公开(公告)号：US20110017289A1

公开(公告)日：2011-01-27

申请号：US12769756

申请日：2010-04-29

Applicant: Rae-Man PARK ,  Chull Won Ju ,  Dae-Hyung Cho ,  Yong-Duck Chung ,  Sung-Bum Bae ,  Won Seok Han ,  Kyu-Seok Lee ,  Je Ha Kim

Inventor： Rae-Man PARK ,  Chull Won Ju ,  Dae-Hyung Cho ,  Yong-Duck Chung ,  Sung-Bum Bae ,  Won Seok Han ,  Kyu-Seok Lee ,  Je Ha Kim

IPC: H01L31/032 ,  H01L31/18

CPC classification number: H01L31/0749 ,  H01L31/0236 ,  H01L31/0322 ,  H01L31/1828 ,  Y02E10/541 ,  Y02E10/543

Abstract: Provided are a CIGS solar cell and a method of fabricating the CIGS solar cell. In the method, a buffer layer exposing protrusions is formed. Then, a window electrode layer having an uneven surface conforming with the protrusions of the buffer layer is formed. Thus, an additional process for making the upper surface of a window electrode layer rough is unnecessary in order to decrease surface reflectance of incident sunlight and increase the solar cell efficiency, so that productivity can be improved.

Abstract translation: 提供CIGS太阳能电池和制造CIGS太阳能电池的方法。 在该方法中，形成暴露突起的缓冲层。 然后，形成具有与缓冲层的突起一致的不平坦表面的窗口电极层。 因此，为了降低入射的太阳光的表面反射率和提高太阳能电池的效率，不需要用于使窗口电极层的上表面粗糙化的附加工艺，从而可以提高生产率。

公开(公告)号：US20120248404A1

公开(公告)日：2012-10-04

申请号：US13406544

申请日：2012-02-28

Applicant: Jong Moo LEE ,  Han Youl RYU ,  Eun Soo NAM ,  Sung Bum BAE

Inventor： Jong Moo LEE ,  Han Youl RYU ,  Eun Soo NAM ,  Sung Bum BAE

IPC: H01L33/04 ,  H01L33/32

CPC classification number: H01L33/0075 ,  H01L33/325

Abstract: The present disclosure relates to a gallium-nitride light emitting diode and a manufacturing method thereof and the gallium-nitride light emitting diode includes an n-type nitride semiconductor layer formed on a substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type doped intermediate layer formed on the active layer; and a p-type nitride semiconductor layer formed on the intermediate layer.

Abstract translation: 本发明涉及氮化镓发光二极管及其制造方法，氮化镓发光二极管包括在基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层上的有源层; 形成在有源层上的p型掺杂中间层; 以及形成在中间层上的p型氮化物半导体层。

公开(公告)号：US20100319777A1

公开(公告)日：2010-12-23

申请号：US12604450

申请日：2009-10-23

Applicant: Sung-Bum BAE ,  Yong-Duck Chung ,  Won Seok Han ,  Dae-Hyung Cho ,  Je Ha Kim

Inventor： Sung-Bum BAE ,  Yong-Duck Chung ,  Won Seok Han ,  Dae-Hyung Cho ,  Je Ha Kim

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/072 ,  Y02E10/52 ,  Y02E10/541 ,  Y02P70/521

Abstract: A solar cell and method of fabricating the same are provided. The solar cell includes a metal electrode layer, an optical absorption layer, a buffer layer, and a transparent electrode layer. The metal electrode layer is disposed on a substrate. The optical absorption layer is disposed on the metal electrode layer. The buffer layer is disposed on the optical absorption layer and includes an indium gallium nitride (InxGa1-xN). The transparent electrode layer is disposed on the buffer layer.

Abstract translation: 提供了一种太阳能电池及其制造方法。 太阳能电池包括金属电极层，光吸收层，缓冲层和透明电极层。 金属电极层设置在基板上。 光吸收层设置在金属电极层上。 缓冲层设置在光吸收层上并包括氮化铟镓（In x Ga 1-x N）。 透明电极层设置在缓冲层上。

公开(公告)号：US09041012B2

公开(公告)日：2015-05-26

申请号：US13473561

申请日：2012-05-16

Applicant: Sung Bum Bae

Inventor： Sung Bum Bae

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/42

CPC classification number: H01L33/387 ,  H01L33/42

Abstract: A microarray-type nitride light emitting device includes a light emitting semiconductor layer; and a multilayered transparent contact layer to divide a plane of the light emitting semiconductor layer into a plurality of microarray-type light emitting regions and a plurality of connect-divided light emitting regions. The multilayered transparent contact layer includes a first transparent contact layer that is composed of a material having a resistance value which is heat determinable, and that divides the plane of the light emitting semiconductor layer into the plurality of microarray-type light emitting regions; a transparent resistor layer that is defined within the first transparent contact layer, that is composed of the material having a resistance value which is heat determinable and has a resistance that is higher than that of the first transparent contact layer; and a second transparent contact layer to connect the plurality of microarray-type light emitting regions.

Abstract translation: 微阵列型氮化物发光器件包括发光半导体层; 以及将发光半导体层的平面分割为多个微阵列型发光区域和多个连接分割发光区域的多层透明接触层。 多层透明接触层包括第一透明接触层，其由具有热可确定性的电阻值的材料构成，并且将发光半导体层的平面划分成多个微阵列型发光区域; 限定在第一透明接触层内的透明电阻层，其由具有热可确定性并具有比第一透明接触层的电阻高的电阻值的材料构成; 以及第二透明接触层，以连接所述多个微阵列型发光区域。

公开(公告)号：US20100187494A1

公开(公告)日：2010-07-29

申请号：US12446513

申请日：2007-10-02

Applicant: Kyu Seok Lee ,  Sung Bum Bae

Inventor： Kyu Seok Lee ,  Sung Bum Bae

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L33/18 ,  H01L33/32

Abstract: A nitride semiconductor-based light emitting device is provided. The nitride semiconductor-based light emitting device is formed of a nitride semiconductor having a wurtzite lattice structure with the Ga face. The device has a substrate, a buffer layer, a first p-type contact layer, a second p-type contact layer, a first hole diffusion layer, a second hole diffusion layer, a light emitting active region, a second electron diffusion layer, a first electron a first n-type contact layer, which are sequentially stacked. Such a structure may effectively employ quasi-two-dimensional free electron and free hole gases formed at heterojunction interfaces due to the spontaneous polarization and the piezoelectric polarization in the wurtzite lattice structure with the Ga face, and thus enhances the emission uniformity and emission efficiency of the light emitting device.

Abstract translation: 提供了一种基于氮化物半导体的发光器件。 基于氮化物半导体的发光器件由具有Ga面的纤锌矿晶格结构的氮化物半导体形成。 该器件具有衬底，缓冲层，第一p型接触层，第二p型接触层，第一孔扩散层，第二孔扩散层，发光有源区，第二电子扩散层， 第一电子，第一n型接触层，其顺序堆叠。 这种结构可以由于自发极化和在具有Ga面的纤锌矿晶格结构中的压电极化而在异质界面处形成的准二维自由电子和自由空穴气体，从而提高了发射均匀性和发射效率 发光装置。