Front electrode for use in photovoltaic device and method of making same
    11.
    发明申请
    Front electrode for use in photovoltaic device and method of making same 审中-公开
    用于光伏器件的前电极及其制造方法

    公开(公告)号:US20080105298A1

    公开(公告)日:2008-05-08

    申请号:US11591668

    申请日:2006-11-02

    Abstract: This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, zinc oxide, or the like) and at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include a plurality of TCO layers and/or a plurality of conductive substantially metallic IR reflecting layers arranged in an alternating manner in order to provide for reduced visible light reflection, increased conductivity, and/or increased infrared (IR) reflection capability.

    Abstract translation: 本发明涉及用于诸如光伏器件的电子设备中的前电极/触点。 在某些示例性实施例中,光伏器件等的前电极包括多层涂层,其包括至少一种透明导电氧化物(TCO)层(例如,由氧化锡,氧化锌等材料构成或包括诸如氧化锡,氧化锌等) 和至少一个导电的基本上金属的IR反射层(例如,基于银,金等)。 在某些示例中,多层前电极涂层可以包括多个TCO层和/或以交替方式布置的多个导电的基本上金属的IR反射层,以便提供减少的可见光反射,增加的导电性和/或 增加红外(IR)反射能力。

    High aperture liquid crystal display including thin film diodes, and
method of making same
    14.
    发明授权
    High aperture liquid crystal display including thin film diodes, and method of making same 有权
    包括薄膜二极管的高孔径液晶显示器及其制造方法

    公开(公告)号:US5926236A

    公开(公告)日:1999-07-20

    申请号:US199047

    申请日:1998-11-24

    Abstract: A backlit transmissive liquid crystal display including non-linear resistive thin film diodes (TFDs). Select address lines on the active substrate provide both conventional address line functionality, as well as acting as one of the electrodes for each thin film diode. Two such diodes are provided in each pixel in certain embodiments. Still further, black matrix material is provided between the aforesaid address line material and the substrate so as to form rows of stacks on the active substrate. The thin film diode semi-insulating material, the address line material, and the black matrix material are patterned together in a single step to form elongated rows (or columns) on the active substrate. In such a manner, the display has reduced ambient light reflections, and reduce photosensitivity. Furthermore, because the pixel electrode, which also functions as the top TFD electrode in each pixel, overlaps both the select lines and portions of the color filter, a high pixel aperture ratio of at least about 70% is provided. The TFDs may be MIM diodes in certain embodiments.

    Abstract translation: 背光透射型液晶显示器,包括非线性电阻薄膜二极管(TFD)。 在有源基板上选择地址线提供常规的地址线功能,以及用作每个薄膜二极管的电极之一。 在某些实施例中,在每个像素中提供两个这样的二极管。 此外,黑色矩阵材料设置在上述地址线材料和衬底之间,以在活性衬底上形成堆叠行。 薄膜二极管半绝缘材料,地址线材料和黑矩阵材料在一个步骤中被图案化在一起以在活性基板上形成细长的行(或列)。 以这种方式,显示器减少了环境光反射,降低了光敏性。 此外,由于也用作每个像素中的顶部TFD电极的像素电极与选择线和滤色器的两部分重叠,因此提供至少约70%的高像素孔径比。 在某些实施例中,TFD可以是MIM二极管。

    Temperable three layer antireflective coating, coated article including temperable three layer antireflective coating, and/or method of making the same
    16.
    发明授权
    Temperable three layer antireflective coating, coated article including temperable three layer antireflective coating, and/or method of making the same 有权
    耐温三层抗反射涂层,包括耐温三层抗反射涂层的涂层制品和/或制造该层的方法

    公开(公告)号:US08693097B2

    公开(公告)日:2014-04-08

    申请号:US12923146

    申请日:2010-09-03

    CPC classification number: G02B1/115 C03C17/3435 C03C2217/734

    Abstract: A coated article includes a temperable antireflection (AR) coating that utilizes medium and low index (index of refraction “n”) layers having compressive residual stress in the AR coating. In certain example embodiments, the coating may include the following layers from the glass substrate outwardly: silicon oxynitride (SiOxNy) medium index layer/high index layer/low index layer. In certain example embodiments, depending on the chemical and optical properties of the high index layer and the substrate, the medium and low index layers of the AR coating are selected to cause a net compressive residual stress and thus optimize the overall performance of the antireflection coating when the coated article is tempered and/or heat-treated.

