公开(公告)号：US08723222B2

公开(公告)日：2014-05-13

申请号：US13548522

申请日：2012-07-13

申请人： Sung Bum Bae ,  Eun Soo Nam ,  Jae Kyoung Mun ,  Sung Bock Kim ,  Hae Cheon Kim ,  Chull Won Ju ,  Sang Choon Ko ,  Jong-Won Lim ,  Ho Kyun Ahn ,  Woo Jin Chang ,  Young Rak Park

发明人： Sung Bum Bae ,  Eun Soo Nam ,  Jae Kyoung Mun ,  Sung Bock Kim ,  Hae Cheon Kim ,  Chull Won Ju ,  Sang Choon Ko ,  Jong-Won Lim ,  Ho Kyun Ahn ,  Woo Jin Chang ,  Young Rak Park

IPC分类号： H01L31/102

CPC分类号： H01L29/66446 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0883

摘要： The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.

摘要翻译： 本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可以通过再生技术在同一衬底上实现各种氮化物一体化结构（ 用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG） 。

公开(公告)号：US20130020649A1

公开(公告)日：2013-01-24

申请号：US13548522

申请日：2012-07-13

申请人： Sung Bum BAE ,  Eun Soo NAM ,  Jae Kyoung MUN ,  Sung Bock KIM ,  Hae Cheon KIM ,  Chull Won JU ,  Sang Choon KO ,  Jong-Won LIM ,  Ho Kyun AHN ,  Woo Jin CHANG ,  Young Rak PARK

发明人： Sung Bum BAE ,  Eun Soo NAM ,  Jae Kyoung MUN ,  Sung Bock KIM ,  Hae Cheon KIM ,  Chull Won JU ,  Sang Choon KO ,  Jong-Won LIM ,  Ho Kyun AHN ,  Woo Jin CHANG ,  Young Rak PARK

IPC分类号： H01L27/088 ,  H01L21/20 ,  H01L27/08

CPC分类号： H01L29/66446 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0883

摘要： The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.

摘要翻译： 本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可以通过再生技术在同一衬底上实现各种氮化物一体化结构（ 用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG） 。

公开(公告)号：US20120292634A1

公开(公告)日：2012-11-22

申请号：US13473561

申请日：2012-05-16

申请人： Sung Bum BAE

发明人： Sung Bum BAE

IPC分类号： H01L33/40 ,  H01L33/42

CPC分类号： H01L33/387 ,  H01L33/42

摘要： Disclosed are a microarray type nitride light emitting device and a method of manufacturing the same. More particularly, a uniform current distribution property is ensured by dividing a fine light emitting region by using a first transparent contact layer according to a resistance change property in heat treatment of a material of a transparent conducting oxide used as a transparent contact layer, and connecting the divided light emitting regions by using a second transparent contact layer.

摘要翻译： 公开了一种微阵列型氮化物发光器件及其制造方法。 更具体地，通过根据用作透明接触层的透明导电氧化物的材料的热处理中的电阻变化特性，通过使用第一透明接触层来划分精细发光区域来确保均匀的电流分布特性，并且连接 通过使用第二透明接触层来分割发光区域。

公开(公告)号：US07998771B2

公开(公告)日：2011-08-16

申请号：US12446635

申请日：2007-11-26

申请人： Sung Bum Bae

发明人： Sung Bum Bae

IPC分类号： H01L21/00

CPC分类号： H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

摘要： Provided is a method of manufacturing a light emitting diode using a nitride semiconductor, which including the steps of: forming n- and p-type current spreading layers using a hetero-junction structure; forming trenches by dry-etching the n- and p-type current spreading layers; forming an n-type metal electrode layer in the trench of the n-type current spreading layer; forming a p-type metal electrode layer in the trench of the p-type current spreading layer; and forming a transparent electrode layer on the p-type metal electrode layer, thereby improving current spreading characteristics as compared with the conventional method of manufacturing the light emitting diode, and enhancing operating characteristics of the light emitting diode.

