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11.发明授权AA stacked graphene-diamond hybrid material by high temperature treatment of diamond and the fabrication method thereof 有权通过金刚石高温处理的AA叠层石墨烯 - 金刚石混合材料及其制造方法公开(公告)号：US08318268B2
公开(公告)日：2012-11-27
申请号：US13316634
申请日：2011-12-12
Applicant: Jae-Kap Lee , So-Hyung Lee , Seung-Cheol Lee , Jae-Pyoung Ahn , Jeon-Kook Lee , Wook-Seong Lee
Inventor： Jae-Kap Lee , So-Hyung Lee , Seung-Cheol Lee , Jae-Pyoung Ahn , Jeon-Kook Lee , Wook-Seong Lee
IPC: C23C16/00
CPC classification number: B01J3/006 , B01J19/088 , B01J2219/0809 , B01J2219/0879 , B01J2219/0894 , C01B32/20 , C01B32/25 , C01B32/28 , C30B29/04 , C30B33/02 , Y10T428/30
Abstract: There is provided a fabrication method for an AA stacked graphene-diamond hybrid material by converting, through a high temperature treatment on diamond, a diamond surface into graphene. According to the present invention, if various types of diamond are maintained at a certain temperature having a stable graphene phase (approximately greater than 1200° C.) in a hydrogen gas atmosphere, two diamond {111} lattice planes are converted into one graphene plate (2:1 conversion), whereby the diamond surface is converted into graphene in a certain thickness, thus to fabricate the AA stacked graphene-diamond hybrid material.
Abstract translation: 通过将金刚石上的高温处理，金刚石表面转化成石墨烯，提供了一种用于AA堆叠的石墨烯 - 金刚石混合材料的制造方法。 根据本发明，如果各种类型的金刚石在氢气气氛中保持在稳定的石墨烯相（大约大于1200℃）的一定温度下，则将两个菱形{111}晶格面转换为一个石墨烯板 （2:1转化），由此将金刚石表面转化成一定厚度的石墨烯，从而制造AA堆叠的石墨烯 - 金刚石混合材料。
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公开(公告)号：US20100047154A1
公开(公告)日：2010-02-25
申请号：US12545740
申请日：2009-08-21
Applicant: Jae-Kap LEE , So- Hyung LEE , Wook-Seong LEE
Inventor： Jae-Kap LEE , So- Hyung LEE , Wook-Seong LEE
IPC: C09C1/44
CPC classification number: C09C1/44 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B32/19 , C01B2204/04 , C01B2204/06 , C01P2002/77
Abstract: Disclosed is a method for fabricating graphene ribbons, comprising: preparing a graphitic material comprising stacked graphene helices; and cutting the graphitic material in a short form by applying energy to the graphitic material; and simultaneously or afterward, decomposing the graphitic material into short graphene ribbons. This method provides a mass production route to graphene ribbons.
Abstract translation: 公开了一种制造石墨烯带的方法，包括：制备包括堆积的石墨烯螺旋的石墨材料; 并通过向石墨材料施加能量来以短形式切割石墨材料; 同时或之后，将石墨材料分解成短的石墨烯带。 这种方法提供了石墨烯带的大规模生产路线。
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13.发明申请DC PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION APPARATUS IN THE ABSENCE OF POSITIVE COLUMN, METHOD FOR DEPOSITING MATERIAL IN THE ABSENCE OF POSITIVE COLUMN, AND DIAMOND THIN LAYER THEREBY 有权直流等离子体辅助化学气相沉积装置在正极柱的存在下，沉积材料在正极柱和金刚石薄层中的沉积方法公开(公告)号：US20080280135A1
公开(公告)日：2008-11-13
申请号：US11833679
申请日：2007-08-03
Applicant: Wook-Seong Lee , Young-Joon Baik , Jeung-Hyun Jeong , Ki-Woong Chae
Inventor： Wook-Seong Lee , Young-Joon Baik , Jeung-Hyun Jeong , Ki-Woong Chae
CPC classification number: C23C16/503 , C23C16/272 , Y10T428/268
Abstract: Disclosed are DC plasma assisted chemical vapor deposition (DC PA-CVD) apparatus operable in the absence of a positive column, a method for depositing a material by DC PA-CVD in the absence of a positive column, and a diamond thin film fabricated thereby. In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible. The diamond thin film fabricated by the method is uniform, contains no impurity, and has excellent crystallinity.