    Abstract translation: 涂覆制品包括使用在AR涂层中具有压缩残余应力的中等和低折射率(折射率“n”)层的可回火抗反射(AR)涂层。 在某些示例性实施例中,涂层可以包括从玻璃基板向外的以下层:氮氧化硅(SiO x N y)介质折射率层/高折射率层/低折射率层。 在某些示例性实施方案中,根据高折射率层和基底的化学和光学性质,选择AR涂层的介质和低折射率层以产生净压缩残余应力,从而优化抗反射涂层的整体性能 当涂层制品回火和/或热处理时。

    Method of enhancing the conductive and optical properties of deposited indium tin oxide (ITO) thin films
    18.
    发明授权
    Method of enhancing the conductive and optical properties of deposited indium tin oxide (ITO) thin films 失效
    提高沉积氧化铟锡(ITO)薄膜导电性能和光学性能的方法

    公开(公告)号:US08445373B2

    公开(公告)日:2013-05-21

    申请号:US12457006

    申请日:2009-05-28

    Abstract: Certain example embodiments of this invention relate to a method of activating an indium tin oxide (ITO) thin film deposited, directly or indirectly, on a substrate. The ITO thin film is baked in a low oxygen environment at a temperature of at least 450 degrees C. for at least 10 minutes so as to provide for (1) a post-baked resistivity of the ITO thin film that is below a resistivity of a corresponding air-baked ITO thin film, (2) a post-baked visible spectrum absorption and transmission of the ITO thin film that respectively are below and above the absorption and transmission of the corresponding air-baked ITO thin film, and (3) a post-baked infrared reflectivity of the ITO thin film that is above the reflectivity of the corresponding air-baked ITO thin film. The substrate with the activated ITO thin film may be used in a photovoltaic device, for example.

    Abstract translation: 本发明的某些示例性实施例涉及一种激活在衬底上直接或间接沉积的氧化铟锡(ITO)薄膜的方法。 ITO薄膜在低氧环境中在至少450℃的温度下烘烤至少10分钟,从而提供(1)ITO薄膜的后烘烤电阻率低于 相应的空气焙烧ITO薄膜,(2)ITO薄膜的后烘烤可见光谱吸收和透射分别在相应的空气焙烧ITO薄膜的吸收和透射之下和之上,和(3) ITO薄膜的后烘焙红外反射率高于相应的空气焙烧ITO薄膜的反射率。 具有活化的ITO薄膜的基板例如可以用在光电器件中。

    EMI filter for plasma display panel
    20.
    发明授权
    EMI filter for plasma display panel 有权
    用于等离子体显示面板的EMI滤波器

    公开(公告)号:US08298678B2

    公开(公告)日:2012-10-30

    申请号:US13064426

    申请日:2011-03-24

    Abstract: A plasma display panel (PDP) includes an EMI filter at a front portion thereof for blocking/shielding substantial amounts of electromagnetic waves. The filters has high visible transmission, and is capable of blocking/shielding electromagnetic waves. In certain example embodiments, a silver based coating of the EMI filter reduces damage from EMI radiation through highly conductive Ag layers, blocks significant amounts of NIR and IR radiation from outdoor sunlight to reduce PDP panel temperature, and enhances contrast ratio through reduced reflection, while maintaining high visible transmission. In certain example embodiments, at least one layer of or including silicon nitride may be Si-rich, and/or at least one layer including an oxide of Ni and/or Cr may be a suboxide, in order to improve heat treatability of the coated article.

    Abstract translation: 等离子体显示面板(PDP)在其前部包括用于阻挡/屏蔽大量电磁波的EMI滤波器。 滤光片具有高可见透光率,能够阻挡/屏蔽电磁波。 在某些示例性实施例中,EMI滤波器的基于银的涂层减少了EMI辐射对高导电性Ag层的损伤,阻挡了来自户外太阳光的大量NIR和IR辐射,以减少PDP面板温度,并通过减少反射增强了对比度,同时 保持高可见传播。 在某些示例性实施方案中,至少一层或包含氮化硅层可以是富Si的,和/或包含Ni和/或Cr的氧化物的至少一层可以是低氧化物,以便改善涂覆的 文章。

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