中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

31 records (took 0.018 seconds)

    Epitaxial lift off in inverted metamorphic multijunction solar cells
    12.
    发明授权
    Epitaxial lift off in inverted metamorphic multijunction solar cells 有权
    倒置变质多结太阳能电池外延提升

    公开(公告)号：US08778199B2

    公开(公告)日：2014-07-15

    申请号：US13465477

    申请日：2012-05-07

    Applicant: Arthur Cornfeld ,  Daniel McGlynn ,  Tansen Varghese

    Inventor： Arthur Cornfeld ,  Daniel McGlynn ,  Tansen Varghese

    IPC: B29D11/00 ,  H01L31/0735 ,  H01L31/0725 ,  H01L31/18 ,  H01L31/0687

    CPC classification number: H01L31/1844 ,  H01L31/06875 ,  H01L31/0725 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521

    Abstract: The present disclosure provides a process for manufacturing a solar cell by selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown. In some embodiments the process includes, among other things, providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a flexible support on top of the sequence of layers; etching said separation layer while applying an agitating action to the etchant solution so as to remove said flexible support with said epitaxial layer from said first substrate.

    Abstract translation: 本公开提供了一种通过从其生长的单晶衬底选择性地释放外延层来制造太阳能电池的方法。 在一些实施例中，该方法尤其包括提供第一基底; 在所述第一衬底上沉积分离层; 在所述分离层上沉积形成太阳能电池的半导体材料层序列; 将柔性支撑件安装并粘合在层序列之上; 蚀刻所述分离层，同时向蚀刻剂溶液施加搅拌作用，以便从所述第一基底上除去所述外延层的所述柔性载体。

    GRID DESIGN FOR III-V COMPOUND SEMICONDUCTOR CELL
    13.
    发明申请
    GRID DESIGN FOR III-V COMPOUND SEMICONDUCTOR CELL 审中-公开
    III-V化合物半导体电池的网格设计

    公开(公告)号：US20120285519A1

    公开(公告)日：2012-11-15

    申请号：US13104451

    申请日：2011-05-10

    Applicant: Richard W. Hoffman, JR. ,  Pravin Patel ,  Tansen Varghese

    Inventor： Richard W. Hoffman, JR. ,  Pravin Patel ,  Tansen Varghese

    IPC: H01L31/06

    CPC classification number: H01L31/078 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/0693 ,  Y02E10/544 ,  Y02P70/521

    Abstract: A photovoltaic solar cell for producing energy from the sun including a germanium substrate including a first photoactive junction and forming a bottom solar subcell; a gallium arsenide middle cell disposed on said substrate; an indium gallium phosphide top cell disposed over the middle cell; and a surface grid including a plurality of spaced apart grid lines, wherein the grid lines have a thickness greater than 7 microns, and each grid line has a cross-section in the shape of a trapezoid with a cross-sectional area between 45 and 55 square microns.

    Abstract translation: 一种用于从太阳生成能量的光伏太阳能电池，其包括包含第一光活性连接点并形成底部太阳能子电池的锗衬底; 设置在所述衬底上的砷化镓中间电池; 设置在中间电池上方的磷化铟镓顶电池; 以及包括多个间隔开的网格线的表面网格，其中网格线具有大于7微米的厚度，并且每个网格线具有梯形形状的横截面，横截面积在45和55之间 平方微米。

    Wafer level interconnection of inverted metamorphic multijunction solar cells
    14.
    发明授权
    Wafer level interconnection of inverted metamorphic multijunction solar cells 有权
    倒置变质多结太阳能电池晶圆级互连

    公开(公告)号：US08263853B2

    公开(公告)日：2012-09-11

    申请号：US12187477

    申请日：2008-08-07

    Applicant: Tansen Varghese

    Inventor： Tansen Varghese

    IPC: H01L31/00 ,  H01L31/042 ,  H01L21/302

    CPC classification number: H01L31/078 ,  H01L27/1421 ,  H01L31/0475 ,  H01L31/048 ,  H01L31/0504 ,  H01L31/0508 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/1892 ,  Y02E10/544

    Abstract: A method of forming a plurality of discrete, interconnected solar cells mounted on a carrier by providing a first semiconductor substrate; depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell structure; forming a metal back contact layer over the solar cell structure; mounting a carrier on top of the metal back contact; removing the first substrate; and lithographically patterning and etching the solar cell structure to form a plurality of discrete solar cells mounted on the carrier.

