公开(公告)号：US08969196B2

公开(公告)日：2015-03-03

申请号：US13616910

申请日：2012-09-14

Applicant: Jin-Ho Park ,  Gil-Heyun Choi ,  Byung-Lyul Park ,  Jong-Myeong Lee ,  Zung-Sun Choi ,  Hye-Kyung Jung

Inventor： Jin-Ho Park ,  Gil-Heyun Choi ,  Byung-Lyul Park ,  Jong-Myeong Lee ,  Zung-Sun Choi ,  Hye-Kyung Jung

IPC: H01L21/768 ,  H01L21/4763 ,  H01L21/285 ,  H01L23/532 ,  H01L27/115 ,  H01L27/108

CPC classification number: H01L21/76846 ,  H01L21/28562 ,  H01L21/76856 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L27/10855 ,  H01L27/11521 ,  H01L27/11524 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device can include an insulation layer on that is on a substrate on which a plurality of lower conductive structures are formed, where the insulation layer has an opening. A barrier layer is on a sidewall and a bottom of the opening of the insulation layer, where the barrier layer includes a first barrier layer in which a constituent of a first deoxidizing material is richer than a metal material in the first barrier layer and a second barrier layer in which a metal material in the second barrier layer is richer than a constituent of a second deoxidizing material. An interconnection is in the opening of which the sidewall and the bottom are covered with the barrier layer, the interconnection is electrically connected to the lower conductive structure.

Abstract translation: 半导体器件可以包括在其上形成有多个下导电结构的基板上的绝缘层，其中绝缘层具有开口。 阻挡层位于绝缘层的开口的侧壁和底部上，其中阻挡层包括第一阻挡层，第一脱氧材料的成分比第一阻挡层中的金属材料更富，第二阻隔层 阻挡层，其中第二阻挡层中的金属材料比第二脱氧材料的成分更富。 互连在其开口中，侧壁和底部被阻挡层覆盖，互连电连接到下导电结构。

公开(公告)号：US08936715B2

公开(公告)日：2015-01-20

申请号：US13695070

申请日：2010-11-08

Applicant: Kyung Seok Noh ,  Yong Woon Kim ,  Gyung Rok Kim ,  Jae Wook Ryu ,  Sun Hyuk Bae ,  Tae Young Jang ,  Sun Choi ,  Seung Hoon Oh

Inventor： Kyung Seok Noh ,  Yong Woon Kim ,  Gyung Rok Kim ,  Jae Wook Ryu ,  Sun Hyuk Bae ,  Tae Young Jang ,  Sun Choi ,  Seung Hoon Oh

IPC: C10G69/02 ,  C10M101/02 ,  C10G45/58 ,  C10G65/12

CPC classification number: C10M101/02 ,  C10G45/58 ,  C10G65/12 ,  C10G2300/1037 ,  C10G2300/202 ,  C10G2300/302 ,  C10G2300/4081 ,  C10G2300/42 ,  C10G2300/70 ,  C10G2400/10 ,  C10M2203/1006 ,  C10M2203/1025 ,  C10N2230/02 ,  C10N2270/00 ,  C10N2220/022

Abstract: Disclosed is a method of manufacturing high quality lube base oil (Group III) from unconverted oil having various properties obtained in a variety of hydrocrackers using improved catalytic dewaxing and hydrofinishing, the method including producing unconverted oil of at least one kind in the same or different hydrocrackers; subjecting the unconverted oil to vacuum distillation; supplying all or part of the distillate fractions to a catalytic dewaxing reactor; supplying the dewaxed oil fraction to a hydrofinishing reactor; and stripping the hydrofinished light oil fraction, wherein make-up hydrogen is supplied upstream of the hydrofinishing reactor to increase hydrogen partial pressure, thereby enabling high quality base oil to be manufactured at high yield under optimal process conditions using unconverted oil produced by hydrocracking under various conditions.