摘要翻译： 提供一种使用氮化物半导体制造发光二极管的方法，其包括以下步骤：使用异质结结构形成n型和p型电流扩散层; 通过干蚀刻n型和p型电流扩展层形成沟槽; 在n型电流扩展层的沟槽中形成n型金属电极层; 在p型电流扩散层的沟槽中形成p型金属电极层; 在p型金属电极层上形成透明电极层，与传统的发光二极管的制造方法相比，提高了电流扩散特性，提高了发光二极管的工作特性。

公开(公告)号：US20130087763A1

公开(公告)日：2013-04-11

申请号：US13609352

申请日：2012-09-11

申请人： Sung Bock Kim ,  Sung-Bum Bae

发明人： Sung Bock Kim ,  Sung-Bum Bae

IPC分类号： H01L33/06 ,  H01L33/16

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/16 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The inventive concept provides light emitting diodes and methods of manufacturing the same. The light emitting diode may include a first electrode layer, a light emitting layer on the first electrode layer, a second electrode layer on the light emitting layer, and a buffer layer formed on the second electrode layer, the buffer layer having concave-convex patterns increasing extraction efficiency of light generated from the light emitting layer.

摘要翻译： 本发明的概念提供了发光二极管及其制造方法。 发光二极管可以包括第一电极层，第一电极层上的发光层，发光层上的第二电极层和形成在第二电极层上的缓冲层，缓冲层具有凹凸图案 提高从发光层产生的光的提取效率。

公开(公告)号：US20130069173A1

公开(公告)日：2013-03-21

申请号：US13592560

申请日：2012-08-23

申请人： Woo Jin CHANG ,  Jong Won LIM ,  Ho Kyun AHN ,  Sang Choon KO ,  Sung Bum BAE ,  Chull Won JU ,  Young Rak PARK ,  Jae Kyoung MUN ,  Eun Soo NAM

发明人： Woo Jin CHANG ,  Jong Won LIM ,  Ho Kyun AHN ,  Sang Choon KO ,  Sung Bum BAE ,  Chull Won JU ,  Young Rak PARK ,  Jae Kyoung MUN ,  Eun Soo NAM

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66901 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

摘要： Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode;and a metal configured to connect the field plate and the source electrode.

摘要翻译： 公开了功率半导体器件及其制造方法，其可以通过形成在栅电极和漏电极之间的场板来增加器件的击穿电压，并且同时实现更容易的制造工艺。 根据本公开的示例性实施例的功率半导体器件包括形成在衬底上的源电极和漏电极; 形成在所述源电极和所述漏电极之间的电介质层具有比所述两个电极的高度低的高度，并且包括暴露所述衬底的蚀刻部分; 形成在蚀刻部分上的栅电极; 形成在栅电极和漏电极之间的电介质层上的场板; 以及配置成连接场板和源电极的金属。

公开(公告)号：US07964882B2

公开(公告)日：2011-06-21

申请号：US12446513

申请日：2007-10-02

申请人： Kyu Seok Lee ,  Sung Bum Bae

发明人： Kyu Seok Lee ,  Sung Bum Bae

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L33/18 ,  H01L33/32

摘要： A nitride semiconductor-based light emitting device is provided. The nitride semiconductor-based light emitting device is formed of a nitride semiconductor having a wurtzite lattice structure with the Ga face. The device has a substrate, a buffer layer, a first p-type contact layer, a second p-type contact layer, a first hole diffusion layer, a second hole diffusion layer, a light emitting active region, a second electron diffusion layer, a first electron diffusion layer, a second n-type contact layer and a first n-type contact layer, which are sequentially stacked. Such a structure may effectively employ quasi-two-dimensional free electron and free hole gases formed at heterojunction interfaces due to the spontaneous polarization and the piezoelectric polarization in the wurtzite lattice structure with the Ga face, and thus enhances the emission uniformity and emission efficiency of the light emitting device.

摘要翻译： 提供了一种基于氮化物半导体的发光器件。 基于氮化物半导体的发光器件由具有Ga面的纤锌矿晶格结构的氮化物半导体形成。 该器件具有衬底，缓冲层，第一p型接触层，第二p型接触层，第一孔扩散层，第二孔扩散层，发光有源区，第二电子扩散层， 第一电子扩散层，第二n型接触层和第一n型接触层。 这种结构可以由于自发极化和在具有Ga面的纤锌矿晶格结构中的压电极化而在异质界面处形成的准二维自由电子和自由空穴气体，从而提高了发射均匀性和发射效率 发光装置。

公开(公告)号：US20100240162A1

公开(公告)日：2010-09-23

申请号：US12446635

申请日：2007-11-26

申请人： Sung Bum Bae

发明人： Sung Bum Bae

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

摘要： Provided is a method of manufacturing a light emitting diode using a nitride semiconductor, which including the steps of: forming n- and p-type current spreading layers using a hetero-junction structure; forming trenches by dry-etching the n- and p-type current spreading layers; forming an n-type metal electrode layer in the trench of the n-type current spreading layer; forming a p-type metal electrode layer in the trench of the p-type current spreading layer; and forming a transparent electrode layer on the p-type metal electrode layer, thereby improving current spreading characteristics as compared with the conventional method of manufacturing the light emitting diode, and enhancing operating characteristics of the light emitting diode.

