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19 条记录 (耗时 0.013 秒)

    PHOSPHOR AND LIGHT-EMITTING DEVICE
    14.
    发明申请
    PHOSPHOR AND LIGHT-EMITTING DEVICE 有权
    磷光和发光装置

    公开(公告)号：US20150084079A1

    公开(公告)日：2015-03-26

    申请号：US14377071

    申请日：2012-08-09

    申请人： Keita Kobayashi ,  Yasuhito Fushii ,  Kohki Ichikawa ,  Suzuya Yamada ,  Hideyuku Emoto

    发明人： Keita Kobayashi ,  Yasuhito Fushii ,  Kohki Ichikawa ,  Suzuya Yamada ,  Hideyuku Emoto

    IPC分类号： C09K11/64 ,  C09K11/59 ,  H01L33/58

    CPC分类号： C09K11/646 ,  C09K11/0883 ,  C09K11/59 ,  C09K11/7734 ,  H01L33/504 ,  H01L33/58 ,  Y02B20/181

    摘要： A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an oxynitride phosphor (C) having a peak wavelength of at least 645 nm but not higher than 655 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the oxynitride phosphor (C) is at least 10% but not higher than 20% by mass.

    摘要翻译： 提供具有高温特性和长期可靠性的高亮度荧光体和使用该荧光体的白色发光装置。 荧光体含有峰值波长为至少525nm但不高于535nm，荧光强度为至少250％但不高于270％的硅酸盐荧光体（A） 具有至少540nm但不高于545nm的峰值波长和至少260％但不高于280％的荧光强度的氧氮化物荧光体（B）; 和具有至少645nm但不高于655nm的峰值波长的氧氮化物荧光体（C），其中硅酸盐荧光体（A）的量为至少20质量％但不高于35质量％ 氧氮化物荧光体（B）为至少50质量％以上且70质量％以下，氧氮化物荧光体（C）的含量为10质量％以上且20质量％以下。

    PHOSPHOR AND LIGHT-EMITTING DEVICE
    15.
    发明申请
    PHOSPHOR AND LIGHT-EMITTING DEVICE 有权
    磷光和发光装置

    公开(公告)号：US20150054010A1

    公开(公告)日：2015-02-26

    申请号：US14377487

    申请日：2012-08-09

    申请人： Keita Kobayashi ,  Kohki Ichikawa ,  Yasuhito Fushii ,  Hideyuku Emoto ,  Suzuya Yamada

    发明人： Keita Kobayashi ,  Kohki Ichikawa ,  Yasuhito Fushii ,  Hideyuku Emoto ,  Suzuya Yamada

    IPC分类号： H01L33/50 ,  C09K11/59 ,  C09K11/64 ,  H01L33/48

    CPC分类号： H01L33/502 ,  C09K11/08 ,  C09K11/59 ,  C09K11/592 ,  C09K11/62 ,  C09K11/64 ,  C09K11/646 ,  H01L33/486 ,  H01L33/504 ,  Y02B20/181

    摘要： A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an nitride phosphor (C) having a peak wavelength of at least 615 nm but not higher than 625 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the nitride phosphor (C) is at least 10% but not higher than 20% by mass.

    摘要翻译： 提供具有高温特性和长期可靠性的高亮度荧光体和使用该荧光体的白色发光装置。 荧光体含有峰值波长为至少525nm但不高于535nm，荧光强度为至少250％但不高于270％的硅酸盐荧光体（A） 具有至少540nm但不高于545nm的峰值波长和至少260％但不高于280％的荧光强度的氧氮化物荧光体（B）; 和具有至少615nm但不高于625nm的峰值波长的氮化物荧光体（C），其中硅酸盐荧光体（A）的量为至少20质量％但不高于35质量％ 氮氧化物荧光体（B）的含量为50质量％以上且70质量％以下，氮化物荧光体（C）的含量为10质量％以上且20质量％以下。

    METHOD OF MANUFACTURING BETA-SIALON
    17.
    发明申请
    METHOD OF MANUFACTURING BETA-SIALON 审中-公开
    制造BET-SIALON的方法

    公开(公告)号：US20120298919A1

    公开(公告)日：2012-11-29

    申请号：US13577401

    申请日：2011-07-04

    申请人： Go Takeda ,  Hisayuki Hashimoto ,  Hideyuki Emoto ,  Suzuya Yamada

    发明人： Go Takeda ,  Hisayuki Hashimoto ,  Hideyuki Emoto ,  Suzuya Yamada

    IPC分类号： C09K11/80

    CPC分类号： C09K11/7734

    摘要： A method of manufacturing β-SiAlON represented by a general formula Si6-zAlzOzN8-z:Eu, including a baking step for baking a powdered material that contains Al content from 0.3 to 1.2 mass %, O content from 0.15 to 1 mass %, O/Al molar ratio from 0.9 to 1.3, Si content from 58 to 60 mass %, N content from 37 to 40 mass %, N/Si molar ratio from 1.25 to 1.45, and Eu content from 0.3 to 0.7 mass %. The baking step is a step of baking the powdered material in a nitrogen atmosphere at temperatures from 1850° C. to 2050° C., and the manufactured β-SiAlON satisfies 0.280≦x≦0.340 and 0.630≦y≦0.675 on the CIExy chromaticity coordinate.

    摘要翻译： 一种制造由通式Si 6-z Al z O z N 8 -z：Eu表示的-SiAlON的方法，包括用于焙烧含有0.3至1.2质量％的Al含量的粉末材料，O含量为0.15至1质量％的烘烤步骤， O / Al摩尔比为0.9〜1.3，Si含量为58〜60质量％，N含量为37〜40质量％，N / Si摩尔比为1.25〜1.45，Eu含量为0.3〜0.7质量％。 烘烤步骤是在氮气气氛中在1850℃至2050℃的温度下烘烤粉末材料的步骤，并且所制造的-SiAlON满足0.280＆nlE; x＆lt; l1; 0.340和0.630＆nlE; y＆nlE; 0.675 on CIExy色度坐标。