    Abstract translation: 一种通过提供第一半导体衬底形成安装在载体上的多个分立的互连太阳能电池的方法; 在第一衬底上沉积形成太阳能电池结构的半导体材料层序列; 在所述太阳能电池结构上形成金属背接触层; 将载体安装在金属背接触件的顶部; 去除第一衬底; 并且光刻地图案化和蚀刻太阳能电池结构以形成安装在载体上的多个分立的太阳能电池。

    Growth substrates for inverted metamorphic multijunction solar cells
    15.
    发明授权
    Growth substrates for inverted metamorphic multijunction solar cells 有权
    倒置变质多结太阳能电池的生长衬底

    公开(公告)号：US07785989B2

    公开(公告)日：2010-08-31

    申请号：US12337014

    申请日：2008-12-17

    Applicant: Paul R. Sharps ,  Arthur Cornfeld ,  Tansen Varghese ,  Fred Newman ,  Jacqueline Diaz

    Inventor： Paul R. Sharps ,  Arthur Cornfeld ,  Tansen Varghese ,  Fred Newman ,  Jacqueline Diaz

    IPC: H01L21/30 ,  H01L21/46

    CPC classification number: H01L29/045 ,  H01L31/0392 ,  H01L31/06875 ,  H01L31/0735 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S438/977

    Abstract: A method of manufacturing a solar cell by providing a gallium arsenide carrier with a prepared bonding surface; providing a sapphire substrate; bonding the gallium arsenide carrier and the sapphire substrate to produce a composite structure; detaching the bulk of the gallium arsenide carrier from the composite structure, leaving a gallium arsenide growth substrate on the sapphire substrate; and depositing a sequence of layers of semiconductor material forming a solar cell on the growth substrate. For some solar cells, the method further includes mounting a surrogate second substrate on top of the sequence of layers of semiconductor material forming a solar cell; and removing the growth substrate.

    Abstract translation: 一种制造太阳能电池的方法，其通过提供具有制备的接合表面的砷化镓载体; 提供蓝宝石衬底; 键合砷化镓载体和蓝宝石衬底以产生复合结构; 从复合结构中分离大部分砷化镓载体，在蓝宝石衬底上留下砷化镓生长衬底; 以及在生长衬底上沉积形成太阳能电池的半导体材料层序列。 对于一些太阳能电池，该方法还包括将替代第二衬底安装在形成太阳能电池的半导体材料层序列之上; 并除去生长底物。

    WAFER LEVEL INTERCONNECTION OF INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS
    19.
    发明申请
    WAFER LEVEL INTERCONNECTION OF INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS 有权
    反相金属多功能太阳能电池的波形水平互连

    公开(公告)号：US20130014803A1

    公开(公告)日：2013-01-17

    申请号：US13560663

    申请日：2012-07-27

    Applicant: Tansen Varghese

    Inventor： Tansen Varghese

    IPC: H01L31/042 ,  H01L31/18

    CPC classification number: H01L31/078 ,  H01L27/1421 ,  H01L31/0475 ,  H01L31/048 ,  H01L31/0504 ,  H01L31/0508 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/1892 ,  Y02E10/544

    Abstract: A method of forming a plurality of discrete, interconnected solar cells mounted on a carrier by providing a first semiconductor substrate; depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell structure; forming a metal back contact layer over the solar cell structure; mounting a carrier on top of the metal back contact; removing the first substrate; and lithographically patterning and etching the solar cell structure to form a plurality of discrete solar cells mounted on the carrier.

    Abstract translation: 一种通过提供第一半导体衬底形成安装在载体上的多个分立的互连太阳能电池的方法; 在第一衬底上沉积形成太阳能电池结构的半导体材料层序列; 在所述太阳能电池结构上形成金属背接触层; 将载体安装在金属背接触件的顶部; 去除第一衬底; 并且光刻地图案化和蚀刻太阳能电池结构以形成安装在载体上的多个分立的太阳能电池。

    MOUNTING OF SOLAR CELLS ON A FLEXIBLE SUBSTRATE
    20.
    发明申请
    MOUNTING OF SOLAR CELLS ON A FLEXIBLE SUBSTRATE 审中-公开
    太阳能电池在柔性基板上的安装

    公开(公告)号：US20120142139A1

    公开(公告)日：2012-06-07

    申请号：US13372068

    申请日：2012-02-13

    Applicant: Tansen Varghese

    Inventor： Tansen Varghese

    IPC: H01L31/18

    CPC classification number: H01L21/6835 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/06875 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1896 ,  Y02E10/544 ,  Y02P70/521

    Abstract: According to an embodiment, a method of manufacturing a solar cell includes depositing a sequence of layers of semiconductor material forming at least one solar cell on a first substrate; temporarily bonding a flexible film to a support second substrate; permanently bonding the sequence of layers of semiconductor material to the flexible film so that the flexible film is interposed between the first and second substrates; thinning the first substrate while bonded to the support substrate to expose the sequence of layers of semiconductor material; and subsequently removing the support substrate from the flexible film.

    Abstract translation: 根据实施例，制造太阳能电池的方法包括在第一基板上沉积形成至少一个太阳能电池的半导体材料层序列; 暂时将柔性膜粘合到支撑体第二基板上; 将半导体材料层的序列永久地接合到柔性膜，使得柔性膜插入在第一和第二基板之间; 在结合到支撑衬底上时使第一衬底细化以暴露半导体材料层的顺序; 随后从柔性膜移除支撑基板。

Patent Agency Ranking