Abstract translation: 公开了在没有正极柱的情况下可操作的DC等离子体辅助化学气相沉积（DC PA-CVD）装置，在不存在正极柱的情况下通过DCPA-CVD沉积材料的方法和由其制造的金刚石薄膜 。 在不存在正极柱时沉积材料的方法中，通过在反应室中施加直流电压，在反应室内彼此面对的阴极和阳极之间产生放电，并将反应气体引入反应室， 从而将材料沉积在安装在阳极上并用作阳极的一部分的衬底上，其中材料在衬底上的沉积在阴极辉光和阳极辉光以薄层涂层形式存在的状态下进行 分别是阴极和衬底的表面，而正柱不存在或太小以致可以忽略。 通过该方法制造的金刚石薄膜是均匀的，不含杂质，并具有优异的结晶度。
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公开(公告)号：US5700518A
公开(公告)日：1997-12-23
申请号：US712707
申请日：1996-09-12
Applicant: Wook-Seong Lee , Young-Joon Baik , Kwang Yong Eun
Inventor： Wook-Seong Lee , Young-Joon Baik , Kwang Yong Eun
CPC classification number: C23C16/0227 , C23C16/27 , C25F3/02 , Y10T407/27
Abstract: A fabrication method for a diamond-coated cemented carbide cutting tool includes electrolytically etching the surface of a cemented carbide cutting tool with a NaOH or KOH aqueous solution or chemically etching the surface of the cemented carbide cutting tool with a KMnO.sub.4 +KOH aqueous solution, and depositing a diamond film on the cemented carbide cutting tool. A stronger etching effect than by using a Murakami solution can be achieved, and no poisonous material is included in the etchant. In addition, disposal of the waste etchant is made simpler, and the adhesion between the diamond film coating and the cemented carbide cutting tool can be strengthened.
Abstract translation: 金刚石涂层硬质合金切削工具的制造方法包括用NaOH或KOH水溶液电解蚀刻硬质合金切削工具的表面，或用KMnO 4 + KOH水溶液化学蚀刻硬质合金刀具的表面，以及 在硬质合金切削工具上沉积金刚石膜。 可以实现比通过使用村上解决方案更强的蚀刻效果，并且蚀刻剂中不包含有毒材料。 此外，使废弃蚀刻剂的处理变得更简单，并且可以加强金刚石膜涂层和硬质合金切削工具之间的粘附。
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公开(公告)号：US08154058B2
公开(公告)日：2012-04-10
申请号：US12589622
申请日：2008-10-23
Applicant: Gyu Weon Hwang , Wook Seong Lee , Jeung-hyun Jeong , Jong-Keuk Park , Young Joon Baik
Inventor： Gyu Weon Hwang , Wook Seong Lee , Jeung-hyun Jeong , Jong-Keuk Park , Young Joon Baik
CPC classification number: G01N27/4145 , H01L2924/0002 , H01L2924/00
Abstract: A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape.
Abstract translation: 生物传感器包括形成在硅半导体衬底上的栅电介质，形成在栅电介质上的导电金刚石膜的栅电极，键合在用于检测生物分子的栅电极上的探针分子，以及形成在半导体衬底上的源/漏区 在栅电极的侧面。 栅电极是梳形或格子形状。
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Patent Agency Ranking
16.发明授权公开(公告)号：US08034411B2
公开(公告)日：2011-10-11
申请号：US11931963
申请日：2007-10-31
Applicant: Heqing Li , Wook Seong Lee , Young Joon Baik , Jong-Keuk Park
Inventor： Heqing Li , Wook Seong Lee , Young Joon Baik , Jong-Keuk Park
CPC classification number: C23C16/277 , B82Y30/00 , C23C16/271 , C23C16/279
Abstract: The present invention relates to a method of preventing abnormal large grains from being included in a NCD thin film during a hot filament CVD process by appropriately controlling the deposition condition regarding a temperature-measuring means, a deposition pressure, an electrical potential and/or the composition of a raw material gas flow.
Abstract translation: 本发明涉及通过适当地控制关于温度测量装置，沉积压力，电位和/或电压的沉积条件，防止在热丝CVD过程中异常大晶粒被包含在NCD薄膜中的方法 原料气流的组成。
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17.发明申请公开(公告)号：US20110223332A1
公开(公告)日：2011-09-15
申请号：US13047405
申请日：2011-03-14
Applicant: Young Joon BAIK , Jong Keuk PARK , Wook Seong LEE
Inventor： Young Joon BAIK , Jong Keuk PARK , Wook Seong LEE
CPC classification number: C23C14/0647 , C23C14/067
Abstract: The present invention relates to a method for depositing a cBN thin film on a substrate to obtain an abrasive material by physical vapor deposition carried out under an atmosphere composed of an inert gas and hydrogen. The abrasive produced by the inventive method comprises the cBN thin film attached firmly to the substrate, which has excellent hardness and durability.