Abstract translation: 公开了一种使用改进的催化脱蜡和加氢精制技术在各种加氢裂化器中获得的具有各种性能的未转化油的高质量润滑油基础油（组III）的方法，该方法包括生产至少一种相同或不同的未转化油 加氢裂化器 对未转化的油进行真空蒸馏; 将全部或部分馏出物馏分供应到催化脱蜡反应器中; 将脱蜡油馏分供给加氢精制反应器; 并且对加氢精制轻馏分进行汽提，其中在加氢精制反应器的上游供应氢气以提高氢分压，由此可以在最佳工艺条件下以高产率制造高质量的基础油，使用在各种各样的加氢裂化产生的未转化油 条件。

公开(公告)号：US08934311B2

公开(公告)日：2015-01-13

申请号：US13604308

申请日：2012-09-05

Applicant: Hak-soo Yu ,  Uk-song Kang ,  Chul-woo Park ,  Joo-sun Choi ,  Hong-Sun Hwang

Inventor： Hak-soo Yu ,  Uk-song Kang ,  Chul-woo Park ,  Joo-sun Choi ,  Hong-Sun Hwang

IPC: G11C29/44 ,  G11C29/50 ,  G11C29/00 ,  G11C29/04 ,  G11C11/41

CPC classification number: G11C29/50 ,  G11C11/41 ,  G11C29/783 ,  G11C2029/0409 ,  G11C2029/4402

Abstract: A semiconductor device includes a first memory region including a plurality of memory cells; a test unit configured to test the first memory region, and detect a weak bit from among the plurality of memory cells; and a second memory region configured to store a weak bit address (WBA) of the first memory region, and data intended to be stored in the weak bit, wherein the first memory region and the second memory region include different types of memory cells.

Abstract translation: 半导体器件包括包括多个存储单元的第一存储区域; 测试单元，被配置为测试所述第一存储器区域，并且从所述多个存储器单元中检测弱位; 以及第二存储器区域，被配置为存储所述第一存储器区域的弱位地址（WBA）以及要存储在所述弱位中的数据，其中所述第一存储器区域和所述第二存储器区域包括不同类型的存储器单元。

公开(公告)号：US08885380B2

公开(公告)日：2014-11-11

申请号：US13209026

申请日：2011-08-12

Applicant: Uk-song Kang ,  Young-hyun Jun ,  Joo-sun Choi

Inventor： Uk-song Kang ,  Young-hyun Jun ,  Joo-sun Choi

IPC: G11C5/02 ,  H01L25/18 ,  G11C7/10

CPC classification number: H01L25/18 ,  G11C5/02 ,  G11C7/10 ,  H01L2224/48091 ,  H01L2225/06544 ,  H01L2924/00014

Abstract: A semiconductor package is disclosed. The semiconductor package includes a package interface, a stack of semiconductor chips, a plurality of stacks of through substrate vias, and an interface circuit. The package interface includes at least a first pair of terminals. Each stack of through substrate vias includes plural through substrate vias of respective ones of the semiconductor chips, each through substrate via electrically connected to a through substrate via of an immediately adjacent semiconductor chip. The interface circuit includes an input connected to the first pair of terminals to receive a differential signal providing first information, and includes an output to provide an output signal including the first information in a single-ended signal format to at least one of the plurality of stacks of through substrate vias.

Abstract translation: 公开了半导体封装。 半导体封装包括封装接口，半导体芯片堆叠，多个通过衬底通孔的堆叠以及接口电路。 封装接口包括至少第一对端子。 每个通过衬底通孔的堆叠包括相应的半导体芯片的多个通过衬底通孔，每个穿过衬底经由电连接到直接相邻的半导体芯片的贯穿衬底通孔。 接口电路包括连接到第一对终端的输入端，以接收提供第一信息的差分信号，并且包括输出，以将包括单端信号格式的第一信息的输出信号提供给多个 通过衬底通孔的堆叠。

公开(公告)号：US08873324B2

公开(公告)日：2014-10-28

申请号：US13240049

申请日：2011-09-22

Applicant: Chul-Woo Park ,  Joo-Sun Choi ,  Hong-Sun Hwang

Inventor： Chul-Woo Park ,  Joo-Sun Choi ,  Hong-Sun Hwang

IPC: G11C7/00

CPC classification number: G11C11/40618 ,  G11C11/40622 ,  G11C11/408

Abstract: A refresh address is generated with a refresh period for refreshing a memory device with refresh leveraging. A respective refresh is performed on a weak cell having a first address when the refresh address is a second address instead of on a first strong cell having the second address. A respective refresh is performed on one of the first strong cell or a second strong cell having a third address when the refresh address is the third address. Address information is stored for only one of the first, second, and third addresses such that memory capacity may be reduced. In alternative aspects, a respective refresh is performed on one of a weak cell, a first strong cell, or a second strong cell depending on a flag when the refresh address is any of at least one predetermined address to result in refresh leveraging.

