Abstract:
A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.
Abstract:
Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
Abstract:
A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.
Abstract:
A first and a second static-pressure gas bearings supporting a rod at two locations in the axial direction in the non-contact manner are provided, in which the first static-pressure gas bearing is fixedly supported by a bearing housing, while the second static-pressure gas bearing is supported capable of displacement through a movable support mechanism. And this movable support mechanism has an actuator and suppresses contact of the rod with the static-pressure gas bearings by displacing the shaft center of the second static-pressure gas bearing with respect to the first static-pressure gas bearing by this actuator according to a load acting on the rod.
Abstract:
A piezoelectric element is manufactured by applying a masking agent to a surface of a piezoelectric material to form a film of the masking agent on the surface of the piezoelectric material. The film of the masking agent is patterned into a masking pattern. Oil repellent is selectively applied to surface portions of the substrate which are not covered with the patterned film. The patterned film is held in contact with a vapor of a solvent for the masking agent, diluted with an inert gas, to fluidize the film to a domed shape on the surface of the piezoelectric material. The diluted vapor is formed by bubbling the solvent with the inert gas. The dome-shaped film is then cured and the piezoelectric material is dry etched together with the cured film to process the piezoelectric material into a three-dimensional convex profile corresponding to the thickness distribution of the domed shape.
Abstract:
A serial-transmission type memory system with a hot swapping function is provided which is capable of replacing a defective memory module without stopping the system. One end of a row of memory modules is connected to one input-output section of a memory controller and the memory controller exerts control so that, when a failure occurs in any of the memory modules, by disconnecting the defective memory module from the memory module in its preceding stage and by sequentially connecting the memory module in the row of the memory modules in a next and onward stage and a spare memory module connected to another end of the row of the memory modules to the other input-output section of the memory controller in series through second read and write signal lines to gain access to each of the memory modules.
Abstract:
Disclosed is a solid-state imaging device which includes an imaging region including pixels arranged two-dimensionally, each of the pixels including a photoelectric conversion element and a plurality of pixel transistors for reading out signals outputted from the photoelectric conversion element, and wirings formed on stacked layers for driving each of the pixels. A shading part between the pixels is formed by combining first and second wirings selected from the wirings.
Abstract:
An amino acid composition comprises alanine, arginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, valine, and glutamine. The amino acid composition of the present invention has such an effect that it can improve the action of promoting the process wherein the body fat is converted into the energy required for the physical exercise during and/or after the anoxic motions performed under an extremely high load.
Abstract:
The present invention herein provides an amino acid composition which consists essentially of (1) glycine, (2) at least one member selected from the group consisting of proline and alanine, and (3) at least one member selected from the group consisting of glutamine and glutamic acid; as well as such an amino acid composition which further comprises at least one member selected from the group consisting of CoA, acetyl CoA, and pyruvic acid. This amino acid composition has an effect of accelerating the combustion of the body fat.
Abstract:
A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.