its reference plate a deep doped well in the body. The source contact and the storage plate are in electrical contact in the trench and the source contact and the gate contact are in the trench electrically isolated from one another.

摘要翻译： 用于动态随机存取存储器的存储单元包括传输晶体管和存储电容器。 晶体管是沿着单晶硅体中的多晶硅填充沟槽的侧壁的上部形成的垂直晶体管，其中主体中的源极和漏极以及沟槽中的源极接触，栅极和栅极接触，其栅极电介质 是在沟槽的侧壁部分上的氧化物层。 电容器是沿着沟槽的较深部分形成的垂直电容器，并且具有作为其存储板的沟槽中的下多晶硅层和作为其参考板的主体中的深掺杂阱。 源触点和存储板在沟槽中电接触，并且源极触点和栅极触点彼此在电隔离的沟槽中。

公开(公告)号：US5637158A

公开(公告)日：1997-06-10

申请号：US565072

申请日：1995-11-30

申请人： Norbert Arnold ,  Bernd Hein ,  Paul Gumpel

发明人： Norbert Arnold ,  Bernd Hein ,  Paul Gumpel

IPC分类号： E21D20/00 ,  B22F3/10 ,  B22F5/00 ,  C21D6/00 ,  C22C33/02 ,  C22C38/38 ,  C23C24/08 ,  E21D21/00 ,  C23C8/06

CPC分类号： E21D21/0006 ,  B22F5/00

摘要： A method of manufacturing an expansible anchor comprises the steps of forming one part as a partially slotted expansible sleeve composed of corrosion-resistant steel and anchorable in a building component, forming another part as an expander body composed of corrosion-resistant steel and arranged to be driven into the expansible sleeve so as to anchor the expansible sleeve in the building component, enriching one of the parts with interstitially dissolved, non-metallic alloying constituents selected from the group consisting of carbon, nitrogen and boron, and ageing by heat treating so as to precipitate the alloying constituents in the form selected from the group consisting of carbides, nitrides and borides, respectively, to achieve increased hardness.

摘要翻译： 制造可膨胀锚的方法包括以下步骤：将一部分形成为由耐腐蚀钢组成的可部分开槽的可膨胀套管，并可锚固在建筑部件中，形成作为由耐腐蚀钢构成的膨胀机构的另一部分， 驱动到可膨胀套管中，以将可膨胀套管锚定在建筑构件中，使选自碳，氮和硼的间隙溶解的非金属合金成分富集一部分，并通过热处理老化，以便 以分别从由碳化物，氮化物和硼化物组成的组中选择的形式析出合金成分，以获得增加的硬度。

公开(公告)号：US5575846A

公开(公告)日：1996-11-19

申请号：US528955

申请日：1995-09-15

申请人： Norbert Arnold ,  Willi Haug

发明人： Norbert Arnold ,  Willi Haug

IPC分类号： C04B24/00 ,  C04B40/06 ,  E21D20/00 ,  F16B13/14

CPC分类号： C04B40/0666 ,  C04B40/06 ,  F16B13/145

摘要： The mortar composition for fixing an anchoring element in a drilled hole in a substrate consists of a water component and a mineral mortar paste held separately from the water component in a crushable container. The mineral mortar paste includes a mixture of mineral mortar and a liquid solvent chemically inert towards the mineral mortar and the mineral mortar paste is hardenable with the water component to form a hardened mortar compound. The water component consists of water and a thixotropic agent so that the water component acts like a paste when not subject to shear forces but flows when subject to shear forces such as those created by the anchoring element advancing in the drilled hole. The thixotropic agent is advantageously amorphous pyrogenic silicic acid.

摘要翻译： 用于将锚固元件固定在基材的钻孔中的砂浆组合物由在可压碎容器中与水组分分开地保持的水成分和矿物砂浆粘合剂组成。 无机砂浆包括无机砂浆和对矿物砂浆呈化学惰性的液体溶剂的混合物，矿物砂浆可用水组分硬化，形成硬化砂浆化合物。 水组分由水和触变剂组成，使得当不受剪切力影响时，水分子的作用就像糊状物，但是当受到锚固元件在钻孔中前进的剪切力的影响时流动。 触变剂有利地是无定形热解硅酸。