Pressure sensor
    11.
    发明授权
    Pressure sensor 失效
    压力传感器

    公开(公告)号:US5450754A

    公开(公告)日:1995-09-19

    申请号:US207067

    申请日:1994-03-08

    CPC classification number: G01L19/02 G01L9/0073

    Abstract: A pressure sensor comprises a matrix of diaphragms of polysilicon which, via a structure of electrical conductors, are arranged at an upper side of a silicon substrate for the determination of their variable electrical capacitance dependent on the pressure stressing. These diaphragms are present in at least two different sizes. Capacitances of these diaphragms of a same size are respectively connected to form a sub-unit such that basic capacitances of these sub-units are of a respectively same size.

    Abstract translation: 压力传感器包括多晶硅膜的矩阵,其经由电导体的结构布置在硅衬底的上侧,用于根据压力应力确定其可变电容。 这些隔膜以至少两种不同的尺寸存在。 相同尺寸的这些隔膜的电容分别连接以形成子单元,使得这些子单元的基本电容具有相同的尺寸。

    Sensor for sensing fingerpaints and method for producing the sensor
    12.
    发明授权
    Sensor for sensing fingerpaints and method for producing the sensor 失效
    用于感应指纹的传感器和用于产生传感器的方法

    公开(公告)号:US5373181A

    公开(公告)日:1994-12-13

    申请号:US142713

    申请日:1993-10-25

    CPC classification number: G01L1/146 G01L1/148 G06K9/0002

    Abstract: A grid-like arrangement of membranes of doped polysilicon are mounted on a substrate but are electrically insulated therefrom each membrane extends over a cavity and is joined to the substrate at at least two supporting locations so that they cavity lies between the membrane and the substrate. Changes in an electrical quantity existing between the membranes and the substrate are measured as forces exerted on the grid-like arrangement of sensor elements so that the ridges in the skin on a finger tip may be sensed for detecting a fingerprint.

    Abstract translation: 掺杂多晶硅膜的栅状布置安装在基板上,但是与其电绝缘,每个膜在空腔上延伸并且在至少两个支撑位置处连接到基板,使得其空腔位于膜和基板之间。 测量存在于膜和基底之间的电量的变化作为施加在传感器元件的格栅状布置上的力,从而可以感测指尖上的皮肤中的脊以检测指纹。

    Surface micromachined ultrasonic transducer
    13.
    发明授权
    Surface micromachined ultrasonic transducer 失效
    表面微机械超声换能器

    公开(公告)号:US06320239B1

    公开(公告)日:2001-11-20

    申请号:US09297243

    申请日:1999-04-27

    CPC classification number: G01H11/06

    Abstract: A spacer layer (7) with a cavity (8) etched out therein and a diaphragm (2) arranged thereabove on the spacer layer are located on a silicon substrate (1) with a doped region (5) formed therein, whereby the doped region and the diaphragm are electrically connected via terminal contacts (4, 6) to electronic components (13) that are likewise integrated in the substrate (1). The electronic component are a component part of the operating circuit that can also be used for the drive of the diaphragm and for evaluating the diaphragm oscillations. The integration makes it possible to arrange the micromachined transducer components as array that can be electronically driven as phased array.

    Abstract translation: 具有蚀刻在其中的空腔(8)的间隔层(7)和在间隔层上方布置在其上的膜片(2)位于其上形成有掺杂区域(5)的硅衬底(1)上,由此掺杂区域 并且隔膜通过端子触点(4,6)电连接到同样集成在基板(1)中的电子部件(13)。 电子部件是操作电路的组成部分,其也可用于驱动隔膜并用于评估隔膜振荡。 该集成使得可以将微机械传感器组件布置为可以作为相控阵列电子驱动的阵列。

    Pressure sensor
    14.
    发明授权
    Pressure sensor 失效
    压力传感器

    公开(公告)号:US5883779A

    公开(公告)日:1999-03-16

    申请号:US836964

    申请日:1997-05-22

    CPC classification number: G01L9/0042 G01L9/0073

    Abstract: Micromechanically producible capacitively operating pressure sensor, in which there is a diaphragm, formed by a diaphragm layer (5), on a silicon substrate (1) over a hollow (4) in an auxiliary layer (3), and in which there is, on the side of the diaphragm averted from the hollow (4) and at a distance therefrom, an electrode formed by an electrode layer (8) with recesses (9) therein as a counter-electrode to the electrically conductive diaphragm layer (5). Given a rise in the external pressure, it is possible by applying a voltage between the diaphragm layer (5) and the electrode layer (8) to prevent the diaphragm from deflecting in the direction of the substrate, and to determine the magnitude of the pressure from the voltage required therefor.