摘要翻译： 提供一种使用氮化物半导体制造发光二极管的方法，其包括以下步骤：使用异质结结构形成n型和p型电流扩散层; 通过干蚀刻n型和p型电流扩展层形成沟槽; 在n型电流扩展层的沟槽中形成n型金属电极层; 在p型电流扩散层的沟槽中形成p型金属电极层; 在p型金属电极层上形成透明电极层，与传统的发光二极管的制造方法相比，提高了电流扩散特性，提高了发光二极管的工作特性。

公开(公告)号：US08772833B2

公开(公告)日：2014-07-08

申请号：US13592560

申请日：2012-08-23

申请人： Woo Jin Chang ,  Jong Won Lim ,  Ho Kyun Ahn ,  Sang Choon Ko ,  Sung Bum Bae ,  Chull Won Ju ,  Young Rak Park ,  Jae Kyoung Mun ,  Eun Soo Nam

发明人： Woo Jin Chang ,  Jong Won Lim ,  Ho Kyun Ahn ,  Sang Choon Ko ,  Sung Bum Bae ,  Chull Won Ju ,  Young Rak Park ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC分类号： H01L29/15

CPC分类号： H01L29/66901 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

摘要： Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode; and a metal configured to connect the field plate and the source electrode.

摘要翻译： 公开了功率半导体器件及其制造方法，其可以通过形成在栅电极和漏电极之间的场板来增加器件的击穿电压，并且同时实现更容易的制造工艺。 根据本公开的示例性实施例的功率半导体器件包括形成在衬底上的源电极和漏电极; 形成在所述源电极和所述漏电极之间的电介质层具有比所述两个电极的高度低的高度，并且包括暴露所述衬底的蚀刻部分; 形成在蚀刻部分上的栅电极; 形成在栅电极和漏电极之间的电介质层上的场板; 以及配置成连接场板和源电极的金属。

公开(公告)号：US20130069127A1

公开(公告)日：2013-03-21

申请号：US13556377

申请日：2012-07-24

申请人： Ho Kyun AHN ,  Jong-Won Lim ,  Sung Bum Bae ,  Sang Choon Ko ,  Young Rak Park ,  Woo Jin Chang ,  Jae Kyoung Mun ,  Eun Soo Nam ,  Jeong Jin Kim ,  Chull Won Ju

发明人： Ho Kyun AHN ,  Jong-Won Lim ,  Sung Bum Bae ,  Sang Choon Ko ,  Young Rak Park ,  Woo Jin Chang ,  Jae Kyoung Mun ,  Eun Soo Nam ,  Jeong Jin Kim ,  Chull Won Ju

IPC分类号： H01L29/78 ,  H01L21/20

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/8128

摘要： A method for fabricating a field effect transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a cap layer, an ohmic metal layer and an insulating layer on a substrate; forming multilayered photoresists on the insulating layer; patterning the multilayered photoresists to form a photoresist pattern including a first opening for gate electrode and a second opening for field electrode; etching the insulating layer by using the photoresist pattern as an etching mask so that the insulating layer in the first opening is etched more deeply and the cap layer is exposed through the first opening; etching the cap layer exposed by etching the insulating layer through the first opening to form a gate recess region; and depositing a metal on the gate recess region and the etched insulating layer to form a gate-field electrode layer.

摘要翻译： 根据本公开的示例性实施例的制造场效应晶体管的方法包括：在衬底上形成有源层，覆盖层，欧姆金属层和绝缘层; 在所述绝缘层上形成多层光致抗蚀剂; 图案化多层光致抗蚀剂以形成包括用于栅电极的第一开口和场电极的第二开口的光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为蚀刻掩模来蚀刻绝缘层，使得第一开口中的绝缘层被更深地蚀刻并且盖层通过第一开口暴露; 通过蚀刻绝缘层通过第一开口蚀刻暴露的盖层，以形成栅极凹陷区域; 以及在所述栅极凹部区域和所述蚀刻绝缘层上沉积金属以形成栅极电极层。