Abstract translation: 生成具有刷新周期的刷新地址，以刷新刷新的存储器件。 当刷新地址是第二地址而不是具有第二地址的第一强单元时，对具有第一地址的弱小区执行相应的刷新。 当刷新地址是第三地址时，在具有第三地址的第一强单元或第二强单元之一上执行相应的刷新。 仅对第一，第二和第三地址中的一个存储地址信息，从而可以减少存储容量。 在替代方面，当刷新地址是至少一个预定地址中的任一个以导致刷新利用时，依赖于标志，在弱小区，第一强小区或第二强小区中的一个上执行相应的刷新。

公开(公告)号：US08865252B2

公开(公告)日：2014-10-21

申请号：US13031756

申请日：2011-02-22

Applicant: Yong Sup Choi ,  Myeng-Woo Nam ,  Jong-Won Hong ,  Seok-Rak Chang ,  Eun-Sun Choi

Inventor： Yong Sup Choi ,  Myeng-Woo Nam ,  Jong-Won Hong ,  Seok-Rak Chang ,  Eun-Sun Choi

IPC: C23C16/00 ,  B05D5/06 ,  H01L21/677 ,  H01L51/56 ,  H01L21/67 ,  H01L21/673 ,  H01L21/687

CPC classification number: H01L21/6776 ,  H01L21/67173 ,  H01L21/6732 ,  H01L21/68764 ,  H01L51/56

Abstract: A thin film deposition apparatus that can be easily used to manufacture large-sized display devices on a mass scale and that improves manufacturing yield, and a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus. The thin film deposition apparatus includes: a loading unit to place a substrate, which is a deposition target, on an electrostatic chuck; a deposition unit including a chamber, and a thin film deposition assembly that is disposed in the chamber and forms a thin film on the substrate placed on the electrostatic chuck; an unloading unit to separate the substrate on which deposition is completed from the electrostatic chuck; a first conveyor unit to sequentially move the electrostatic chuck having the substrate thereon to the loading unit, to the deposition unit, and finally, to the unloading unit, wherein the first conveyor unit includes: one pair of first guide rails and one pair of second guide rails disposed in parallel; at least one first guide block engaged with the first guide rails, respectively; and at least one second guide block engaged with the second guide rails, respectively.

Abstract translation: 可以容易地用于大规模制造大尺寸显示装置并提高制造成品率的薄膜沉积装置，以及通过使用薄膜沉积装置制造有机发光显示装置的方法。 薄膜沉积装置包括：装载单元，将作为沉积靶的基板放置在静电卡盘上; 包括室的沉积单元和设置在室中并在放置在静电卡盘上的基板上形成薄膜的薄膜沉积组件; 卸载单元，用于将其上完成了沉积的基板从静电卡盘分离; 第一传送单元，其顺序地将其上具有基板的静电卡盘移动到装载单元，到沉积单元，最后到达卸载单元，其中第一传送单元包括：一对第一导轨和一对第二传送单元 平行布置的导轨; 分别与所述第一导轨接合的至少一个第一引导块; 以及分别与第二导轨接合的至少一个第二引导块。

公开(公告)号：US08859531B2

公开(公告)日：2014-10-14

申请号：US13990373

申请日：2011-11-18

Applicant: Sang-Yong Lee ,  Geun-Hyeog Lee ,  Byong-Sun Choi ,  Jong-Hyeon Ryu ,  Jin-Ha Park ,  Mi-Jin O

Inventor： Sang-Yong Lee ,  Geun-Hyeog Lee ,  Byong-Sun Choi ,  Jong-Hyeon Ryu ,  Jin-Ha Park ,  Mi-Jin O

IPC: A01N45/00 ,  A61K31/56 ,  A61K31/58 ,  A61K31/573 ,  A61K31/55

CPC classification number: A61K31/58 ,  A61K9/0043 ,  A61K31/55 ,  A61K31/573 ,  A61K2300/00

Abstract: The present invention provides a pharmaceutical composition for nasal administration comprising mometasone furoate and azelastine hydrochloride, wherein the pharmaceutical composition comprises thaumatin as an agent for reducing bitterness and irritation.

Abstract translation: 本发明提供了一种用于鼻内给药的药物组合物，其包含糠酸莫米他松和盐酸氮卓斯汀，其中所述药物组合物包含作为降低苦味和刺激的药物的甜蛋白。

公开(公告)号：US08852687B2

公开(公告)日：2014-10-07

申请号：US13198591

申请日：2011-08-04

Applicant: Uno Chang ,  Jae-Kwang Ryu ,  Eun-Sun Choi ,  Byung-Su Kim

Inventor： Uno Chang ,  Jae-Kwang Ryu ,  Eun-Sun Choi ,  Byung-Su Kim

IPC: B05D3/00 ,  C23C16/52 ,  C23C16/44 ,  C23C14/24 ,  C23C14/12 ,  C23C14/04 ,  C23C14/56 ,  H01L51/56

CPC classification number: C23C14/12 ,  C23C14/042 ,  C23C14/243 ,  C23C14/568 ,  H01L51/56

Abstract: An organic layer deposition apparatus for forming an organic layer while a substrate is being moved, in which an interval between the substrate and the organic layer deposition apparatus can be measured at a vacuum condition.