Abstract translation: 本发明涉及一种在基板上沉积cBN薄膜的方法，通过在由惰性气体和氢气组成的气氛下进行物理气相沉积来获得研磨材料。 通过本发明方法制造的磨料包括牢固地附着到基底上的cBN薄膜，其具有优异的硬度和耐久性。
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18.发明授权Graphene-diamond hybrid material and method for preparing same using chemical vapor deposition 有权石墨烯 - 金刚石杂化材料及其使用化学气相沉积的方法公开(公告)号：US07776445B2
公开(公告)日：2010-08-17
申请号：US12191801
申请日：2008-08-14
Applicant: Jae Kap Lee , Seung Cheol Lee , Phillip John , Wook Seong Lee , Jeon Kook Lee
Inventor： Jae Kap Lee , Seung Cheol Lee , Phillip John , Wook Seong Lee , Jeon Kook Lee
CPC classification number: C30B29/02 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C01B32/188 , C23C16/01 , C23C16/26 , C30B25/02 , C30B29/04 , Y10S977/742 , Y10T428/30
Abstract: Disclosed herein are a graphene hybrid material and a method for preparing the graphene hybrid material, the graphene hybrid material comprising: a matrix having lattice planes disconnected on a surface thereof; and layers of graphene which are epitaxially grown along the lattice planes disconnected on the surface of the matrix such that the layers of graphene are oriented perpendicularly to the matrix, and which are spaced apart from each other and layered on the matrix in the same shape. The graphene hybrid material can be usefully used in the fields of next-generation semiconductor devices, biosensors, electrochemical electrodes and the like.
Abstract translation: 本发明公开了石墨烯混合材料和石墨烯混合材料的制备方法，所述石墨烯混合材料包括：具有在其表面上断开晶格面的矩阵; 以及沿着在基体表面上断开的晶格面外延生长的石墨烯层，使得石墨烯层垂直于矩阵定向，并且彼此间隔开并以相同形状层叠在基体上。 石墨烯混合材料可用于下一代半导体器件，生物传感器，电化学电极等领域。
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公开(公告)号：US20100028573A1
公开(公告)日：2010-02-04
申请号：US12512942
申请日：2009-07-30
Applicant: Jae-Kap LEE , So-Hyung Lee , Jae-Pyoung Ahn , Seung-Cheol Lee , Wook-Seong Lee
Inventor： Jae-Kap LEE , So-Hyung Lee , Jae-Pyoung Ahn , Seung-Cheol Lee , Wook-Seong Lee
CPC classification number: C23C16/26 , B82Y30/00 , C01B32/20 , C01P2002/78 , Y10T428/13 , Y10T428/261 , Y10T428/298 , Y10T428/2982
Abstract: Disclosed is AA′ graphite with a new stacking feature of graphene, and a fabrication method thereof. Graphene is stacked in the sequence of AA′ where alternate graphene layers exhibiting the AA′ stacking are translated by a half hexagon (1.23 Å). AA′ graphite has an interplanar spacing of about 3.44 Å larger than that of the conventional AB stacked graphite (3.35 Å) that has been known as the only crystal of pure graphite. This may allow the AA′ stacked graphite to have unique physical and chemical characteristics.
Abstract translation: 公开了具有石墨烯的新堆叠特征的AA'石墨及其制造方法。 石墨烯以AA'的顺序堆叠，其中呈现AA'层叠的交替石墨烯层被半六边形（1.23）平移。 AA'石墨具有比已知为纯石墨的唯一晶体的常规AB堆叠石墨（3.35埃）的面间距大约3.44埃。 这可能使AA的堆积石墨具有独特的物理和化学特性。
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20.发明申请METHOD OF PREVENTING ABNORMAL LARGE GRAINS FROM BEING INCLUDED INTO THIN NANO-CRYSTALLINE DIAMOND FILM 有权防止异种大颗粒从包括在纳米晶体金刚石薄膜中的方法公开(公告)号：US20090074986A1
公开(公告)日：2009-03-19
申请号：US11931963
申请日：2007-10-31
Applicant: Heqing Li , Wook Seong Lee , Young Joon Baik , Jong-Keuk Park
Inventor： Heqing Li , Wook Seong Lee , Young Joon Baik , Jong-Keuk Park
CPC classification number: C23C16/277 , B82Y30/00 , C23C16/271 , C23C16/279
Abstract: The present invention relates to a method of preventing abnormal large grains from being included in a NCD thin film during a hot filament CVD process by appropriately controlling the deposition condition regarding a temperature-measuring means, a deposition pressure, an electrical potential and/or the composition of a raw material gas flow.
Abstract translation: 本发明涉及通过适当地控制关于温度测量装置，沉积压力，电位和/或电压的沉积条件，防止在热丝CVD过程中异常大晶粒被包含在NCD薄膜中的方法 原料气流的组成。
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