Abstract:
This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, zinc oxide, or the like) and at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include a plurality of TCO layers and/or a plurality of conductive substantially metallic IR reflecting layers arranged in an alternating manner in order to provide for reduced visible light reflection, increased conductivity, and/or increased infrared (IR) reflection capability.
Abstract:
Certain embodiments of this invention relates to a coated article including a substrate (e.g., glass substrate) which supports a coating thereon, wherein the coating includes at least one layer of or including SbOxNy. This layer is desirable for blocking (reflection and/or absorption) of at least some ultraviolet (UV) radiation. In certain example embodiments of this invention, the layer of SbOxNy may be used as a dielectric layer in a low-E (low-emissivity) coating, and may improve UV-blocking capability of such a low-E coating. Coated articles in certain example embodiments of this invention may be used in the context of windows.
Abstract translation:本发明的某些实施例涉及一种包括在其上支撑涂层的基底(例如,玻璃基底)的涂层制品,其中该涂层包括至少一层或包括SbO x N SUB>。 该层对于阻挡(反射和/或吸收)至少一些紫外(UV)辐射是理想的。 在本发明的某些示例性实施例中,SbO x N N y层可以用作低E(低发射率)涂层中的电介质层,并且可以 提高这种低E涂层的UV阻隔能力。 在本发明的某些示例性实施例中的涂层制品可以在窗口的上下文中使用。
Abstract:
A first surface mirror includes a reflective layer and one or more dielectric layers. A metal oxide (e.g., aluminum oxide) nucleation layer(s) is provided above and/or below the reflective layer in order to improve durability of the first surface mirror.
Abstract:
A backlit transmissive liquid crystal display including non-linear resistive thin film diodes (TFDs). Select address lines on the active substrate provide both conventional address line functionality, as well as acting as one of the electrodes for each thin film diode. Two such diodes are provided in each pixel in certain embodiments. Still further, black matrix material is provided between the aforesaid address line material and the substrate so as to form rows of stacks on the active substrate. The thin film diode semi-insulating material, the address line material, and the black matrix material are patterned together in a single step to form elongated rows (or columns) on the active substrate. In such a manner, the display has reduced ambient light reflections, and reduce photosensitivity. Furthermore, because the pixel electrode, which also functions as the top TFD electrode in each pixel, overlaps both the select lines and portions of the color filter, a high pixel aperture ratio of at least about 70% is provided. The TFDs may be MIM diodes in certain embodiments.
Abstract:
Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.
Abstract:
A coated article includes a temperable antireflection (AR) coating that utilizes medium and low index (index of refraction “n”) layers having compressive residual stress in the AR coating. In certain example embodiments, the coating may include the following layers from the glass substrate outwardly: silicon oxynitride (SiOxNy) medium index layer/high index layer/low index layer. In certain example embodiments, depending on the chemical and optical properties of the high index layer and the substrate, the medium and low index layers of the AR coating are selected to cause a net compressive residual stress and thus optimize the overall performance of the antireflection coating when the coated article is tempered and/or heat-treated.
Abstract translation:涂覆制品包括使用在AR涂层中具有压缩残余应力的中等和低折射率(折射率“n”)层的可回火抗反射(AR)涂层。 在某些示例性实施例中,涂层可以包括从玻璃基板向外的以下层:氮氧化硅(SiO x N y)介质折射率层/高折射率层/低折射率层。 在某些示例性实施方案中,根据高折射率层和基底的化学和光学性质,选择AR涂层的介质和低折射率层以产生净压缩残余应力,从而优化抗反射涂层的整体性能 当涂层制品回火和/或热处理时。
Abstract:
Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.
Abstract:
Certain example embodiments of this invention relate to a method of activating an indium tin oxide (ITO) thin film deposited, directly or indirectly, on a substrate. The ITO thin film is baked in a low oxygen environment at a temperature of at least 450 degrees C. for at least 10 minutes so as to provide for (1) a post-baked resistivity of the ITO thin film that is below a resistivity of a corresponding air-baked ITO thin film, (2) a post-baked visible spectrum absorption and transmission of the ITO thin film that respectively are below and above the absorption and transmission of the corresponding air-baked ITO thin film, and (3) a post-baked infrared reflectivity of the ITO thin film that is above the reflectivity of the corresponding air-baked ITO thin film. The substrate with the activated ITO thin film may be used in a photovoltaic device, for example.
Abstract:
Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal seed layer is formed over the transparent substrate. The metal seed layer includes titanium, zirconium, hafnium, or a combination thereof. A reflective layer is formed on the metal seed layer. The metal seed layer may be continuous, or alternatively, the metal seed layer may be formed in multiple sections.
Abstract:
A plasma display panel (PDP) includes an EMI filter at a front portion thereof for blocking/shielding substantial amounts of electromagnetic waves. The filters has high visible transmission, and is capable of blocking/shielding electromagnetic waves. In certain example embodiments, a silver based coating of the EMI filter reduces damage from EMI radiation through highly conductive Ag layers, blocks significant amounts of NIR and IR radiation from outdoor sunlight to reduce PDP panel temperature, and enhances contrast ratio through reduced reflection, while maintaining high visible transmission. In certain example embodiments, at least one layer of or including silicon nitride may be Si-rich, and/or at least one layer including an oxide of Ni and/or Cr may be a suboxide, in order to improve heat treatability of the coated article.