Abstract translation: 一种有机层沉积装置，用于在衬底移动期间形成有机层，其中可以在真空条件下测量衬底和有机层沉积装置之间的间隔。

公开(公告)号：US20140213431A1

公开(公告)日：2014-07-31

申请号：US14168602

申请日：2014-01-30

Applicant: DAE HYUN CHOO ,  HONG CHAN KIM ,  SUK JOON KIM ,  JI MIN KIM ,  TAE JIN KIM ,  SUN CHOI ,  SEUNG HOON OH ,  YONG SEUNG KIM ,  DEUK SOO PARK ,  YONG KI PARK ,  CHUL WEE LEE ,  HEE YOUNG KIM ,  WON CHOON CHOI ,  NA YOUNG KANG ,  BU SUB SONG

Inventor： DAE HYUN CHOO ,  HONG CHAN KIM ,  SUK JOON KIM ,  JI MIN KIM ,  TAE JIN KIM ,  SUN CHOI ,  SEUNG HOON OH ,  YONG SEUNG KIM ,  DEUK SOO PARK ,  YONG KI PARK ,  CHUL WEE LEE ,  HEE YOUNG KIM ,  WON CHOON CHOI ,  NA YOUNG KANG ,  BU SUB SONG

IPC: B01J29/48

CPC classification number: B01J29/48 ,  B01J29/076 ,  B01J37/0045 ,  B01J37/28 ,  B01J2229/186 ,  B01J2229/20 ,  B01J2229/42 ,  C10G11/05 ,  C10G2300/301 ,  C10G2400/20

Abstract: Disclosed are a molecular sieve catalyst and a preparation method thereof to produce light olefins from cracking naphtha catalytically in severe environments of high temperature and high moisture. In detail, the catalyst is prepared by spray-drying and calcining the mixed slurry, in which 0.01˜5.0 wt % of MnO2 and 1˜15 wt % of P2O5 are simultaneously imbedded in catalyst which consists of zeolite, clay and inorganic complex. According to the present invention, the method that manganese and phosphate are imbedded simultaneously in zeolite and inorganic complex is used to increases thermal-stability of obtained spherical catalyst, and increase olefin yield of cracking hydrocarbon such as naphtha by protecting acid-site of zeolite. To synthesize the required catalyst, the important procedures are mixing ratio and mixing sequence of Mn, P, zeolite, and inorganic complex.

Abstract translation: 公开了一种分子筛催化剂及其制备方法，用于在严酷的高温高湿环境下催化裂解石脑油。 详细地，通过喷雾干燥和煅烧混合浆料制备催化剂，其中0.01〜5.0重量％的MnO 2和1〜15重量％的P 2 O 5同时嵌入由沸石，粘土和无机络合物组成的催化剂中。 根据本发明，使用锰和磷酸盐同时嵌入沸石和无机络合物的方法来提高所得球形催化剂的热稳定性，并通过保护沸石的酸性位点来提高裂解烃如石脑油的烯烃产率。 为了合成所需的催化剂，重要的步骤是Mn，P，沸石和无机络合物的混合比和混合顺序。

公开(公告)号：US20140128418A1

公开(公告)日：2014-05-08

申请号：US14002094

申请日：2012-02-27

Applicant: Yun Soo Bae ,  Kee In Lee ,  Jee Hyun Lee ,  Soo Young Lee ,  Sun Choi

Inventor： Yun Soo Bae ,  Kee In Lee ,  Jee Hyun Lee ,  Soo Young Lee ,  Sun Choi

IPC: C07D403/04 ,  C07D401/04

CPC classification number: C07D403/04 ,  A61K31/454 ,  C07D239/42 ,  C07D401/04

Abstract: The present invention provides a pyrazole derivative compound and a pharmaceutically acceptable salt thereof. The compound of the invention is remarkably effective for preventing and treating osteoporosis.

Abstract translation: 本发明提供吡唑衍生物化合物及其药学上可接受的盐。 本发明化合物对于预防和治疗骨质疏松症是非常有效的。