    Abstract translation: PCT No.PCT / DE95 / 01587第 371日期:1997年5月22日 102(e)日期1997年5月22日PCT提交1995年11月15日PCT公布。 公开号WO96 / 16319 日期1996年5月30日在机械上可生产的电容式操作压力传感器,其中在隔离层(5)上形成有隔膜,隔膜层叠在辅助层(3)上的中空部分(4)上的硅衬底(1)上, 在隔膜的从中空部分(4)远离一定距离处的隔膜的侧面,由电极层(8)形成的电极,其中具有凹槽(9)作为导电隔膜层的相对电极 (5)。 考虑到外部压力的升高,可以通过在隔膜层(5)和电极层(8)之间施加电压来防止隔膜沿着基板的方向偏转,并且确定压力的大小 从所需的电压。

    Method for the selective removal of silicon dioxide
    15.
    发明授权
    Method for the selective removal of silicon dioxide 失效
    选择性去除二氧化硅的方法

    公开(公告)号:US5662772A

    公开(公告)日:1997-09-02

    申请号:US637237

    申请日:1996-04-24

    CPC classification number: H01L21/31116 Y10S438/935

    Abstract: In a method for the selective removal of SiO.sub.2 relative to semiconductor materials and/or metal, a specimen to be processed and containing SiO.sub.2 is placed into a chamber having at least one gas admission opening and one gas outlet opening. Using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor are admitted into the chamber. These gasses proceed to the SiO.sub.2 in a specimen in a quantity adequate for etching. However, the quantities of these gasses are limited such that a condensation of the water vapor to form liquid water on the specimen during the etching event is avoided. An etching event is then implemented. Water vapor that arises as a reaction product during the etching is eliminated through the gas outlet opening before the occurrence of condensation and, simultaneously, an inert gas is admitted into the chamber through the gas admission opening. These steps are repeated as needed.

    Abstract translation: 在相对于半导体材料和/或金属选择性去除SiO 2的方法中,将待处理并含有SiO 2的样品置于具有至少一个气体入口和一个气体出口的腔室中。 在气体入口处使用可控阀门,加入量的氟化氢气体和水蒸气进入腔室。 这些气体以足以蚀刻的量前进到样品中的SiO 2。 然而,这些气体的量受到限制,从而避免了在蚀刻事件期间水蒸气在样品上形成液态水的冷凝。 然后实施蚀刻事件。 在蚀刻期间作为反应产物产生的水蒸气在发生冷凝之前通过气体出口开口消除,同时惰性气体通过气体入口进入腔室。 根据需要重复这些步骤。

    Capacitive semiconductor pressure sensor
    16.
    发明授权
    Capacitive semiconductor pressure sensor 失效
    电容半导体压力传感器

    公开(公告)号:US5631428A

    公开(公告)日:1997-05-20

    申请号:US561854

    申请日:1995-11-22

    CPC classification number: G01L9/0073 G01L9/0042

    Abstract: A micromechanically manufacturable pressure sensor has a cavity produced in an auxiliary layer that is covered with a membrane layer, the cavity is produced via recesses in the membrane layer. These recesses are subsequently closed by portions of a closure layer. Further layers can be applied on the closure layer. Portions of the further layers and closure layer are removed above the membrane layer.

    Abstract translation: 微机械制造的压力传感器具有在辅助层中产生的腔,其被膜层覆盖,该空腔通过膜层中的凹槽产生。 这些凹部随后由闭合层的部分封闭。 另外的层可以施加在封闭层上。 另外的层和封闭层的一部分在膜层上方被去除。

    Method for capacitive image acquisition
    19.
    发明授权
    Method for capacitive image acquisition 失效
    电容式图像采集方法

    公开(公告)号:US06365888B2

    公开(公告)日:2002-04-02

    申请号:US09782733

    申请日:2001-02-13

    CPC classification number: G06K9/0002

    Abstract: A grid-shaped array of conductor areas is used for capacitive image acquisition. Shielding conductors are disposed in each case between the conductors that are provided for measurement. During a plurality of charging and discharging cycles, the potential is always carried along on the conductors belonging to a respective pixel in order to prevent displacement currents between the shielding capacitors. By way of example, a compensation line with a feedback operational amplifier can be used for identically altering the electrical potentials on the conductors.

    Abstract translation: 导体区域的格子阵列用于电容图像采集。 每个壳体中的屏蔽导体都设置在用于测量的导体之间。 在多个充电和放电循环期间,为了防止屏蔽电容器之间的位移电流,电势总是沿着属于相应像素的导体承载。 作为示例,具有反馈运算放大器的补偿线可以用于相同地改变导体上的电位。

    Capacitively measuring sensor and readout circuit
    20.
    发明授权
    Capacitively measuring sensor and readout circuit 失效
    电容式测量传感器和读出电路

    公开(公告)号:US5974895A

    公开(公告)日:1999-11-02

    申请号:US880651

    申请日:1997-06-23

    CPC classification number: G01D5/24 G01L9/12 G01P15/125 G01R27/2605

    Abstract: A capacitance to be measured is connected together with three further capacitances to form a bridge circuit, in which each two of the capacitors are connected in series, and these two series circuits are connected in parallel to one another, and which replaces a part of the input stage of a .SIGMA.-.DELTA. modulator. As inputs of this bridge circuit, terminals are provided at the ends of these series circuits, and as outputs terminals are respectively provided between the capacitors connected one after the other in series. In a sensor realized thereby, two capacitively measuring sensor elements of the same type are used. These capacitors are built into the bridge circuit together with two equally large reference capacitors in such a way that exactly one measurement capacitor and one reference capacitor is La connected is connected to each input and to each output of the bridge circuit.

    Abstract translation: 要测量的电容与三个另外的电容连接在一起形成桥接电路,其中每两个电容器串联连接,并且这两个串联电路彼此并联连接,并且其中的一部分 SIGMA-DELTA调制器的输入级。 作为该桥式电路的输入端子,在这些串联电路的端部设置有端子,在串联连接的电容器之间分别设置有输出端子。 在由此实现的传感器中,使用相同类型的两个电容测量传感器元件。 这些电容器与两个同样大的参考电容器一起内置在桥式电路中,使得一个测量电容器和一个参考电容器La连接到桥接电路的每个输入和每个输出。

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